Vapor deposition polymerization of 4-fluorostyrene and pentafluorostyrene (English)
- New search for: Bartlett, B.
- New search for: Buckley, L. J.
- New search for: Godbey, D. J.
- New search for: Schroeder, M. J.
- New search for: Fontenot, C.
- New search for: Eisinger, S.
- New search for: Bartlett, B.
- New search for: Buckley, L. J.
- New search for: Godbey, D. J.
- New search for: Schroeder, M. J.
- New search for: Fontenot, C.
- New search for: Eisinger, S.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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17
, 1
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90-94
;
1999
- Article (Journal) / Electronic Resource
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Title:Vapor deposition polymerization of 4-fluorostyrene and pentafluorostyrene
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Contributors:Bartlett, B. ( author ) / Buckley, L. J. ( author ) / Godbey, D. J. ( author ) / Schroeder, M. J. ( author ) / Fontenot, C. ( author ) / Eisinger, S. ( author )
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:1999-01-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 17, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Scanning tunneling microscopy studies of formation of reconstructed structure of Ga on the Si(001) surfaceNakada, Yoshinobu / Aksenov, Igor / Okumura, Hajime et al. | 1999
- 7
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Scanning tunneling microscopy study of the adsorption of toluene on Si(001)Borovsky, Brian / Krueger, Michael / Ganz, Eric et al. | 1999
- 12
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Evidence for liquid indium nanoparticles on Ge(001) at room temperatureBottomley, D. J. / Iwami, M. / Uehara, Y. / Ushioda, S. et al. | 1999
- 22
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Optical system for tunneling-electron luminescence spectro/microscopes with conductive-transparent tips in ultrahigh vacuumsMurashita, Tooru et al. | 1999
- 29
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Scanning tunneling microscope-induced luminescence of GaN at threading dislocationsEvoy, S. / Craighead, H. G. / Keller, S. / Mishra, U. K. / DenBaars, S. P. et al. | 1999
- 33
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Area evaluation of microscopically rough surfacesLai, L. / Irene, E. A. et al. | 1999
- 40
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Application of advanced micromachining techniques for the characterization and debug of high performance microprocessorsLivengood, Richard H. / Winer, Paul / Rao, Valluri R. et al. | 1999
- 44
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Nitrogen influence on dangling-bond configuration in silicon-rich thin filmsPivac, B. / Rakvin, B. / Borghesi, A. / Sassella, A. / Bacchetta, M. / Zanotti, L. et al. | 1999
- 49
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Interface charge and nonradiative carrier recombination in interface structuresPasslack, M. / Yu, Z. / Droopad, R. / Bowers, B. / Overgaard, C. / Abrokwah, J. / Kummel, A. C. et al. | 1999
- 53
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A study of the relationship between between interface charges and roughnessLai, L. / Hebert, K. J. / Irene, E. A. et al. | 1999
- 60
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Deep levels in low temperature GaAs probed by field effect deep level transient spectroscopyHalder, N. C. / Goodman, T. et al. | 1999
- 68
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Numerical modeling of electron transport in a cylindrical cellFedirko, V. A. / Belova, N. G. et al. | 1999
- 73
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Effect of light exposure on 1/f noise in a-Si:HJohanson, Robert E. / Scansen, D. / Kasap, S. O. et al. | 1999
- 77
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Fabrication technology of ultrafine masks and Si nanowires using oxidation of vertical sidewalls of a poly-Si layerTsutsumi, Toshiyuki / Tomizawa, Kazutaka / Ishii, Kenichi / Kanemaru, Seigo / Maeda, Tatsuro / Suzuki, Eiichi et al. | 1999
- 82
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Tandem accel lens advantageous in producing a small spot focused ion beamNomura, Setsuo et al. | 1999
- 86
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Nanolithography using a 100 kV electron beam lithography system with a Schottky emitterKamp, M. / Emmerling, M. / Kuhn, S. / Forchel, A. et al. | 1999
- 90
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Vapor deposition polymerization of 4-fluorostyrene and pentafluorostyreneBartlett, B. / Buckley, L. J. / Godbey, D. J. / Schroeder, M. J. / Fontenot, C. / Eisinger, S. et al. | 1999
- 95
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Observations on the formation and ashing of giant folds in high dose ion-implanted resistsVinogradov, Georgy K. / Menagarishvili, Vladimir M. et al. | 1999
- 101
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Environmental stability of 193 nm single layer chemically amplified resistsTimko, A. G. / Houlihan, F. M. / Cirelli, R. A. / Nalamasu, O. / Yoshino, Hiroshi / Itani, Toshiro / Tanabe, Hiroyoshi / Kasama, Kunihiko et al. | 1999
- 109
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High-resolution resist etching for quartermicron lithography using supermagnetron plasmaKinoshita, Haruhisa / Yamauchi, Atsushi / Sawai, Mikio et al. | 1999
- 113
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Use of polymethylmethacrylate as an initial pattern transfer layer in fluorine- and chlorine-based reactive-ion etchingSmith, Christopher J. M. / Murad, Saad K. / Krauss, Thomas F. / De La Rue, Richard M. / Wilkinson, Christopher D. W. et al. | 1999
- 118
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Parametric study of the etching of in plasmas: Modeling of the etching kinetics and validationLagarde, T. / Pelletier, J. / Arnal, Y. et al. | 1999
- 127
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Kinetics of etch products and reaction process in electron cyclotron resonance plasma etching of SiNishikawa, Kazuyasu / Oomori, Tatsuo / Ono, Kouichi et al. | 1999
- 138
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Smooth and anisotropic reactive ion etching of GaAs slot via holes for monolithic microwave integrated circuits using plasmasNordheden, K. J. / Hua, X. D. / Lee, Y. S. / Yang, L. W. / Streit, D. C. / Yen, H. C. et al. | 1999
- 145
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Optimal design using neural network and information analysis in plasma etchingChen, Junghui / Po-Tao Chu, Paul / Shan Hill Wong, David / Jang, Shi-Shang et al. | 1999
- 154
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Dry etching of copper film with hexafluoroacetylacetone via oxidation processKang, Sang-Woo / Kim, Hyo-Uk / Rhee, Shi-Woo et al. | 1999
- 158
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Contact hole model for etch depth dependenceAbraham-Shrauner, Barbara et al. | 1999
- 162
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Ex situ formation of oxide-interlayer-mediated-epitaxial film using Ti cappingKim, Gi Bum / Kwak, Joon Seop / Baik, Hong Koo / Lee, Sung-Man et al. | 1999
- 166
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Thermal stability of a Ti-Si-N diffusion barrier in contact with a Ti adhesion layer for Au metallizationShalish, I. / Shapira, Yoram et al. | 1999
- 174
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Role of cerium dioxide in a tantalum diffusion barrier film for a structureYoon, Dong-Soo / Baik, Hong Koo / Lee, Sung-Man et al. | 1999
- 182
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Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metallizationChen, Xiaomeng / Frisch, Harry L. / Kaloyeros, Alain E. / Arkles, Barry / Sullivan, John et al. | 1999
- 186
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Integrating system and feature scale models to study copper reflowFriedrich, L. J. / Dew, S. K. / Brett, M. J. / Smy, T. et al. | 1999
- 194
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Optimized cleaning and conditioning of a five station tetrakis diethylamido titanium chemical vapor deposition TiN chamberWhelan, C. S. / Bulger, J. M. / Dumont, A. / Clark, J. / Kuhn, M. et al. | 1999
- 201
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Dielectric characteristics of a metal–insulator–metal capacitor using plasma-enhanced chemical vapor deposited silicon nitride filmsMaeda, Masahiko / Yamamoto, Ei-ichi / Ohfuji, Shin-ichi / Itsumi, Manabu et al. | 1999
- 205
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Surface modified spin-on xerogel films as interlayer dielectricsNitta, S. V. / Pisupatti, V. / Jain, A. / Wayner, P. C. / Gill, W. N. / Plawsky, J. L. et al. | 1999
- 213
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Low temperature in situ boron doped Si epitaxial growth by ultrahigh vacuum electron cyclotron resonance chemical vapor depositionPark, Jin-Won / Hwang, Ki-Hyun / Yoon, Euijoon et al. | 1999
- 217
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Patterned regrowth of -GaAs by molecular beam epitaxy using arsenic passivationHeinlein, Christian / Fimland, Bjørn-Ove / Grepstad, Jostein K. / Berge, Torunn et al. | 1999
- 224
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Time-of-flight secondary ion mass spectrometry depth profiling of multiple quantum well II–VI semiconductors using negative cluster ionsZhao, Jin / Na, Myunghee / McKeown, Patrick J. / Chang, Huicheng / Lee, Eunhwa / Luo, Hong / Chen, Jiaxing / Wood, Troy D. / Gardella, Joseph A. et al. | 1999
- 230
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Multilayer technique for fabricating Nb junction circuits exhibiting charging effectsPavolotsky, A. B. / Weimann, Th. / Scherer, H. / Krupenin, V. A. / Niemeyer, J. / Zorin, A. B. et al. | 1999
- 233
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Surface chemical changes on field emitter arrays due to device agingWei, Yi / Chalamala, Babu R. / Smith, Bruce G. / Penn, Cecil W. et al. | 1999
- 237
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Field emission properties of BN coated Si tips by pulsed ArF laser depositionJayatissa, A. H. / Sato, F. / Saito, N. / Sawada, K. / Masuda, T. / Nakanishi, Y. et al. | 1999
- 241
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Preparation of N-doped hydrogen-free diamondlike carbon and its application to field emittersMoon, Jong Hyun / Chung, Suk Jae / Han, Eun Jung / Jang, Jin / Jung, Jae Hoon / Ju, Byeong Kwon / Oh, Myung Hwan et al. | 1999
- 246
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Enhancement of emission characteristics for field emitters by N-doped hydrogen-free diamond-like-carbon coatingKang, Ho Kwan / Kim, To Hoon / Moon, Sung / Jung, Jae Hoon / Oh, Myung Hwan et al. | 1999
- 250
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Simulation of diamond-film field emission microtetrodesZeng, Baoqing / Yang, Zhonghai et al. | 1999
- 253
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Robust optical delivery system for measuring substrate temperature during molecular beam epitaxyThibado, P. M. / Salamo, G. J. / Baharav, Y. et al. | 1999