Band offset transitivity at the InGaAs/InAlAs/InP(001) heterointerfaces (English)
National licence
- New search for: Hybertsen, Mark S.
- New search for: Hybertsen, Mark S.
In:
Applied Physics Letters
;
58
, 16
;
1759-1761
;
1991
- Article (Journal) / Electronic Resource
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Title:Band offset transitivity at the InGaAs/InAlAs/InP(001) heterointerfaces
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Contributors:Hybertsen, Mark S. ( author )
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Published in:Applied Physics Letters ; 58, 16 ; 1759-1761
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Publisher:
- New search for: American Institute of Physics
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Publication date:1991-04-22
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 58, Issue 16
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1695
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Femtosecond dynamics of the nonlinear optical response in polydiethynylsilaneWong, K. S. / Han, S. G. / Vardeny, Z. V. / Shinar, J. / Pang, Y. / Ijadi‐Maghsoodi, S. / Barton, T. J. / Grigoras, S. / Parbhoo, B. et al. | 1991
- 1698
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Internal light‐coupled optical device arrayNakano, Yoshinori / Ikeda, Masahiro / Kawakami, Wataru / Kitayama, Ken‐ichi et al. | 1991
- 1701
-
Na2 violet band excimer emission by electron beam excitationXing, Da / Ueda, Ken‐ichi / Takuma, Hiroshi et al. | 1991
- 1704
-
Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrateChand, Naresh / Becker, E. E. / van der Ziel, J. P. / Chu, S. N. G. / Dutta, N. K. et al. | 1991
- 1707
-
1.3 mJ XeCl laser pumped by microwavesKlingenberg, H. H. / Gekat, F. et al. | 1991
- 1709
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Wavelength switching of picosecond pulse (<10 ps) in a quantum well laser and its all‐optical logic gating operationsSogawa, T. / Arakawa, Y. et al. | 1991
- 1712
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Degenerate four‐wave mixing in rhodamine doped epoxy waveguidesRossi, B. / Byrne, H. J. / Blau, W. et al. | 1991
- 1715
-
Ultrahigh‐efficiency optical modulation (≳20 W/A) by interferometric frequency→intensity conversion of gain‐levered semiconductor lasersLau, K. Y. et al. | 1991
- 1718
-
Continuously tunable, injection‐seeded β‐barium borate optical parametric oscillator: Spectroscopic applicationsHaub, J. G. / Johnson, M. J. / Orr, B. J. / Wallenstein, R. et al. | 1991
- 1721
-
Flexural resonant samples for submonolayer measurements of oxygen on Si surfacesDreyfus, Russell W. et al. | 1991
- 1724
-
Second‐order susceptibility in asymmetric quantum wells and its control by proton bombardmentYoo, S. J. B. / Fejer, M. M. / Byer, R. L. / Harris, J. S. et al. | 1991
- 1727
-
Light‐emitting devices based on the real‐space transfer of hot electronsLuryi, Serge et al. | 1991
- 1730
-
20 GHz electro‐optic polymer Mach–Zehnder modulatorGirton, D. G. / Kwiatkowski, S. L. / Lipscomb, G. F. / Lytel, R. S. et al. | 1991
- 1733
-
Fiber optic magnetic field sensor based on domain wall motion in garnet film waveguidesWolfe, R. / Lieberman, R. A. et al. | 1991
- 1736
-
Transverse junction vertical‐cavity surface‐emitting laserSchaus, C. F. / Torres, A. J. / Cheng, Julian / Sun, S. / Hains, C. / Malloy, K. J. / Schaus, H. E. / Armour, E. A. / Zheng, K. et al. | 1991
- 1739
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Photoelectrochemical evidence for saturated optical absorption in electrolytic cuprous oxideSchwartz, Daniel T. / Muller, Rolf H. et al. | 1991
- 1742
-
Electron spin resonance study of laser‐annealed (Zn,Mn)O ceramicsKawano, Katsuyasu / Nakata, Ryouhei / Sumita, Minoru et al. | 1991
- 1745
-
Magnetocrystalline anisotropy of (100) face‐centered cubic Co structures deposited on Cu/Si(100)Chang, Chin‐An et al. | 1991
- 1748
-
Formation of ultrashallow p+ layers in silicon by thermal diffusion of boron and by subsequent rapid thermal annealingInada, T. / Kuranouchi, A. / Hirano, H. / Nakamura, T. / Kiyota, Y. / Onai, T. et al. | 1991
- 1751
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Cd‐H pairs in GaAs: Identification and stabilityPfeiffer, W. / Deicher, M. / Keller, R. / Magerle, R. / Recknagel, E. / Skudlik, H. / Wichert, Th. / Wolf, H. / Forkel, D. / Moriya, N. et al. | 1991
- 1754
-
Optical characterization of ZnSe/ZnS strained‐layer superlattices grown on CaF2 substratesYokogawa, Toshiya / Saitoh, Tohru / Narusawa, Tadashi et al. | 1991
- 1757
-
Negative electron affinity (Si‐Na2KSb‐Cs)‐O‐Cs photocathodeGuo, Tailiang / Gao, Huairong et al. | 1991
- 1759
-
Band offset transitivity at the InGaAs/InAlAs/InP(001) heterointerfacesHybertsen, Mark S. et al. | 1991
- 1762
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Surface reactions in the atomic layer epitaxy of GaAs using monoethylarsineMaa, B. Y. / Dapkus, P. D. et al. | 1991
- 1765
-
Low‐threshold disorder‐defined native‐oxide delineated buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasersKish, F. A. / Caracci, S. J. / Holonyak, N. / Dallesasse, J. M. / Ho¨fler, G. E. / Burnham, R. D. / Smith, S. C. et al. | 1991
- 1768
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Demonstration of laser‐assisted epitaxial deposition of GexSi1−x alloys on single‐crystal SiLombardo, S. / Smith, Paul Martin / Uttormark, M. J. / Brunco, D. P. / Kramer, K. / Thompson, Michael O. et al. | 1991
- 1771
-
Growth control of GaAs epilayers with specular surface free of pyramids and twins on nonmisoriented (111)B substratesChen, P. / Rajkumar, K. C. / Madhukar Devices Laboratory, A. et al. | 1991
- 1774
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Effect of oxidation processing on the energy distribution and charging time of radiation‐induced interface trapsSchwalke, U. / Kerber, M. et al. | 1991
- 1777
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Optical properties of a single strained InGaAs/GaAs quantum well grown on vicinal GaAs surfacesDroopad, R. / Puechner, R. A. / Shiralagi, K. T. / Choi, K. Y. / Maracas, G. N. et al. | 1991
- 1780
-
Low‐threshold operation of a GaAs single quantum well mushroom structure surface‐emitting laserYang, Y. J. / Dziura, T. G. / Fernandez, R. / Wang, S. C. / Du, G. / Wang, S. et al. | 1991
- 1783
-
Molecular beam epitaxy of a low strain II‐VI heterostructure: ZnTe/CdSeLuo, H. / Samarth, N. / Zhang, F. C. / Pareek, A. / Dobrowolska, M. / Furdyna, J. K. / Mahalingam, K. / Otsuka, N. / Chou, W. C. / Petrou, A. et al. | 1991
- 1786
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Magnetic hysteresis in integrated low Tc SQUID gradiometersKoch, R. H. / Ketchen, M. B. / Gallagher, W. J. / Sandstrom, R. L. / Kleinsasser, A. W. / Gambrel, D. R. / Field, T. H. / Matz, H. et al. | 1991
- 1789
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Clear correlations observed between YBa2Cu3O7−δ thin‐film properties and GHz microwave resonator performanceYoung, K. H. / Negrete, G. V. / Hammond, R. B. / Inam, A. / Ramesh, R. / Hart, D. L. / Yonezawa, Y. et al. | 1991
- 1792
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Flux pinning in Y1−xPrxBa2Cu3O7−δ high Tc superconductorsPaulius, L. M. / Tsai, P. K. / Neumeier, J. J. / Maple, M. B. / Chen, K. C. / Mazdiyasni, K. S. et al. | 1991
- 1795
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Enhanced photoemission from a bi‐metallic LaB6/Au photocathode structureScott, C. J. / Tang, X. / Spencer, M. G. et al. | 1991