Charge densities and wave functions of chalcogenide deep impurities in Si (English)
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- New search for: Ren, Shang Yuan
- New search for: Hu, Wei Min
- New search for: Sankey, Otto F.
- New search for: Dow, John D.
- New search for: Ren, Shang Yuan
- New search for: Hu, Wei Min
- New search for: Sankey, Otto F.
- New search for: Dow, John D.
In:
Physical Review B
;
26
, 2
;
951-954
;
1982
-
ISSN:
- Article (Journal) / Electronic Resource
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Title:Charge densities and wave functions of chalcogenide deep impurities in Si
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Contributors:Ren, Shang Yuan ( author ) / Hu, Wei Min ( author ) / Sankey, Otto F. ( author ) / Dow, John D. ( author )
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Published in:Physical Review B ; 26, 2 ; 951-954
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Publisher:
- New search for: The American Physical Society
-
Publication date:1982-07-15
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Size:4 pages
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ISSN:
-
DOI:
-
Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 26, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 471
-
Amorphous-nonmetal—to—crystalline-metal transition in electrochromic iridium oxide filmsHackwood, S. / Dayem, A. H. / Beni, G. et al. | 1982
- 479
-
Equivalence of hcp and fcc -band structures with nearest-neighbor-layer interactionsBetteridge, G. P. et al. | 1982
- 482
-
Surface-enhanced second-harmonic generation at a metallic gratingAgarwal, G. S. / Jha, Sudhansu S. et al. | 1982
- 497
-
Dispersion relations of surface phonons in LiF(001) and NaF(001)Benedek, G. / Brivio, G. P. / Miglio, L. / Velasco, V. R. et al. | 1982
- 507
-
Acoustic plasma modesAppel, J. / Overhauser, A. W. et al. | 1982
- 513
-
Local-field factors in cubic crystals. IIBonneville, R. et al. | 1982
- 520
-
Neutralization of 50-230-keV hydrogen ions which have penetrated Al, Au, C, and Cs filmsKreussler, Siegfried / Sizmann, Rudolf et al. | 1982
- 530
-
Conductivity increase due to nonequilibrium conditions in an actual quasi-one-dimensional conductor with charge- or spin-density-wave gapConwell, E. M. / Banik, N. C. et al. | 1982
- 536
-
Dynamical image potential of a slowly moving electronEkardt, W. et al. | 1982
- 546
-
Electronic structure of nickel silicides Si, NiSi, and NiFranciosi, A. / Weaver, J. H. / Schmidt, F. A. et al. | 1982
- 554
-
Core-level processes in the electron-stimulated desorption of CO from the W(110) surfaceHouston, J. E. / Madey, Theodore E. et al. | 1982
- 567
-
Muon diffusion and trapping in aluminum and dilute aluminum alloys: Experiments and comparison with small-polaron theoryKehr, K. W. / Richter, D. / Welter, J. -M. / Hartmann, O. / Karlsson, E. / Norlin, L. O. / Niinikoski, T. O. / Yaouanc, A. et al. | 1982
- 567
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Muon diffusion and trapping in aluminum and dilute aluminum alloysKehr, K.W. / Richter, D. / Welter, J.M. / Hartmann, O. / Karlsson, E. / Norlin, L.O. / Niinikoski, T.O. / Yaouanc, A. et al. | 1982
- 591
-
Strain-confined electron-hole liquid in Ge: Density variations and compressibilityKelso, S. M. et al. | 1982
- 614
-
Study of the edges in the transition metals and their oxides by electron-energy-loss spectroscopy with comparisons to theoryLeapman, R. D. / Grunes, L. A. / Fejes, P. L. et al. | 1982
- 636
-
Hyperfine fields and electronic structure of hydrogen impurities in transition metalsLindgren, B. / Ellis, D. E. et al. | 1982
- 648
-
Single-site mixed valence of thulium: A comparative photoemission study of andMårtensson, N. / Reihl, B. / Pollak, R. A. / Holtzberg, F. / Kaindl, G. / Eastman, D. E. et al. | 1982
- 654
-
Multiplet structures in reflection spectra of perovskite fluorides in the soft-x-ray regionOnuki, Hideo / Rife, Jack C. et al. | 1982
- 658
-
Mean-field theory of multilayer physisorption. II. Thermodynamic functions for and adsorbed on graphiteSommer, E. / Kreuzer, H. J. et al. | 1982
- 669
-
Resonant photo- and Auger emission at the threshold of Cu, O, and CuOThuler, M. R. / Benbow, R. L. / Hurych, Z. et al. | 1982
- 678
-
Self-consistent theory of magnetoconductance in two-dimensional Anderson localized systemsTing, C. S. et al. | 1982
- 687
-
Electronic structure of ZrWhangbo, M. -H. / DiSalvo, F. J. / Fleming, R. M. et al. | 1982
- 690
-
Application of the variational cellular method to periodic structures. Energy band of sodiumFerraz, Armando C. / Takahashi, Eduardo K. / Leite, José R. et al. | 1982
- 701
-
Electrical and magnetic properties of MnIn, MnSn, MnAl, and NiSn Heusler alloysHurd, C. M. / Shiozaki, I. / McAlister, S. P. et al. | 1982
- 710
-
Semiempirical description of energy bands in nickelWeling, F. / Callaway, J. et al. | 1982
- 720
-
Changes in the Raman spectrum of LiI induced by uniaxial stressMelo, F. E. A. / Cerdeira, F. et al. | 1982
- 729
-
Plasmon satellite in the valence-band photoemission spectra of metalsBose, Shyamalendu M. / Prutzer, Steven / Longe, Pierre et al. | 1982
- 736
-
Electric field gradient in dilute alloys of copperRaj, S. D. / Singh, J. / Prakash, S. et al. | 1982
- 743
-
Phonon spectra and crystal structure of Zn and Cd using the resonant model-potential approachUpadhyaya, J. C. / Dagens, L. et al. | 1982
- 753
-
Electronic properties of an ordered-disordered interfaceParent, L. G. / Ueba, H. / Davison, S. G. et al. | 1982
- 769
-
Importance of resonances in surface-electronic-state spectroscopy: (110) surfaces of ZnSe and ZnTeBeres, Richard P. / Allen, Roland E. / Dow, John D. et al. | 1982
- 773
-
Magnetoresistance in Si metal-oxide-semiconductor field-effect transitors: Evidence of weak localization and correlationBishop, D. J. / Dynes, R. C. / Tsui, D. C. et al. | 1982
- 780
-
Phonon spectroscopy of the electron-hole liquid in germaniumDietsche, W. / Kirch, S. J. / Wolfe, J. P. et al. | 1982
- 794
-
Surface optical phonons and hydrogen chemisorption on polar and nonpolar faces of GaAs, InP, and GaPDubois, L. H. / Schwartz, G. P. et al. | 1982
- 803
-
Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)--Sb(1 ML)Duke, C. B. / Paton, A. / Ford, W. K. / Kahn, A. / Carelli, J. et al. | 1982
- 815
-
Opto-electrochemical spectroscopy of trans-Feldblum, A. / Kaufman, J. H. / Etemad, S. / Heeger, A. J. / Chung, T. -C. / MacDiarmid, A. G. et al. | 1982
- 827
-
Photoluminescence studies of the 1.911-eV Cu-related complex in GaPGislason, H. P. / Monemar, B. / Dean, P. J. / Herbert, D. C. / Depinna, S. / Cavenett, B. C. / Killoran, N. et al. | 1982
- 846
-
Quasiband crystal-field method for calculating the electronic structure of localized defects in solidsLindefelt, Ulf / Zunger, Alex et al. | 1982
- 896
-
Correlation of stimulated -desorption threshold with localized state observed in Auger line shape—Si(100): HMadden, H. H. / Jennison, D. R. / Traum, M. M. / Margaritondo, G. / Stoffel, N. G. et al. | 1982
- 903
-
Phonon focusing of dispersive phonons in GeNorthrop, G. A. et al. | 1982
- 912
-
Screening effects on the system in semiconductorsPhelps, Dwight E. / Bajaj, K. K. et al. | 1982
- 917
-
Green's-function formalism of band-to-band Auger recombination in semiconductors. Correlation effectTakeshima, Masumi et al. | 1982
- 931
-
Influence of the exchange interaction on far-infrared spin-flip resonances in zero-gapWitowski, A. / Pastor, K. / Furdyna, J. K. et al. | 1982
- 940
-
Theory of Raman scattering from the orthorhombic commensurate phase of -TaWithers, R. L. / Walker, M. B. et al. | 1982
- 951
-
Charge densities and wave functions of chalcogenide deep impurities in SiRen, Shang Yuan / Hu, Wei Min / Sankey, Otto F. / Dow, John D. et al. | 1982
- 955
-
Soliton excitations and polarons in polyacetyleneAlbert, J. P. / Jouanin, C. et al. | 1982
- 960
-
Electronic structure of semiconductor surface inversion layers at finite temperature. The Si(100)-Si systemSarma, S. Das / Vinter, B. et al. | 1982
- 975
-
Exchange-polarization effects in insulators and semiconductorsLiu, L. et al. | 1982
- 984
-
Unoccupied electronic states in graphiteDose, V. / Reusing, G. / Scheidt, H. et al. | 1982
- 991
-
Conditions for charge fractionalizationPrange, R. E. et al. | 1982
- 998
-
Structural aspects of solid iodine associated with metallization and molecular dissociation under high pressureTakemura, K. / Minomura, S. / Shimomura, O. / Fujii, Y. / Axe, J. D. et al. | 1982
- 1005
-
Study of the dc and ac electrical properties of an yttria-stabilized zirconia single crystal [-]Abelard, P. / Baumard, J. F. et al. | 1982
- 1018
-
Model calculation of the pressure derivative of the low-frequency dielectric constant of alkali halide crystalsBanerjee, Lalit K. / Basu, A. N. / Sengupta, S. et al. | 1982
- 1028
-
Off-center Li in KC1: Infrared absorption and behavior under pressureSangster, M. J. L. / Stoneham, A. M. et al. | 1982
- 1036
-
Comments on positron annihilation and the vacancy properties of MgHood, G. M. et al. | 1982
- 1038
-
Electron and impurity correlations in doped semiconductorsKishore, R. / Lima, I. C. da Cunha / Fabbri, M. / da Silva, A. Ferreira et al. | 1982
- 1042
-
Physical background of Hooge's for noiseMusha, Toshimitsu et al. | 1982
- 1044
-
Ultraviolet two-photon absorption in alkali halidesAraújo, Cid B. de / Lotem, Haim et al. | 1982
- 1048
-
Influence of the second-nearest-neighbor hopping integrals on the electronic properties of bcc systems with electronsDerenne, M. / Brouers, F. / van der Rest, J. et al. | 1982
- 1050
-
Modified calculations on the wave-vector-dependent dielectric function for a model semiconductorSharma, Ami Chand / Auluck, Sushil et al. | 1982
- 1052
-
Screening of impurity ions in heavily doped semiconductorsGeetha, P. L. / Balasubramanian, S. et al. | 1982
- 1055
-
charge transfer at transition- and noble-metal surfacesKleinman, Leonard et al. | 1982
- 1058
-
charge transfer at transition- and noble-metal surfaces: A replyTersoff, J. / Falicov, L. M. et al. | 1982
- 1059
-
Comment on "Critique of the tight-binding method: Ideal vacancy and surface states"Vergés, J. A. et al. | 1982
- 1061
-
Reply to "Comment on `Critique of the tight-binding method: Ideal vacancy and surface states' "Krieger, J. B. / Laufer, Pinchus M. et al. | 1982
- 1063
-
Erratum: Structural origin of broken chemical order in a Ge glassBoolchand, P. / Grothaus, J. / Bresser, W. J. / Suranyi, P. et al. | 1982
- 1064
-
Electronic structure of glassJaswal, S. S. / Ching, W. Y. et al. | 1982
- 1067
-
Alternative exact method for random walks on finite and periodic lattices with trapsSoler, Jose M. et al. | 1982
- 1071
-
Core-electron binding-energy shifts at surfacesSmith, J. R. / Arlinghaus, F. J. / Gay, J. G. et al. | 1982
- 1075
-
Enhanced electric fields near gratingsMills, D.L. / Weber, M. et al. | 1982
- 1075
-
Enhanced electric fields near gratings: Comments on enhanced Raman scattering from surfacesMills, D. L. / Weber, M. et al. | 1982
- 1079
-
Time-reversal invariance and Raman measurements of phonon populations under nonequilibrium conditionsCompaan, A. / Lo, H. W. / Lee, M. C. / Aydinli, A. et al. | 1982
- 1082
-
Stress dependence of the metal-insulator transition in doped semiconductorsBhatt, R. N. et al. | 1982
- 1086
-
Interchain interaction and fractionally charged solitons in a commensurate charge-density-wave systemJensen, M. Høgh / Lomdahl, P. S. et al. | 1982