Erratum: Focused ion beam microlithography using an etch‐stop process in gallium‐doped silicon [J. Vac. Sci. Technol. B 1, 1056 (1983)] (English)
- New search for: La Marche, P. H.
- New search for: Levi‐Setti, R.
- New search for: Wang, Y. L.
- New search for: La Marche, P. H.
- New search for: Levi‐Setti, R.
- New search for: Wang, Y. L.
In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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2
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89
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1984
- Article (Journal) / Electronic Resource
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Title:Erratum: Focused ion beam microlithography using an etch‐stop process in gallium‐doped silicon [J. Vac. Sci. Technol. B 1, 1056 (1983)]
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Additional title:Erratum: Focused ion beam microlithography
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Contributors:
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:1984-01-01
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Size:1 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 2, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Tunability of bipolar conductivity in GaAs doping superlatticesKünzel, H. / Fischer, A. / Ploog, K. et al. | 1984
- 10
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Electronic transport properties of TiSi2 thin filmsMalhotra, V. / Martin, T. L. / Mahan, J. E. et al. | 1984
- 16
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Hydrogenic impurity states in a quantum well wireLee, Johnson / Spector, Harold N. et al. | 1984
- 21
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Atom‐probe study of silicide formation at Ni/Si interfacesNishikawa, Osamu / Shibata, Mezame / Yoshimura, Toshihiko / Nomura, Eiichi et al. | 1984
- 24
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Lattice‐matched single‐crystalline dielectric films (BaxSr1−xF2) on InP(001) grown by molecular‐beam epitaxyTu, C. W. / Sheng, T. T. / Macrander, A. T. / Phillips, J. M. / Guggenheim, H. J. et al. | 1984
- 27
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CF4/silicon surface reactions: Evidence for parallel etching mechanisms from modulated ion beam studiesMcNevin, S. C. / Becker, G. E. et al. | 1984
- 34
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Oxygen ion beam etching for pattern transferGokan, H. / Itoh, M. / Esho, S. et al. | 1984
- 38
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Reactive ion beam etching: Dissociation of molecular ions upon impactSteinbrüchel, Ch. et al. | 1984
- 45
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Direct transfer of resist grating patterns onto InP by reactive‐ion etching using CCl4/O2Hirata, Kazuo / Mikami, Osamu / Saitoh, Tadashi et al. | 1984
- 49
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Silicon nitride film deposition by hot‐wall plasma‐enhanced CVD for GaAs LSIIshii, Yasunobu / Aoki, Tatsuo / Miyazawa, Shintaro et al. | 1984
- 54
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Contact resistance monitor for silicon integrated circuitsFaith, T. J. / Irven, R. S. / Reed, L. H. / O’Neill, J. J. / Jones, M. C. / Levin, B. B. et al. | 1984
- 58
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Dose control with high power ion beams on photoresist masked targetsSteeples, K. et al. | 1984
- 63
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Submicron pattern replication using a high contrast mask and two‐layer resist in x‐ray lithographySaitoh, Yasunao / Yoshihara, Hideo / Watanabe, Iwao / Nakayama, Satoshi et al. | 1984
- 68
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High contrast x‐ray mask preparationOno, Toshiro / Ozawa, Akira et al. | 1984
- 73
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Promising cathode materials for high brightness electron beamsZaima, Shigeaki / Adachi, Hiroshi / Shibata, Yukio et al. | 1984
- 79
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The common anion rule: An electrochemical contributionGautron, Jacques / Sculfort, Jean‐Lou et al. | 1984
- 82
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A method for eliminating hillocks in integrated‐circuit metallizationsCadien, K. C. / Losee, D. L. et al. | 1984
- 84
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Sputtering of silicon nitride with hydrogen ionsZalm, P. C. / Beckers, L. J. et al. | 1984
- 85
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Reactive ion etching of GaAs in a chlorine plasmaHu, E. L. / Howard, R. E. et al. | 1984
- 89
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Erratum: Focused ion beam microlithography using an etch‐stop process in gallium‐doped silicon [J. Vac. Sci. Technol. B 1, 1056 (1983)]La Marche, P. H. / Levi‐Setti, R. / Wang, Y. L. et al. | 1984
- 90
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Book Review: Laser annealing of semiconductorsBiegelsen, David et al. | 1984