Amorphous‐silicon charge‐coupled devices (English)
National licence
- New search for: Kishida, Satoru
- New search for: Nara, Yasuo
- New search for: Kobayashi, Osamu
- New search for: Matsumura, Masakiyo
- New search for: Kishida, Satoru
- New search for: Nara, Yasuo
- New search for: Kobayashi, Osamu
- New search for: Matsumura, Masakiyo
In:
Applied Physics Letters
;
41
, 12
;
1154-1156
;
1982
- Article (Journal) / Electronic Resource
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Title:Amorphous‐silicon charge‐coupled devices
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Contributors:Kishida, Satoru ( author ) / Nara, Yasuo ( author ) / Kobayashi, Osamu ( author ) / Matsumura, Masakiyo ( author )
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Published in:Applied Physics Letters ; 41, 12 ; 1154-1156
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Publisher:
- New search for: American Institute of Physics
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Publication date:1982-12-15
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 41, Issue 12
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1111
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Phase‐matched light amplification by three‐wave mixing process in a birefringent fiber due to externally applied stressOhashi, Masaharu / Kitayama, Ken‐ichi / Ishida, Yukinori / Uchida, Naoya et al. | 1982
- 1113
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Catastrophic degradation level of visible and infrared GaAlAs lasersWakao, Kiyohide / Takagi, Nobuyuki / Shima, Katsuhito / Hanamitsu, Kiyoshi / Hori, Ken‐ichi / Takusagawa, Masahito et al. | 1982
- 1115
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Low threshold InGaAsP terrace mass transport laser on semi‐insulating substrateChen, T. R. / Chiu, L. C. / Yu, K. L. / Koren, U. / Hasson, A. / Margalit, S. / Yariv, A. et al. | 1982
- 1118
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Spatial mode discrimination and control in high‐power single‐mode constricted double‐heterojunction large‐optical‐cavity diode lasersButler, J. K. / Botez, D. et al. | 1982
- 1121
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Focusing of a 7700‐A˚ high power phased array semiconductor laserScifres, D. R. / Sprague, R. A. / Streifer, W. / Burnham, R. D. et al. | 1982
- 1124
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Precision measurement of Rayleigh wave velocity perturbationLiang, K. / Bennett, S. D. / Khuri‐Yakub, B. T. / Kino, G. S. et al. | 1982
- 1127
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Thermal oxidation of tantalum silicide in O2 and H2OSaraswat, Krishna C. / Nowicki, Ronald S. / Moulder, John F. et al. | 1982
- 1130
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Structural phase transitions of indium/indium oxide thin‐film compositesHebard, A. F. / Nakahara, S. et al. | 1982
- 1133
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Thermal annealing of microcracks produced by backside laser irradiation of siliconEggermont, G. E. J. / Gee, S. A. / van Kessel, C. G. M. / Falster, R. J. / Gibbons, J. F. et al. | 1982
- 1136
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Charge carrier generation, transport, and trapping in a photoconductive conjugated polymer: PolyphenylacetyleneKang, E. T. / Ehrlich, P. / Bhatt, A. P. / Anderson, W. A. et al. | 1982
- 1138
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CO2 laser‐induced melting of indium antimonideHasselbeck, M. / Kwok, H. S. et al. | 1982
- 1140
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Index of refraction dispersion of n‐ and p‐type InP between 0.95 and 2.0 eVStone, J. / Whalen, M. S. et al. | 1982
- 1143
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Thermal annealing behavior of an oxide layer under siliconHamdi, A. H. / McDaniel, F. D. / Pinizzotto, R. F. / Matteson, S. / Lam, H. W. / Malhi, S. D. S. et al. | 1982
- 1146
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Electronic and optical properties of amorphous Si:H films deposited by chemical vapor depositionAkhtar, M. / Dalal, V. L. / Ramaprasad, K. R. / Gau, S. / Cambridge, J. A. et al. | 1982
- 1148
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Motion of deep gold‐related centers in reverse‐biased silicon junction diodes at room temperaturePearton, S. J. / Tavendale, A. J. et al. | 1982
- 1151
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Transmission electron microscopy of GaAs grown over submicrometer‐period tungsten gratingsVojak, B. A. / Salerno, J. P. et al. | 1982
- 1154
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Amorphous‐silicon charge‐coupled devicesKishida, Satoru / Nara, Yasuo / Kobayashi, Osamu / Matsumura, Masakiyo et al. | 1982