Czochralski crystal growth and aluminum segregation coefficient in yttrium gallium aluminum garnet (English)
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In:
Journal of Crystal Growth
;
71
, 2
;
371-376
;
1984
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Czochralski crystal growth and aluminum segregation coefficient in yttrium gallium aluminum garnet
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Contributors:
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Published in:Journal of Crystal Growth ; 71, 2 ; 371-376
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Publisher:
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Publication date:1984-11-27
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Size:6 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 71, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 283
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Bridgman growth of subgrain boundary free Pb1−xSnxTe single crystalsKinoshita, Kyoichi / Sugii, Kiyomasa et al. | 1985
- 289
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Crystal growth from the system ThO2-PbO-V2O5Andreetti, G.D. / Calestani, G. / Montenero, A. / Bettinelli, M. et al. | 1985
- 295
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On control of the crystal-melt interface shape during growth in a vertical bridgman configurationJasinski, T. / Witt, A.F. et al. | 1985
- 305
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Valley traces in semiconductor crystalsLu, Y.C. / Bauser, E. et al. | 1984
- 317
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Selective liquid phase epitaxy of AlGaInSb on GaSb substratesLendvay, E. / Petrás, L. / Gevorkyan, V.A. et al. | 1984
- 326
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Kinetic segregation of AlAs-GaAs during 〈110〉 MBEVan Vechten, J.A. et al. | 1984
- 333
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Phase equilibria in the system Nd 2 O 3−P 2 O 5−H 2 O and growth of NdP 5 O 14 single crystals under hydrothermal conditionsYoshimura, Masahiro / Fujii, Kazutaka / Sōmiya, Shigeyuki et al. | 1984
- 340
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Observations of a monotectic solidification interface morphologyKaukler, William F. / Frazier, Donald O. et al. | 1985
- 346
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Origin of polytype structures in CdI2: Application of faulted matrix model revisitedPandey, Dhananjai et al. | 1984
- 353
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Chemistry of eutectic and monotectic; phenanthrene-succinonitrile systemSingh, N.B. / Rai, U.S. / Singh, O.P. et al. | 1985
- 361
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Preparation of CdTe thin films on Ge substrates by molecular beam epitaxyMatsumura, Nobuo / Ohshima, Takefumi / Saraie, Junji / Yodogawa, Yutaka et al. | 1984
- 371
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Czochralski crystal growth and aluminum segregation coefficient in yttrium gallium aluminum garnetDabkowski, A. / Berkowski, M. / Jasiołek, G. et al. | 1984
- 377
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OMVPE growth of gallium indium phosphide on the {100} gallium arsenide using adduct compoundsMinagawa, Shigekazu / Nakamura, Hitoshi / Sano, Hisumi et al. | 1985
- 385
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Instability in radiatively melted silicon filmsJackson, K.A. / Kurtze, Douglas A. et al. | 1984
- 391
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Quartz ampoule effects on the quench rates of Hg0.8Cd0.2Te grown by the solid state recrystallization techniqueBotha, C.J. / Basson, J.H. / Muller, R.J. / Booyens, H. et al. | 1984
- 395
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The Czochralski growth of BaLaGa3O7 single crystalsPiekarczyk, W. / Berkowski, M. / Jasiołek, G. et al. | 1985
- 399
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Simulation of temperature distribution in crystals grown by Czochralski methodRamachandran, P.A. / Duduković, M.P. et al. | 1985
- 409
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Bi and Pb segregation in Bi-substituted yig systemsNevřiva, M. / Novák, R. / Čermák, J. et al. | 1984
- 415
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Growth and characterization of layer compounds in the series WSx Se2-xAgarwal, M.K. / Vashi, M.N. / Jani, A.R. et al. | 1985
- 421
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Thermal effects on LPE layer thicknessTamargo, M.C. / Reynolds, C.L. Jr. / Kunkel, R.I. et al. | 1984
- 427
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Whisker growth by means of cellulose acetate membranes: NaCl and KClYellin, N. / Zelingher, N. / Ben-Dor, L. et al. | 1985
- 433
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Thermodynamic calculations in CVD growth of GaAs compoundsChatillon, Christian / Bernard, Claude et al. | 1984
- 450
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Vapor phase epitaxy of GaAs by the pulsed introduction of H2Koukitu, Akinori / Suzuki, Takeyuki / Seki, Hisashi et al. | 1985
- 453
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Isothermal growth of homogeneous Hg1−x−yCdxMnyTe crystalsPiotrowski, T. et al. | 1985
- 456
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News, reports and announcements| 1985