Thermal stability of Gd2O3/Si(100) interfacial transition layer (English)
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In:
Journal de Physique IV (Proceedings)
;
132
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273-277
;
2006
- Article (Journal) / Electronic Resource
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Title:Thermal stability of Gd2O3/Si(100) interfacial transition layer
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Contributors:Girardeaux, C. / al., et / Nohira, H. ( author ) / Yoshida, T. ( author ) / Okamoto, H. ( author ) / Shinagawa, S. ( author ) / Sakai, W. ( author ) / Nakajima, K. ( author ) / Suzuki, M. ( author ) / Kimura, K. ( author )
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Published in:Journal de Physique IV (Proceedings) ; 132 ; 273-277
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Publisher:
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Publication date:2006-03-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 132
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Electronic structure of organic titanium bis-phthalocyanine on InAs(001)4 x 2 - c(8 x 2)De Padova, P. et al. | 2006
- 1
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Electronic structure of organic titanium bis-phthalocyanine on InAs(001)4 × 2–c(8 × 2)De Padova, P. et al. | 2006
- 1
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Electronic structure of organic titanium bis-phthalocyanine on InAs(001)4 $\times$ 2–c(8 $\times$ 2)De Padova, P. / Quaresima, C. / Perfetti, P. / Olivieri, B. / Richter, M. C. / Heckmann, O. / Zerrouki, M. / Pennesi, G. / Paoletti, A. M. / Rossi, G. et al. | 2006
- 7
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Study of electric conductance of atomic or molecular wire in terms of the phase-shiftOtsuka, Y. / Shima, N. / Makoshi, K. et al. | 2006
- 11
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Soft X-ray photoelectron spectroscopy of metal-phthalocyanines on the (001) surface of GaAs and GeCabailh, G. / Holland, B. N. / Stephens, C. / McGovern, I. T. / McGuinness, C. / Cafolla, A. / Vearey-Roberts, A. R. / Evans, D. A. et al. | 2006
- 17
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Surface energy minimization struggle between Ge and Si on 4H-SiC(0001)-(3 $\times $ 3)Dentel, D. / Aït-Mansour, K. / Derivaz, M. / Kubler, L. / Diani, M. / Bolmont, D. / Bischoff, J. L. et al. | 2006
- 17
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Surface energy minimization struggle between Ge and Si on 4H-SiC(0001)-(3 × 3)Dentel, D. et al. | 2006
- 23
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Synchrotron light in semiconductor research: Three decades of revolutionMargaritondo, G. et al. | 2006
- 31
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UHV-STM study of single-walled carbon nanotubes applied to the GaAs(110) and InAs(110) surfacesRuppalt, L. B. / Albrecht, P. M. / Lyding, J. W. et al. | 2006
- 35
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Structural and photoemission studies of SrF2 adsorption on Si(001)Pasquali, L. / Suturin, S. M. / Balanev, A. / Kaveev, A. K. / Sokolov, N. S. / Doyle, B. P. / Borgatti, F. / Giglia, A. / Mahne, N. / Pedio, M. et al. | 2006
- 41
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Electrical barriers at semiconductor interfaces: Some reflections and future challengesWilliams, R. H. / Teng, K. S. / Wilks, S. P. et al. | 2006
- 49
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The (3 $\times$ 2) $\beta $-SiC(001) surface reconstruction investigated by photoelectron diffraction in the backscattering regimeMichel, E. G. / Dunham, D. / Tejeda, A. / Soukiassian, P. / Rotenberg, E. / Denlinger, J. D. et al. | 2006
- 49
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The (3 × 2) b-SiC(001) surface reconstruction investigated by photoelectron diffraction in the backscattering regimeMichel, E. et al. | 2006
- 57
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Electrical conduction through a monatomic surface stepMatsuda, I. / Hirahara, T. / Ueno, M. / Hobara, R. / Hasegawa, S. et al. | 2006
- 63
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Electronic properties of metal/MgO(001) interfacesLu, Y. / Assi, C. K. / Le Breton, J. C. / Turban, P. / Lépine, B. / Schieffer, P. / Jézéquel, G. et al. | 2006
- 69
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In situ reflectance anisotropy spectroscopy monitoring of wide bandgap biomolecules on vicinal silicon surfacesSilaghi, S. D. / Friedrich, M. / Zahn, D. R.T. et al. | 2006
- 73
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Optical properties of the interfaces in organic/organic multilayered heterostructuresGordan, O. D. / Hermann, S. / Friedrich, M. / Zahn, D. R.T. et al. | 2006
- 77
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Near monolayer deposition of palladium phthalocyanine and perylene tetracarboxylic diimide on Au(001): A STM studyGuillermet, O. / Glachant, A. / Mossoyan, M. / Mossoyan, J. C. et al. | 2006
- 83
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Valence charges for ultrathin SiO2 films formed on Si(100)Hirose, K. / Kihara, M. / Okamoto, H. / Nohira, H. / Ikenaga, E. / Takata, Y. / Kobayashi, K. / Hattori, T. et al. | 2006
- 87
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Two dimensional Sr silicate grown on Si(001) studied using X-ray Photoelectron SpectroscopyEl Kazzi, M. / Delhaye, G. / Gaillard, S. / Bergignat, E. / Hollinger, G. et al. | 2006
- 91
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Surface structure and energy bands of 1/3 ML Sn/Ge(111)Gori, P. / Pulci, O. / Cricenti, A. et al. | 2006
- 95
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X-ray photoelectron spectroscopy study of silicon interlayer based surface passivation for AlGaAs/GaAs quantum structures on (111) B surfacesAkazawa, M. / Shiozaki, N. / Hasegawa, H. et al. | 2006
- 101
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Characterisation of metal-organic semiconductor interfaces: In and Sn on CuPcAristov, V. Yu. / Molodtsova, O. V. / Zhilin, V. M. / Vyalikh, D. V. / Knupfer, M. et al. | 2006
- 105
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Electronic properties of intrinsic and heavily doped AlN and GaNFerreira da Silva, A. / Persson, C. et al. | 2006
- 111
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Electron emission from nano-structured carbon composite materials — an important role of the interface for enhancing the emissionHiraki, H. / Jiang, N. / Wang, H. X. / Hiraki, A. et al. | 2006
- 117
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In situ formation of a new Al-Pd-Mn-Si quasicrystalline phase on the pentagonal surface of the Al-Pd-Mn quasicrystalLongchamp, J.-N. / Erbudak, M. / Weisskopf, Y. et al. | 2006
- 121
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Potassium doped CuPc: Electronic and atomic structure formationMolodtsova, O. V. / Aristov, V. Yu. / Zhilin, V. M. / Vyalikh, D. V. / Knupfer, M. et al. | 2006
- 127
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Thermal diffusion of indium in perylenetetracarboxylic dianhydrideHudej, R. / Bratina, G. et al. | 2006
- 133
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Nucleation of SiC nanocrystals at the Si/SiO2 interface: Effect of the interface propertiesPongrácz, A. / Battistig, G. / Tóth, A. L. / Makkai, Zs. / Dücső, Cs. / Josepovits, K. V. / Bársony, I. et al. | 2006
- 137
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Characteristics of metal-silicon carbide tunnel contactAroutiounian, V. M. / Buniatyan, V. V. / Soukiassian, P. G. / Buniatyan, Vaz. V. et al. | 2006
- 141
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Formation of nanoclusters containing In and Sb atomsSaito, M. / Sasaki, H. / Sasaki, T. / Mori, M. / Tambo, T. / Tatsuyama, C. et al. | 2006
- 147
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Surface reactivity of InSb studied by cyclic voltammetry coupled to XPSKünstler-Hourriez, B. / Erné, B. / Lefévre, F. / Lorans, D. / Canava, B. / Herlem, M. / Etcheberry, A. et al. | 2006
- 153
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Magnetic and structural properties of Mn/InSb(001)Zerrouki, M. / De Padova, P. / Quaresima, C. / Perfetti, P. / Richter, M. C. / Heckmann, O. / Hricovini, K. et al. | 2006
- 159
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Orientation and interface effects on the structural and magnetic properties of MnAs-on-GaAs hybrid structuresDäweritz, L. / Kolovos-Vellianitis, D. / Trampert, A. / Herrmann, C. / Ploog, K. H. / Bauer, E. / Locatelli, A. / Cherifi, S. / Heun, S. et al. | 2006
- 163
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Effect of thermal annealing on the optical properties of self-assembled Ge/Si quantum dotsNguyen-Duc, T. K. / Le Thanh, V. / Derrien, J. / Yam, V. / Boucaud, P. / Bouchier, D. et al. | 2006
- 171
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IV characteristics in structures prepared by tip induced oxidationCambel, V. / Šoltýs, J. / Martaus, J. / Moško, M. et al. | 2006
- 177
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Observation of growth during the MOVPE of III-nitridesHardtdegen, H. / Kaluza, N. / Steins, R. / Cho, Y. S. / Schmidt, R. / Sofer, Z. / Zettler, J.-T. et al. | 2006
- 185
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Photocatalysis over titania on iron oxideKwi Cheol Kim / Chong Soo Han et al. | 2006
- 189
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Structural investigation of organosilane self-assembled monolayers by atomic scale simulationYamamoto, H. / Watanabe, T. / Nishiyama, K. / Tatsumura, K. / Ohdomari, I. et al. | 2006
- 195
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Alkylation of Silicon(111) surfacesRivillon, S. / Chabal, Y. J. et al. | 2006
- 199
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Metal induced gap states at tetratetracontane/Cu interfaceKiguchi, M. / Yoshikawa, G. / Saiki, K. / Arita, R. / Aoki, H. et al. | 2006
- 205
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Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystemsPelosi, C. / Bosi, M. / Attolini, G. / Prutskij, T. et al. | 2006
- 211
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Raman characterization of the In0.14Ga0.86As0.13Sb0.87 highly doped with Te grown on GaSb by liquid phase epitaxy*Díaz-Reyes, J. / López-Cruz, E. / Mendoza-Álvarez, J. G. / Jiménez-Sandoval, S. et al. | 2006
- 215
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Pulsed electron beam annealing: A tool for post-implantation damage control in SiCBrink, D. J. / Kunert, H. W. / Malherbe, J. B. / Camassel, J. et al. | 2006
- 221
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Formation of planar defects during the initial growth of M-plane GaN on LiAlO2(100)Trampert, A. / Liu, T. Y. / Brandt, O. / Ploog, K. H. et al. | 2006
- 225
-
Interface formation and structural properties of iron films on Al0.48 In0.52As(001)Schieffer, P. / Tournerie, N. / Lépine, B. / Lallaizon, C. / Guivarc'h, A. / Jézéquel, G. et al. | 2006
- 231
-
Structural and magnetic properties of Ge1-xMnx-Ge(001) 2 × 1 diluted magnetic semiconductorsDe Padova, P. et al. | 2006
- 231
-
Structural and magnetic properties of Ge$_{1-{\rm x}}$Mnx/Ge(001) 2 $\times$ 1 diluted magnetic semiconductorsDe Padova, P. / Quaresima, C. / Perfetti, P. / Zema, N. / Grazioli, C. / Veronese, M. / Olivieri, B. / Richter, M. C. / Heckmann, O. / D'Orazio, F. et al. | 2006
- 237
-
Nano-domains segmentation on AFM imagesLuciani, X. / Patrone, L. / Courmontagne, P. et al. | 2006
- 243
-
He scattering study of Au(111) nanostructured by ion sputteringCavanna, D. / Bracco, G. et al. | 2006
- 249
-
Precisely controlled anodic etching for processing of GaAs-based quantum nanostructures and devicesShiozaki, N. / Sato, T. / Akazawa, M. / Hasegawa, H. et al. | 2006
- 255
-
AES measurements of Sb mass transport in amorphous Si thin filmsNyéki, J. / Girardeaux, C. / Rolland, A. / Bernardini, J. et al. | 2006
- 259
-
Effects of interface roughness on the local valence electronic structure at the SiO2/Si interface: Soft X-ray absorption and emission studyYamashita, Y. / Yamamoto, S. / Mukai, K. / Yoshinobu, J. / Harada, Y. / Tokushima, T. / Takata, Y. / Shin, S. et al. | 2006
- 263
-
Wet chemical nitridation of GaAs(001) surfaceBerkovits, V. L. / Karpenko, A. N. / Masson, L. / Ulin, V. P. et al. | 2006
- 269
-
Growth of aluminum oxide thin films on Cobalt: An AES and AFM studyOughaddou, H. / Vizzini, S. / Aufray, B. / Ealet, B. / Bibérian, J. P. / Ravel, L. / Gay, J.-M. / d'Avitaya, F. A. et al. | 2006
- 273
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Thermal stability of Gd2O3/Si(100) interfacial transition layerNohira, H. / Yoshida, T. / Okamoto, H. / Shinagawa, S. / Sakai, W. / Nakajima, K. / Suzuki, M. / Kimura, K. / Ng Jin Aun / Kobayashi, Y. et al. | 2006
- 279
-
Preparation and characterization of HfO2 thin films by photo-assisted MOCVDKanashima, T. / Tada, T. / Okuyama, M. et al. | 2006
- 285
-
Formation of epitaxial strontium oxide and silicate on silicon (001)Delhaye, G. / El Kazzi, M. / Gaillard, S. / Gendry, M. / Hollinger, G. et al. | 2006
- 291
-
Physical property analysis of C-doped GaAs as function of the carrier concentration grown by MOCVD using elemental arsenic as precursorDíaz-Reyes, J. / Avendaño, M. A. / Galván-Arellano, M. / Peña-Sierra, R. et al. | 2006
- 295
-
Polarized photoluminescence of the of GaInP2 layers grown on GaAs and Ge substrates by MOVPE techniquePrutskij, T. / Pelosi, C. / Brito-Orta, R. et al. | 2006
- 301
-
Growth of long range ordered pentacene/benzenethiol/Cu(100) heterostructureKanjilal, A. / Bussolotti, F. / Crispoldi, F. / Beccari, M. / Di Castro, V. / Grazia Betti, M. / Mariani, C. et al. | 2006
- 307
-
Vibration modes and interface abruptness of CdSe quantum dots, embedded either in BeTe or ZnSeGeurts, J. / Bass, U. / Mahapatra, S. / Brunner, K. / Muck, T. / Wagner, V. et al. | 2006
- 311
-
Ordered silicon structures on silver (100) at 230°CLeandri, C. / Aufray, B. / Le Lay, G. / Girardeaux, C. / Ottaviani, C. / Cricenti, A. et al. | 2006
- 315
-
The properties of GaInP/GaAs heterostructures as a function of growth temperaturePelosi, C. / Attolini, G. / Bosi, M. / Martín, E. / Martinez, O. / Sanz, L. F. / Jiménez, J. / Prutskij, T. et al. | 2006
- 321
-
Effect of ageing on the statical and time-resolved photoluminescence spectra of porous siliconHuy, Bui / Van Hoi, Pham / Phi Hoa Binh / Tran Thi Kim Chi / Le Quang Huy / Nguyen Quang Liem et al. | 2006
- 325
-
Reflectance calculation of a diamond-like carbon/porous Si thin films in silicon-based photovoltaic cellsMartirosyan, Kh. S. / Aroutiounian, V. M. / Soukiassian, P. et al. | 2006
- 329
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Raman active modes of one–, two–, and three–phonon processes in the most important compounds and semiconductors with the rhombic, tetragonal, regular, trigonal, and hexagonal structuresKunert, H. W. / Barnas, J. / Brink, D. J. / Malherbe, J. et al. | 2006
- 337
-
Density of occupied and unoccupied states monitored during metal deposition onto phthalocyanine layersGorgoi, M. / Zahn, D. R.T. et al. | 2006
- 341
-
Efficiency improvement of white organic light emitting diodes with a mixed electron transporting layerUeng, Uerng-Yih / Tseng, Ching-Huei / Yokoyama, Meiso et al. | 2006
- 345
-
Using [Naphthyl-substituted benzidine derivative] (NPB): Tris-(8-hydroxyquinoline)-aluminum(III) (Alq3) mixed Layer to improve the efficiency of organic light emitting diodesTseng, Ching-Huei / Ueng, Uerng-Yih / Yokoyama, Meiso et al. | 2006
- 351
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The exciplex emission of organic light emitting diodes with 5, 6, 11, 12-tetraphenylnaphthacene (Rubrene)-doped hole transport layerTseng, Ching-Huei / Ueng, Uerng-Yih / Yokoyama, Meiso et al. | 2006
- 355
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Microwave characteristics of hetero-junction impatt diodes based on SiCBuniatyan, V. V. / Aroutiounian, V. M. / Soukiassian, P. G. / Zekentes, K. / Buniatyan, Vaz. V. et al. | 2006
- 359
-
Bilayer electrode composition of TiO2 film for dye-sensitized solar cellMurayama, M. / Yamazaki, E. / Hashimoto, N. / Mori, T. et al. | 2006
- 365
-
Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templatesCordier, Y. / Lorenzini, P. / Hugues, M. / Semond, F. / Natali, F. / Bougrioua, Z. / Massies, J. / Frayssinet, E. / Beaumont, B. / Gibart, P. et al. | 2006
- 369
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Index| 2006
- III
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PrefaceGirardeaux, C. / Aufray, B. / Bernardini, J. / Dallaporta, H. / Le Lay, G. / Soukiassian, P. et al. | 2006
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ICFSI-10 - 10th International Conference on the Information of Semiconductor Interfaces| 2006