Metallurgical and electrical properties of chromium silicon interfaces (English)
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In:
Solid-State Electronics
;
23
, 1
;
55-64
;
1979
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Metallurgical and electrical properties of chromium silicon interfaces
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Contributors:Martinez, A. ( author ) / Esteve, D. ( author ) / Guivarc'h, A. ( author ) / Auvray, P. ( author ) / Henoc, P. ( author ) / Pelous, G. ( author )
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Published in:Solid-State Electronics ; 23, 1 ; 55-64
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Publisher:
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Publication date:1979-05-31
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Size:10 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 23, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Generalized theory and realization of a voltage-controlled negative resistance MOS device (lambda MOSFET)Wu, Ching-Yuan / Lai, Khun-Nan / Wu, Chung-Yu et al. | 1979
- 9
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Design considerations for planar Schottky barrier diodesKellner, W. / Enders, N. / Ristow, D. / Kniepkamp, H. et al. | 1979
- 17
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New types of metal-insulator-semiconductor switchAdán, Armando / Dobos, Károly et al. | 1979
- 23
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A UHF MOS tetrode with polysilicon gateKlaassen, F.M. / Wilting, H.J. / de Groot, W.C.J. et al. | 1979
- 31
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Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopyEnglert, Th. / Abstreiter, G. / Pontcharra, J. et al. | 1979
- 35
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Velocity of surface carriers in inversion layers on siliconCoen, R.W. / Muller, R.S. et al. | 1978
- 41
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Recombination in the space-charge region of Schottky barrier solar cellsPanayotatos, P. / Card, H.C. et al. | 1979
- 49
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The Shockley-like equations for the carrier densities and the current flows in materials with a nonuniform compositionvan Vliet, Karel M. / Marshak, Alan H. et al. | 1979
- 55
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Metallurgical and electrical properties of chromium silicon interfacesMartinez, A. / Esteve, D. / Guivarc'h, A. / Auvray, P. / Henoc, P. / Pelous, G. et al. | 1979
- 65
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Interpretation of C-V measurements for determining the doping profile in semiconductorsBaccarani, G. / Rudan, M. / Spadini, G. / Maes, H. / Vandervorst, W. / Van Overstraeten, R. et al. | 1979
- 73
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Charge neutrality and the internal electric field produced by impurity diffusionShrivastava, Ritu / Marshak, Alan H. et al. | 1978
- 75
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Extensions of the Scharfetter-Gummel approach to charge transferLavine, J.P. / Burkey, B.C. et al. | 1979
- 79
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Optically active interface states in MOS structuresKamieniecki, E. / Nitecki, R. / Światek, A. et al. | 1979
- 87
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Analytical expressions for tunnel currents in metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures in a two-band modelHabib, S.E.D. / Simmons, J.G. et al. | 1978
- 93
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Radiation induced traps of zinc phosphate and phosphideMurali, K.R. / Rao, D.R. et al. | 1978
- 99
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Characteristics of metal-semiconductor diodes made by a chemical reduction processDatta, A.K. / Ghosh, K. / Mitra, R.N. / Daw, A.N. et al. | 1979
- IFC
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Editorial Board| 1980