Characterization of SiO2 layers on Si wafers using atomic force microscopy (English)
- New search for: Zúñiga‐Segundo, A.
- New search for: Ruiz, F.
- New search for: Vázquez‐López, C.
- New search for: González‐Hernández, J.
- New search for: Torres‐Delgado, G.
- New search for: Tsu, D. V.
- New search for: Zúñiga‐Segundo, A.
- New search for: Ruiz, F.
- New search for: Vázquez‐López, C.
- New search for: González‐Hernández, J.
- New search for: Torres‐Delgado, G.
- New search for: Tsu, D. V.
In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
;
12
, 4
;
2572-2576
;
1994
- Article (Journal) / Electronic Resource
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Title:Characterization of SiO2 layers on Si wafers using atomic force microscopy
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Additional title:Characterization of SiO2 layers on Si wafers
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Contributors:Zúñiga‐Segundo, A. ( author ) / Ruiz, F. ( author ) / Vázquez‐López, C. ( author ) / González‐Hernández, J. ( author ) / Torres‐Delgado, G. ( author ) / Tsu, D. V. ( author )
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Published in:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films ; 12, 4 ; 2572-2576
-
Publisher:
- New search for: American Vacuum Society
-
Publication date:1994-07-01
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Size:5 pages
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 12, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 895
-
The American Vacuum Society and the people who have guided its developmentSingleton, Jack H. et al. | 1994
- 897
-
Throughput‐type pumps and ultrahigh vacuumHablanian, M. H. et al. | 1994
- 904
-
History of ultrahigh vacuum pressure measurementsRedhead, P. A. et al. | 1994
- 915
-
Some important developments in capture pumping technology in the last 40 yearsWelch, Kimo M. et al. | 1994
- 921
-
Ultrahigh vacuum in the semiconductor industryO’Hanlon, John F. et al. | 1994
- 928
-
Historical perspective of oriented and epitaxial thin filmsFrancombe, M. H. et al. | 1994
- 936
-
History and current status of vacuum metallurgyBunshah, Rointan F. et al. | 1994
- 946
-
Ultrahigh vacuum and surface sciencePalmberg, Paul W. et al. | 1994
- 953
-
Perspective on stresses in magnetron‐sputtered thin filmsHoffman, D. W. et al. | 1994
- 962
-
Development of ultrahigh vacuum technology for particle accelerators and magnetic fusion devicesDylla, H. F. et al. | 1994
- 979
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Ultrahigh vacuum/chemical vapor deposition epitaxy of silicon and germanium–silicon heterostructuresGreve, D. W. / Misra, R. / Strong, R. / Schlesinger, T. E. et al. | 1994
- 986
-
Silicon shot gas epitaxy: Dose‐controlled digital epitaxyKim, K.‐J. / Suemitsu, M. / Miyamoto, N. et al. | 1994
- 990
-
Heteroepitaxial growth of Si on GaP and GaAs surfaces by remote, plasma enhanced chemical vapor depositionHabermehl, S. / Dietz, N. / Lu, Z. / Bachmann, K. J. / Lucovsky, G. et al. | 1994
- 995
-
III–V on dissimilar substrates: Epitaxy and alternativesDe Boeck, J. / Demeester, P. / Borghs, G. et al. | 1994
- 1003
-
Molecular beam epitaxy grown III–V strain relaxed buffer layers and superlattices characterized by atomic force microscopyHoward, A. J. / Fritz, I. J. / Drummond, T. J. / Olsen, J. A. / Hammons, B. E. / Kurtz, S. R. / Brennan, T. M. et al. | 1994
- 1009
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Fabrication of relaxed Si1-xGex layers on Si substrates by rapidn thermal chemical vapor depositionDutartre, D. et al. | 1994
- 1009
-
Fabrication of relaxed Si1−xGex layers on Si substrates by rapid thermal chemical vapor depositionDutartre, D. / Warren, P. / Provenier, F. / Chollet, F. / Pério, A. et al. | 1994
- 1015
-
Strain compensated heterostructures in the Si1−x−yGexCy ternary systemRegolini, J. L. / Bodnar, S. / Oberlin, J. C. / Ferrieu, F. / Gauneau, M. / Lambert, B. / Boucaud, P. et al. | 1994
- 1020
-
Low‐Knudsen‐number transport and depositionLiao, Hung / Cale, Timothy S. et al. | 1994
- 1027
-
Comparison of boranol and silanol reactivities in boron‐doped SiO2 chemical vapor deposition from trimethyl borate and tetraethyl orthosilicateBartram, M. E. / Moffat, H. K. et al. | 1994
- 1032
-
W nucleation on TiN from WF6 and SiH4Lantz, S. L. / Bell, A. E. / Ford, W. K. / Danielson, D. et al. | 1994
- 1039
-
Large oscillator strength of spatially indirect electron–hole recombination at type II heterojunctions: The InAlAs/InP caseBimberg, D. / Böhrer, J. / Krost, A. et al. | 1994
- 1039
-
Large oscillator strength of spatially indirect electron-hole recombination at type II heterojunctions: The InAIAs-InP caseBimberg, D. et al. | 1994
- 1045
-
Ultraviolet photosulfidation of III–V compound semiconductors for electronic passivationZavadil, Kevin R. / Ashby, Carol I. H. / Howard, Arnold J. / Hammons, B. E. et al. | 1994
- 1050
-
Strain relaxation induced deep levels in In1−xGaxAs thin filmsRaisanen, A. / Brillson, L. J. / Goldman, R. S. / Kavanagh, K. L. / Wieder, H. H. et al. | 1994
- 1054
-
Amorphous Si:B films: Microstructure and electrical propertiesYang, G.‐R. / Soss, S. R. / Nason, T. C. / Ma, X.‐F. / Cocoziello, A. / Tong, B. Y. / Zhu, Y. T. / Du, J. / Tjew, K. F. et al. | 1994
- 1063
-
Electrochemical sulfur passivation of visible (-670 nm) AIGaInP lasersHoward, A.J. et al. | 1994
- 1063
-
Electrochemical sulfur passivation of visible (asymptotically equal to 670 nm) AlGaInP lasersHoward, A. J. / Ashby, C. I. H. / Lott, J. A. / Schneider, R. P. et al. | 1994
- 1063
-
Electrochemical sulfur passivation of visible (∼670 nm) AlGaInP lasersHoward, A. J. / Ashby, C. I. H. / Lott, J. A. / Schneider, R. P. / Corless, R. F. et al. | 1994
- 1068
-
Characterization of diamondlike carbon films grown by super‐wide electron‐cyclotron resonance plasma assisted chemical vapor depositionIshii, A. / Amadatsu, S. / Minomo, S. / Taniguchi, M. / Sugiyo, M. / Kobayashi, T. et al. | 1994
- 1072
-
Transport and phototransport properties of plasma‐deposited hydrogenated amorphous silicon nitrogen alloys, a‐Si,N:HWilliams, M. J. / He, S. S. / Cho, S. M. / Lucovsky, G. et al. | 1994
- 1079
-
Preliminary soft x‐ray studies of β‐SiCShek, M. L. / Miyano, K. E. / Dong, Q.‐Y. / Callcott, T. A. / Ederer, D. L. et al. | 1994
- 1079
-
Preliminary soft x-ray studies of b-SiCShek, M.L. et al. | 1994
- 1085
-
Monte Carlo simulation and measurement of silicon reactive ion etching profilesTait, R. N. / Dew, S. K. / Smy, T. / Brett, M. J. et al. | 1994
- 1090
-
Investigation on the effect of isoelectronic substitution in ZnS1−xSex alloysNelson, Art J. et al. | 1994
- 1094
-
Structural characterization of GaN and GaAsxN1−x grown by electron cyclotron resonance‐metalorganic molecular beam epitaxyBharatan, S. / Jones, K. S. / Abernathy, C. R. / Pearton, S. J. / Ren, F. / Wisk, P. W. / Lothian, J. R. et al. | 1994
- 1094
-
Structural characterization of GaN and GaAsN1-x grown by electron cyclotron resonance-metalorganic molecular beam epitaxyBharatan, S. et al. | 1994
- 1099
-
Posthydrogenation study of a‐Si films grown by reactive magnetron sputteringLiang, Y. H. / Abelson, J. R. et al. | 1994
- 1103
-
Sulfur passivation of AlxGa1−xAs for ohmic contact formationFischer, Verlyn / Ristolainen, E. / Holloway, P. H. / Lampert, W. V. / Haas, T. W. et al. | 1994
- 1103
-
Sulfur passivation of AIxGa1-xAs for ohmic contact formationFischer, Verlyn et al. | 1994
- 1108
-
Kinetic and mechanistic study of the chemical vapor deposition of titanium dioxide thin films using tetrakis-(isopropoxo)-titanium(lV)Fictorie, Carl P. et al. | 1994
- 1108
-
Kinetic and mechanistic study of the chemical vapor deposition of titanium dioxide thin films using tetrakis‐(isopropoxo)‐titanium(IV)Fictorie, Carl. P. / Evans, John F. / Gladfelter, Wayne L. et al. | 1994
- 1114
-
Chemical states of the GaAs/Si interfaceZhou, Huijian / Ho, Wei et al. | 1994
- 1120
-
Be‐doped GaAs layers grown at a high As/Ga ratio by molecular beam epitaxyZhang, D. H. / Radhakrishnan, K. / Yoon, S. F. / Li, H. M. et al. | 1994
- 1124
-
Indium desorption from strained InGaAs/GaAs quantum wells grown by molecular beam epitaxyRadhakrishnan, K. / Yoon, S. F. / Gopalakrishnan, R. / Tan, K. L. et al. | 1994
- 1129
-
Effect of substrate temperature on dry etching of InP, GaAs, and AlGaAs in iodine‐ and bromine‐based plasmasChakrabarti, U. K. / Ren, F. / Pearton, S. J. / Abernathy, C. R. et al. | 1994
- 1134
-
Nanometer p–n junction formation and characterizationLau, W. M. / Huang, L. J. / Chang, W. H. / Bello, I. / Abraham, T. / King, M. et al. | 1994
- 1139
-
Growth and characterization of Si1−xGex/Si multilayers on patterned Si(001) substrates using gas source molecular beam epitaxyZhang, J. / Marinopoulou, A. / Hartung, J. / Lightowlers, E. C. / Anwar, N. / Parry, G. / Xie, M. H. / Mokler, S. M. / Wu, X. D. / Joyce, B. A. et al. | 1994
- 1142
-
Si 1s x‐ray absorption spectra of epitaxial Si–Ge atomic layer superlattice and alloy filmsHitchcock, A. P. / Tyliszczak, T. / Rocco, M. L. M. / Francis, J. T. / Urquhart, S. G. / Feng, X. H. / Lu, Z. H. / Baribeau, J.‐M. / Jackman, T. E. et al. | 1994
- 1148
-
Comparison of two epitaxial formation mechanisms in the SiGe system and the subsequent defect generationProkes, S. M. / Rai, A. K. et al. | 1994
- 1152
-
Optical anisotropy of singular and vicinal Si–SiO2 interfaces and H‐terminated Si surfacesYasuda, T. / Aspnes, D. E. / Lee, D. R. / Bjorkman, C. H. / Lucovsky, G. et al. | 1994
- 1158
-
CaF2 overlayers to preserve the ideal termination of Sb/GaAs(110)Green, A. M. / Spicer, W. E. / Kim, C. / Cao, R. / Pianetta, P. et al. | 1994
- 1170
-
GaAs formation by reduction of As2O3 and Ga2O3 at SiO2/GaAs oxides/GaAs interfacesJimeńez, I. / Moreno, M. / Martín‐Gago, J. A. / Asensio, M. C. / Sacedón, J. L. et al. | 1994
- 1176
-
Real‐time scanning microprobe reflection high‐energy electron diffraction observations of III–V growth during molecular‐beam epitaxyIsu, T. / Morishita, Y. / Goto, S. / Nomura, Y. / Katayama, Y. et al. | 1994
- 1180
-
As capture and the growth of ultrathin InAs layers on InPAspnes, D. E. / Tamargo, M. C. / Brasil, M. J. S. P. / Nahory, R. E. / Schwarz, S. A. et al. | 1994
- 1186
-
Comparison of intrinsic and extrinsic carbon doping sources for GaAs and AlGaAs grown by metalorganic molecular beam epitaxyAbernathy, C. R. / Pearton, S. J. / Ren, F. / Hobson, W. S. / Wisk, P. W. et al. | 1994
- 1191
-
Fundamental research and device applications of molecular beam epitaxy grown heterostructuresWeisbuch, C. et al. | 1994
- 1201
-
Study of the epitaxial growth of GaAs(110) films by molecular beam epitaxyFawcett, P. N. / Neave, J. H. / Zhang, J. / Joyce, B. A. et al. | 1994
- 1204
-
Microloading effect prevention in SiO2 contact‐hole etchingKato, Shin‐ichi / Sato, Masaaki / Arita, Yoshinobu et al. | 1994
- 1209
-
Short‐gas‐residence‐time electron cyclotron resonance plasma etchingTsujimoto, Kazunori / Kumihashi, Takao / Kofuji, Naoyuki / Tachi, Shin’ichi et al. | 1994
- 1216
-
Modeling the electromagnetic excitation of a microwave cavity plasma reactorTan, W. / Grotjohn, T. A. et al. | 1994
- 1221
-
Modeling an inductively coupled plasma sourceParanjpe, A. P. et al. | 1994
- 1229
-
Modeling and simulation of glow discharge plasma reactorsLymberopoulos, Dimitris P. / Economou, Demetre J. et al. | 1994
- 1237
-
Oxygen‐plasma‐enhanced crystallization of a‐Si:H films on glassYin, Aiguo / Fonash, S. J. et al. | 1994
- 1241
-
Super‐wide electron cyclotron resonance plasma source excited by traveling microwave as an efficient tool for diamondlike carbon film depositionIshii, A. / Amadatsu, S. / Minomo, S. / Taniguchi, M. / Sugiyo, M. / Sakaguchi, Y. / Kobayashi, T. et al. | 1994
- 1244
-
Investigation of thick, low‐temperature plasma deposited silica films for waveguide fabricationTabasky, M. / Bulat, E. S. / Tweed, B. / Herrick, C. et al. | 1994
- 1252
-
Examination of hydrogen etched mercury cadmium telluride by spectroscopic ellipsometryOrloff, Glennis J. / Smith, Patricia B. et al. | 1994
- 1259
-
Reactive ion etching of copper with BCl3 and SiCl4: Plasma diagnostics and patterningHoward, B. J. / Steinbrüchel, Ch. et al. | 1994
- 1259
-
Reactive ion etching of copper with BCI3 and SiCI4: Plasma diagnostics and patterningHoward, B.J. et al. | 1994
- 1265
-
Tapered aluminum interconnect etchAllen, Lynn R. / Rickard, Rick et al. | 1994
- 1269
-
Operation of DIII‐D with all‐graphite wallsHoltrop, K. L. / Jackson, G. L. / Kellman, A. G. / Lee, R. L. / Hollerbach, M. A. et al. | 1994
- 1275
-
Production and characterization of doped mandrels for inertial‐confinement fusion experimentsCook, R. / Overturf, G. E. / Buckley, S. R. / McEachern, R. et al. | 1994
- 1281
-
Electron cyclotron resonance plasma source for conductive film depositionOno, Toshiro / Nishimura, Hiroshi / Shimada, Masaru / Matsuo, Seitaro et al. | 1994
- 1287
-
Fluorocarbon high density plasmas. VIII. Study of the ion flux composition at the substrate in electron cyclotron resonance etching processes using fluorocarbon gasesKirmse, Karen H. R. / Wendt, Amy E. / Oehrlein, Gottlieb S. / Zhang, Ying et al. | 1994
- 1293
-
Cryogenic targets and related technologies at ILE Osaka UniversityNorimatsu, T. / Chen, C. M. / Nakajima, K. / Takagi, M. / Izawa, Y. / Yamanaka, T. / Nakai, S. et al. | 1994
- 1302
-
Laser fusion target shell wall thickness from interference fringe shape analysisStephens, R. B. / Wittman, M. D. et al. | 1994
- 1309
-
Electron cyclotron resonance plasma and thermal oxidation mechanisms of germaniumWang, Y. / Hu, Y. Z. / Irene, E. A. et al. | 1994
- 1315
-
In situ electron cyclotron resonance plasma surface cleaning of siliconHu, Y. Z. / Buaud, P. P. / Spanos, L. / Wang, Y. Q. / Li, M. / Irene, E. A. et al. | 1994
- 1322
-
Helicon wave plasma reactor employing single‐loop antennaJiwari, Nobuhiro / Fukasawa, Takayuki / Kawakami, Hiroshi / Shindo, Haruo / Horiike, Yasuhiro et al. | 1994
- 1328
-
Etching of aluminum alloys in the transformer‐coupled plasma etcherRa, Yunju / Bradley, Stephen G. / Chen, Ching‐Hwa et al. | 1994
- 1334
-
Damage to thin gate oxide during lightly doped drain spacer oxide etchingGabriel, Calvin T. / Weling, Milind G. et al. | 1994
- 1339
-
Thin‐oxide degradation along feature edges during reactive ion etching of polysilicon gatesMarkus, K. / Osburn, C. M. / Magill, P. / Bobbio, S. M. et al. | 1994
- 1346
-
Characterization of etch‐induced damage for Si etched in Cl2 plasma generated by an electron cyclotron resonance sourceSung, K. T. / Pang, S. W. et al. | 1994
- 1351
-
Investigation of plasma etch induced damage in compound semiconductor devicesShul, R. J. / Lovejoy, M. L. / Hetherington, D. L. / Rieger, D. J. / Vawter, G. A. / Klem, J. F. / Melloch, M. R. et al. | 1994
- 1356
-
Magnetron enhanced reactive ion etching of GaAs in CH4/H2/Ar: Surface damage studyMcLane, G. F. / Buchwald, W. R. / Casas, L. / Cole, M. W. et al. | 1994
- 1360
-
Critical ion energy and ion flux in the growth of films by plasma‐enhanced chemical‐vapor depositionMartinu, L. / Klemberg‐Sapieha, J. E. / Küttel, O. M. / Raveh, A. / Wertheimer, M. R. et al. | 1994
- 1365
-
Carbon content of silicon oxide films deposited by room temperature plasma enhanced chemical vapor deposition of hexamethyldisiloxane and oxygenTheil, J. A. / Brace, J. G. / Knoll, R. W. et al. | 1994
- 1371
-
Low‐temperature plasma‐assisted oxidation combined with in situ rapid thermal oxide deposition for stacked‐gate Si–SiO2 heterostructures: Integrated processing and device studiesMisra, V. / Hattangady, S. V. / Yasuda, T. / Xu, X‐L / Hornung, B. / Lucovsky, G. / Wortman, J. J. et al. | 1994
- 1380
-
Computer simulation of mass‐selective plasma‐source ion implantationShohet, J. L. / Wickesberg, E. B. / Kushner, Mark J. et al. | 1994
- 1387
-
Two‐dimensional self‐consistent fluid simulation of radio frequency inductive sourcesDiPeso, G. / Vahedi, V. / Hewett, D. W. / Rognlien, T. D. et al. | 1994
- 1397
-
Effects of particle clouds in a plasma etch system on silicon dioxide wafer contaminationCollins, S. M. / O’Hanlon, J. F. / Carlile, R. N. et al. | 1994
- 1397
-
Effects of particle clouds in a plasma etch system on silicon dioxide water contaminationCollins, S. M. / O'Hanlon, J. F. / Carlile, R. N. et al. | 1994
- 1403
-
Plasma impedance and microwave interferometric measurements of electron concentrations in dual‐frequency powered sulfur hexafluoride plasmasJaiprakash, V. C. / Thompson, B. E. et al. | 1994
- 1408
-
Effects of ion‐induced electron emission on magnetron plasma instabilitiesHendricks, M. B. / Smith, P. C. / Ruzic, D. N. / Leybovich, A. / Poole, J. E. et al. | 1994
- 1417
-
Role of ions in reactive ion etchingCoburn, J. W. et al. | 1994
- 1425
-
Importance of the molecular identity of ion species in reactive ion etching at low energiesBello, I. / Chang, W. H. / Lau, W. M. et al. | 1994
- 1431
-
Real‐time observation of ultrathin silicon oxide film growth using rapid ellipsometryKuroki, H. / Nakamura, K. G. / Kamioka, I. / Kawabe, T. / Kitajima, M. et al. | 1994
- 1435
-
Energetic particles in the sputtering of an indium–tin oxide targetTominaga, K. / Chong, M. / Shintani, Y. et al. | 1994
- 1439
-
Optical thin films for waveguide applicationsMir, Jose M. / Agostinelli, John A. et al. | 1994
- 1446
-
Deposition of nonlinear optical films of potassium titanyl phosphate (KTiOPO4) by pulsed excimer laser ablationXiong, Fulin / Hagerman, M. / Zhou, H. / Kozhevnikov, V. / Wong, G. K. / Poeppelmeier, K. / Ketterson, J. B. / Chang, R. P. H. / White, C. W. et al. | 1994
- 1451
-
Inert gases in sputtered tungsten: A test of predictive capabilityHoffman, D. W. / Park, J.‐S. / Morley, T. S. et al. | 1994
- 1457
-
Estimations and results of energetic condensation processes in relation to hard carbon depositionRother, B. et al. | 1994
- 1463
-
In situ measurement of thin‐film conductivity during and after energetic condensationMausbach, Michael / van Kronenberg, Guido / Ehrich, Horst et al. | 1994
- 1470
-
Infrared absorption and nuclear magnetic resonance studies of carbon nitride thin films prepared by reactive magnetron sputteringLi, Dong / Chung, Yip‐Wah / Yang, Shengtian / Wong, Ming‐Show / Adibi, Farshid / Sproul, William D. et al. | 1994
- 1474
-
One‐point numerical modeling of microwave plasma chemical vapor deposition diamond deposition reactorsHyman, E. / Tsang, K. / Drobot, A. / Lane, B. / Casey, J. / Post, R. et al. | 1994
- 1480
-
Properties of chemical vapor infiltration diamond deposited in a diamond powder matrixPanitz, Janda K. G. / Tallant, David R. / Hills, Charles R. / Staley, David J. et al. | 1994
- 1487
-
Interfacial reactions of ion beam deposited a‐C films on ZnSBruce, T. / Huang, L. J. / Bello, I. / Lau, W. M. / Panchhi, P. / Strnad, V. / High, M. et al. | 1994
- 1491
-
Deposition and characterization of nanocrystalline diamond filmsGruen, Dieter M. / Pan, Xianzheng / Krauss, Alan R. / Liu, Shengzhong / Luo, Jianshu / Foster, Christopher M. et al. | 1994
- 1496
-
Auger electron spectroscopy of laser deposited a‐C, a‐C:H, microcrystalline diamondKovarik, Peter / Bourdon, E. B. D. / Prince, R. H. et al. | 1994
- 1501
-
Dependence of material properties of radio‐frequency magnetron‐sputtered, Cu‐doped, ZnTe thin films on deposition conditionsGessert, T. A. / Li, X. / Coutts, T. J. / Mason, A. R. / Matson, R. J. et al. | 1994
- 1507
-
Study of ion‐beam‐sputtered ZnO films as a function of deposition temperatureQu, Y. / Gessert, T. A. / Coutts, T. J. / Noufi, R. et al. | 1994
- 1513
-
Reaction layer formation and fracture at chemically vapor deposited diamond/metal interfacesPerry, Scott S. / Somorjai, Gabor A. et al. | 1994
- 1519
-
Interface studies of the diamond film grown on the cobalt cemented tungsten carbidePan, F.‐M. / Chen, J.‐L. / Chou, T. / Lin, T.‐S. / Chang, L. et al. | 1994
- 1523
-
Sputtering yield of optical materials: Sigmund’s model and experimental resultsScaglione, S. / Caneve, L. / Sarto, F. et al. | 1994
- 1528
-
High temperature behavior of reactively sputtered AIN films on float glass substratesArbab, M. et al. | 1994
- 1528
-
High temperature behavior of reactively sputtered AlN films on float glass substratesArbab, M. / Finley, J. J. et al. | 1994
- 1535
-
Raman spectroscopic study of the formation of t‐MoSi2 from Mo/Si multilayersCai, M. / Allred, D. D. / Reyes‐Mena, A. et al. | 1994
- 1542
-
Preferential sputtering of silicon from metal silicides at elevated temperaturesHedlund, C. / Carlsson, P. / Blom, H.‐O. / Berg, S. / Katardjiev, I. V. et al. | 1994
- 1547
-
Accelerator based secondary‐ion mass spectrometry for impurity analysisAnthony, J. M. / Kirchhoff, J. F. / Marble, D. K. / Renfrow, S. N. / Kim, Y. D. / Matteson, S. / McDaniel, F. D. et al. | 1994
- 1551
-
Direct current sputter deposition of titanium nitride controlled in situ by soft x‐ray emission spectroscopyLegrand, P. B. / Dauchot, J. P. / Hecq, M. / Charbonnier, M. / Romand, M. et al. | 1994
- 1557
-
Studies of thin‐film growth, adsorption, and oxidation by in situ, real‐time, and ex situ ion beam analysisLin, Yuping / Krauss, A. R. / Auciello, O. / Nishino, Y. / Gruen, D. M. / Chang, R. P. H. / Schultz, J. A. et al. | 1994
- 1565
-
In situ x‐ray reflectivity measurements of thin film structural evolutionChason, Eric / Chason, Marc et al. | 1994
- 1569
-
Effect of stoichiometry on the phases present in boron nitride thin filmsHackenberger, L. B. / Pilione, L. J. / Messier, R. / Lamaze, G. P. et al. | 1994
- 1576
-
Deposition of diamondlike carbon using a planar radio frequency induction plasmaPappas, D. L. / Hopwood, J. et al. | 1994
- 1583
-
Pull‐test adhesion measurements of diamondlike carbon films on silicon carbide, silicon nitride, aluminum oxide, and zirconium oxideErck, R. A. / Nichols, F. A. / Dierks, J. F. et al. | 1994
- 1587
-
Biased magnetron sputter deposition of corrosion resistant Al–Zn alloy thin filmsLi, L. / Nowak, W. B. et al. | 1994
- 1595
-
Multilayer, multicomponent, and multiphase physical vapor deposition coatings for enhanced performanceSproul, William D. et al. | 1994
- 1602
-
(Ti1−xAlx)N coatings by plasma‐enhanced chemical vapor depositionLee, Sang‐Hyeob / Ryoo, Ho‐Joon / Lee, Jung‐Joong et al. | 1994
- 1602
-
(Ti1-xAIx)N coatings by plasma-enhanced chemical vapor depositionLee, Sang-Hyeob et al. | 1994
- 1608
-
Microstructural study of sputter‐deposited CdTe thin filmsLi, X. / Gessert, T. A. / Matson, R. J. / Hall, J. F. / Coutts, T. J. et al. | 1994
- 1614
-
Influence of ion mass and ion energy on microstructure of ion assisted deposited zinc selenide thin filmsCaneve, L. / Scaglione, S. / Flori, D. / Martelli, S. et al. | 1994
- 1618
-
Effects of target polycrystalline structure and surface gas coverage on magnetron I–V characteristicsLeybovich, A. / Kuniya, T. / Smith, P. C. / Hendricks, M. B. / Ruzic, D. N. et al. | 1994
- 1623
-
Multiple jets and moving substrates: Jet Vapor Deposition of multicomponent thin filmsHalpern, B. L. / Schmitt, J. J. et al. | 1994
- 1628
-
Advanced electron beam source for ultrahigh vacuum (molecular beam epitaxy) and high vacuum applications of thin film depositionMoore, J. W. / Tsujimoto, N. K. et al. | 1994
- 1631
-
Electron beam evaporator constructed from aluminum alloy and the gettering effect of chromium filmsNakada, S. / Yamaguchi, M. / Yamamoto, M. / Ishimaru, H. et al. | 1994
- 1635
-
Vacuum system design of the International Thermonuclear Experimental Reactor pellet fueling systemLangley, R. A. / Gouge, M. J. / Santeler, D. J. et al. | 1994
- 1639
-
Construction and commissioning of the Synchrotron Radiation Research Center vacuum systemHsiung, G. Y. / Huang, J. R. / Shyy, J. G. / Wang, D. J. / Chen, J. R. / Liu, Y. C. et al. | 1994
- 1644
-
Vacuum characteristics of an oxygen‐free high‐conductivity copper duct at the KEK Photon Factory ringHori, Y. / Kobayashi, M. / Takiyama, Y. et al. | 1994
- 1648
-
Optimization of the configuration of the vacuum pumps in the KEK 2.5‐GeV linacSaito, Y. / Kakihara, K. / Horikoshi, G. et al. | 1994
- 1653
-
Early vacuum systems and process descriptions used to deposit optical coatingsAlexander, C. et al. | 1994
- 1663
-
Cold beam tube photodesorption and related experiments for the Superconducting Super Collider Laboratory 20 TeV proton colliderAnashin, V. V. / Derevyankin, G. / Dudnikov, V. G. / Malyshev, O. B. / Osipov, V. N. / Foerster, C. L. / Jacobsen, F. M. / Ruckman, M. W. / Strongin, M. / Kersevan, R. et al. | 1994
- 1673
-
Photon desorption measurements of copper and copper plated beam tubes for the SSCL 20 TeV proton colliderFoerster, C. L. / Lanni, C. / Maslennikov, I. / Turner, W. et al. | 1994
- 1673
-
Photon desorption measurements of copper plated beam tubes for the SSCL 20 TeV proton colliderFoerster, C. L. / Lanni, C. / Maslennikov, I. / Turner, W. et al. | 1994
- 1678
-
Proposed warm bore beam‐pipe assemblies and associated vacuum systems for the worlds two largest particle detectorsChapman, G. R. / Zhou, J. X. et al. | 1994
- 1686
-
Detection of small pressure pulses in an ion pumped ultrahigh vacuum systemRupschus, G. / Niepraschk, R. / Jousten, K. / Kühne, M. et al. | 1994
- 1690
-
Comparison between several new molecular drag pumps and turbomolecular pumpsChu, Ji‐guo et al. | 1994
- 1695
-
Turbomolecular pump with an ultimate pressure of 10−12 TorrIshimaru, Hajime / Hisamatsu, Hiromi et al. | 1994
- 1699
-
Permeation of argon, carbon dioxide, helium, nitrogen, and oxygen through Mylar windowsMapes, M. / Hseuh, H. C. / Jiang, W. S. et al. | 1994
- 1705
-
Sealing technique for aluminum to stainless steel CF flange pairsIshigaki, T. / Shibuya, K. / Sakaue, H. / Be, S. H. et al. | 1994
- 1709
-
Evaluation of different cleaning techniques for oxygen‐free high‐conductivity copperRao, Vijendran P. / Friedlander, Michael P. et al. | 1994
- 1714
-
Comparison of photodesorption yields using synchrotron radiation of low critical energies for stainless steel, copper, and electrodeposited copper surfacesGómez‐Goñi, J. / Gröbner, O. / Mathewson, A. G. et al. | 1994
- 1719
-
Vacuum outgassing of artificial dielectric ceramicsNguyen‐Tuong, Viet et al. | 1994
- 1722
-
Performance of the cold cathode gauges in a high and misaligned magnetic fieldHseuh, H. C. / Jiang, W. S. / Mapes, M. et al. | 1994
- 1727
-
Development of a primary standard ultrahigh vacuum calibration stationLevine, P. D. / Sweda, J. R. et al. | 1994
- 1734
-
Pressure measurement by laser ionization: Direct counting of generated ions by imaging of their spatial distributionIchimura, S. / Sekine, S. / Kokubun, K. / Shimizu, H. et al. | 1994
- 1740
-
Expanded‐range, sealed parts leak testing technology for helium mass spectrometer leak detectionMahoney, D. G. et al. | 1994
- 1744
-
Gas‐flow experiments in the transition regionSanteler, Donald J. et al. | 1994
- 1750
-
Outgassing behavior on aluminum surfaces: Water in vacuum systemsChen, J. R. / Huang, J. R. / Hsiung, G. Y. / Wu, T. Y. / Liu, Y. C. et al. | 1994
- 1755
-
X‐ray photoelectron spectroscopy analysis of aluminum and copper cleaning procedures for the Advanced Photon SourceRosenberg, R. A. / McDowell, M. W. / Noonan, J. R. et al. | 1994
- 1760
-
Characteristics of extremely fast pump‐down process in an aluminum ultrahigh vacuum systemMiki, M. / Itoh, K. / Enomoto, N. / Ishimaru, H. et al. | 1994
- 1767
-
Study of cleaning agents for stainless steel for ultrahigh vacuum useHerbert, J. D. / Groome, A. E. / Reid, R. J. et al. | 1994
- 1772
-
Model for water outgassing from metal surfaces. IILi, Minxu / Dylla, H. F. et al. | 1994
- 1778
-
Analysis of offgassed water: Calibration and techniquesBasford, James A. et al. | 1994
- 1782
-
CUMULATIVE AUTHOR INDEX| 1994
- 1787
-
Surface alloying in metal‐on‐metal epitaxial growthEngdahl, C. / Stoltze, P. / Jacobsen, K. W. / No/rskov, J. K. / Skriver, H. L. / Aldén, M. et al. | 1994
- 1790
-
Two‐dimensional alloying of Au and Ag overlayer on Ru(001): Photoemission and thermal desorption spectroscopy studiesBzowski, A. / Kuhn, M. / Sham, T. K. / Tan, K. H. et al. | 1994
- 1795
-
Investigation of thin Ag/Cu‐alloy films on Ru(0001)Schick, M. / Ceballos, G. / Pelzer, Th. / Schäfer, J. / Rangelov, G. / Stober, J. / Wandelt, K. et al. | 1994
- 1800
-
Nucleation and growth in metal‐on‐metal homoepitaxy: Rate equations, simulations and experimentsEvans, J. W. / Bartelt, M. C. et al. | 1994
- 1809
-
Kinetics of growth of Cu on Cu(001)Ernst, H.‐J. / Fabre, F. / Folkerts, R. / Lapujoulade, J. et al. | 1994
- 1818
-
Work‐function oscillations during Cu film growth on an oxygen precovered Ru(0001) surface: A basically old technique as a powerful film growth monitorSchmidt, M. / Wolter, H. / Nohlen, M. / Wandelt, K. et al. | 1994
- 1825
-
Model for the growth and reactivity of metal films on oxide surfaces: Cu on ZnO(0001̄)–OCampbell, C. T. / Ludviksson, A. et al. | 1994
- 1832
-
Study of epitaxial growth of Ag on hydrogen terminated Si(111) and Si(100) surfacesNaik, R. / Kota, C. / Rao, B. U. M. / Auner, G. W. et al. | 1994
- 1838
-
Growth and energetics of Ga and Al chains on Si(112)Jung, Timothy M. / Prokes, S. M. / Kaplan, R. et al. | 1994
- 1843
-
Structural study of monolayers of Sb on Ge(111) with different surface reconstructions*Kendelewicz, T. / Woicik, J. C. / Miyano, K. E. / Yoshikawa, S. A. / Pianetta, P. / Spicer, W. E. et al. | 1994
- 1848
-
Control of the Fermi‐level position on the GaAs(001) surface: Se passivationPashley, M. D. / Li, D. et al. | 1994
- 1855
-
Interchain vacancy migration on GaAs(110)Lengel, G. / Weimer, M. / Gryko, J. / Allen, R. E. et al. | 1994
- 1858
-
Role of Ga2O in the removal of GaAs surface oxides induced by atomic hydrogenIde, Yuichi / Yamada, Masamichi et al. | 1994
- 1864
-
Characterization of silicon surface microroughness and tunneling transport through ultrathin gate oxideHirose, M. / Hiroshima, M. / Yasaka, T. / Miyazaki, S. et al. | 1994
- 1869
-
Photoemission study of Au, Ge, and O2 deposition on NH4F etched Si(111)Terry, J. / Cao, R. / Wigren, C. / Pianetta, P. et al. | 1994
- 1876
-
Surface cleaning with the carbon dioxide snow jetSherman, Robert / Hirt, Drew / Vane, Ronald et al. | 1994
- 1882
-
Electrochemical study of ultrathin silica films supported on a platinum substrateXu, Xueping et al. | 1994