Aluminium incorporation for growth optimization of 1.3μm emission InAs/GaAs quantum dots by molecular beam epitaxy (English)
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In:
Journal of Crystal Growth
;
251
, 1-4
;
172-176
;
2002
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Aluminium incorporation for growth optimization of 1.3μm emission InAs/GaAs quantum dots by molecular beam epitaxy
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Contributors:Wei, Y.Q. ( author ) / Wang, S.M. ( author ) / Ferdos, F. ( author ) / Vukusic, J. ( author ) / Zhao, Q.X. ( author ) / Sadeghi, M. ( author ) / Larsson, A. ( author )
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Published in:Journal of Crystal Growth ; 251, 1-4 ; 172-176
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Publisher:
- New search for: Elsevier Science B.V.
-
Publication date:2002-01-01
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Size:5 pages
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ISSN:
-
DOI:
-
Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 251, Issue 1-4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Three decades of molecular beam epitaxyFoxon, C.T. et al. | 2002
- 9
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Progress and prospects of advanced quantum nanostructures and roles of molecular beam epitaxySakaki, Hiroyuki et al. | 2003
- 17
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Speculations about future directionsKroemer, Herbert et al. | 2002
- 23
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Theoretical study of In desorption and segregation kinetics in MBE growth of InGaAs and InGaNStanley, Irena / Coleiny, Golshan / Venkat, Rama et al. | 2002
- 29
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A simple model for MBE growth controlled by group III atom migrationHolland, M.C. et al. | 2003
- 35
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Dynamics of spontaneous roughening on the GaAs(001)-(2x4) surfaceDing, Z. / Bullock, D. W. / Oliver, W. F. / Thibado, P. M. / LaBella, V. P. et al. | 2003
- 35
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Dynamics of spontaneous roughening on the GaAs(001)-(2×4) surfaceDing, Z. / Bullock, D.W. / Oliver, W.F. / Thibado, P.M. / LaBella, V.P. et al. | 2002
- 40
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Desorption process of GaAs surface native oxide controlled by direct Ga-beam irradiationAsaoka, Y. et al. | 2003
- 46
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Ga-rich GaAs(001) surfaces observed by STM during high-temperature annealing in MBETsukamoto, Shiro / Pristovsek, Markus / Ohtake, Akihiro / Orr, Bradford G. / Bell, Gavin R. / Ohno, Takahisa / Koguchi, Nobuyuki et al. | 2002
- 51
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Time-resolved X-ray diffraction study on surface structure and morphology during molecular-beam epitaxy growthTakahasi, M. / Yoneda, Y. / Inoue, H. / Yamamoto, N. / Mizuki, J. et al. | 2002
- 56
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Island and pit kinetics on the growing GaAs (001) surface studied by synchrotron X-ray diffractionBraun, Wolfgang / Jenichen, Bernd / Kaganer, Vladimir M. / Shtukenberg, Alexander S. / Däweritz, Lutz / Ploog, Klaus H. et al. | 2002
- 62
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Control of MBE surface step-edge kinetics to make an atomically smooth quantum wellYoshita, Masahiro / Oh, Ji-Won / Akiyama, Hidefumi / Pfeiffer, Loren N. / West, Ken W. et al. | 2002
- 68
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Real-time surface composition and roughness analysis in MBE using RHEED-induced X-ray fluorescenceBraun, Wolfgang / Ploog, Klaus H. et al. | 2002
- 73
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Accuracy of AlGaAs growth rates and composition determination using RHEED oscillationsHarvey, T.E / Bertness, K.A / Hickernell, R.K / Wang, C.M / Splett, J.D et al. | 2003
- 80
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V/III ratio dependence of surface migration length of As4 molecules during molecular beam epitaxy of GaAsP on (411)A GaAs substratesHiguchi, Yu / Uemura, Masaya / Masui, Yuji / Kitada, Takahiro / Shimomura, Satoshi / Hiyamizu, Satoshi et al. | 2002
- 85
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Mesoscopic island structure at GaAs/(AlGa)As interfaces grown by MBEGottwaldt, L. / Pierz, K. / Ahlers, F.J. / Göbel, E.O. / Nau, S. / Torunski, T. / Stolz, W. et al. | 2002
- 90
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Characterization of interface roughness scattering of electrons in an In0.53Ga0.47As/In0.52Al0.48As QW-HEMT structure with (411)A super-flat interfacesWatanabe, Issei / Kanzaki, Kenji / Kitada, Takahiro / Yamamoto, Masashi / Shimomura, Satoshi / Hiyamizu, Satoshi et al. | 2002
- 96
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Electronic properties of etched–regrown heterostructure interfacesBeyer, S. / Löhr, S. / Heyn, Ch. / Heitmann, D. / Hansen, W. et al. | 2002
- 101
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Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surfaceMartini, S. / Quivy, A.A. / Lamas, T.E. / da Silva, M.J. / da Silva, E.C.F. / Leite, J.R. et al. | 2002
- 106
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Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxyBeresford, R. / Lynch, C. / Chason, E. et al. | 2002
- 112
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Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layersChauveau, Jean-Michel / Cordier, Y. / Kim, H.J. / Ferré, D. / Androussi, Y. / Persio, J.Di et al. | 2002
- 118
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Effects of noise level in fitting in situ optical reflectance spectroscopy dataFu, Chihchiang / Bertness, K.A. / Wang, C.M. et al. | 2002
- 124
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InGaAs composition monitoring for production MBE by in situ optical-based flux monitor (OFM)Pinsukanjana, Paul R. / Marquis, Jeremy M. / Hubbard, Jared / Trivedi, Mehul A. / Dickey, Roger F. / Tsai, Jerry M.-S. / Kuo, Sam P. / Kao, Philip S. / Kao, Yung-Chung et al. | 2002
- 130
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Multiwafer gas source MBE development for InGaAsP/InP laser productionLelarge, F. / Sanchez, J.J / Gaborit, F. / Gentner, J.L. et al. | 2002
- 135
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Low-temperature growth of self-assembled InAs dots on GaAs by molecular beam epitaxyZhan, H.H. / Nötzel, R. / Hamhuis, G.J. / Eijkemans, T.J. / Wolter, J.H. et al. | 2003
- 140
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Ga/In-intermixing and segregation during InAs quantum dot formationHeyn, Ch. / Hansen, W. et al. | 2002
- 145
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Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxyFerdos, Fariba / Wang, Shumin / Wei, Yongqiang / Sadeghi, Mahdad / Zhao, Qingxiang / Larsson, Anders et al. | 2003
- 150
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Strain-driven (In,Ga)As growth instability on GaAs (311)A and (311)B: self-organization of template for InAs quantum dot nucleation controlGong, Q. / Nötzel, R. / Wolter, J.H. et al. | 2002
- 155
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Controlling the shape of InAs self-assembled quantum dots by thin GaAs capping layersTakehana, K. / Pulizzi, F. / Patanè, A. / Henini, M. / Main, P.C. / Eaves, L. / Granados, D. / Garcia, J.M. et al. | 2002
- 161
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Scanning tunneling microscopy study of GaAs overgrowth on InAs islands formed on GaAs(001)Hasegawa, Shigehiko / Suekane, Osamu / Takata, Masahiro / Nakashima, Hisao et al. | 2003
- 166
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Photoluminescence investigation of low-temperature capped self-assembled InAs/GaAs quantum dotsSongmuang, R. / Kiravittaya, S. / Sawadsaringkarn, M. / Panyakeow, S. / Schmidt, O.G. et al. | 2003
- 172
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Aluminium incorporation for growth optimization of 1.3μm emission InAs/GaAs quantum dots by molecular beam epitaxyWei, Y.Q. / Wang, S.M. / Ferdos, F. / Vukusic, J. / Zhao, Q.X. / Sadeghi, M. / Larsson, A. et al. | 2002
- 172
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Aluminium incorporation for growth optimization of 1.3mm emission InAs/GaAs quantum dots by molecular beam epitaxyWei, Y. Q. / Wang, S. M. / Ferdos, F. / Vukusic, J. / Zhao, Q. X. / Sadeghi, M. / Larsson, A. et al. | 2003
- 177
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Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dotsXu, Z.C. / Leosson, K. / Birkedal, D. / Hvam, J.M. / Sadowski, J. / Zhao, Z.Y. / Chen, X.S. / Liu, Y.M. / Yang, K.T. et al. | 2002
- 181
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Optical response at 1.3μm and 1.5μm with InAs quantum dots embedded in a pure GaAs matrixda Silva, M.J. / Quivy, A.A. / Martini, S. / Lamas, T.E. / da Silva, E.C.F. / Leite, J.R. et al. | 2002
- 181
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Optical response at 1.3mm and 1.5mm with InAs quantum dots embedded in a pure GaAs matrixda Silva, M. J. / Quivy, A. A. / Martini, S. / Lamas, T. E. / da Silva, E. C. / Leite, J. R. et al. | 2003
- 186
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Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dotsMaes, J. / Henini, M. / Hayne, M. / Patanè, A. / Pulizzi, F. / Eaves, L. / Main, P.C. / Moshchalkov, V.V. et al. | 2002
- 192
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Emission energy and polarization tuning of InAs/GaAs self-assembled quantum dots by growth interruptionOchoa, D. / Polimeni, A. / Capizzi, M. / Patané, A. / Henini, M. / Eaves, L. / Main, P.C. et al. | 2002
- 196
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Observation of blue-shifted photoluminescence in stacked InAs/GaAs quantum dotsSomintac, A. / Estacio, E. / Salvador, A. et al. | 2002
- 201
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Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxySaucedo-Zeni, N. / Zamora-Peredo, L. / Gorbatchev, A.Yu / Lastras-Martı́nez, A. / Balderas-Navarro, R. / Medel-Ruiz, C.I. / Méndez-Garcı́a, V.H. et al. | 2002
- 208
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Characteristics of InAs “dots-in-a-graded-well”Chen, L. / Pal, D. / Towe, E. et al. | 2003
- 213
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Customized nanostructures MBE growth: from quantum dots to quantum ringsGranados, D. / Garcı́a, J.M. et al. | 2003
- 218
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Desorption of InAs quantum dotsHeyn, Ch. / Hansen, W. et al. | 2002
- 223
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Growth and temperature characteristic of self-assembled InAs-QD on GaInPAmanai, H. / Nagao, S. / Sakaki, H. et al. | 2003
- 230
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Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55μm quantum dot laserParanthoen, C. / Platz, C. / Moreau, G. / Bertru, N. / Dehaese, O. / Le Corre, A. / Miska, P. / Even, J. / Folliot, H. / Labbé, C. et al. | 2003
- 230
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Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55mm quantum dot laserParanthoen, C. / Platz, C. / Moreau, G. / Bertru, N. / Dehaese, O. / Le Corre, A. / Miska, P. / Even, J. / Folliot, H. / Labbe, C. et al. | 2003
- 236
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Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dotsPérez-Centeno, Armando / Méndez-Garcı́a, Vı́ctor-Hugo / Zamora-Peredo, Luis / Saucedo-Zeni, Nadia / López-López, Máximo et al. | 2002
- 243
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Growth and microstructure of semimetallic ErAs particles embedded in an In0.53Ga0.47As matrixDriscoll, Daniel C. / Hanson, Micah P. / Mueller, Elisabeth / Gossard, Arthur C. et al. | 2003
- 248
-
Epitaxial growth of 1.55μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applicationsSchwertberger, R. / Gold, D. / Reithmaier, J.P. / Forchel, A. et al. | 2002
- 248
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Epitaxial growth of 1.55mm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applicationsSchwertberger, R. / Gold, D. / Reithmaier, J. P. / Forchel, A. et al. | 2003
- 253
-
Molecular beam epitaxial growth studies of ordered GaAs nanodot arrays using anodic alumina masksMei, Xiangyang / Blumin, Marina / Kim, Danny / Wu, Zhanghua / Ruda, Harry E. et al. | 2002
- 258
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Self-assembled nanoholes and lateral QD bi-molecules by molecular beam epitaxy and atomically precise in situ etchingKiravittaya, S. / Songmuang, R. / Jin-Phillipp, N.Y. / Panyakeow, S. / Schmidt, O.G. et al. | 2003
- 264
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Role of In desorption for formation of self-organized (In,Ga)As quantum wires on GaAs(100) during superlattice formationMano, T. / Nötzel, R. / Hamhuis, G.J. / Eijkemans, T.J. / Wolter, J.H. et al. | 2002
- 269
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Improved uniformity of self-organized In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (775)B-oriented InP substrate by molecular beam epitaxyOhno, Yasuhide / Shimomura, Satoshi / Hiyamizu, Satoshi et al. | 2003
- 276
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Formation of nano-oxide regions in p2+-GaAs epilayers by localised atomic force microscope probe oxidation for fabrication of nano-structure devicesMatsuzaki, Y. / Ota, N. / Yamada, A. / Sandhu, A. / Konagai, M. et al. | 2003
- 276
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Formation of nano-oxide regions in p2+-GaAs epilayers by localized atomic force microscope probe oxidation for fabrication of nano-structure devicesMatsuzaki, Yuichi / Ota, Narihisa / Yamada, Akira / Sandhu, Adarsh / Konagai, Makoto et al. | 2002
- 281
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Application of multi-step formation during molecular beam epitaxy for fabricating novel nanomechanical structuresYamaguchi, Hiroshi / Hirayama, Yoshiro et al. | 2002
- 285
-
Molecular beam epitaxy and properties of ferromagnetic III–V semiconductorsOhno, Hideo et al. | 2002
- 292
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Growth and properties of ferromagnet–semiconductor heterostructures for spin injection at room temperaturePloog, Klaus H. / Herfort, J. / Schönherr, H.-P. / Moreno, M. / Dhar, S. et al. | 2002
- 297
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Structural and magnetic order in MnAs films grown by molecular beam epitaxy on GaAs for spin injectionDäweritz, L. / Kästner, M. / Hesjedal, T. / Plake, T. / Jenichen, B. / Ploog, K.H. et al. | 2002
- 303
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MBE growth, structural, and transport properties of Mn d-doped GaAs LayersNazmul, A. M. / Sugahara, S. / Tanaka, M. et al. | 2003
- 303
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MBE growth, structural, and transport properties of Mn δ-doped GaAs LayersNazmul, Ahsan M. / Sugahara, S. / Tanaka, M. et al. | 2002
- 311
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The growth of GaMnAs films by molecular beam epitaxy using arsenic dimersCampion, R.P. / Edmonds, K.W. / Zhao, L.X. / Wang, K.Y. / Foxon, C.T. / Gallagher, B.L. / Staddon, C.R. et al. | 2002
- 317
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Epitaxial growth and magnetic properties of single-crystal MnAs/AlAs/MnAs magnetic tunnel junctions on exact (111)B GaAs substrates: the effect of ultrathin GaAs buffer layersSugahara, S. / Tanaka, M. et al. | 2002
- 323
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Growth of the half-Heusler alloy NiMnSb on (In,Ga)As/InP by molecular beam epitaxyBach, Peter / Rüster, Christian / Gould, Charles / Becker, Charles R. / Schmidt, Georg / Molenkamp, Laurens W. et al. | 2002
- 327
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MBE growth and properties of GaCrNHashimoto, M. / Zhou, Y.K. / Kanamura, M. / Katayama-Yoshida, H. / Asahi, H. et al. | 2002
- 331
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MBE growth of GaMnN diluted magnetic semiconductors and its magnetic propertiesChen, P.P. / Makino, H. / Kim, J.J. / Yao, T. et al. | 2002
- 337
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Spin injection from a ferromagnetic electrode into InAs surface inversion layerYoh, Kanji / Ohno, Hiroshi / Katano, Yoshito / Mukasa, Koichi / Ramsteiner, Manfred et al. | 2003
- 342
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New structures for carrier-controlled ferromagnetism in Cd1−xMnxTe quantum wellsBertolini, M. / Maslana, W. / Boukari, H. / Gilles, B. / Cibert, J. / Ferrand, D. / Tatarenko, S. / Kossacki, P. / Gaj, J.A. et al. | 2002
- 347
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Molecular beam epitaxial growth of CdMnSe on InAs and AlGaSbGrabs, Peter / Slobodskyy, Anatoliy / Richter, Georg / Fiederling, Roland / Gould, Charles / Becker, Charles R. / Schmidt, Georg / Molenkamp, Laurens W. et al. | 2002
- 353
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GaInNAs for GaAs based lasers for the 1.3 to 1.5mm rangeFischer, M. / Gollub, D. / Reinhardt, M. / Kamp, M. / Forchel, A. et al. | 2003
- 353
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GaInNAs for GaAs based lasers for the 1.3 to 1.5μm rangeFischer, M. / Gollub, D. / Reinhardt, M. / Kamp, M. / Forchel, A. et al. | 2002
- 360
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The role of Sb in the MBE growth of (GaIn)(NAsSb)Volz, Kerstin / Gambin, Vincent / Ha, Wonill / Wistey, Mark A. / Yuen, Homan / Bank, Seth / Harris, James S. et al. | 2002
- 367
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1.5mm GaInNAs(Sb) lasers grown on GaAs by MBEBank, S. / Ha, W. / Gambin, V. / Wistey, M. / Yuen, H. / Goddard, L. / Kim, S. / Harris Jr, J. S. et al. | 2003
- 367
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1.5μm GaInNAs(Sb) lasers grown on GaAs by MBEBank, Seth / Ha, Wonill / Gambin, Vincent / Wistey, Mark / Yuen, Homan / Goddard, Lynford / Kim, Seongsin / Harris, James S. Jr. et al. | 2003
- 372
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Growth characteristics of GaInNAs/GaAs quantum dots by chemical beam epitaxyMakino, Shigeki / Miyamoto, Tomoyuki / Ohta, Masataka / Kageyama, Takeo / Ikenaga, Yoshihiko / Koyama, Fumio / Iga, Kenichi et al. | 2002
- 378
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A study and control of lattice sites of N and In/Ga interdiffusion in dilute nitride quantum wellsPeng, C.S. / Li, W. / Jouhti, T. / Pavelescu, E.-M. / Pessa, M. et al. | 2003
- 383
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Correlations between structural and optical properties of GaInNAs quantum wells grown by MBEChauveau, J.-M. / Trampert, A. / Pinault, M.-A. / Tournié, E. / Du, K. / Ploog, K.H. et al. | 2002
- 388
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InAs/InGaAsN quantum dots emitting at 1.55mm grown by molecular beam epitaxyUstinov, V. M. / Egorov, A. Y. / Odnoblyudov, V. A. / Kryzhanovskaya, N. V. / Musikhin, Y. G. / Tsatsul`nikov, A. F. / Alferov, Z. I. et al. | 2003
- 388
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InAs/InGaAsN quantum dots emitting at 1.55μm grown by molecular beam epitaxyUstinov, Victor M. / Egorov, Anton Yu. / Odnoblyudov, Vladimir A. / Kryzhanovskaya, Natalya V. / Musikhin, Yurii G. / Tsatsul’nikov, Andrey F. / Alferov, Zhores I. et al. | 2002
- 392
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A comparison of MBE- and MOCVD-grown GaInNAsPtak, A.J. / Johnston, S.W. / Kurtz, Sarah / Friedman, D.J. / Metzger, W.K. et al. | 2002
- 399
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Thickness dependent roughening of Ga(As,N)/GaAs MQW structures with high nitrogen contentMussler, G. / Däweritz, L. / Ploog, K.H. et al. | 2002
- 403
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Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3mm wavelengthLi, L. H. / Patriarche, G. / Lemaitre, A. / Largeau, L. / Travers, L. / Harmand, J. C. et al. | 2003
- 403
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Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3μm wavelengthLi, L.H. / Patriarche, G. / Lemaitre, A. / Largeau, L. / Travers, L. / Harmand, J.C. et al. | 2003
- 408
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Structural changes on annealing of MBE grown (Ga, In)(N, As) as measured by X-ray absorption fine structureGambin, Vincent / Lordi, Vincenzo / Ha, Wonill / Wistey, Mark / Takizawa, Toshiyuki / Uno, Kazuyuki / Friedrich, Stephan / Harris, James et al. | 2002
- 412
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Growth of GaInNAs by atomic hydrogen-assisted RF-MBEOhmae, Akira / Matsumoto, Naoki / Okada, Yoshitaka et al. | 2002
- 417
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Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructuresEgorov, A.Yu. / Odnobludov, V.A. / Mamutin, V.V. / Zhukov, A.E. / Tsatsul’nikov, A.F. / Kryzhanovskaya, N.V. / Ustinov, V.M. / Hong, Y.G. / Tu, C.W. et al. | 2002
- 422
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RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layerNishio, Susumu / Nishikawa, Atsushi / Katayama, Ryuji / Onabe, Kentaro / Shiraki, Yasuhiro et al. | 2002
- 427
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MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs (001)Nishikawa, A. / Katayama, R. / Onabe, K. / Shiraki, Y. et al. | 2002
- 432
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MBE development of dilute nitrides for commercial long-wavelength laser applicationsMalis, O. / Liu, W.K. / Gmachl, C. / Fastenau, J.M. / Joel, A. / Gong, P. / Bland, S.W. / Moshegov, N. et al. | 2002
- 437
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Growth and characterization of GaInNP grown on GaAs substratesHong, Y.G. / Juang, F.S. / Kim, M.H. / Tu, C.W. et al. | 2002
- 443
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Improvement of crystalline quality of GaAsyP1−x−yNx layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiationMomose, Kenji / Yonezu, Hiroo / Furukawa, Yuzo / Utsumi, Atsushi / Yoshizumi, Yusuke / Shinohara, Sei et al. | 2002
- 449
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Surfactant enhanced growth of GaNAs and InGaNAs using bismuthTixier, S. / Adamcyk, M. / Young, E.C. / Schmid, J.H. / Tiedje, T. et al. | 2002
- 455
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Improvement of cubic GaN film crystal quality by use of an AlN/GaN ordered alloy on GaAs (100) by plasma assisted molecular beam epitaxyKimura, Ryuhei / Shigemori, Atsushi / Shike, Junichi / Ishida, Koichi / Takahashi, Kiyoshi et al. | 2002
- 460
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Control of the polarity of GaN films using an Mg adsorption layerGrandjean, N. / Dussaigne, A. / Pezzagna, S. / Vennéguès, P. et al. | 2002
- 465
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Single-crystal zincblende GaN grown on GaP (100) substrate by molecular beam epitaxyKim, Min-Ho / Juang, F.S. / Hong, Y.G. / Tu, C.W. / Park, Seong-Ju et al. | 2002
- 471
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In surface segregation in InGaN/GaN quantum wellsDussaigne, A. / Damilano, B. / Grandjean, N. / Massies, J. et al. | 2003
- 476
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Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescenceDimakis, E. / Georgakilas, A. / Androulidaki, M. / Tsagaraki, K. / Kittler, G. / Kalaitzakis, F. / Cengher, D. / Bellet-Amalric, E. / Jalabert, D. / Pelekanos, N.T. et al. | 2002
- 481
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Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTsKatzer, D.S. / Storm, D.F. / Binari, S.C. / Roussos, J.A. / Shanabrook, B.V. / Glaser, E.R. et al. | 2002
- 487
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Comparative study of GaN/AlGaN MQWs grown homoepitaxially on and (0001) GaNBhattacharyya, A. / Friel, I / Iyer, S. / Chen, T.-C. / Li, W. / Cabalu, J. / Fedyunin, Y. / Ludwig, K.F. Jr. / Moustakas, T.D. / Maruska, H.-P. et al. | 2002
- 494
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Plasma-assisted MBE growth of InN films and InAlN/InN heterostructuresHigashiwaki, Masataka / Matsui, Toshiaki et al. | 2002
- 499
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MOMBE growth studies of GaN using metalorganic sources and nitrogenLi, T. / Campion, R.P. / Foxon, C.T. / Rushworth, S.A. / Smith, L.M. et al. | 2003
- 505
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Nucleation and growth of GaN observed by in situ line-of-sight mass spectrometryAverbeck, R. / Koblmueller, G. / Riechert, H. / Pongratz, P. et al. | 2002
- 510
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Arsenic incorporation in GaN during growth by molecular beam epitaxyFoxon, C.T. / Novikov, S.V. / Li, T. / Campion, R.P. / Winser, A.J. / Harrison, I. / Kappers, M.J. / Humphreys, C.J. et al. | 2002
- 515
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Digital alloy growth in mixed As/Sb heterostructuresKaspi, Ron / Donati, Giovanni P. et al. | 2002
- 521
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GaAsSb/GaAs band alignment evaluation for long-wave photonic applicationsJohnson, S.R. / Guo, C.Z. / Chaparro, S. / Sadofyev, Yu.G. / Wang, J. / Cao, Y. / Samal, N. / Xu, J. / Yu, S.Q. / Ding, D. et al. | 2002
- 526
-
Investigation of a growth interruption under an As flux at AlSb/InAs interfaces with InSb bondsSigmund, J. / Karova, K. / Miehe, G. / Saglam, M. / Hartnagel, H.L. / Fuess, H. et al. | 2002
- 532
-
Controlled n-type doping of antimonides and arsenides using GaTeBennett, Brian R. / Magno, R. / Papanicolaou, N. et al. | 2002
- 538
-
MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wellsSolov’ev, V.A. / Terent’ev, Ya.V. / Toropov, A.A. / Mel’tser, B.Ya. / Semenov, A.N. / Ivanov, S.V. / Kop’ev, P.S. / Meyer, J.R. et al. | 2002
- 543
-
Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wellsKadow, C. / Lin, H.-K. / Dahlström, M. / Rodwell, M. / Gossard, A.C. / Brar, B. / Sullivan, G. et al. | 2003
- 547
-
Structure stability of short-period InAs/AlSb superlatticesXu, Dapeng / Litvinchuk, A.P. / Wang, X. / Delaney, A. / Le, H. / Pei, S.S. et al. | 2002
- 551
-
Anisotropic structural and electronic properties of InSb/AlxIn1−xSb quantum wells grown on GaAs (001) substratesMishima, T.D. / Keay, J.C. / Goel, N. / Ball, M.A. / Chung, S.J. / Johnson, M.B. / Santos, M.B. et al. | 2002
- 556
-
InAs/AlGaSb heterostructure displacement sensors for MEMS/NEMS applicationsYamaguchi, Hiroshi / Miyashita, Sen / Hirayama, Yoshiro et al. | 2002
- 560
-
Transport properties of Sn-doped InSb thin films and applications to Hall elementOkamoto, A. / Shibasaki, I. et al. | 2003
- 565
-
Characterization of MBE grown II–VI semiconductor thin layers by X-ray interferencePrior, K.A. / Tang, X. / O’Donnell, C. / Bradford, C. / David, L. / Cavenett, B.C. et al. | 2002
- 571
-
Accuracy of the in situ determination of the CdZnTe temperature by ellipsometry before the growth of HgCdTe by MBEBadano, Giacomo / Garland, James W. / Sivananthan, S. et al. | 2002
- 576
-
PL characteristics of MBE-grown, Pb-doped ZnSe crystal layersMita, Yoh / Kuronuma, Ryoichi / Sasaki, Shoichiro / Inoue, Masanori / Maruyama, Susumu et al. | 2003
- 581
-
Growth and characterization of MgS/CdSe self-assembled quantum dotsBradford, C. / Urbaszek, B. / Funato, M. / Balocchi, A. / Graham, T.C.M. / McGhee, E.J. / Warburton, R.J. / Prior, K.A. / Cavenett, B. et al. | 2002
- 586
-
Growth and characterization of CdSe:Mn quantum dotsTang, X. / Urbaszek, B. / Graham, T.C.M. / Warburton, R.J. / Prior, K.A. / Cavenett, B.C. et al. | 2002
- 591
-
Growth of zinc blende MnS and MnS heterostructures by MBE using ZnS as a sulfur sourceDavid, L. / Bradford, C. / Tang, X. / Graham, T.C.M. / Prior, K.A. / Cavenett, B.C. et al. | 2002
- 596
-
High quality ZnTe heteroepitaxy layers using low-temperature buffer layersChang, Jiho / Godo, Kenji / Song, Junsuk / Oh, Dongcheol / Lee, Changwoo / Yao, Takafumi et al. | 2003
- 602
-
Growth conditions in molecular beam epitaxy for controlling CdSeTe epilayer compositionMatsumura, Nobuo / Sakamoto, Takuya / Saraie, Junji et al. | 2002
- 607
-
Electrical properties of heavily Al-doped ZnSe grown by molecular beam epitaxyOh, D.C. / Chang, J.H. / Takai, T. / Song, J.S. / Godo, K. / Park, Y.K. / Shindo, K. / Yao, T. et al. | 2002
- 612
-
Strong luminescence due to localized excitons in CdTe/ZnSe fractional monolayer structuresChang, Jiho / Takai, Toshiaki / Godo, Kenji / Makino, Hisao / Goto, Takenari / Yao, Takafumi et al. | 2003
- 619
-
MBE growth and characterization of A-site deficient, low-field magnetoresistance (Pr1-xSrx)yMnO3-d oriented thin filmsLiu, G. / Feng, Y. / Wang, H. / Makino, H. / Hanada, T. / Yao, T. et al. | 2003
- 619
-
MBE growth and characterization of A-site deficient, low-field magnetoresistance (Pr1−xSrx)yMnO3−δ oriented thin filmsLiu, Guojun / Feng, Yanhua / Wang, Hongmei / Makino, H. / Hanada, T. / Yao, T. et al. | 2002
- 623
-
ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxyOgata, K. / Koike, K. / Tanite, T. / Komuro, T. / Yan, F. / Sasa, S. / Inoue, M. / Yano, M. et al. | 2002
- 628
-
Doping effects in ZnO layers using Li3N as a doping sourceKo, Hang-Ju / Chen, Yefan / Hong, Soon-Ku / Yao, Takafumi et al. | 2003
- 633
-
Natural ordering of ZnO1−xSex grown by radical source MBEIwata, K. / Yamada, A. / Fons, P. / Matsubara, K. / Niki, S. et al. | 2002
- 638
-
Development of integrated heterostructures on silicon by MBEDroopad, Ravi / Yu, Zhiyi / Li, Hao / Liang, Yong / Overgaard, Corey / Demkov, Alex / Zhang, Xiaodong / Moore, Karen / Eisenbeiser, Kurt / Hu, Mike et al. | 2002
- 645
-
Advances in high κ gate dielectrics for Si and III–V semiconductorsKwo, J. / Hong, M. / Busch, B. / Muller, D.A. / Chabal, Y.J. / Kortan, A.R. / Mannaerts, J.P. / Yang, B. / Ye, P. / Gossmann, H. et al. | 2002
- 645
-
Advances in high k gate dielectrics for Si and III-V semiconductorsKwo, J. / Hong, M. / Busch, B. / Muller, D. A. / Chabal, Y. J. / Kortan, A. R. / Mannaerts, J. P. / Yang, B. / Ye, P. / Gossmann, H. et al. | 2003
- 651
-
Heavy arsenic doping of silicon by molecular beam epitaxyLiu, Xian / Tang, Qiang / Kamins, Theodore I. / Harris, James S. et al. | 2002
- 657
-
Ordered arrays of rare-earth silicide nanowires on Si(001)Ragan, Regina / Chen, Yong / Ohlberg, Douglas A.A. / Medeiros-Ribeiro, Gilberto / Williams, R.Stanley et al. | 2002
- 662
-
Nucleation of Ti-catalyzed self-assembled kinked Si nanowires grown by gas source MBETang, Qiang / Liu, Xian / Kamins, Theodore I. / Solomon, Glenn S. / Harris, James S. et al. | 2002
- 666
-
Critical thickness of self-assembled Ge quantum dot superlatticesLiu, J.L. / Wan, J. / Wang, K.L. / Yu, D.P. et al. | 2003
- 670
-
Growth of SiGe/Ge/SiGe heterostructures with ultrahigh hole mobility and their device applicationIrisawa, T. / Koh, S. / Nakagawa, K. / Shiraki, Y. et al. | 2002
- 676
-
Dynamics and surface segregation during GSMBE of Si1−yCy and Si1−x−yGexCy on the Si(001) surfacePrice, R.W. / Tok, E.S. / Liu, R. / Wee, A.T.S. / Woods, N.J. / Zhang, J. et al. | 2002
- 681
-
Characterization of epitaxial Si1−yCy layers on Si(001) grown by gas-source molecular beam epitaxyAbe, Katsuya / Yamada, Akira / Konagai, Makoto et al. | 2002
- 685
-
Relaxation enhancement of SiGe thin layers by ion implantation into Si substratesSawano, K. / Hirose, Y. / Koh, S. / Nakagawa, K. / Hattori, T. / Shiraki, Y. et al. | 2002
- 689
-
Hole transport properties of B-doped relaxed SiGe epitaxial films grown by molecular beam epitaxyKoh, Shinji / Murata, Kazuhiro / Irisawa, Toshifumi / Nakagawa, Kiyokazu / Shiraki, Yasuhiro et al. | 2002
- 693
-
Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structuresSawano, K. / Arimoto, K. / Hirose, Y. / Koh, S. / Usami, N. / Nakagawa, K. / Hattori, T. / Shiraki, Y. et al. | 2002
- 697
-
Continuous wave operation of quantum cascade lasersBeck, M. / Hofstetter, D. / Aellen, T. / Blaser, S. / Faist, J. / Oesterle, U. / Gini, E. et al. | 2002
- 701
-
Thermal behavior of GaAs/AlGaAs quantum-cascade lasers: effect of the Al content in the barrier layersOrtiz, V. / Becker, C. / Page, H. / Sirtori, C. et al. | 2003
- 707
-
Strain compensated Si/Si0.2Ge0.8 quantum cascade structures grown by low temperature molecular beam epitaxyGrützmacher, D. / Mentese, S. / Müller, E. / Diehl, L. / Sigg, H. / Campidelli, Y. / Kermarrec, O. / Bensahel, D. / Roch, T. / Stangl, J. et al. | 2002
- 718
-
InAs-based quantum cascade light emitting structures containing a double plasmon waveguideOhtani, K. / Sakuma, H. / Ohno, H. et al. | 2002
- 723
-
Material engineering for InAs/GaSb/AlSb quantum cascade light emitting devicesMarcadet, X. / Becker, C. / Garcia, M. / Prévot, I. / Renard, C. / Sirtori, C. et al. | 2002
- 729
-
InAs/InGaAs/GaAs quantum dot lasers of 1.3mm range with enhanced optical gainKovsh, A. R. / Maleev, N. A. / Zhukov, A. E. / Mikhrin, S. S. / Vasil`ev, A. P. / Semenova, E. A. / Shernyakov, Y. M. / Maximov, M. V. / Livshits, D. A. / Ustinov, V. M. et al. | 2003
- 729
-
InAs/InGaAs/GaAs quantum dot lasers of 1.3μm range with enhanced optical gainKovsh, A.R. / Maleev, N.A. / Zhukov, A.E. / Mikhrin, S.S. / Vasil’ev, A.P. / Semenova, E.A. / Shernyakov, Yu.M. / Maximov, M.V. / Livshits, D.A. / Ustinov, V.M. et al. | 2003
- 737
-
Tuning the single optical mode spontaneous emission coupling of a quantum dot in a micropost cavitySolomon, G.S. / Pelton, M. / Yamamoto, Y. et al. | 2003
- 742
-
Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3mmKrebs, R. / Deubert, S. / Reithmaier, J. P. / Forchel, A. et al. | 2003
- 742
-
Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3μmKrebs, R. / Deubert, S. / Reithmaier, J.P. / Forchel, A. et al. | 2002
- 748
-
InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0mmBoehm, G. / Ortsiefer, M. / Shau, R. / Rosskopf, J. / Lauer, C. / Maute, M. / Kohler, F. / Mederer, F. / Meyer, R. / Amann, M. C. et al. | 2003
- 748
-
InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0μmBoehm, Gerhard / Ortsiefer, Markus / Shau, Robert / Rosskopf, Juergen / Lauer, Christian / Maute, Markus / Köhler, Fabian / Mederer, Felix / Meyer, Ralf / Amann, Markus-Christian et al. | 2002
- 754
-
Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafersCengher, D. / Hatzopoulos, Z. / Gallis, S. / Deligeorgis, G. / Aperathitis, E. / Androulidaki, M. / Alexe, M. / Dragoi, V. / Kyriakis-Bitzaros, E.D. / Halkias, G. et al. | 2002
- 760
-
A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3μm lasersSpringThorpe, A.J. / Extavour, M. / Goodchild, D. / Griswold, E.M. / Smith, G. / White, J.K. / Hinzer, K. / Glew, R. / Williams, R. / Robert, F. et al. | 2002
- 760
-
A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3mm lasersSpringThorpe, A. J. / Extavour, M. / Goodchild, D. / Griswold, E. M. / Smith, G. / White, J. K. / Hinzer, K. / Glew, R. / Williams, R. / Robert, F. et al. | 2003
- 766
-
Lattice-matched Al0.95Ga0.05AsSb oxide for current confinement in InP-based long wavelength VCSELsReddy, M.H.M. / Buell, D.A. / Asano, T. / Koda, R. / Feezell, D. / Huntington, A.S. / Coldren, L.A. et al. | 2003
- 771
-
Room temperature 1.3mm emission from self-assembled GaSb/GaAs quantum dotsFarrer, I. / Murphy, M. J. / Ritchie, D. A. / Shields, A. J. et al. | 2003
- 771
-
Room temperature 1.3μm emission from self-assembled GaSb/GaAs quantum dotsFarrer, I / Murphy, M.J / Ritchie, D.A / Shields, A.J et al. | 2002
- 777
-
Experimental extract and empirical formulas of refractive indices of GaAs and AlAs at high temperature by HRXRD and optical reflectivity measurementZhang, B.Y. / Solomon, G. / Weihs, G. / Yamamoto, Y. et al. | 2002
- 782
-
The effects of (NH4)2S passivation treatments on the dark current–voltage characteristics of InGaAsSb PIN detectorsZhang, X. / Li, A.Z. / Lin, C. / Zheng, Y.L. / Xu, G.Y. / Qi, M. / Zhang, Y.G. et al. | 2002
- 787
-
Normal incidence InAs/InGaAs dots-in-well detectors with current blocking AlGaAs layerRotella, P. / Raghavan, S. / Stintz, A. / Fuchs, B. / Krishna, S. / Morath, C. / Le, D. / Kennerly, S.W. et al. | 2003
- 794
-
Template design and fabrication for low-loss orientation-patterned nonlinear AlGaAs waveguides pumped at 1.55μmYu, X. / Scaccabarozzi, L. / Levi, O. / Pinguet, T.J. / Fejer, M.M. / Harris, J.S. Jr. et al. | 2003
- 794
-
Template design and fabrication for low-loss orientation-patterned nonlinear AlGaAs waveguides pumped at 1.55mmYu, X. / Scaccabarozzi, L. / Levi, O. / Pinguet, T. J. / Fejer, M. M. / Harris Jr, J. S. et al. | 2003
- 800
-
Gas source MBE growth of TlInGaAs/InP laser diodes and their room temperature operationLee, H.J. / Fujiwara, A. / Imada, A. / Asahi, H. et al. | 2002
- 804
-
Properties of metamorphic materials and device structures on GaAs substratesHoke, W.E. / Kennedy, T.D. / Torabi, A. / Whelan, C.S. / Marsh, P.F. / Leoni, R.E. / Lardizabal, S.M. / Zhang, Y. / Jang, J.H. / Adesida, I. et al. | 2002
- 811
-
MBE growth of ALGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performancesCordier, Y. / Semond, F. / Lorenzini, P. / Grandjean, N. / Natali, F. / Damilano, B. / Massies, J. / Hoël, V. / Minko, A. / Vellas, N. et al. | 2002
- 816
-
High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxyLi, A.Z. / Chen, Y.Q. / Chen, J.X. / Qi, M. / Liu, X.C. / Chen, J. / Wang, R.M. / Wang, W.L. / Li, W.X. et al. | 2003
- 822
-
Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAsCordier, Y. / Lorenzini, P. / Chauveau, J.-M. / Ferré, D. / Androussi, Y. / DiPersio, J. / Vignaud, D. / Codron, J.-L. et al. | 2002
- 827
-
High indium metamorphic HEMT on a GaAs substrateHoke, W.E. / Kennedy, T.D. / Torabi, A. / Whelan, C.S. / Marsh, P.F. / Leoni, R.E. / Xu, C. / Hsieh, K.C. et al. | 2002
- 832
-
Growth of shallow InAs HEMTs with metamorphic bufferHeyn, Ch. / Mendach, S. / Löhr, S. / Beyer, S. / Schnüll, S. / Hansen, W. et al. | 2002
- 837
-
Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectricYang, B / Ye, P.D / Kwo, J / Frei, M.R / Gossmann, H.-J.L / Mannaerts, J.P / Sergent, M / Hong, M / Ng, K / Bude, J et al. | 2002
- 843
-
V-grooved InGaAs quantum-wire FET fabricated under an As2 flux in molecular-beam epitaxySugaya, T. / Jang, K.-Y. / Wada, T. / Sato, A. / Ogura, M. / Komori, K. et al. | 2003
- 848
-
Molecular beam epitaxial growth and characterization of InP/GaAsSb/InP double heterojunction bipolar transistorsRajavel, R.D. / Hussain, T. / Montes, M.C. / Sawins, M.W. / Thomas, S. III / Chow, D.H. et al. | 2002
- 852
-
Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxyAverett, K.L. / Wu, X. / Koch, M.W. / Wicks, G.W. et al. | 2002
- 858
-
Author Index| 2003
- 873
-
Subject Index| 2003
- ii
-
Editorial Board| 2003
- ix
-
Editor's Preface| 2003
- vii
-
Conference Information| 2003
- xi
-
Contents| 2003
- xxi
-
Photo 1: MBE-XII Conference| 2003
- xxii
-
Photo 1: Night Skyline San Francisco| 2003