Scintillation properties of Sc-, Pr-, and Ce-doped LuAG epitaxial garnet films (English)
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In:
Journal of Crystal Growth
;
318
, 1
;
545-548
;
2010
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Scintillation properties of Sc-, Pr-, and Ce-doped LuAG epitaxial garnet films
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Contributors:Prusa, P. ( author ) / Kucera, M. ( author ) / Mares, J.A. ( author ) / Nikl, M. ( author ) / Nitsch, K. ( author ) / Hanus, M. ( author ) / Onderisinova, Z. ( author ) / Cechak, T. ( author )
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Published in:Journal of Crystal Growth ; 318, 1 ; 545-548
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Publisher:
- New search for: Elsevier B.V.
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Publication date:2010-01-01
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Size:4 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 318, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Chairpersons' prefaceKuech, Thomas F. et al. | 2011
- 3
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Editors' prefaceChen, Chuangtian / Kuech, Thomas F. / Nishinaga, Tatau / Zheng, Lili et al. | 2011
- 5
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Step bunching induced by flow in solutionSato, Masahide et al. | 2010
- 10
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Zipping process on the step bunching in the vicinal surface of the restricted solid-on-solid model with the step attraction of the point contact typeAkutsu, Noriko et al. | 2010
- 14
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Formation of finger-like step patterns on a Si(111) vicinal faceSato, Masahide / Kondo, Shinji / Uwaha, Makio et al. | 2010
- 18
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Morphological instability of heteroepitaxial growth on vicinal substrates: A phase-field crystal studyYu, Yan-Mei / Backofen, Rainer / Voigt, Axel et al. | 2010
- 23
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Morphological instability of interface, cell and dendrite during directional solidification under strong magnetic fieldLi, Xi / Fautrelle, Yves / Ren, Zhongming / Gagnoud, Annie / Zhang, Yudong / Esling, Claude et al. | 2010
- 28
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Global instability and selection of cellular array growth in solidificationXu, Jian-Jun / Chen, Yong-Qiang et al. | 2010
- 32
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Steady deep-cellular growth in solidificationChen, Yong-Qiang / Xu, Jian-Jun et al. | 2010
- 36
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Relation between growth and melt shapes of ice crystalsMaruyama, Minoru et al. | 2010
- 40
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GPU-accelerated phase-field simulation of dendritic solidification in a binary alloyYamanaka, Akinori / Aoki, Takayuki / Ogawa, Satoi / Takaki, Tomohiro et al. | 2010
- 46
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Adaptive phase field modeling of grain boundary diffusionYeh, S.Y. / Chen, C.C. / Lan, C.W. et al. | 2010
- 51
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Adaptive three-dimensional phase-field modeling of dendritic crystal growth with high anisotropyLin, H.K. / Chen, C.C. / Lan, C.W. et al. | 2010
- 55
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Position and spacing of sidebranches in binary systemLi, Xiang Ming / Wang, Zi Dong et al. | 2010
- 59
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The effect of structure on tensile properties of directionally solidified Zn-based alloysAres, A.E. / Schvezov, C.E. et al. | 2010
- 66
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Monte Carlo simulation of growth of hard-sphere crystals on a square patternMori, Atsushi et al. | 2010
- 72
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Ab initio-based approach to adsorption–desorption behavior on the InAs(111)A heteroepitaxially grown on GaAs substrateIto, Tomonori / Ishimure, Naoki / Akiyama, Toru / Nakamura, Kohji et al. | 2010
- 76
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Specific surface free energy and the morphology of synthesized ruby single crystalsSuzuki, Takaomi / Oda, Masayuki et al. | 2010
- 79
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Stability of hydrogen on nonpolar and semipolar nitride surfaces: Role of surface orientationAkiyama, Toru / Yamashita, Tomoki / Nakamura, Kohji / Ito, Tomonori et al. | 2010
- 84
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Variation in Si(100) surface roughness caused by H-termination during high-temperature Ar annealingAraki, Koji / Isogai, Hiromichi / Takeda, Ryuji / Izunome, Koji / Zhao, Xinwei et al. | 2010
- 89
-
Steady chirality conversion by grinding crystals—Supercritical and subcritical bifurcationsUwaha, Makio et al. | 2010
- 93
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Grinding-induced homochirality in crystal growthSaito, Yukio / Hyuga, Hiroyuki et al. | 2010
- 99
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Kinetics of mass crystallization of calcium carbonate at 25, 30 and 37°CRosa, Silvia / Lundager Madsen, Hans E. et al. | 2010
- 103
-
Recent developments in understanding of the metastable zone width of different solute−solvent systemsSangwal, K. et al. | 2010
- 110
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A unique growth mechanism of donut-shaped Mg–Al layered double hydroxides crystals revealed by AFM and STEM–EDXBudhysutanto, W.N. / Van Den Bruele, F.J. / Rossenaar, B.D. / Van Agterveld, D. / Van Enckevort, W.J.P. / Kramer, H.J.M et al. | 2010
- 117
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Crystal growth rates and secondary nucleation threshold for γ-dl-methionine in aqueous solutionWantha, Lek / Flood, Adrian E. et al. | 2010
- 122
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Growth kinetics of KH2PO4 crystals in relation to solution macrocompositionVorontsov, D.A. / Ershov, V.P. / Portnov, V.N. / Rodchenkov, V.I. / Sibirkin, A.A. et al. | 2010
- 125
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Dissolution kinetics at edge dislocation site of (111) surface of copper crystalsImashimizu, Y. et al. | 2010
- 131
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Foreign particle behavior at the growth interface of tetrahydrofuran clathrate hydratesSuzuki, Takahiro / Muraoka, Michihiro / Nagashima, Kazushige et al. | 2010
- 135
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Skeletal morphologies and crystallographic orientations of olivine, diopside and plagioclaseZhao, Shan-Rong / Liu, Rong / Wang, Qin-Yan / Xu, Hai-jun / Fang, Min et al. | 2010
- 141
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Theoretical investigations for the polytypism in semiconductorsIto, Tomonori / Kondo, Tomoyuki / Akiyama, Toru / Nakamura, Kohji et al. | 2010
- 145
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The effect of far-field uniform flow on the particle growth in an undercooled alloy meltChen, Ming-Wen / Jiang, Han / Wang, Yan-Lin / Wang, Qiang-Song / Wang, Zi-Dong et al. | 2010
- 150
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Flow modelling with relevance to vertical gradient freeze crystal growth under the influence of a travelling magnetic fieldNiemietz, K. / Galindo, V. / Pätzold, O. / Gerbeth, G. / Stelter, M. et al. | 2010
- 156
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On experimental and numerical prediction of instabilities in Czochralski melt flow configurationHaslavsky, V. / Miroshnichenko, E. / Kit, E. / Gelfgat, A.Yu. et al. | 2010
- 162
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Numerical simulation of heat and fluid flows for sapphire single crystal growth by the Kyropoulos methodChen, Chun-Hung / Chen, Jyh-Chen / Lu, Chung-Wei / Liu, Che-Ming et al. | 2010
- 168
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Numerical simulation on turbulent flows in vertical chemical vapor deposition reactorsTian, Yan / Li, Chang-Feng / Jiang, Hua-Hong / Li, Hui / Zuo, Ran et al. | 2010
- 173
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Effect of crystal and crucible rotations on the interface shape of Czochralski grown silicon single crystalsAsadi Noghabi, Omidreza / M'Hamdi, Mohammed / Jomâa, Moez et al. | 2010
- 178
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Investigation of nitrogen behaviors during Czochralski silicon crystal growthYu, Xuegong / Yang, Deren / Hoshikawa, Keigo et al. | 2010
- 183
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Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski siliconWang, Biao / Zhang, Xinpeng / Ma, Xiangyang / Yang, Deren et al. | 2010
- 187
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Thermal optimization of CZ bulk growth and wafer annealing for crystalline dislocation-free siliconProstomolotov, A.I. / Verezub, N.A. / Mezhennii, M.V. / Reznik, V.Ya. et al. | 2010
- 193
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Growth of 450mm diameter semiconductor grade silicon crystalsLu, Zheng / Kimbel, Steven et al. | 2010
- 196
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In-situ observation of bubble formation at silicon melt–silica glass interfaceMinami, Toshiro / Maeda, Susumu / Higasa, Mitsuo / Kashima, Kazuhiko et al. | 2010
- 200
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Influence of inclusion on nucleation of silicon casting for photovoltaic (PV) applicationWu, Bei / Clark, Roger et al. | 2010
- 208
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Analysis of grain orientation in cold crucible continuous casting of photovoltaic SiGallien, B. / Duffar, Th. / Lay, S. / Robaut, F. et al. | 2010
- 212
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Silicon crystal morphologies during solidification refining from Al–Si meltsUllah, Mohammad W. / Carlberg, Torbjörn et al. | 2010
- 219
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High-quality multi-crystalline silicon (mc-Si) grown by directional solidification using notched cruciblesLi, T.F. / Yeh, K.M. / Hsu, W.C. / Lan, C.W. et al. | 2010
- 224
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Effects of the furnace pressure on oxygen and silicon oxide distributions during the growth of multicrystalline silicon ingots by the directional solidification processTeng, Ying-Yang / Chen, Jyh-Chen / Lu, Chung-Wei / Chen, Hsueh-I / Hsu, Chuck / Chen, Chi-Yung et al. | 2010
- 230
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Improved fracture strength of multicrystalline silicon by germanium dopingWang, Peng / Yu, Xuegong / Li, Zhonglan / Yang, Deren et al. | 2010
- 234
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The effect of graphite components and crucible coating on the behaviour of carbon and oxygen in multicrystalline siliconRaabe, Lutz / Pätzold, Olf / Kupka, Iven / Ehrig, Jan / Würzner, Sindy / Stelter, Michael et al. | 2010
- 239
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Effect of accelerated crucible rotation on the segregation of impurities in vertical Bridgman growth of multi-crystalline siliconBellmann, M.P. / Meese, E.A. / Arnberg, L. et al. | 2010
- 244
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Numerical studies of flow patterns during Czochralski growth of square-shaped Si crystalsMiller, W. / Frank-Rotsch, Ch. / Rudolph, P. et al. | 2010
- 249
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The use of heater-magnet module for Czochralski growth of PV silicon crystals with quadratic cross sectionRudolph, P. / Czupalla, M. / Lux, B. / Kirscht, F. / Frank-Rotsch, Ch. / Miller, W. / Albrecht, M. et al. | 2010
- 255
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Effect of crucible cover material on impurities of multicrystalline silicon in a unidirectional solidification furnaceGao, B. / Nakano, S. / Kakimoto, K. et al. | 2010
- 259
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3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cellsChen, X.J. / Nakano, S. / Kakimoto, K. et al. | 2010
- 265
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Silica versus silicon nitride crucible: Influence of thermophysical properties on the solidification of multi-crystalline silicon by Bridgman techniqueBellmann, M.P. / Meese, E.A. / Syvertsen, M. / Solheim, A. / Sørheim, H. / Arnberg, L. et al. | 2010
- 269
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Thermo-mechanical analysis of the ingot–crucible contact during multi-crystalline silicon ingot castingM’Hamdi, Mohammed / Gouttebroze, Sylvain / Fjær, Hallvard G. et al. | 2010
- 275
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Numerical study on improved mixing in silicon melts by double-frequency TMFDropka, N. / Miller, W. / Rehse, U. / Rudolph, P. / Büllesfeld, F. / Sahr, U. / Klein, O. / Reinhardt, D. et al. | 2010
- 280
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Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cellsNakano, S. / Chen, X.J. / Gao, B. / Kakimoto, K. et al. | 2010
- 283
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Nucleation and bulk growth control for high efficiency silicon ingot castingZhang, Hui / Zheng, Lili / Ma, Xu / Zhao, Bo / Wang, Cheng / Xu, Fanghua et al. | 2010
- 288
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Thermal system design and optimization of an industrial silicon directional solidification systemMa, Xu / Zheng, Lili / Zhang, Hui / Zhao, Bo / Wang, Cheng / Xu, Fenghua et al. | 2010
- 293
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Numerical study of the influence of different types of magnetic fields on the interface shape in directional solidification of multi-crystalline silicon ingotsTanasie, C. / Vizman, D. / Friedrich, J. et al. | 2010
- 298
-
Effects of argon flow on heat transfer in a directional solidification process for silicon solar cellsLi, Zaoyang / Liu, Lijun / Ma, Wencheng / Kakimoto, Koichi et al. | 2010
- 304
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Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cellsLi, Zaoyang / Liu, Lijun / Ma, Wencheng / Kakimoto, Koichi et al. | 2010
- 313
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Mechanism and modeling of silicon carbide formation and engulfment in industrial silicon directional solidification growthZheng, Lili / Ma, Xu / Hu, Dongli / Zhang, Hui / Zhang, Tao / Wan, Yuepeng et al. | 2010
- 318
-
Numerical simulation of oxygen transport during the CZ silicon crystal growth processChen, Jyh-Chen / Teng, Ying-Yang / Wun, Wan-Ting / Lu, Chung-Wei / Chen, Hsueh-I / Chen, Chi-Yung / Lan, Wen-Chieh et al. | 2010
- 324
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Growth of Si1−xGex bulk crystals with highly homogeneous composition for thermoelectric applicationsArivanandhan, M. / Saito, Y. / Koyama, T. / Momose, Y. / Ikeda, H. / Tanaka, A. / Tatsuoka, T. / Aswal, D.K. / Inatomi, Y. / Hayakawa, Y. et al. | 2010
- 328
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Novel material for super high efficiency multi-junction solar cellsOhshita, Y. / Suzuki, H. / Kojima, N. / Tanaka, T. / Honda, T. / Inagaki, M. / Yamaguchi, M. et al. | 2010
- 332
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The CuGaSe2–CuInSe2–2CdS system and single crystal growth of the γ-phaseParasyuk, O.V. / Atuchin, V.V. / Romanyuk, Y.E. / Marushko, L.P. / Piskach, L.V. / Olekseyuk, I.D. / Volkov, S.V. / Pekhnyo, V.I. et al. | 2011
- 337
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Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVDMyronov, M. / Liu, Xue-Chao / Dobbie, A. / Leadley, D.R. et al. | 2010
- 341
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Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applicationsBosi, M. / Attolini, G. / Calicchio, M. / Ferrari, C. / Frigeri, C. / Gombia, E. / Motta, A. / Rossi, F. et al. | 2010
- 345
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Influence of temperature on the epitaxial growth of In2O3 thin films on Y-ZrO2(111)Zhang, K.H.L. / Lazarov, V.K. / Lai, H.H.-C. / Egdell, R.G. et al. | 2010
- 351
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Time dependent simulations of the growth of III–V crystals by the liquid phase electroepitaxyZytkiewicz, Zbigniew R. / Strak, Pawel / Krukowski, Stanislaw et al. | 2010
- 356
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Sb antisite defects in InSb epilayers prepared by metalorganic chemical vapor depositionJin, Y.J. / Zhang, D.H. / Chen, X.Z. / Tang, X.H. et al. | 2010
- 360
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Phase stability of Mn-doped GaInAs alloysNakamura, Kohji / Miyake, Masahiro / Akiyama, Toru / Ito, Tomonori et al. | 2010
- 363
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Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxyMa, Ta-Chun / Lin, Yan-Ting / Lin, Hao-Hsiung et al. | 2010
- 367
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Effect of temperature on the mutual diffusion of Ge/GaAs and GaAs/GeBosi, Matteo / Attolini, Giovanni / Ferrari, Claudio / Frigeri, Cesare / Calicchio, Marco / Rossi, Francesca / Vad, Kálmán / Csik, Attila / Zolnai, Zsolt et al. | 2010
- 372
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GaP(100) and InP(100) surface structures during preparation in a nitrogen ambientDöscher, Henning / Möller, Kristof / Hannappel, Thomas et al. | 2010
- 379
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Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP systemMoiseev, Konstantin / Dement’ev, Petr / Romanov, Vyacheslav / Mikhailova, Maya et al. | 2010
- 385
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Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamicsMercier, Frédéric / Nishizawa, Shin-ichi et al. | 2010
- 389
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High-quality and large-area 3C–SiC growth on 6H–SiC(0001) seed crystal with top-seeded solution methodUjihara, Toru / Seki, Kazuaki / Tanaka, Ryo / Kozawa, Shigeta / Alexander / Morimoto, Kai / Sasaki, Katsuhiro / Takeda, Yoshikazu et al. | 2010
- 394
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Defect structure of 4H silicon carbide ingotsLebedev, A.O. / Avrov, D.D. / Bulatov, A.V. / Dorozhkin, S.I. / Tairov, Yu.M. / Fadeev, A.Yu. et al. | 2010
- 397
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Growing 3C-SiC heteroepitaxial layers on α-SiC substrate by vapour–liquid–solid mechanism from the Al–Ge–Si ternary systemLorenzzi, Jean / Ferro, Gabriel / Cauwet, François / Souliere, Véronique / Carole, Davy et al. | 2010
- 401
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Wafer curvature analysis in 3C-SiC layers grown on (001) and (111) Si substratesBosi, Matteo / Attolini, Giovanni / Watts, Bernard E. / Rossi, Francesca / Ferrari, Claudio / Riesz, Ferenc / Jiang, Liudi et al. | 2010
- 406
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PVT growth of GaN bulk crystalsSiche, D. / Gogova, D. / Lehmann, S. / Fizia, T. / Fornari, R. / Andrasch, M. / Pipa, A. / Ehlbeck, J. et al. | 2010
- 411
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Numerical simulation of ammonothermal growth processes of GaN crystalsJiang, Yan-Ni / Chen, Qi-Sheng / Prasad, V. et al. | 2010
- 415
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Optical properties of fresh dislocations in GaNYonenaga, I. / Ohno, Y. / Taishi, T. / Tokumoto, Y. / Makino, H. / Yao, T. / Kamimura, Y. / Edagawa, K. et al. | 2010
- 418
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An X-ray diffraction technique for analyzing structural defects including microstrain in nitride materialsPaduano, Q.S. / Weyburne, D.W. / Drehman, A.J. et al. | 2010
- 423
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Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal–organic chemical vapor depositionFang, H. / Sang, L.W. / Zhu, W.X. / Long, H. / Yu, T.J. / Yang, Z.J. / Zhang, G.Y. et al. | 2010
- 427
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Effects of growth direction and polarity on bulk aluminum nitride crystal propertiesFilip, O. / Epelbaum, B.M. / Bickermann, M. / Heimann, P. / Winnacker, A. et al. | 2010
- 432
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Investigations on cobalt doped GaN for spintronic applicationsMunawar Basha, S. / Ramasubramanian, S. / Rajagopalan, M. / Kumar, J. / Won Kang, Tae / Ganapathi Subramaniam, N. / Kwon, Younghae et al. | 2010
- 436
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Investigation of MOCVD growth parameters on the quality of GaN epitaxial layersZhang, X.G. / Soderman, B. / Armour, E. / Paranjpe, A. et al. | 2010
- 441
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Thermodynamic analysis on HVPE growth of InGaN ternary alloyHanaoka, Koshi / Murakami, Hisashi / Kumagai, Yoshinao / Koukitu, Akinori et al. | 2010
- 446
-
Low angle incidence microchannel epitaxy of GaN grown by ammonia-based metal–organic molecular beam epitaxyLin, Chia-Hung / Abe, Ryota / Maruyama, Takahiro / Naritsuka, Shigeya et al. | 2010
- 450
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Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxyLin, Chia-Hung / Abe, Ryota / Maruyama, Takahiro / Naritsuka, Shigeya et al. | 2010
- 454
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Homoepitaxy on GaN substrate with various treatments by metalorganic vapor phase epitaxyChen, Kuei-Ming / Wu, Yin-Hao / Yeh, Yen-Hsien / Chiang, Chen-Hao / Chen, Kuei-You / Lee, Wei-I. et al. | 2010
- 460
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Role of 3C-SiC intermediate layers for III-nitride crystal growth on SiAbe, Yoshihisa / Ohmori, Noriko / Watanabe, Arata / Komiyama, Jun / Suzuki, Syunichi / Fujimori, Hiroyuki / Nakanishi, Hideo / Egawa, Takashi et al. | 2010
- 464
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Growth of GaN film on Si (111) substrate using AlN sandwich structure as bufferPan, Xu / Wei, Meng / Yang, Cuibai / Xiao, Hongling / Wang, Cuimei / Wang, Xiaoliang et al. | 2010
- 468
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Control of active nitrogen species used for PA-MBE growth of group III nitrides on SiOhachi, Tadashi / Yamabe, Nobuhiko / Yamamoto, Yuka / Wada, Motoi / Ariyada, Osamu et al. | 2010
- 474
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Interface roughness of double buffer layer of GaN film grown on Si(111) substrate using GIXR analysisYamamoto, Y. / Yamabe, N. / Ohachi, T. et al. | 2010
- 479
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Growth of semi-polar InN layer on GaAs (110) surface by MOVPEMurakami, Hisashi / Chol Cho, Hyun / Suematsu, Mayu / Togashi, Rie / Kumagai, Yoshinao / Toba, Ryuichi / Koukitu, Akinori et al. | 2010
- 483
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Nonpolar a-plane GaN films grown on γ-LiAlO2 (302) substrates by low-pressure MOCVDJia, Tingting / Zhou, Shengming / Teng, Hao / Lin, Hui / Hou, Xiaorui / Li, Yukun / Li, Wenjie / Wang, Jun / Liu, Jianqi / Huang, Jun et al. | 2010
- 488
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Characterization of GaN/InGaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth techniqueFong, W.K. / Leung, K.K. / Surya, Charles et al. | 2010
- 492
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MOVPE growth of high quality p-type InGaN with intermediate In compositionsSasamoto, K. / Hotta, T. / Sugita, K. / Bhuiyan, A.G. / Hashimoto, A. / Yamamoto, A. / Kinoshita, K. / Kohji, Y. et al. | 2010
- 496
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Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxyLeszczynski, M. / Czernecki, R. / Krukowski, S. / Krysko, M. / Targowski, G. / Prystawko, P. / Plesiewicz, J. / Perlin, P. / Suski, T. et al. | 2010
- 500
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Optical properties of (11¯01) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substratesChiu, Ching-Hsueh / Lin, Da-Wei / Lin, Chien-Chung / Li, Zhen-Yu / Chen, Yi-Chen / Ling, Shih-Chun / Kuo, Hao-Chung / Lu, Tien-Chang / Wang, Shing-Chung / Liao, Wei-Tsai et al. | 2010
- 505
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MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In contentSugita, K. / Tanaka, M. / Sasamoto, K. / Bhuiyan, A.G. / Hashimoto, A. / Yamamoto, A. et al. | 2010
- 509
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Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layersTao, Y.B. / Chen, Z.Z. / Yu, T.J. / Yin, Y. / Kang, X.N. / Yang, Z.J. / Ran, G.Z. / Zhang, G.Y. et al. | 2010
- 513
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Hydrothermal growth of scandium-doped ZnO crystalsZuo, Yan-Bin / Lu, Fu-Hua / Zhang, Chang-Long / Hang, Yin / Zhou, Wei-Ning / Huo, Han-De / Qin, Shi-Jie / Zhou, Hai-Tao / He, Xiao-Ling / Li, Dong-Ping et al. | 2010
- 516
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Surface preparation of ZnO single-crystal substrate for the epitaxial growth of ZnO thin filmsNakamura, T. / Masuko, K. / Ashida, A. / Yoshimura, T. / Fujimura, N. et al. | 2010
- 519
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Properties of ZnO grown on sapphire with different buffer layersWu, Xuefeng / Huang, Binwang / Zhan, Huahan / Kang, Junyong et al. | 2010
- 524
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Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman methodNishio, Mitsuhiro / Hiwatashi, Kyosuke / Saito, Katsuhiko / Tanaka, Tooru / Guo, Qixin et al. | 2010
- 528
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Simulation and crystal growth of CdTe by axial vibration control technique in Bridgman configurationAvetissov, I.Ch. / Sukhanova, E.A. / Khomyakov, A.V. / Zinovjev, A.Yu. / Kostikov, V.A. / Zharikov, E.V. et al. | 2010
- 533
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Crystal growth and analysis of ohmic contact and magneto-optical isolator properties of cadmium manganese telluridePrakasam, Mythili / Viraphong, Oudomsack / Teulé-Gay, Lionel / Decourt, Rodolphe / Veber, Philippe / Víllora, Encarnación G. / Shimamura, Kiyoshi et al. | 2010
- 539
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Aggregation of donor nitrogen in irradiated Ni-containing synthetic diamondsYelisseyev, A.P. / Vins, V.G. / Lobanov, S.S. / Afonin, D.V. / Blinkov, A.E. / Maximov, A.Yu. et al. | 2010
- 545
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Scintillation properties of Sc-, Pr-, and Ce-doped LuAG epitaxial garnet filmsPrusa, P. / Kucera, M. / Mares, J.A. / Nikl, M. / Nitsch, K. / Hanus, M. / Onderisinova, Z. / Cechak, T. et al. | 2010
- 549
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Growth and luminescence properties of Eu-doped (Na0.425−xLu0.575+x)F2.15+2x single crystalsFuruya, Yuki / Tanaka, Hidehiko / Fukuda, Kentaro / Kawaguchi, Noriaki / Yokota, Yuui / Yanagida, Takayuki / Chani, Valery / Yoshikawa, Akira et al. | 2010
- 553
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Semiconducting icosahedral boron arsenide crystal growth for neutron detectionWhiteley, C.E. / Zhang, Y. / Gong, Y. / Bakalova, S. / Mayo, A. / Edgar, J.H. / Kuball, M. et al. | 2010
- 558
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Czochralski growth of lead iodide single crystals: Investigations and comparison with the Bridgman methodTonn, J. / Danilewsky, A.N. / Cröll, A. / Matuchova, M. / Maixner, J. et al. | 2010
- 563
-
Investigation of oxide removal from Si(100) substrates in dependence of the MOVPE process gas ambientDöscher, Henning / Brückner, Sebastian / Hannappel, Thomas et al. | 2010
- 570
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Effect of low-temperature InP cap layer thickness on InAs quantum dot photoluminescenceWang, Hao / Yuan, Jiayue / van Veldhoven, René P.J. / Nötzel, Richard et al. | 2010
- 572
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Study of molecular-beam epitaxy growth on patterned GaAs (100) substrates by masked indium ion implantationZhou, Huiying / Qu, Shengchun / Jin, Peng / Xu, Bo / Ye, Xiaoling / Liu, Junpeng / Wang, Zhanguo et al. | 2010
- 576
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Role of growth mode in the formation of magnetic properties of InMnAs grown by MOVPENovák, J. / Vávra, I. / Hasenöhrl, S. / Reiffers, M. / Štrichovanec, P. / Magen, C. et al. | 2010
- 580
-
Microstructures of YBa1.85Eu0.15Cu3O7−δ superconducting films grown on SrTiO3 and YSZ substratesXie, Qiyun / Gu, Mingqiang / Qian, Bin / Wu, Xiaoshan / Jiang, Zhengsheng / Zou, Jin / Gao, Ju et al. | 2010
- 580
-
Microstructures of YBa1.85Eu0.15Cu3O7-delta superconducting films grown on SrTiO3 and YSZ substratesXie, Qiyun / Gu, Mingqiang / Qian, Bin / Wu, Xiaoshan / Jiang, Zhengsheng / Zou, Jin / Gao, Ju et al. | 2011
- 586
-
Crystal quality and surface morphology of uniaxial oriented multilayer perovskite thin films grown by excimer laser assisted MODNakajima, Tomohiko / Tsuchiya, Tetsuo / Kumagai, Toshiya et al. | 2010
- 590
-
Wide-range temperature dependence of epitaxial graphene growth on 4H-SiC (000−1): A study of ridge structures formation dynamics associated with temperatureUshio, Shoji / Yoshii, Arata / Tamai, Naoto / Ohtani, Noboru / Kaneko, Tadaaki et al. | 2010
- 595
-
Dewetting behavior of CsI layers on LiF substrateFedorov, A. / Lebedinsky, A. / Mateychenko, P. et al. | 2010
- 599
-
Preparation and characterization of single crystalline SnO2 films deposited on TiO2 (001) by MOCVDLuan, Caina / Ma, Jin / Zhu, Zhen / Kong, Lingyi / Yu, Qiaoqun et al. | 2010
- 602
-
Development of the β-BaB2O4 crystal growth technique in the heat field of three-fold axis symmetryKokh, A.E. / Bekker, T.B. / Vlezko, V.A. / Kokh, K.A. et al. | 2010
- 606
-
Improved fourth harmonic generation in β-BaB2O4 by tight elliptical focusing perpendicular to walk-off planeTakahashi, Masakuni / Osada, Akira / Dergachev, Alex / Moulton, Peter F. / Cadatal-Raduban, Marilou / Shimizu, Toshihiko / Sarukura, Nobuhiko et al. | 2010
- 610
-
Flux growth of large KBBF crystals by localized spontaneous nucleationWang, Xiaoyang / Yan, Xue / Luo, Siyang / Chen, Chuangtian et al. | 2010
- 613
-
Hydrothermal growth of KBBF crystals from KOH solutionZhou, Hai-Tao / He, Xiao-Ling / Zhou, Wei-Ning / Hu, Zhang-Gui / Zhang, Chang-Long / Huo, Han-De / Wang, Jin-Liang / Qin, Shi-Jie / Zuo, Yan-Bin / Lu, Fu-Hua et al. | 2010
- 618
-
Crystal growth and optical properties of non-UV absorption K2Al2B2O7 crystalsLiu, Chunlei / Liu, Lijuan / Zhang, Xin / Wang, Lirong / Wang, Guiling / Chen, Chuangtian et al. | 2010
- 621
-
Study on defects in hydrothermal-grown KBe2BO3F2 crystalsYu, Jinqiu / Liu, Lijuan / Wang, Xiaoyang / Zhou, Haitao / He, Xiaoling / Zhang, Changlong / Zhou, Weining / Chen, Chuangtian et al. | 2010
- 625
-
Enhancement of the CsB3O5(CBO) crystal quality by fast cooling after crystal growthWang, Zengmei / Rajesh, Dodla / Yoshimura, Masashi / Shimatani, Hiroya / Kitaoka, Yasuo / Mori, Yusuke / Sasaki, Takatomo et al. | 2010
- 629
-
Crystal growth and nonlinear optical coefficients of Bi2ZnOB2O6Li, Feng / Pan, Shilie et al. | 2010
- 632
-
Optical properties of Nd3+-doped La2CaB10O19 crystals with different Nd3+ concentrationsWu, Yang / Zhang, Jianxiu / Zhang, Guochun / Fu, Peizhen / Wu, Yicheng et al. | 2010
- 636
-
Growth and characterization of LCOB and NdLCOB single crystals for laser applicationsArun Kumar, R. / Dhanasekaran, R. et al. | 2010
- 642
-
Predicting refractive indices of the borate optical crystalsQin, Fangli / Li, R.K. et al. | 2010
- 645
-
Growth and characterization of congruent lithium isotope niobate (7LiNbO3) single crystalZhang, N.N. / Wang, J.Y. / Yao, S.H. / Hu, X.B. / Zhang, H.J. / Ayala, A.P. / Guedes, I. et al. | 2010
- 649
-
Crystal growth, VTE treatment, and characterizations of Nd-doped LiTaO3Wu, C.C. / Hsu, W.T. / Chen, Z.B. / Choubey, R.K. / Lan, C.W. et al. | 2010
- 653
-
Growth of Zr co-doped Tm:LiNbO3 single crystal for improvement of photoluminescence property in blue wavelength rangeShur, J.W. / Choi, K.H. / Yoon, D.H. et al. | 2010
- 657
-
Influence of ZnO codoping on growth and holographic properties of Ru/Fe double-doped LiNbO3 single crystalsFan, Yexia / Xu, Chao / Wang, Yijie / Xia, Shixing / Guan, Chengxiang / Cao, Liangcai et al. | 2010
- 661
-
Growth and nonvolatile holographic storage properties of Hf:Ce:Cu:LiNbO3 crystalsXu, Zhaopeng / Xu, Chao / Leng, Xuesong / Ben, YongZhi / Zhao, Yan / Xu, Yuheng et al. | 2010
- 665
-
Investigations on growth and two-wavelength holographic storage properties varied with RuO2 codoping in Fe:LiNbO3 crystalsXu, Chao / Leng, Xuesong / Mo, Yang / Wang, Yijie / Cao, Liangcai / Yang, Chunhui / Xu, Yuheng et al. | 2010
- 669
-
Growth and radiation resistant properties of 2.7–2.8μm Yb,Er:GSGG laser crystalSun, Dunlu / Luo, Jianqiao / Zhang, Qingli / Xiao, Jingzhong / Liu, Wenpeng / Wang, Shangfei / Jiang, Haihe / Yin, Shaotang et al. | 2010
- 674
-
Simulation and experiment on laser-heated pedestal growth of chromium-doped yttrium aluminum garnet single-crystal fiberChang, Chun-Lin / Huang, Sheng-Lung / Lo, Chia-Yao / Huang, Kuang-Yao / Lan, Chung-Wen / Cheng, Wood-Hi / Chen, Peng-Yi et al. | 2010
- 679
-
Growth and characterization of large SrMoO4 crystalsLi, Zhen / Wang, Jiyang / Zhang, Huaijin / Yu, Haohai / Pan, Zhongben et al. | 2010
- 683
-
Synthesis, structural and vibrational properties of microcrystalline RbNd(MoO4)2Atuchin, V.V. / Chimitova, O.D. / Gavrilova, T.A. / Molokeev, M.S. / Kim, Sung-Jin / Surovtsev, N.V. / Bazarov, B.G. et al. | 2010
- 687
-
Crystal growth of PbWO4:Nd3+ and PbMoO4:Nd3+ crystals and their characterization by means of optical and dielectric relaxation spectroscopyGorobets, Yu.N. / Kosmyna, M.B. / Luchechko, A.P. / Nazarenko, B.P. / Puzikov, V.M. / Shekhovtsov, A.N. / Sugak, D.Yu. et al. | 2010
- 691
-
Passively Q-switched Nd:Gd0.63Y0.37VO4/Cr4+:YAG microchip laserZhuang, Shidong / Yu, Haohai / Wang, Zhengping / Zhang, Huaijin / Wang, Jiyang / Guo, Lei / Chen, Lijuan / Zhao, Yongguang / Xu, Xinguang et al. | 2010
- 695
-
Hot zone design for controlled growth to mitigate cracking in laser crystal growthZhang, Hui / Zheng, Lili / Fang, Haisheng et al. | 2010
- 700
-
The rapid growth of large-scale KDP single crystal in brief procedureZhuang, Xinxin / Ye, Liwang / Zheng, Guozong / Su, Genbo / He, Youpin / Lin, Xiuqin / Xu, Zhihuang et al. | 2010
- 703
-
Dynamic global model of oxide Czochralski process with weighing controlMamedov, V.M. / Vasiliev, M.G. / Yuferev, V.S. et al. | 2010
- 708
-
Single crystal preparation and properties of the AgGaGeS4–AgGaGe3Se8 solid solutionShevchuk, M.V. / Atuchin, V.V. / Kityk, A.V. / Fedorchuk, A.O. / Romanyuk, Y.E. / CaŁus, S. / Yurchenko, O.M. / Parasyuk, O.V. et al. | 2010
- 713
-
Growth and characterization of AgGa1−xInxSe2 crystals with high indium contentsWan, Shuquan / Zhu, Shifu / Zhao, Beijun / Chen, Baojun / He, Zhiyu / Xu, Jianhua et al. | 2010
- 717
-
Growth and thermal annealing effect on infrared transmittance of ZnGeP2 single crystalZhang, Guodong / Tao, Xutang / Wang, Shanpeng / Liu, Guandong / Shi, Qiong / Jiang, Minhua et al. | 2010
- 721
-
Growth and annealing characterization of ZnGeP2 crystalYang, Yongjuan / Zhang, Yujun / Gu, Qingtian / Zhang, Huaijin / Tao, Xutang et al. | 2010
- 725
-
Influence of annealing on optical and electrical properties of ZnGeP2 single crystalsFan, Qiang / Zhu, Shifu / Zhao, Beijun / Chen, Baojun / He, Zhiyu / Cheng, Jiang / Xu, Ting et al. | 2010
- 729
-
Chemical etching orientation of ZnGeP2 single crystalsCheng, Jiang / Zhu, Shifu / Zhao, Beijun / Chen, Baojun / He, Zhiyu / Fan, Qiang / Xu, Ting et al. | 2010
- 733
-
Growth and spectroscopic characteristics of Er-doped CeF3 crystalWang, Qingguo / Su, Liangbi / Li, Hongjun / Zheng, Lihe / Tang, Huili / Guo, Xin / Xu, Jun et al. | 2011
- 737
-
Micro-pulling-down-method-grown Ce:LiCAF crystal for side-pumped laser amplifierKouno, Masahiro / Lynn Gabayno, Jacque / Cadatal-Raduban, Marilou / Pham, Minh / Yamanoi, Kohei / Estacio, Elmer / Garcia, Wilson / Nakazato, Tomoharu / Shimizu, Toshihiko / Sarukura, Nobuhiko et al. | 2010
- 741
-
Laser-induced nucleation in protein crystallization: Local increase in protein concentration induced by femtosecond laser irradiationIefuji, Natsuko / Murai, Ryota / Maruyama, Mihoko / Takahashi, Yoshinori / Sugiyama, Shigeru / Adachi, Hiroaki / Matsumura, Hiroyoshi / Murakami, Satoshi / Inoue, Tsuyoshi / Mori, Yusuke et al. | 2010
- 745
-
Unidirectional growth of organic nonlinear optical l-arginine maleate dihydrate single crystal by Sankaranarayanan–Ramasamy (SR) method and its characterizationCharoen-In, Urit / Ramasamy, P. / Manyum, P. et al. | 2010
- 751
-
Investigations on the solubility, growth, structural, optical, mechanical, dielectric and SHG behaviour of ammonium acetate doped ammonium dihydrogen phosphate crystalsRajesh, P. / Boopathi, K. / Ramasamy, P. et al. | 2010
- 757
-
Investigations on the SR method growth, etching, birefringence, laser damage threshold and dielectric characterization of sodium acid phthalate single crystalsSenthil, A. / Ramasamy, P. / Verma, Sunil et al. | 2010