Subcellular imaging of freeze-fractured cell cultures by TOF-SIMS and Laser-SNMS (English)
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In:
Applied Surface Science
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203-204
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726-729
;
2002
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Subcellular imaging of freeze-fractured cell cultures by TOF-SIMS and Laser-SNMS
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Contributors:Fartmann, M. ( author ) / Dambach, S. ( author ) / Kriegeskotte, C. ( author ) / Lipinsky, D. ( author ) / Wiesmann, H.P. ( author ) / Wittig, A. ( author ) / Sauerwein, W. ( author ) / Arlinghaus, H.F. ( author )
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Published in:Applied Surface Science ; 203-204 ; 726-729
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Publisher:
- New search for: Elsevier Science B.V.
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Publication date:2002-01-01
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Size:4 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 203-204
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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ForewordBenninghoven, A et al. | 2002
- 3
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PrefaceNihei, Yoshimasa et al. | 2002
- 5
-
Depth profiling using ultra-low-energy secondary ion mass spectrometryDowsett, M.G. et al. | 2002
- 13
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Prospects for imaging TOF-SIMS: from fundamentals to biotechnologyWinograd, N. et al. | 2002
- 20
-
Apparent and real transient effects in SIMS depth profiling using oxygen bombardmentWittmaack, K. et al. | 2002
- 27
-
The dose dependence of Si sputtering with low energy ions in shallow depth profilingMoon, D.W. / Lee, H.I. et al. | 2002
- 30
-
On the correlation between Si+ yields and surface oxygen concentration using in situ SIMS-LEISJanssens, T / Huyghebaert, C / Vandervorst, W / Gildenpfennig, A / Brongersma, H.H et al. | 2002
- 35
-
Oxygen-ion-induced ripple formation on silicon: evidence for phase separation and tentative modelHomma, Y. / Takano, A. / Higashi, Y. et al. | 2002
- 39
-
Doubly versus singly positively charged oxygen ions back-scattered from a silicon surface under dynamic O2+ bombardmentFranzreb, Klaus / Williams, Peter / Lörinčı́k, Jan / Šroubek, Zdeněk et al. | 2002
- 43
-
Surface roughening of silicon under ultra-low-energy cesium bombardmentKataoka, Y. / Yamazaki, K. / Shigeno, M. / Tada, Y. / Wittmaack, K. et al. | 2002
- 48
-
Ionization probability of atoms and molecules sputtered from a cesium covered silver surfaceMeyer, S. / Staudt, C. / Wucher, A. et al. | 2002
- 52
-
Quantitative depth profiling at silicon/silicon oxide interfaces by means of Cs+ sputtering in negative mode by ToF-SIMS: a full spectrum approachFerrari, S. / Perego, M. / Fanciulli, M. et al. | 2002
- 56
-
Transient sputter yields, build-up of the altered layer and Ge-segregation as a function of the O2+ ion-fluence in SiGeHuyghebaert, C. / Brijs, B. / Janssens, T. / Vandervorst, W. et al. | 2002
- 62
-
Simulation of oxide sputtering and SIMS depth profiling of delta-doped layerYamamura, Y. / Ishida, M. et al. | 2002
- 69
-
Big molecule ejection—SIMS vs. MALDIGarrison, B.J. / Delcorte, A. / Zhigilei, L.V. / Itina, T.E. / Krantzman, K.D. / Yingling, Y.G. / McQuaw, C.M. / Smiley, E.J. / Winograd, N. et al. | 2002
- 72
-
Investigation of the depth range through ultra-thin carbon films on magnetic layers by time-of-flight secondary ion mass spectrometryTadokoro, N / Yuki, M / Osakabe, K et al. | 2002
- 78
-
Ionization probability of sputtered cluster anions: Cn− and Sin−Gnaser, Hubert et al. | 2002
- 82
-
Dynamic behavior of sputtering of implanted projectiles and target atoms under high fluence gallium ion bombardmentOhya, K. et al. | 2002
- 86
-
Electron transfer in ion interactions with chlorine covered silver surfacesStaicu-Casagrande, E.M. / Guillemot, L. / Lacombe, S. / Esaulov, V.A. et al. | 2002
- 90
-
Towards a model for the formation of positive Si+ ionsJanssens, T. / Huyghebaert, C. / Vandervorst, W. et al. | 2002
- 94
-
Work function change caused by alkali ion sputteringVillegas, A. / Kudriavtsev, Yu. / Godines, A. / Asomoza, R. et al. | 2002
- 98
-
Mass-resolved low-energy back-scattering of alkali ionsFranzreb, Klaus / Williams, Peter et al. | 2002
- 102
-
Mechanism of metal cationization in organic SIMSWojciechowski, I / Delcorte, A / Gonze, X / Bertrand, P et al. | 2002
- 106
-
The formation of singly and doubly cationized oligomers in SIMSDelcorte, A. / Wojciechowski, I. / Gonze, X. / Garrison, B.J. / Bertrand, P. et al. | 2002
- 110
-
Nanocrystals depth profiling by means of Cs+ in negative polarity with dual beam ToF-SIMSPerego, M. / Ferrari, S. / Spiga, S. / Fanciulli, M. et al. | 2002
- 114
-
Investigation of the cluster ion formation process for inorganic compounds in static SIMSAubriet, Frédéric / Poleunis, Claude / Bertrand, Patrick et al. | 2002
- 118
-
The unimolecular decay of Aln± and Sin± sputtered clustersDzhemilev, N.Kh. / Bekkerman, A.D. / Maksimov, S.E. / Tugushev, V.I. et al. | 2002
- 122
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Features of non-additive sputtering for various “molecular projectile–solid” systemsBelykh, S.F. / Kovarsky, A.P. / Palitsin, V.V. / Adriaens, A. / Adams, F. et al. | 2002
- 126
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Effect of the projectile parameters on the charge state formation process in solid sputteringBelykh, S.F. / Palitsin, V.V. / Adriaens, A. / Adams, F. et al. | 2002
- 130
-
The energy spectra of secondary ions sputtered from Si and SiGe by ultra-low-energy primary ionsBellingham, J. / Dowsett, M.G. et al. | 2002
- 134
-
Ionization probability changes of the Si+ ions during the transient for 3 keV O2+ bombardment of SiHuyghebaert, C. / Janssens, T. / Brijs, B. / Vandervorst, W. et al. | 2002
- 139
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Simulation of SiO2 build-up in silicon under oxygen bombardmentGuzmán, B. / Serrano, J.J. / Blanco, J.M. / Aguilar, M. / Ameziane, O. et al. | 2002
- 143
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MD simulation of cluster ejection due to sputtering by polyatomic projectilesMuramoto, T / Yamamura, Y et al. | 2002
- 148
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Enhancement of cluster yield under gold dimer oblique bombardment of the silicon surfaceMedvedeva, M. / Wojciechowski, I. / Garrison, B.J. et al. | 2002
- 152
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Observation of ripple formation on O2+-irradiated GaN surfaces using atomic force microscopyKanazawa, M. / Takano, A. / Higashi, Y. / Suzuki, M. / Homma, Y. et al. | 2002
- 156
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Transient effects induced through ripple topography growth during Cs+ depth profile analysis of Si at high incidence anglesvan der Heide, P.A.W. / Lim, M.S. / Perry, S.S. / Bennett, J. et al. | 2002
- 160
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Molecular SIMS for organic layers: new insightsBertrand, P. / Delcorte, A. / Garrison, B.J. et al. | 2002
- 166
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A microscopic view of organic sample sputteringDelcorte, A. / Bertrand, P. / Garrison, B.J. et al. | 2002
- 170
-
Ion-to-neutral conversion in time-of-flight secondary ion mass spectrometrySzymczak, W. / Wittmaack, K. et al. | 2002
- 175
-
ToF-SIMS characterization of molecular ions from Fomblin Z-DOL on Ag substratesAbe, Yoshimi / Okuhira, Hidekazu et al. | 2002
- 180
-
Effects of sample preparation on ion yield in the study of inorganic salts by s-SIMSAubriet, Frédéric / Poleunis, Claude / Bertrand, Patrick et al. | 2002
- 184
-
Determination of nitrogen in silicon carbide by secondary ion mass spectrometryYa Ber, B / Kazantsev, D.Yu / Kovarsky, A.P / Yafaev, R.R et al. | 2002
- 189
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Cation Mass Spectrometer: towards an optimisation of MCsx+ cluster analysisWirtz, T / Migeon, H.-N / Scherrer, H et al. | 2002
- 194
-
Nanoscale SIMS analysis: the next generation in local analysisNojima, M / Tomiyasu, B / Kanda, Y / Owari, M / Nihei, Y et al. | 2002
- 198
-
Prospects for imaging with TOF-SIMS using gold liquid metal ion sourcesWalker, Amy V. / Winograd, Nicholas et al. | 2002
- 201
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Rapid screening of molecular arrays using imaging TOF-SIMSXu, J.Y. / Braun, R.M. / Winograd, N. et al. | 2002
- 205
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Development of a chemically assisted micro-beam etching system for three-dimensional microanalysisTanaka, Y / Karashima, M / Takanashi, K / Sakamoto, T / Owari, M / Nihei, Y et al. | 2002
- 209
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Secondary ion mass spectrometry using cluster primary ion beamsGillen, Greg / Fahey, Albert et al. | 2002
- 214
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Secondary ion mass spectrometry with gas cluster ion beamsToyoda, Noriaki / Matsuo, Jiro / Aoki, Takaaki / Yamada, Isao / Fenner, David B. et al. | 2002
- 219
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Development of a C60+ ion gun for static SIMS and chemical imagingWong, S.C.C. / Hill, R. / Blenkinsopp, P. / Lockyer, N.P. / Weibel, D.E. / Vickerman, J.C. et al. | 2002
- 223
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Development and experimental application of a gold liquid metal ion sourceDavies, N. / Weibel, D.E. / Blenkinsopp, P. / Lockyer, N. / Hill, R. / Vickerman, J.C. et al. | 2002
- 228
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A resonance photoionization sputtered neutral mass spectrometry instrument for submicron microarea analysis of ULSI devicesShichi, H. / Osabe, S. / Sugaya, M. / Ino, T. / Kakibayashi, H. / Kanehori, K. / Mitsui, Y. et al. | 2002
- 235
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Trace element analysis of precious metals in minerals by time-of-flight resonance ionization mass spectrometryDimov, S.S. / Chryssoulis, S.L. et al. | 2002
- 238
-
Nonresonant Laser–SNMS and TOF–SIMS analysis of sub-μm structuresKollmer, F. / Bourdos, N. / Kamischke, R. / Benninghoven, A. et al. | 2002
- 238
-
Nonresonant Laser-SNMS and TOF-SIMS analysis of sub-my m structuresKollmer, F. / Bourdos, N. / Kamischke, R. / Benninghoven, A. et al. | 2002
- 238
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Nonresonant Laser-SNMS and TOF-SIMS analysis of sub-mm structuresKollmer, F. / Bourdos, N. / Kamischke, R. / Benninghoven, A. et al. | 2003
- 244
-
Estimation of useful yield in surface analysis using single photon ionisationKing, B.V / Pellin, M.J / Moore, J.F / Veryovkin, I.V / Savina, M.R / Tripa, C.E et al. | 2002
- 248
-
Energy distributions and excitation probability of nickel atoms sputtered from Ni3Al, NiAl and NiTan, M / King, B.V et al. | 2002
- 252
-
Steady-state surface concentration profiles of primary ion species during secondary ion mass spectrometry measurementsYoshikawa, S. / Morita, H. / Toujou, F. / Matsunaga, T. / Tsukamoto, K. et al. | 2002
- 256
-
Surface roughening effect in sub-keV SIMS depth profilingLiu, R. / Ng, C.M. / Wee, A.T.S. et al. | 2002
- 260
-
Correction for the loss of depth resolution with accurate depth calibration when profiling with Cs+ at angles of incidence above 50degree to normalKelly, J. H. / Dowsett, M. G. / Augustus, P. / Beanland, R. et al. | 2003
- 260
-
Correction for the loss of depth resolution with accurate depth calibration when profiling with Cs+ at angles of incidence above 50° to normalKelly, J.H. / Dowsett, M.G. / Augustus, P. / Beanland, R. et al. | 2002
- 264
-
Accurate SIMS depth profiling for ultra-shallow implants using backside SIMSHongo, C. / Tomita, M. / Takenaka, M. / Murakoshi, A. et al. | 2002
- 268
-
Detailed evaluation of the analytical resolution functionWittmaack, K. et al. | 2002
- 273
-
On determining accurate positions, separations, and internal profiles for delta layersDowsett, M.G. / Kelly, J.H. / Rowlands, G. / Ormsby, T.J. / Guzmán, B. / Augustus, P. / Beanland, R. et al. | 2002
- 277
-
Low energy dual beam depth profiling: influence of sputter and analysis beam parameters on profile performance using TOF-SIMSGrehl, T. / Möllers, R. / Niehuis, E. et al. | 2002
- 281
-
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitridesBersani, M / Giubertoni, D / Barozzi, M / EIacob, E / Vanzetti, L / Anderle, M / Lazzeri, P / Crivelli, B / Zanderigo, F et al. | 2002
- 285
-
Transient processes and structural transformations in SixGe1−x layers during oxygen implantation and sputteringKrüger, D / Efremov, A.A / Murota, J / Tillack, B / Kurps, R / Romanova, G.Ph et al. | 2002
- 290
-
Metal implant standards for surface analysis by TOF-SIMS and dynamic SIMS: comparison with TRIM simulationLi-Fatou, A.V. / Douglas, M. et al. | 2002
- 294
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Evaluation of SIMS depth resolution using delta-doped multilayers and mixing–roughness-information depth modelTakano, A. / Homma, Y. / Higashi, Y. / Takenaka, H. / Hayashi, S. / Goto, K. / Inoue, M. / Shimizu, R. et al. | 2002
- 298
-
SIMS study of depth profiles of delta-doped boron/silicon alternating layers by low-energy ion beamsHayashi, S. / Takano, A. / Takenaka, H. / Homma, Y. et al. | 2002
- 302
-
Multiple As delta layered Si thin films for SIMS quantification and depth scale calibrationCho, S.B / Shon, H.K / Kang, H.J / Hong, T.E / Kim, H.K / Lee, H.I / Kim, K.J / Moon, D.W et al. | 2002
- 306
-
Transient effects noted during Cs+ depth profile analysis of Si at high incidence anglesvan der Heide, P.A.W. / Bennett, J. et al. | 2002
- 310
-
Using SIMS and the NIST standard reference material #2137 to calibrate standards used in the nuclear reaction analysis of B in SiMagee, Charles W. / Jacobson, Dale C. et al. | 2002
- 310
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Using SIMS and the NIST standard reference material #2137 to calibrate standards used in the 11B(p,a)8Be nuclear reaction analysis of B in SiMagee, C. W. / Jacobson, D. C. et al. | 2003
- 314
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The features of using of BO2− secondary ions for SIMS depth profiling of shallow boron implantation in siliconSimakin, S.G. / Smirnov, V.K. et al. | 2002
- 318
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Six months repeatability of D-SIMS depth profile using an ultra-low-energy probeLi, Zhanping / Hoshi, Takahiro / Oiwa, Retsu et al. | 2002
- 323
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Characteristics of ultra-low-energy Cs+ ion beam bombardmentsLi, Zhanping / Hoshi, Takahiro / Oiwa, Retsu et al. | 2002
- 329
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Surprisingly large apparent profile shifts of As and Sb markers in Si bombarded with ultra-low-energy Cs ion beamsKataoka, Y / Shigeno, M / Tada, Y / Wittmaack, K et al. | 2002
- 335
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SIMS backside depth profiling of ultra shallow implantsYeo, K.L. / Wee, A.T.S. / See, A. / Liu, R. / Ng, C.M. et al. | 2002
- 339
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Dual ion beam analysis of boron implanted SiO2/silicon interfaceHayashi, S. / Yanagihara, K. et al. | 2002
- 343
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A floating low energy electron gun (FLEG) for charge compensation in SIMS and other applicationsGibbons, R. / Dowsett, M.G. / Kelly, J. / Blenkinsopp, P. / Hill, R. / Richards, D. / Loibl, N. et al. | 2002
- 348
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Comparison between Xe+ and O2+ primary ions, at low impact energy, on B delta-doping, SiGe–Si superlattice and Al/Ti multilayer structuresLaugier, F / Holliger, P / Dupuy, J.C / Baboux, N et al. | 2002
- 354
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B4C/Mo/Si and Ta2O5/Ta nanostructures analysed by ultra-low energy argon ion beamsKonarski, P. / Mierzejewska, A. et al. | 2002
- 359
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SIMS depth profiling of N and In in a ZnO single crystalPark, Dae-Chul / Sakaguchi, Isao / Ohashi, Naoki / Hishita, Shunichi / Haneda, Hajime et al. | 2002
- 363
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Determination of the variation in sputter yield in the SIMS transient region using MEISDowsett, M.G. / Ormsby, T.J. / Gard, F.S. / Al-Harthi, S.H. / Guzmán, B. / McConville, C.F. / Noakes, T.C.Q. / Bailey, P. et al. | 2002
- 367
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Investigating oxygen flooding at oblique 2 and 1 keV oxygen sputtering for microelectronics support applicationsJahnel, F. / von Criegern, R. et al. | 2002
- 371
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An (un)solvable problem in SIMS: B-interfacial profilingVandervorst, W. / Janssens, T. / Loo, R. / Caymax, M. / Peytier, I. / Lindsay, R. / Frühauf, J. / Bergmaier, A. / Dollinger, G. et al. | 2002
- 377
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Estimation of ultra-shallow implants using SIMS, NRA and chemical analysisTomita, M / Suzuki, M / Tachibe, T / Kozuka, S / Murakoshi, A et al. | 2002
- 383
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LEXES and SIMS as complementary techniques for full quantitative characterization of nanometer structuresHombourger, C. / Staub, P.F. / Schuhmacher, M. / Desse, F. / de Chambost, E. / Hitzman, C. et al. | 2002
- 387
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Copper drift in low dielectric constant insulator films caused by O2+ primary ion beamShibahara, K / Onimatsu, D / Ishikawa, Y / Oda, T / Kikkawa, T et al. | 2002
- 391
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Depth scale calibration of SIMS depth profiles by means of an online crater depth measurement techniqueDe Chambost, E. / Monsallut, P. / Rasser, B. / Schuhmacher, M. et al. | 2002
- 396
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Extremely deep SIMS profiling: oxygen in FZ siliconBarcz, A. / Zielinski, M. / Nossarzewska, E. / Lindstroem, G. et al. | 2002
- 400
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TOF-SIMS as a rapid diagnostic tool to monitor the growth mode of thin (high k) filmsConard, T. / Vandervorst, W. / Petry, J. / Zhao, C. / Besling, W. / Nohira, H. / Richard, O. et al. | 2002
- 404
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Application of SIMS in microelectronicsTsukamoto, K. / Yoshikawa, S. / Toujou, F. / Morita, H. et al. | 2002
- 409
-
SIMS depth profiling of advanced gate dielectric materialsBennett, J. / Gondran, C. / Sparks, C. / Hung, P.Y. / Hou, A. et al. | 2002
- 414
-
Quantitative depth profiling of SiOxNy layers on Sivan Berkum, J.G.M. / Hopstaken, M.J.P. / Snijders, J.H.M. / Tamminga, Y. / Cubaynes, F.N. et al. | 2002
- 418
-
SIMS and high-resolution RBS analysis of ultrathin SiOxNy filmsKimura, K. / Nakajima, K. / Kobayashi, H. / Miwa, S. / Satori, K. et al. | 2002
- 423
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Quantitative depth profiling of nitrogen in ultrathin oxynitride film with low energy SIMSShon, H.K. / Kang, H.J. / Hong, T.E. / Chang, H.S. / Kim, K.J. / Kim, H.K. / Moon, D.W. et al. | 2002
- 427
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Solubility limits of dopants in 4H–SiCLinnarsson, M.K. / Zimmermann, U. / Wong-Leung, J. / Schöner, A. / Janson, M.S. / Jagadish, C. / Svensson, B.G. et al. | 2002
- 433
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Adventures in molecular electronics: how to attach wires to moleculesHaynie, B.C. / Walker, A.V. / Tighe, T.B. / Allara, D.L. / Winograd, N. et al. | 2002
- 437
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Gate oxide properties investigated by TOF-SIMS profiles on CMOS devicesZanderigo, F. / Brazzelli, D. / Rocca, S. / Pregnolato, A. / Grossi, A. / Queirolo, G. et al. | 2002
- 441
-
TOF-SIMS depth profiling of SIMONXin, Ge / Dong, Gui / Xu, Chen / Liangzhen, Cha / Brox, O. / Benninghoven, A. et al. | 2002
- 445
-
TOF-SIMS study of adhesive residuals on device contact pads after wafer taping and backgrindingLazzeri, P. / Franco, G. / Garozzo, M. / Gerardi, C. / Iacob, E. / Lo Faro, A. / Privitera, A. / Vanzetti, L. / Bersani, M. et al. | 2002
- 449
-
TOF-SIMS measurement of ultra-thin SiO2 films prepared by the graded-etching methodShibamori, T. / Muraji, Y. / Man, N. / Karen, A. et al. | 2002
- 453
-
SIMS analysis of insulating multilayer including silicon nitrideUeki, Y. / Kawashima, T. / Ishiwata, O. et al. | 2002
- 457
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SIMS quantification of low concentration of nitrogen doped in silicon crystalsFujiyama, N. / Karen, A. / Sams, D.B. / Hockett, R.S. / Shingu, K. / Inoue, N. et al. | 2002
- 461
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Round robin study of chlorine, sulfur and carbon in copper films from Taiwan SIMS usersChen, C.Y. / Ling, Y.C. / Hwang, J.F. / Lee, J.H. / Wen, M.L. / Hwang, M.C. / Lin, G.C. / Deng, R.C. et al. | 2002
- 465
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SIMS round-robin study of depth profiling of arsenic implants in siliconTomita, M. / Hasegawa, T. / Hashimoto, S. / Hayashi, S. / Homma, Y. / Kakehashi, S. / Kazama, Y. / Koezuka, K. / Kuroki, H. / Kusama, K. et al. | 2002
- 470
-
Evaluation of the Cu-CMP process by TOF-SIMS and XPS: time dependence of Cu surface adsorbents and oxidation statesNishi, A. / Sado, M. / Miki, T. / Fukui, Y. et al. | 2002
- 473
-
Surface chemical state analysis of electroplated Cu film under Cu-CMP process by means of TOF–SIMSMiyoshi, H. / Saito, R. / Kudo, M. et al. | 2002
- 478
-
SIMS analysis of hydrogen diffusion and trapping in CVD polycrystalline diamondJomard, F. / Ballutaud, D. et al. | 2002
- 482
-
Secondary ion mass spectrometry analysis of In-doped p-type GaN filmsChiou, C.Y. / Wang, C.C. / Ling, Y.C. / Chiang, C.I. et al. | 2002
- 486
-
SIMS depth profiling of InGaAsN/InAlAs quantum wells on InPMaier, M. / Serries, D. / Geppert, T. / Köhler, K. / Güllich, H. / Herres, N. et al. | 2002
- 490
-
The effect of Se and Zn pre-deposition on thermal diffusion of elements across the ZnSe/GaAs interface studied by SIMSGard, F.S. / Riley, J.D. / Dowsett, M.G. / Prince, K. et al. | 2002
- 495
-
A correlation of TOF-SIMS and TXRF for the analysis of trace metal contamination on silicon and gallium arsenideMowat, Ian / Lindley, Pat / McCaig, Lori et al. | 2002
- 500
-
Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resistive Si1−xGex alloy layersDowsett, M.G. / Morris, R. / Chou, Pei-Fen / Corcoran, S.F. / Kheyrandish, H. / Cooke, G.A. / Maul, J.L. / Patel, S.B. et al. | 2002
- 504
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SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using implantationHayashi, S. / Sasaki, T. / Kawamura, K. / Matsumura, A. / Yanagihara, K. / Tanaka, K. et al. | 2002
- 508
-
Characterization of ion-induced sodium migration in various kinds of silicon oxide filmsSaito, R. / Nagatomo, M. / Makino, N. / Hayashi, S. / Kudo, M. et al. | 2002
- 512
-
SIMS depth profile of copper in low-k dielectrics under electron irradiation for charge compensationYamada, K. / Fujiyama, N. / Sameshima, J. / Kamoto, R. / Karen, A. et al. | 2002
- 516
-
Characterization of high-k gate dielectric films using SIMSYamamoto, T. / Morita, N. / Sugiyama, N. / Karen, A. / Okuno, K. et al. | 2002
- 520
-
Direct determination of p/n junction depth by the emission of matrix complex ionsAlexandrov, O.V. / Kazantsev, D.Yu. / Kovarsky, A.P. et al. | 2002
- 523
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Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacksDe Witte, H. / Conard, T. / Vandervorst, W. / Gijbels, R. et al. | 2002
- 527
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Imaging by time-of-flight secondary ion mass spectrometry of plasma patterned metal and oxide thin filmsCoullerez, G. / Baborowski, J. / Viornery, C. / Chevolot, Y. / Xanthopoulos, N. / Ledermann, N. / Muralt, P. / Setter, N. / Mathieu, H.J. et al. | 2002
- 532
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ToF-SIMS quantitative approaches in copolymers and polymer blendsWeng, L.T. / Chan, C.-M. et al. | 2002
- 538
-
Analysis of surface composition of isotopic polymer blend based on time-of-flight secondary ion mass spectroscopyTakahara, A. / Kawaguchi, D. / Tanaka, K. / Tozu, M. / Hoshi, T. / Kajiyama, T. et al. | 2002
- 541
-
TOF-SIMS characterization of industrial materials: from silicon wafer to polymerKaren, Akiya / Man, Naoki / Shibamori, Takahiro / Takahashi, Kumiko et al. | 2002
- 547
-
Characterization of polymer solar cells by TOF-SIMS depth profilingBulle-Lieuwma, C.W.T. / van Gennip, W.J.H. / van Duren, J.K.J. / Jonkheijm, P. / Janssen, R.A.J. / Niemantsverdriet, J.W. et al. | 2002
- 551
-
G-SIMS of crystallisable organicsGilmore, I.S / Seah, M.P et al. | 2002
- 556
-
Surface evolution of polycarbonate/polyethylene terephthalate blends induced by thermal treatmentsLicciardello, A. / Auditore, A. / Samperi, F. / Puglisi, C. et al. | 2002
- 561
-
The influence of primary ion bombardment conditions on the secondary ion emission behavior of polymer additivesKersting, R. / Hagenhoff, B. / Pijpers, P. / Verlaek, R. et al. | 2002
- 566
-
Quantitative analysis of styrene butadiene copolymers using S-SIMS and LA-FTICRMSRuch, D. / Boes, C. / Zimmer, R. / Muller, J.F. / Migeon, H.-N. et al. | 2002
- 571
-
Antioxidant segregation and crystallisation at polyester surfaces studied by ToF-SIMSMédard, N. / Benninghoven, A. / Rading, D. / Licciardello, A. / Auditore, A. / Duc, Tran Minh / Montigaud, H. / Vernerey, F. / Poleunis, C. / Bertrand, P. et al. | 2002
- 575
-
Time-of-flight-SIMS and XPS characterization of metal doped polymersGross, Th. / Retzko, I. / Friedrich, J. / Unger, W. et al. | 2002
- 580
-
TOF-SIMS study of organosilane adsorption on model hydroxyl terminated surfacesHoussiau, L. / Bertrand, P. et al. | 2002
- 586
-
TOF-SIMS study on the adsorption behavior of mixtures of a phosphite and a friction modifier onto ferrous materialMurase, A. / Ohmori, T. et al. | 2002
- 590
-
Characterization of lubricants for fluid dynamic bearing by TOF-SIMSToujou, F / Tsukamoto, K / Matsuoka, K et al. | 2002
- 596
-
Tribological characterisation of an organic coating by the use of ToF-SIMSBexell, U / Carlsson, P / Olsson, M et al. | 2002
- 600
-
Investigating the difficulty of eliminating flood gun damage in TOF-SIMSGilmore, I.S / Seah, M.P et al. | 2002
- 605
-
Characterization of methyl methacrylate oligomers using secondary ion mass spectrometry, APCI mass spectrometry and molecular orbital theoryTakeuchi, T. / Iwai, K. / Momoji, K. / Miyamoto, I. / Saiki, K. / Hashimoto, K. et al. | 2002
- 609
-
Elemental distribution analysis of positive electrode material for a nickel metal hydride batteryTakanashi, K. / Yoshida, M. / Sakamoto, T. / Ono, N. / Tanaka, Y. / Owari, M. / Nihei, Y. et al. | 2002
- 614
-
Imaging TOF-SIMS for the surface analysis of silver halide microcrystalsLenaerts, J. / Gijbels, R. / Van Vaeck, L. / Verlinden, G. / Geuens, I. et al. | 2002
- 620
-
Insights into ToF-SIMS analysis of dendritic macromolecules: cationization and PCA to probe their molecular weight on surfacesCoullerez, G / Lundmark, S / Malkoch, M / Magnusson, H / Malmström, E / Hult, A / Mathieu, H.J et al. | 2002
- 625
-
A study of defect structures in oxide materials by secondary ion mass spectrometryHaneda, Hajime et al. | 2002
- 630
-
Use of isotopic tracers and SIMS analysis for evaluating the oxidation behaviour of protective coatings on nickel based superalloysAlibhai, A.A. / Chater, R.J. / McPhail, D.S. / Shollock, B.A. et al. | 2002
- 634
-
Determination of proton and oxygen movements in solid oxides by the tracer gases exchange technique and secondary ion mass spectrometryHorita, Teruhisa / Yamaji, Katsuhiko / Sakai, Natsuko / Xiong, Yueping / Kato, Tohru / Yokokawa, Harumi / Kawada, Tatsuya et al. | 2002
- 639
-
Measurement of oxygen grain boundary diffusion in mullite ceramics by SIMS depth profilingFielitz, P. / Borchardt, G. / Schmücker, M. / Schneider, H. / Willich, P. et al. | 2002
- 644
-
Speciation of surface gold in pressure oxidized carbonaceous gold ores by TOF-SIMS and TOF-LIMSDimov, S.S. / Chryssoulis, S.L. / Sodhi, R.N. et al. | 2002
- 648
-
ToF-SIMS imaging of dopant diffusion in optical fibersHellsing, M. / Fokine, M. / Claesson, Å. / Nilsson, L.-E. / Margulis, W. et al. | 2002
- 652
-
Light element distribution in ZnO thin film deposited by electron cyclotron resonance assisted chemical vapor depositionSakaguchi, Isao et al. | 2002
- 656
-
SIMS analysis of multi-diffusion profiles of lanthanides in stabilized zirconiasWeber, S. / Scherrer, S. / Scherrer, H. / Kilo, M. / Taylor, M.A. / Borchardt, G. et al. | 2002
- 660
-
Low energy SIMS characterisation of ultra thin oxides on ferrous alloysRees, E.E. / McPhail, D.S. / Ryan, M.P. / Kelly, J. / Dowsett, M.G. et al. | 2002
- 665
-
Hydrogen absorption of LaNi5 after LiOD treatment and surface characterization by TOF-SIMSIzawa, Chika / Uchida, Haru-Hisa / Okuhira, Hidekazu / Nishi, Yoshitake et al. | 2002
- 669
-
Chemical characterization of combustion deposits by TOF-SIMSSjövall, P / Lausmaa, J / Tullin, C / Högberg, J et al. | 2002
- 673
-
A new shielded SIMS instrument for analysis of highly radioactive materialsRasser, B. / Desgranges, L. / Pasquet, B. et al. | 2002
- 679
-
SIMS ion microscopy as a novel, practical tool for subcellular chemical imaging in cancer researchChandra, S. et al. | 2002
- 684
-
Fine structures and ion images on fresh frozen dried ultrathin sections by transmission electron and scanning ion microscopyTakaya, K. / Okabe, M. / Sawataishi, M. / Takashima, H. / Yoshida, T. et al. | 2002
- 689
-
Genome diagnostics with TOF-SIMSArlinghaus, H.F. / Ostrop, M. / Friedrichs, O. / Feldner, J.C. et al. | 2002
- 693
-
ToF–SIMS chemical mapping study of protein adsorption onto stainless steel surfaces immersed in saline aqueous solutionsPoleunis, C. / Rubio, C. / Compère, C. / Bertrand, P. et al. | 2002
- 698
-
Characterization of adsorbed protein films using time-of-flight-secondary ion mass spectrometry and multivariate analysisWagner, M.S. / Castner, David G. et al. | 2002
- 704
-
Quantitative time-of-flight secondary ion mass spectrometry for the characterization of multicomponent adsorbed protein filmsWagner, M.S. / Shen, M. / Horbett, T.A. / Castner, David G. et al. | 2002
- 710
-
Detection of chlorinated pesticides on the surface of fungus using ToF-SIMSCliff, B. / Weibel, D.E. / Lockyer, N.P. / Jungnickel, H. / Stephens, G. / Vickerman, J.C. et al. | 2002
- 714
-
Zinc detection in the islet of Langerhans by SIMSOkabe, M. / Yoshida, T. / Yoshii, R. / Sawataisi, M. / Takaya, K. et al. | 2002
- 718
-
Detection and quantification of benzodiazepines in hair by ToF-SIMS: preliminary resultsAudinot, J.-N. / Yegles, M. / Labarthe, A. / Ruch, D. / Wennig, R. / Migeon, H.-N. et al. | 2002
- 722
-
TOF-SIMS investigation of the immobilization process of peptide nucleic acidsFeldner, J.C. / Ostrop, M. / Friedrichs, O. / Sohn, S. / Lipinsky, D. / Gunst, U. / Arlinghaus, H.F. et al. | 2002
- 726
-
Subcellular imaging of freeze-fractured cell cultures by TOF-SIMS and Laser-SNMSFartmann, M. / Dambach, S. / Kriegeskotte, C. / Lipinsky, D. / Wiesmann, H.P. / Wittig, A. / Sauerwein, W. / Arlinghaus, H.F. et al. | 2002
- 730
-
Development of instrumentation for routine ToF-SIMS imaging analysis of biological materialCliff, B. / Lockyer, N.P. / Corlett, C. / Vickerman, J.C. et al. | 2002
- 734
-
Time-of-flight secondary ion mass spectrometry of fatty acids in rat retinaGong, H. / Amemiya, T. / Takaya, K. / Tozu, M. / Ohashi, Y. et al. | 2002
- 738
-
Changes of vitamins A and E in the rat retina under light and dark conditions detected with TOF-SIMSAmemiya, T. / Gong, H. / Takaya, K. / Tozu, M. / Ohashi, Y. et al. | 2002
- 742
-
Trace elements in lenses of normal Wistar Kyoto ratsKinoshita, Akio / Gong, Huaqing / Amemiya, Tsugio / Takaya, Kenichi / Tozu, Miyako / Ohashi, Yoshiharu et al. | 2002
- 745
-
Application of SIMS to the analysis of environmental samplesSeyama, Haruhiko et al. | 2002
- 751
-
Surface composition of atmospheric aerosol: individual particle characterization by TOF-SIMSPeterson, R.E / Tyler, B.J et al. | 2002
- 757
-
SIMS depth profiling of working environment nanoparticlesKonarski, P / Iwanejko, I / Mierzejewska, A et al. | 2002
- 762
-
Analysis of surface composition and internal structure of fly ash particles using an ion and electron multibeam microanalyzerSakamoto, T. / Shibata, K. / Takanashi, K. / Owari, M. / Nihei, Y. et al. | 2002
- 767
-
ToF-SIMS and XPS characterisation of urban aerosols for pollution studiesLazzeri, P. / Clauser, G. / Iacob, E. / Lui, A. / Tonidandel, G. / Anderle, M. et al. | 2002
- 772
-
Analysis of condensation dusts from the heavy oil combustion using TOF-SIMSOishi, S. / Shirahase, M. / Sado, M. / Oiwa, R. et al. | 2002
- 775
-
TOF-SIMS measurements for toxic air pollutants adsorbed on the surface of airborne particlesTomiyasu, Bunbunoshin / Hoshi, Takahiro / Owari, Masanori / Nihei, Yoshimasa et al. | 2002
- 779
-
SIMS depth profiling analysis of electrical arc residues in fire investigationChen, C.Y. / Ling, Y.C. / Wang, J.T. / Chen, H.Y. et al. | 2002
- 785
-
TOF-SIMS characterization of planktonic foraminiferaVering, G. / Crone, C. / Bijma, J. / Arlinghaus, H.F. et al. | 2002
- 789
-
Application of SIMS to silver tarnish at the British MuseumHallett, K. / Thickett, D. / McPhail, D.S. / Chater, R.J. et al. | 2002
- 793
-
High precision isotope micro-imaging of materialsYurimoto, Hisayoshi / Nagashima, Kazuhide / Kunihiro, Takuya et al. | 2002
- 798
-
Oxygen isotopic measurements on the Cameca Nanosims 50Slodzian, G. / Hillion, F. / Stadermann, F.J. / Horreard, F. et al. | 2002
- 802
-
Silicon isotope fractionation during FZ growth of silicon crystalsMorishita, Y. / Satoh, H. et al. | 2002
- 806
-
Application of high precision SIMS analyses to the early solar system chronologyKita, N.T. / Mostefaoui, S. / Liu, Y.Z. / Togashi, S. / Morishita, Y. et al. | 2002
- 810
-
In situ U–Pb dating and REE analyses of phosphates in extraterrestrial materialsTerada, K. / Sano, Y. et al. | 2002
- 814
-
Melt contribution to partitioning of trace element between plagioclase and basaltic magma of Fuji volcano, JapanTogashi, S. / Kita, N.T. / Tomiya, A. / Morishita, Y. / Imai, N. et al. | 2002
- 818
-
High resolution static SIMS imaging by time of flight SIMSHoshi, T. / Kudo, M. et al. | 2002
- 825
-
Interpretation of TOF-SIMS images: multivariate and univariate approaches to image de-noising, image segmentation and compound identificationTyler, B. et al. | 2002
- 832
-
Ion image enhancement using in-situ implantation of Cs+ and O2+ ionsSeki, S. / Tamura, H. / Saitoh, W. et al. | 2002
- 836
-
Failure analysis of liquid crystal display panel by time-of-flight secondary ion mass spectrometryMiyaki, S / Yoshida, A / Yamamoto, Y / Takeuchi, K et al. | 2002
- 842
-
Probing molecules on a surface by Cs+ reactive ion scattering: identification of C2Hx (x≤4) hydrocarbonsKang, H. / Lee, C.W. / Hwang, C.H. / Kim, C.M. et al. | 2002
- 842
-
Probing molecules on a surface by Cs+ reactive ion scattering: identification of C2Hx (x) hydrocarbonsKang, H. / Lee, C. W. / Hwang, C. H. / Kim, C. M. et al. | 2003
- 847
-
Surface metal standards produced by ion implantation through a removable layerSchueler, B.W / Granger, C.N / McCaig, L / McKinley, J.M / Metz, J / Mowat, I / Reich, D.F / Smith, S / Stevie, F.A / Yang, M.H et al. | 2002
- 851
-
Quantitative analysis of the top 5 nm of boron ultra-shallow implantsBellingham, J. / Dowsett, M.G. / Collart, E. / Kirkwood, D. et al. | 2002
- 855
-
Time-of-flight secondary ion mass spectrometry (TOF-SIMS) for high-throughput characterization of biosurfacesRoberson, S. / Sehgal, A. / Fahey, A. / Karim, A. et al. | 2002
- 859
-
Estimation of ToF-SIMS information depth in micro-corrosion analysisAbe, Yoshimi / Komatsu, Manabu / Okuhira, Hidekazu et al. | 2002
- 863
-
Chemical state analysis of ZnO/Ag film interface utilizing the matrix effectYamamoto, Y / Hayashi, Y / Tachibana, Y / Shimodaira, N / Kudo, M et al. | 2002
- 867
-
Oxidizing mechanism of beryllium–copper in alkaline solutionKuroki, H. / Kawarai, H. et al. | 2002
- 871
-
Spectral characterization of perfluoropolyethers lubricant irradiated by laser lightZhu, Lei / Liew, T. et al. | 2002
- 875
-
Structural characterization of various ionomers by time-of-flight secondary ion mass spectrometryLee, Yeonhee / Han, Seunghee / Kwon, Moon-Hee / Lim, Hyuneui / Kim, Young-Su / Chun, Hyejin / Kim, Joon-Seop et al. | 2002
- ii
-
Editorial board| 2002
- III
-
Author Index| 2002
- XVI
-
Subject Index| 2002