cw femtosecond pulses tunable in the near‐ and midinfrared (English)
National licence
- New search for: Wachman, E. S.
- New search for: Pelouch, W. S.
- New search for: Tang, C. L.
- New search for: Wachman, E. S.
- New search for: Pelouch, W. S.
- New search for: Tang, C. L.
In:
Journal of Applied Physics
;
70
, 3
;
1893-1895
;
1991
- Article (Journal) / Electronic Resource
-
Title:cw femtosecond pulses tunable in the near‐ and midinfrared
-
Contributors:
-
Published in:Journal of Applied Physics ; 70, 3 ; 1893-1895
-
Publisher:
- New search for: American Institute of Physics
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Publication date:1991-08-01
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ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Electronic Resource
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Language:English
-
Source:
Table of contents – Volume 70, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1101
-
Autoresonance microwave acceleratorShpitalnik, R. / Cohen, C. / Dothan, F. / Friedland, L. et al. | 1991
- 1107
-
Eddy‐current probe impedance due to a volumetric flawBowler, J. R. / Jenkins, S. A. / Sabbagh, L. D. / Sabbagh, H. A. et al. | 1991
- 1115
-
Random errors in iron‐dominated microundulatorsGallardo, Juan C. et al. | 1991
- 1121
-
Efficient solutions for scattering from strips and slots in the presence of a dielectric half‐space: Extension to wide scatterers. I. TheoryTsalamengas, John L. / Fikioris, John G. et al. | 1991
- 1132
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Efficient solutions for scattering from strips and slots in the presence of a dielectric half‐space: Extension to wide scatterers. II. ApplicationsTsalamengas, John L. / Fikioris, John G. et al. | 1991
- 1144
-
Measurement and calculation of spontaneous recombination current and optical gain in GaAs‐AlGaAs quantum‐well structuresBlood, P. / Kucharska, A. I. / Jacobs, J. P. / Griffiths, K. et al. | 1991
- 1157
-
Theory of guided‐wave frequency tripling in the form of coherent Cˇerenkov radiation: Application to ultraviolet light generationHayata, K. / Matsumura, H. / Koshiba, M. et al. | 1991
- 1168
-
Discharge impedance of an ultraviolet preionized XeCl laserLeo, M. / Leo, R. A. / Nassisi, V. / Marsigliante, L. / Pecoraro, A. et al. | 1991
- 1172
-
Effect of superfluorescent emission on the operation of an optically pumped CF4 laserSinha, Sucharita et al. | 1991
- 1180
-
Pockels’ effect in polycrystalline ZnS planar waveguidesWong, B. / Jessop, P. E. / Kitai, A. H. et al. | 1991
- 1185
-
Extra ‘‘strange’’ modes in ion implanted lithium niobate waveguidesZhang, L. / Chandler, P. J. / Townsend, P. D. et al. | 1991
- 1190
-
Formulation and solution of hyperbolic Stefan problemGlass, David E. / Necati Ozisik, M. / McRae, S. Scott / Kim, W. S. et al. | 1991
- 1198
-
Thermal conductivity of cast iron: Models and analysis of experimentsHelsing, Johan / Grimvall, Go¨ran et al. | 1991
- 1207
-
Response times of electrorheological fluidsHill, John C. / Van Steenkiste, Thomas H. et al. | 1991
- 1212
-
Measurement of the H− thermal energy in a volume ion source plasmaBacal, M. / Berlemont, P. / Bruneteau, A. M. / Leroy, R. / Stern, R. A. et al. | 1991
- 1220
-
Optical detection of corona discharges in SF6, CF4, and SO2 under dc and 50‐Hz ac voltagesCasanovas, A. M. / Casanovas, J. / Dubroca, V. / Lagarde, F. / Belarbi, A. et al. | 1991
- 1227
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Rail electrodynamics in a plasma armature railgunRolader, Glenn E. / Jamison, Keith A. / Villecco, Roger A. / Graham, Floyd R. et al. | 1991
- 1235
-
Experimental study of correspondence between the electron distribution function in plasma and the second derivative of the Langmuir probe I‐V characteristicShun’ko, E. V. et al. | 1991
- 1240
-
Translationally hot neutrals in etching dischargesSommerer, Timothy J. / Kushner, Mark J. et al. | 1991
- 1252
-
The heat‐of‐mixing effect on ion‐induced grain growthAlexander, Dale E. / Was, Gary S. / Rehn, L. E. et al. | 1991
- 1261
-
Comparison of defects produced by 14‐MeV neutrons and 1‐MeV electrons in n‐type siliconChaudhari, Pratima / Bhoraskar, S. V. / Padgavkar, Swarupa / Bhoraskar, V. N. et al. | 1991
- 1265
-
Gel layers for inducing adjustable pretilt angles in liquid crystal systemsHikmet, R. A. M. / de Witz, C. et al. | 1991
- 1270
-
Layer thickness variations and x‐ray diffraction patterns: A general treatmentHollanders, Mark A. / Thijsse, Barend J. et al. | 1991
- 1276
-
In situ neutron diffraction study of lattice deformation during oxygen precipitation in siliconLiss, K. D. / Magerl, A. / Schneider, J. R. / Zulehner, W. et al. | 1991
- 1281
-
Pulsed laser‐induced amorphization of silicon filmsSameshima, T. / Usui, S. et al. | 1991
- 1290
-
Characterization of metalorganic chemical vapor depostion grown GaAs on Si by means of x-ray scattering radiographySuzuki, Y. / Chikaura, Y. et al. | 1991
- 1290
-
Characterization of metalorganic chemical vapor deposition grown GaAs on Si by means of x‐ray scattering radiographySuzuki, Yoshifumi / Chikaura, Yoshinori et al. | 1991
- 1295
-
Chemical etching‐induced defects in phosphorus‐doped siliconYoneta, Minoru / Kamiura, Yoichi / Hashimoto, Fumio et al. | 1991
- 1309
-
Effects of gamma‐ray irradiation on cubic silicon carbide metal‐oxide‐semiconductor structureYoshikawa, M. / Itoh, H. / Morita, Y. / Nashiyama, I. / Misawa, S. / Okumura, H. / Yoshida, S. et al. | 1991
- 1313
-
Probing laser induced metal vaporization by gas dynamics and liquid pool transport phenomenaDebRoy, T. / Basu, S. / Mundra, K. et al. | 1991
- 1320
-
Global investigation of III‐V semiconductor phase diagram by nonempirical methodMohri, T. / Nakamura, K. / Ito, T. et al. | 1991
- 1331
-
Ferroelectric‐paraelectric phase transitions in Pb5M3F19 with M=Al, Ti, V, Cr, Fe, GaRavez, J. / Andriamampianina, V. / Simon, A. / Grannec, J. / Abrahams, S. C. et al. | 1991
- 1337
-
Thermal and mechanical induced stresses in superconducting YBa2Cu3Ox coatings on fibersHsueh, C. H. / Becher, P. F. / Lackey, W. J. et al. | 1991
- 1345
-
Diffusion, solubility, and thermodynamic properties of gold in solid germanium studied by means of radiotracer and spreading‐resistance analysisAlmazouzi, A. / Bernardini, J. / Moya, E. G. / Bracht, H. / Stolwijk, N. A. / Mehrer, H. et al. | 1991
- 1355
-
A non‐Fickian diffusion equationDas, Amal K. et al. | 1991
- 1359
-
A computer simulation of stripe deterioration through electromigrationHuntington, H. B. / Kalukin, A. / Meng, P. P. / Shy, Y. T. / Ahmad, S. et al. | 1991
- 1369
-
Tantalum‐based diffusion barriers in Si/Cu VLSI metallizationsKolawa, E. / Chen, J. S. / Reid, J. S. / Pokela, P. J. / Nicolet, M.‐A. et al. | 1991
- 1374
-
Interdiffusion, hardness and resistivity of Cr/Cu/Co/Au thin filmsMadakson, Peter et al. | 1991
- 1380
-
Correlation between resistivity and diffusion in thin filmsMadakson, Peter et al. | 1991
- 1385
-
Filament‐assisted diamond growth kineticsHarris, Stephen J. / Weiner, Anita M. / Perry, Thomas A. et al. | 1991
- 1392
-
Study of silver diffusion into Si(111) and SiO2 at moderate temperaturesNason, T. C. / Yang, G.‐R. / Park, K.‐H. / Lu, T.‐M. et al. | 1991
- 1397
-
Analysis of ion‐implanted amorphous and polycrystalline silicon films as diffusion sources for ultrashallow junctionsPark, Keunhyung / Batra, Shubneesh / Banerjee, Sanjay / Lux, Gayle / Smith, T. C. et al. | 1991
- 1397
-
Analysis of ion-implanted amorphous and polycrystalline silicon films as diffusion sources for ultrashallow junctionLux, G. / Smith, T.C. et al. | 1991
- 1405
-
Microvoid nucleation at the interface between a thin film and a substrate in fatigueQin, S. / Fan, H. / Mura, T. et al. | 1991
- 1412
-
Characterization of epitaxially grown films of vanadium oxidesRogers, K. D. / Coath, J. A. / Lovell, M. C. et al. | 1991
- 1416
-
The thermal stability of SiGe films deposited by ultrahigh‐vacuum chemical vapor depositionStiffler, S. R. / Comfort, J. H. / Stanis, C. L. / Harame, D. L. / de Fre´sart, E. / Meyerson, B. S. et al. | 1991
- 1421
-
Influence of growth temperature upon the In solid composition in InxGa1−xSb epilayers grown by metalorganic chemical vapor depositionSu, Y. K. / Juang, F. S. / Wu, T. S. et al. | 1991
- 1425
-
Flow‐orientation effect in batch‐produced Langmuir–Blodgett films: Observation of the unsteady flow around the stagnation pointTabe, Yuka / Ikegami, Keiichi / Kuroda, Shin‐ichi / Saito, Kazuhiro / Saito, Mitsuyoshi / Sugi, Michio et al. | 1991
- 1433
-
Mixing of GaAs/(Ga,Al)As interfaces by Ga+ implantationVieu, C. / Schneider, M. / Planel, R. / Launois, H. / Descouts, B. / Gao, Y. et al. | 1991
- 1444
-
Optical characterization of selectively intermixed GaAs/GaAlAs quantum wires by Ga+ masked implantationVieu, C. / Schneider, M. / Mailly, D. / Planel, R. / Launois, H. / Marzin, J. Y. / Descouts, B. et al. | 1991
- 1451
-
Optical energy‐gap variation and deformation potentials in CuInTe2Quintero, M. / Gonzalez, J. / Woolley, J. C. et al. | 1991
- 1455
-
Disorder‐induced band‐tailing effects on deep levels in semiconductorsTeate, A. A. / Halder, N. C. et al. | 1991
- 1461
-
Hydrogenation of InAs on GaAs heterostructuresTheys, B. / Lusson, A. / Chevallier, J. / Grattepain, C. / Kalem, S. / Stutzmann, M. et al. | 1991
- 1467
-
Estimation of the alloy scattering strength in Hg0.8Cd0.2Te from the magnetic field dependence of the longitudinal resistivity in the extreme quantum limitBanerji, Pallab / Sarkar, C. K. et al. | 1991
- 1471
-
Ambipolar diffusion in strained Si1−xGex(100) layers grown by molecular beam epitaxyGrivickas, V. / Netiksis, V. / Noreika, D. / Petrauskas, M. / Willander, M. / Ni, W.‐X. / Hasan, M.‐A. / Hansson, G. V. / Sundgren, J.‐E. et al. | 1991
- 1475
-
An improved ionized‐impurity scattering model for Monte Carlo simulationsKay, L. E. / Tang, T.‐W. et al. | 1991
- 1483
-
Monte Carlo calculation of strained and unstrained electron mobilities in Si1−xGex using an improved ionized‐impurity modelKay, L. E. / Tang, T.‐W. et al. | 1991
- 1489
-
Semiconducting low-pressure, low-temperature cesium plasma with undirectional conductionSvensson, R. / Holmild, L. / Lundgren, L. et al. | 1991
- 1489
-
Semiconducting low‐pressure, low‐temperature cesium plasma with unidirectional conductionSvensson, Robert / Holmlid, Leif / Lundgren, Lennart et al. | 1991
- 1493
-
A novel approach for including band‐structure effects in a Monte Carlo simulation of electron transport in siliconVogelsang, Th. / Ha¨nsch, W. et al. | 1991
- 1500
-
Trapping and trap creation studies on nitrided and reoxidized‐nitrided silicon dioxide films on siliconDiMaria, D. J. / Stathis, J. H. et al. | 1991
- 1500
-
Trapping and creation studies on nitrided and reoxidized-nitrided silicon dioxide films on siliconDiMaria, D.J. / Stathis, J.H. et al. | 1991
- 1510
-
Moderate‐temperature anneal of 7‐nm thermal SiO2 in O2‐ and H2O‐free atmosphere: Effects on Si‐SiO2 interface‐trap distributionDori, L. / Stathis, J. H. / Tornello, J. A. et al. | 1991
- 1517
-
Dopant deactivation and annealing characteristics of metal‐oxide‐semiconductor structures on germanium/boron‐doped silicon after gamma irradiation or Fowler–Nordheim charge injectionHashemipour, O. / Ang, S. S. / Brown, W. D. / Yeargan, J. R. / West, L. et al. | 1991
- 1522
-
Monte Carlo modeling of electron transport in a Si metal‐oxide‐semiconductor inversion layer including quantum state and bulk scatteringImanaga, Syunji / Hayafuji, Yoshinori et al. | 1991
- 1531
-
Strained quantum well valence‐band structure and optimal parameters for AlGaAs‐InGaAs‐AlGaAs p‐channel field‐effect transistorsLaikhtman, B. / Kiehl, R. A. / Frank, D. J. et al. | 1991
- 1539
-
Investigation of interface states in (Sr,Ca)TiO3−x‐based ceramicsNakano, Yoshitaka / Watanabe, Masamitsu / Takahashi, Tomoharu et al. | 1991
- 1548
-
Hydrostatic pressure studies of an asymmetrically doped resonant tunneling diodeOthaman, Z. / Peck, A. J. / Bending, S. J. / Saunders, G. A. / Rossmanith, M. / Ploog, K. / von Klitzing, K. et al. | 1991
- 1553
-
Low hydrogen content stoichiometric silicon nitride films deposited by plasma‐enhanced chemical vapor depositionParsons, G. N. / Souk, J. H. / Batey, J. et al. | 1991
- 1561
-
Grain size dependence of 1/f noise in Al‐Cu thin‐film interconnectionsSchwarz, J. A. / Patrinos, A. J. / Bakshee, I. S. / Salkov, E. A. / Khizhnyak, B. I. et al. | 1991
- 1565
-
Temperature dependence of carrier density in depleted epitaxial layers deposited on semi‐insulating substratesWeiser, K. / Solomon, P. M. / Wright, S. L. / Parker, B. et al. | 1991
- 1570
-
Effects of oxygen content and oxide layer thickness on interface state densities for metal‐oxynitride‐oxide‐silicon devicesXu, Dan / Kapoor, Vik J. et al. | 1991
- 1575
-
Study of silver addition to Y1Ba2Cu3O7−y screen printed thick filmsDhingra, Indu / Padam, G. K. / Singh, Satbir / Tripathi, R. B. / Rao, S. U. M. / Suri, D. K. / Nagpal, K. C. / Das, B. K. et al. | 1991
- 1580
-
Fabrication, characterization, and theoretical analysis of high‐Tc Y‐Ba‐Cu‐O superconducting films prepared by a chemical sol gel methodHussain, A. A. / Sayer, M. et al. | 1991
- 1591
-
Oxygen desorption from YBa2Cu3O7−x and Bi2CaSr2Cu2O8+δ superconductorsMesarwi, A. / Levenson, L. L. / Ignatiev, A. et al. | 1991
- 1591
-
Oxygen desorption from YBa(2)Cu(3)O(7-x) and Bi(2)CaSr(2)Cu(2)O(8+delta) superconductorsMesarwi, A. / Levenson, L.L. / Agnatiev, A. et al. | 1991
- 1596
-
Comparison of Bi‐system 2223 and 2212 thick superconducting tapes: Grain alignment, current density, and strain effectsSekine, H. / Schwartz, J. / Kuroda, T. / Inoue, K. / Maeda, H. / Numata, K. / Yamamoto, H. et al. | 1991
- 1600
-
Metalorganic chemical vapor deposition of Bi‐Sr‐Ca‐Cu‐O ultrathin filmsSugimoto, Tsunemi / Yoshida, Masaji / Yuhya, Sigenori / Baar, David J. / Shiohara, Yuh / Tanaka, Shouji et al. | 1991
- 1606
-
Poor intergrain connectivity of PbMo6S8 in sintered Mo‐sheathed wires and the beneficial effect of hot‐isostatic‐pressing treatments on the transport critical current densityYamasaki, H. / Umeda, M. / Kosaka, S. / Kimura, Y. / Willis, T. C. / Larbalestier, D. C. et al. | 1991
- 1614
-
Cation distribution and intrinsic magnetic properties of Co‐Ti‐doped M‐type barium ferriteBatlle, X. / Obradors, X. / Rodri´guez‐Carvajal, J. / Pernet, M. / Caban˜as, M. V. / Vallet, M. et al. | 1991
- 1624
-
Bismuth‐ and aluminum‐substituted YIG single‐crystal films on modified gadolinium gallium garnet single‐crystal substratesMatsumoto, Koji / Sasaki, Satoshi / Yamanobe, Yasunori / Yamaguchi, Kazuhiro / Fujii, Toshitaka / Asahara, Yousuke et al. | 1991
- 1630
-
X‐ray and phenomenological study of lanthanum‐modified lead zirconate‐titanates in the vicinity of the relaxor phase transition regionRossetti, G. A. / Nishimura, T. / Cross, L. E. et al. | 1991
- 1638
-
Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor‐phase epitaxyBanvillet, H. / Gil, E. / Cadoret, R. / Disseix, P. / Ferdjani, K. / Vasson, A. / Vasson, A. M. / Tabata, A. / Benyattou, T. / Guillot, G. et al. | 1991
- 1642
-
Measurements of the optical constants of solid and molten gold and tin at λ=10.6 μmBru¨ckner, M. / Scha¨fer, J. H. / Schiffer, C. / Uhlenbusch, J. et al. | 1991
- 1648
-
Electrical and optical properties of CuAlSe2 grown by iodine chemical vapor transportChichibu, S. / Shishikura, M. / Ino, J. / Matsumoto, S. et al. | 1991
- 1656
-
Poled polymers for optical testing of electrical circuitsGauterin, F. / Ja¨ger, D. et al. | 1991
- 1660
-
Dislocations in mismatched layers of GaAsxP1−x in between GaP as observed by low‐temperature cathodoluminescence: Part I. Grown on (001) oriented substrates.Gustafsson, A. / Pistol, M.‐E. / Gerling, M. / Samuelson, L. / Leys, M. R. / Titze, H. et al. | 1991
- 1667
-
Dislocations in mismatched layers of GaAsxP1−x in between GaP as observed by low‐temperature cathodoluminescence: Part II. Grown on (111) oriented substratesGustafsson, A. / Pistol, M.‐E. / Gerling, M. / Samuelson, L. / Titze, H. et al. | 1991
- 1672
-
Optical properties of InSb films deposited on sapphire substrates by rf sputteringMiyazaki, Takayuki / Adachi, Sadao et al. | 1991
- 1678
-
Raman scattering and photoluminescence analysis of silicon on insulator structures obtained by single and multiple oxygen implantsPe´rez‐Rodri´guez, A. / Cornet, A. / Morante, J. R. / Jime´nez, J. / Hemment, P. L. F. / Homewood, K. P. et al. | 1991
- 1684
-
A thermo‐mechanical model for laser ablationZweig, A. D. et al. | 1991
- 1692
-
High‐rate (∼50‐A˚/s) deposition of ZnO films for amorphous silicon alloy solar‐cell back‐reflector applicationBanerjee, A. / Wolf, D. / Yang, J. / Guha, S. et al. | 1991
- 1692
-
High-rate (about 50-A.U./s) deposition of ZnO films for amorphous silicon alloy solar-cell back-reflector applicationBanerjee, A. / Wolf, D. / Yang, J. / Guha, S. et al. | 1991
- 1695
-
Mechanism of diamond growth by chemical vapor deposition on diamond (100), (111), and (110) surfaces: Carbon‐13 studiesChu, C. J. / D’Evelyn, M. P. / Hauge, R. H. / Margrave, J. L. et al. | 1991
- 1706
-
Vapor deposition processes for amorphous carbon films with sp3 fractions approaching diamondCuomo, Jerome J. / Pappas, David L. / Bruley, John / Doyle, James P. / Saenger, Katherine L. et al. | 1991
- 1712
-
Removal of fluorocarbon residue on Si with an electron cyclotron resonance excited Ar plasmaDelfino, M. / Salimian, S. / Hodul, D. et al. | 1991
- 1718
-
Investigation of the mechanism of Ar+ ion‐assisted Cl2 etching of GaAs{110}: Role of ion‐induced charge acceptor statesDeLouise, L. A. et al. | 1991
- 1730
-
Epitaxial orientation and morphology of β‐FeSi2 on (001) siliconGeib, K. M. / Mahan, John E. / Long, Robert G. / Nathan, Menachem / Bai, G. et al. | 1991
- 1737
-
Reflectance difference for in situ control of surface V/III ratio during epitaxial growth of GaAsJo¨nsson, J. / Paulsson, G. / Samuelson, L. et al. | 1991
- 1742
-
Effects of phosphorus doping level and the annealing treatment on the oxidation kinetics of tungsten silicideLee, Chong Mu / Han, Suk Bin / Im, Ho Bin / Lee, Jong Gil et al. | 1991
- 1750
-
High‐energy Si implantation into InP:FeNadella, Ravi K. / Rao, Mulpuri V. / Simons, David S. / Chi, Peter H. / Fatemi, M. / Dietrich, H. B. et al. | 1991
- 1758
-
The influence of thermal treatment on the elastic‐plastic properties of the metallic glass surfaceNovikov, V. N. et al. | 1991
- 1761
-
Photoacoustic frequency‐domain depth profiling of continuously inhomogeneous condensed phases: Theory and simulations for the inverse problemMandelis, Andreas / Peralta, Samuel B. / Thoen, Jan et al. | 1991
- 1771
-
Quantitative photoacoustic depth profilometry of magnetic field‐induced thermal diffusivity inhomogeneity in the liquid crystal octylcyanobiphenylMandelis, Andreas / Schoubs, Els / Paralta, Samuel B. / Thoen, Jan et al. | 1991
- 1778
-
Transport dynamics of a 19‐MeV, 700‐kA electron beam in a 10.8‐m gas cellSanford, T. W. L. / Halbleib, J. A. / McAtee, W. H. / Mikkelson, K. A. / Mock, R. C. / Poukey, J. W. / Welch, D. R. et al. | 1991
- 1793
-
High resolution electron beam lithography with a polydiacetylene negative resist at 50 kVDobisz, E. A. / Marrian, C. R. K. / Colton, R. J. et al. | 1991
- 1800
-
Revealing process‐induced strain fields in GaAs/AlGaAs lasers via electron irradiation in a scanning electron microscopeJakubowicz, A. et al. | 1991
- 1806
-
Stability of high‐quality Nb/AlOx/Nb Josephson junctionsMorohashi, Shin’ichi / Yoshida, Akira / Hasuo, Shinya et al. | 1991
- 1811
-
Electric field and conduction current in ac thin‐film electroluminescent display devicesSingh, Vijay P. / Krishna, Srinivas / Morton, David C. et al. | 1991
- 1820
-
Rotational dynamics of passive high Tc superconducting bearingsWeeks, David E. et al. | 1991
- 1826
-
The dependence of stiction and friction on roughness in thin‐film magnetic recording disksRaman, V. / Tang, Wing T. / Jen, D. / Reith, T. R. et al. | 1991
- 1837
-
Role of atomic mass of underlayer material in the transition noise of longitudinal mediaYogi, Tadashi / Nguyen, Thao / Lambert, Steven E. / Gorman, Grace L. / Kakalec, Michael A. / Castillo, Gil et al. | 1991
- 1841
-
Yellow–green luminescence from isoelectronic nitrogen centers in GaP grown by molecular‐beam epitaxyBaillargeon, J. N. / Cheng, K. Y. et al. | 1991
- 1844
-
The nonproportionality of interface‐trap generation to hole trapping efficiency in metal‐oxide‐silicon devicesChen, I. C. / Wei, C. C. / Teng, C. W. et al. | 1991
- 1847
-
Analysis of the acoustic response of vascular tissue irradiated by an ultraviolet laser pulseCrazzolara, H. / von Muench, W. / Rose, C. / Thiemann, U. / Haase, K. K. / Ritter, M. / Karsch, K. R. et al. | 1991
- 1850
-
Transmission electron microscopy study of N+‐implanted silicon on insulator by energy‐filtered imagingDuan, X. F. / Du, A. Y. / Chu, Y. M. et al. | 1991
- 1853
-
Low‐temperature mesotaxy of ion beam synthesized ErSi2Golanski, A. / Park, J. L. / Pennycook, S. J. / White, C. W. et al. | 1991
- 1856
-
Characteristics of a sputtered Y‐Ba‐Cu‐O thin‐film dc superconducting quantum interference device prepared by rf sputteringGoto, Toshinari / Ying, Xing Bao / Park, Chan Hoon / Takeda, Yuji / Usami, Koichi / Kobayashi, Tadayuki et al. | 1991
- 1858
-
Growth of pseudomorphic insulating HoF3 layers on Si(111)Griffiths, C. L. / Macdonald, J. E. / Williams, R. H. et al. | 1991
- 1861
-
A comment on dielectric theory: Differential equations and permittivityKliem, H. et al. | 1991
- 1863
-
An equation of state applied to plastics, rubbers, glasses, and polymersKumari, Mithlesh / Dass, Narsingh et al. | 1991
- 1866
-
Theory of the effect of magnetic field on the excitonic photoluminescence linewidth in semiconductor alloysMena, R. A. / Sanders, G. D. / Bajaj, K. K. / Dudley, S. C. et al. | 1991
- 1869
-
Above‐band‐gap photoluminescence from Si fine particles with oxide shellMorisaki, H. / Ping, F. W. / Ono, H. / Yazawa, K. et al. | 1991
- 1871
-
In situ doped polycrystalline silicon selective growth using the SiH2Cl2/H2/HCl/PH3 gas systemOhshita, Yoshio / Kitajima, Hiroshi et al. | 1991
- 1874
-
Fluorine‐enhanced nitridation of silicon at low temperatures in a microwave plasmaRay, S. K. / Maiti, C. K. / Chakrabarti, N. B. et al. | 1991
- 1877
-
Reduction of flux creep in spite of a jc decrease in YBa2Cu3O7−δ after neutron irradiationSchindler, W. et al. | 1991
- 1877
-
Reduction of flux creep in spite of a jc decrease in YBa(2)Cu(3)O(7-delta) after neutron irradiationSchindler, W. et al. | 1991
- 1880
-
Twice sum-frequency mixing of a dual-wavelength Nd:YALO3 laser to get 413.7-nm violet coherent radiation in LiLO3 crystalShen, H.Y. / Lin, W.X. / Zeng, R.R. / Zhou, Y.P. / Yu, G.F. / Huang, C.H. / Zeng, Z.D. / Zhang, W.J. et al. | 1991
- 1880
-
Twice sum‐frequency mixing of a dual‐wavelength Nd:YALO3 laser to get 413.7‐nm violet coherent radiation in LiIO3 crystalShen, H. Y. / Lin, W. X. / Zeng, R. R. / Zhou, Y. P. / Yu, G. F. / Huang, C. H. / Zeng, Z. D. / Zhang, W. J. et al. | 1991
- 1882
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An inverse‐scattering model for an all‐optical logic gateTamil, Lakshman S. / Jordan, Arthur K. et al. | 1991
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Valence‐band states of ion‐bombarded polystyreneTerrasi, A. / Foti, G. / Hwu, Y. / Margaritondo, G. et al. | 1991
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Enhanced line emission from laser‐produced plasmasTimmer, C. / Srivastava, S. K. / Hall, T. E. / Fucaloro, A. F. et al. | 1991
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The isotope effect of boron implantation in silicon simulatedTsatis, Demetre E. et al. | 1991
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cw femtosecond pulses tunable in the near‐ and midinfraredWachman, E. S. / Pelouch, W. S. / Tang, C. L. et al. | 1991
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Studies of resonant and preresonant femtosecond degenerate four‐wave mixing in unoriented conducting polymersWong, K. S. / Han, S. G. / Vardeny, Z. V. et al. | 1991
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Frequency dependence of transconductance on deep traps in GaAs metal semiconductor field‐effect transistorsZhao, Jian H. / Tang, Pin F. / Hwang, Robert / Chang, Steven et al. | 1991
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Mechanism of phase‐shifted distributed‐feedback laser with linearly chirped grating for stable‐mode operationZhou, Ping / Lee, G. S. et al. | 1991