AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas (English)
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In:
Journal of Crystal Growth
;
310
, 23
;
4927-4931
;
2008
-
ISSN:
- Article (Journal) / Electronic Resource
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Title:AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas
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Contributors:Gautier, S. ( author ) / Aggerstam, T. ( author ) / Pinos, A. ( author ) / Marcinkevičius, S. ( author ) / Liu, K. ( author ) / Shur, M. ( author ) / O’Malley, S.M. ( author ) / Sirenko, A.A. ( author ) / Djebbour, Z. ( author ) / Migan-Dubois, A. ( author )
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Published in:Journal of Crystal Growth ; 310, 23 ; 4927-4931
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Publisher:
- New search for: Elsevier B.V.
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Publication date:2008-01-01
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Size:5 pages
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ISSN:
-
DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 310, Issue 23
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 4709
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Editorial introductionMullin, Brian / Irvine, Stuart / Scholz, Ferdinand / Ougazzaden, Abdallah et al. | 2008
- 4710
-
Contributing people to ICMOVPE XIV| 2008
- 4712
-
Development and characterisation of improved ruthenium dopant sourcesRushworth, S. / Odedra, R. / Viswanathan, P. / Dosanjh, S. / Lealman, I. et al. | 2008
- 4715
-
Tailor-made precursors for the deposition of Sb-containing materials by the MOCVD processSchuchmann, Daniella / Schwartz, Marcel / Schulz, Stephan / Seemayer, Andreas / Wandelt, Klaus et al. | 2008
- 4720
-
Vapor pressure of germanium precursorsPangrác, J. / Fulem, M. / Hulicius, E. / Melichar, K. / Šimeček, T. / Růžička, K. / Morávek, P. / Růžička, V. / Rushworth, S.A. et al. | 2008
- 4724
-
Novel technique for monitoring of MOVPE processesVolkov, P.V. / Goryunov, A.V. / Daniltsev, V.M. / Luk’yanov, A.Yu. / Pryakhin, D.A. / Tertyshnik, A.D. / Khrykin, O.I. / Shashkin, V.I. et al. | 2008
- 4727
-
In-situ monitoring of the p- and n-type doping in AlGaInPKrahmer, C. / Behres, A. / Schubert, M. / Streubel, K. et al. | 2008
- 4731
-
Non-linear surface reaction kinetics in GaAs selective area MOVPESong, Haizheng / Wang, Yunpeng / Sugiyama, Masakazu / Nakano, Yoshiaki / Shimogaki, Yukihiro et al. | 2008
- 4736
-
Kinetic analysis of surface adsorption layer for InGaAsP-related binary materials using in situ RASDeura, Momoko / Shimogaki, Yukihiro / Nakano, Yoshiaki / Sugiyama, Masakazu et al. | 2008
- 4741
-
Micro-Raman for compositions characterization of selective area growth of AlxGayIn1−x−yAs materials by metal-organic vapor-phase epitaxyOuld Saad Hamady, S. / Dupuis, N. / Décobert, J. / Ougazzaden, A. et al. | 2008
- 4747
-
Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopyLobo, Neysha / Kadir, Abdul / Laskar, Masihhur R. / Shah, A.P. / Gokhale, M.R. / Rahman, A.A. / Arora, B.M. / Narasimhan, K.L. / Bhattacharya, Arnab et al. | 2008
- 4751
-
Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal–organic vapor phase epitaxyKremzow, Raimund / Pristovsek, Markus / Kneissl, Michael et al. | 2008
- 4754
-
In-situ etching of GaAs/AlxGa1−xAs by CBr4Maaßdorf, Andre / Weyers, Markus et al. | 2008
- 4757
-
III–V epitaxy on Si for photonics applicationsYonezu, Hiroo / Furukawa, Yuzo / Wakahara, Akihiro et al. | 2008
- 4763
-
Ways to quantitatively detect antiphase disorder in GaP films grown on Si(001) by transmission electron microscopyNémeth, I. / Kunert, B. / Stolz, W. / Volz, K. et al. | 2008
- 4768
-
Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on SiDeura, Momoko / Hoshii, Takuya / Takenaka, Mitsuru / Takagi, Shinichi / Nakano, Yoshiaki / Sugiyama, Masakazu et al. | 2008
- 4772
-
Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxyJha, Smita / Song, Xueyan / Babcock, S.E. / Kuech, T.F. / Wheeler, Dane / Wu, Bin / Fay, P. / Seabaugh, Alan et al. | 2008
- 4776
-
Monolithic integration of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) silicon substrate by MOVPEKunert, B. / Zinnkann, S. / Volz, K. / Stolz, W. et al. | 2008
- 4780
-
Characterization of high-purity arsine and gallium arsenide epilayers grown by MOCVDFeng, Jun / Clement, Ryan / Raynor, Mark et al. | 2008
- 4786
-
Ambience effects in annealing on improvements of optical properties of GaInNAs/GaAs single quantum wellsIshizuka, Takashi / Doi, Hideyuki / Shimazu, Mitsuru / Takagishi, Shigenori / Yaginuma, Ryuta / Nakayama, Masaaki et al. | 2008
- 4790
-
Isoelectronic nitrogen δ-doping in GaP and single-photon emission from individual nitrogen pairsSakuma, Yoshiki / Ikezawa, Michio / Watanabe, Masato / Masumoto, Yasuaki et al. | 2008
- 4790
-
Isoelectronic nitrogen d-doping in GaP and single-photon emission from individual nitrogen pairsSakuma, Y. / Ikezawa, M. / Watanabe, M. / Masumoto, Y. et al. | 2008
- 4795
-
Demonstration of planar thick InP layers by selective MOVPEDupuis, N. / Décobert, J. / Lagrée, P.-Y. / Lagay, N. / Carpentier, D. / Alexandre, F. et al. | 2008
- 4799
-
Memory effect of Ge in III–V semiconductorsWelser, E. / Guter, W. / Wekkeli, A. / Dimroth, F. et al. | 2008
- 4803
-
Analysis of germanium epiready wafers for III–V heteroepitaxyRey-Stolle, Ignacio / Barrigón, Enrique / Galiana, Beatriz / Algora, Carlos et al. | 2008
- 4808
-
In situ passivation of GaAs surface with aluminum oxide with MOVPETerada, Yuki / Deura, Momoko / Shimogaki, Yukihiro / Sugiyama, Masakazu / Nakano, Yoshiaki et al. | 2008
- 4813
-
Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4Décobert, J. / Lagay, N. / Thevenard, B. et al. | 2008
- 4818
-
Increased single-photon emission from InP/AlGaInP quantum dots grown on AlGaAs distributed Bragg reflectorsRoßbach, R. / Schulz, W.-M. / Reischle, M. / Beirne, G.J. / Jetter, M. / Michler, P. et al. | 2008
- 4821
-
InxGa1−xAs/InP selective area metal-organic vapor phase epitaxy for non-magnetic semiconductor spintronicsAkabori, Masashi / Guzenko, Vitaliy A. / Schäpers, Thomas / Hardtdegen, Hilde et al. | 2008
- 4826
-
MOVPE growth of antimonide-containing alloy materials for long wavelength applicationsKuech, T.F. / Khandekar, A.A. / Rathi, M. / Mawst, L.J. / Huang, J.Y.T. / Song, Xueyan / Babcock, S.E. / Meyer, J.R. / Vurgaftman, I. et al. | 2008
- 4831
-
Characterization of GaSb thin films from tailor-made single-source precursorsSeemayer, Andreas / Hommes, Alexander / Hümann, Sascha / Schulz, Stephan / Wandelt, Klaus et al. | 2008
- 4835
-
Growth of various antimony-containing alloys by MOVPEGrasse, Christian / Meyer, Ralf / Breuer, Uwe / Böhm, Gerhard / Amann, Markus-Christian et al. | 2008
- 4839
-
MOVPE growth of Ga(As)SbN on GaSb substratesHuang, J.Y.T. / Mawst, L.J. / Jha, S. / Kuech, T.F. / Wang, D. / Shterengas, L. / Belenky, G. / Meyer, J.R. / Vurgaftman, I. et al. | 2008
- 4843
-
Dislocation reduction of GaSb on GaAs by metalorganic chemical vapor deposition with epitaxial lateral overgrowthZaima, Kotaro / Hashimoto, Rei / Ezaki, Mizunori / Nishioka, Masao / Arakawa, Yasuhiko et al. | 2008
- 4846
-
Type II GaAsxSb1−x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solutionMoiseev, K.D. / Romanov, V.V. / Voronina, T.I. / Lagunova, T.S. / Mikhailova, M.P. / Yakovlev, Yu.P. et al. | 2008
- 4850
-
Temperature effect on the growth of strained GaAs1−ySby/GaAs (y>0.4) quantum wells by MOVPESu, Y.K. / Wan, C.T. / Chuang, R.W. / Huang, C.Y. / Chen, W.C. / Wang, Y.S. / Yu, H.C. et al. | 2008
- 4854
-
Improving photoluminescence of highly strained 1.32mm GaAsSb/GaAs multiple quantum wells grown on misorientation substrateWan, C. T. / Su, Y. K. / Chuang, R. W. / Huang, C. Y. / Wang, Y. S. / Chen, W. C. / Yu, H. C. et al. | 2008
- 4854
-
Improving photoluminescence of highly strained 1.32μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrateWan, Cheng-Tien / Su, Yan-Kuin / Chuang, Ricky W. / Huang, Chun-Yuan / Wang, Yi-Sin / Chen, Wei-Cheng / Yu, Hsin-Chieh et al. | 2008
- 4858
-
Growth of InAsSb/InPSb heterojunctions for mid-IR detector applicationsPitts, O.J. / Lackner, D. / Cherng, Y.T. / Watkins, S.P. et al. | 2008
- 4862
-
Hydrogen effects in III-nitride MOVPEYakovlev, E.V. / Talalaev, R.A. / Segal, A.S. / Lobanova, A.V. / Lundin, W.V. / Zavarin, E.E. / Sinitsyn, M.A. / Tsatsulnikov, A.F. / Nikolaev, A.E. et al. | 2008
- 4867
-
Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited masksHertkorn, J. / Lipski, F. / Brückner, P. / Wunderer, T. / Thapa, S.B. / Scholz, F. / Chuvilin, A. / Kaiser, U. / Beer, M. / Zweck, J. et al. | 2008
- 4867
-
Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited masksHertkorn, J. et al. | 2008
- 4867
-
Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited Formula Not Shown masksHertkorn, J. / Lipski, F. / Bruckner, P. / Wunderer, T. / Thapa, S. B. / Scholz, F. / Chuvilin, A. / Kaiser, U. / Beer, M. / Zweck, J. et al. | 2008
- 4871
-
High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor depositionChen, Jun-Rong / Ling, Shih-Chun / Hung, Chin-Tsang / Ko, Tsung-Shine / Lu, Tien-Chang / Kuo, Hao-Chung / Wang, Shing-Chung et al. | 2008
- 4876
-
The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substratesCaban, Piotr / Kosciewicz, Kinga / Strupinski, Wlodek / Wojcik, Marek / Gaca, Jaroslaw / Szmidt, Jan / Ozturk, Mustafa / Ozbay, Ekmel et al. | 2008
- 4880
-
Modulated precursor flow epitaxial growth of ternary AlGaN by metalorganic chemical vapor depositionKim, Hee Jin / Choi, Suk / Yoo, Dongwon / Ryou, Jae-Hyun / Dupuis, Russell D. et al. | 2008
- 4885
-
Growth of crack-free AlGaN on selective-area-growth GaNMiyake, H. / Masuda, N. / Ogawahara, Y. / Narukawa, M. / Hiramatsu, K. / Ezaki, T. / Kuwano, N. et al. | 2008
- 4888
-
Growth and characterization of unintentionally doped GaN grown on silicon(111) substratesLeys, M. / Cheng, Kai / Derluyn, J. / Degroote, S. / Germain, M. / Borghs, G. / Taylor, C.A. / Dawson, P. et al. | 2008
- 4891
-
Properties of MOVPE GaN grown on ZnO deposited on Si(001) and Si(111) substratesPaszkiewicz, R. / Paszkiewicz, B. / Wosko, M. / Szyszka, A. / Marciniak, L. / Prażmowska, J. / Macherzyński, W. / Serafińczuk, J. / Kozłowski, J. / Tlaczala, M. et al. | 2008
- 4896
-
Comparison of electrical properties in GaN grown on Si(111) and c-sapphire substrate by MOVPEIto, Tsuneo / Nomura, Yukiyasu / Selvaraj, S. Lawrence / Egawa, Takashi et al. | 2008
- 4900
-
MOCVD growth of GaN on porous silicon substratesIshikawa, Hiroyasu / Shimanaka, Keita / Tokura, Fumiyuki / Hayashi, Yasuhiko / Hara, Yosuke / Nakanishi, Masami et al. | 2008
- 4904
-
MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applicationsYu, Hongbo / Wang, Shenjie / Li, Nola / Fenwick, William / Melton, Andrew / Klein, B. / Ferguson, Ian et al. | 2008
- 4908
-
Effect of an Al2O3 transition layer on InGaN on ZnO substrates by organometallic vapor-phase epitaxyLi, Nola / Wang, Shen-Jie / Huang, Chung-Lung / Feng, Zhe Chuan / Valencia, Adriana / Nause, Jeff / Summers, Christopher / Ferguson, Ian et al. | 2008
- 4913
-
The critical thickness of InGaN on (0001)GaNLeyer, M. / Stellmach, J. / Meissner, Ch. / Pristovsek, M. / Kneissl, M. et al. | 2008
- 4916
-
Emission and microstructural behaviors in the InGaN/GaN MQWs with the p-GaN layers grown at different growth temperaturesKong, Bo Hyun / Han, Won Suk / Cho, Hyung Koun / Kim, Mi Yang / Choi, Rak Jun / Kim, Bae Kyun et al. | 2008
- 4920
-
Control of stress and crystalline quality in GaInN films used for green emittersIwaya, Motoaki / Miura, Aya / Senda, Ryota / Nagai, Tetsuya / Kawashima, Takeshi / Iida, Daisuke / Kamiyama, Satoshi / Amano, Hiroshi / Akasaki, Isamu et al. | 2008
- 4923
-
Strain compensated AlGaN/GaN-Bragg-reflectors with high Al content grown by MOVPEDartsch, H. / Figge, S. / Aschenbrenner, T. / Pretorius, A. / Rosenauer, A. / Hommel, D. et al. | 2008
- 4927
-
AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gasGautier, S. / Aggerstam, T. / Pinos, A. / Marcinkevičius, S. / Liu, K. / Shur, M. / O’Malley, S.M. / Sirenko, A.A. / Djebbour, Z. / Migan-Dubois, A. et al. | 2008
- 4932
-
Effect of the AIN nucleation layer growth on AlN material qualityReentilä, O. / Brunner, F. / Knauer, A. / Mogilatenko, A. / Neumann, W. / Protzmann, H. / Heuken, M. / Kneissl, M. / Weyers, M. / Tränkle, G. et al. | 2008
- 4935
-
Growth conditions and surface morphology of AlN MOVPELobanova, A.V. / Yakovlev, E.V. / Talalaev, R.A / Thapa, S.B. / Scholz, F. et al. | 2008
- 4939
-
Growth and studies of Si-doped AlN layersThapa, S.B. / Hertkorn, J. / Scholz, F. / Prinz, G.M. / Leute, R.A.R. / Feneberg, M. / Thonke, K. / Sauer, R. / Klein, O. / Biskupek, J. et al. | 2008
- 4942
-
Microstructure of InN epilayers deposited in a close-coupled showerhead reactorGanguli, Tapas / Kadir, Abdul / Gokhale, Mahesh / Kumar, Ravi / Shah, A.P. / Arora, B.M. / Bhattacharya, Arnab et al. | 2008
- 4947
-
Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77eV) InN grown on GaN/sapphire using pulsed MOVPEJamil, Muhammad / Zhao, Hongping / Higgins, John B. / Tansu, Nelson et al. | 2008
- 4954
-
Improvements in the crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressureMurakami, Hisashi / Cho, Hyun-Chol / Kumagai, Yoshinao / Koukitu, Akinori et al. | 2008
- 4959
-
Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxyMeissner, Christian / Ploch, Simon / Leyer, Martin / Pristovsek, Markus / Kneissl, Michael et al. | 2008
- 4963
-
Metal-organic molecular beam epitaxy growth of InN films on highly orientated TCO/Si(100) substratesKuo, Shou-Yi / Chen, Wei-Chun / Hsiao, Chien-Nan / Lai, Fang-I et al. | 2008
- 4968
-
Effects of off-axis GaN substrates on optical properties of m-plane InGaN/GaN light-emitting diodesYamada, Hisashi / Iso, Kenji / Masui, Hisashi / Saito, Makoto / Fujito, Kenji / DenBaars, Steven P. / Nakamura, Shuji et al. | 2008
- 4972
-
Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor depositionKo, T.S. / Wang, T.C. / Huang, H.M. / Chen, J.R. / Chen, H.G. / Chu, C.P. / Lu, T.C. / Kuo, H.C. / Wang, S.C. et al. | 2008
- 4976
-
Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substratesMauder, C. / Rahimzadeh Khoshroo, L. / Behmenburg, H. / Wen, T.C. / Dikme, Y. / Rzheutskii, M.V. / Yablonskii, G.P. / Woitok, J. / Chou, M.M.C. / Heuken, M. et al. | 2008
- 4979
-
Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire by MOVPEMiyagawa, R. / Narukawa, M. / Ma, B. / Miyake, H. / Hiramatsu, K. et al. | 2008
- 4983
-
Properties of non-polar a-plane GaN/AlGaN quantum wellsKappers, M.J. / Hollander, J.L. / Johnston, C.F. / McAleese, C. / Sridhara Rao, D.V. / Sanchez, A.M. / Humphreys, C.J. / Badcock, T.J. / Dawson, P. et al. | 2008
- 4987
-
Growth of Formula Not Shown QW structures with high indium concentration on Formula Not Shown -plane and Formula Not Shown -plane surfaces by MOVPEJonen, H. / Rossow, U. / Langer, T. / Drager, A. / Hoffmann, L. / Bremers, H. / Hangleiter, A. / Bertram, F. / Metzner, S. / Christen, J. et al. | 2008
- 4987
-
Growth of QW structures with high indium concentration on -plane and -plane surfaces by MOVPEJönen, H. / Rossow, U. / Langer, T. / Dräger, A. / Hoffmann, L. / Bremers, H. / Hangleiter, A. / Bertram, F. / Metzner, S. / Christen, J. et al. | 2008
- 4987
-
Growth of QW structures with high indium concentration on -plane and -plane surfaces by MOVPEJönen, H. et al. | 2008
- 4992
-
Photoluminescence and structural analysis of a-plane InGaN layersAschenbrenner, T. / Figge, S. / Schowalter, M. / Rosenauer, A. / Hommel, D. et al. | 2008
- 4996
-
Control of p-type conduction in a-plane Ga1−xInxN (0<x<0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxyIida, Daisuke / Iwaya, Motoaki / Kamiyama, Satoshi / Amano, Hiroshi / Akasaki, Isamu et al. | 2008
- 4996
-
Control of p-type conduction in a-plane Ga1-xInxN (0x<0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxyIida, D. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. et al. | 2008
- 4999
-
Growth of non-polar (112¯0)GaN on a patterned (110)Si substrate by selective MOVPETanikawa, T. / Rudolph, D. / Hikosaka, T. / Honda, Y. / Yamaguchi, M. / Sawaki, N. et al. | 2008
- 5003
-
Growth of Ga-doped ZnO by MOVPE using diisopropylzinc and tertiary butanolNishimoto, Naoki / Yamamae, Takahiro / Kaku, Takashi / Matsuo, Yuki / Senthilkumar, Kasilingam / Senthilkumar, Obuliraj / Okamoto, Jun / Yamada, Yasuji / Kubo, Shugo / Fujita, Yasuhisa et al. | 2008
- 5007
-
Step-flow growth of homoepitaxial ZnO thin films by ultrasonic spray-assisted MOVPENishinaka, Hiroyuki / Fujita, Shizuo et al. | 2008
- 5011
-
Effects of N doping on ZnO thin films grown by MOVPEZaidi, Tahir / Fenwick, William E. / Melton, Andrew / Li, Nola / Gupta, Shalini / Yu, Hongbo / Ougazzaden, Abdallah / Ferguson, Ian et al. | 2008
- 5016
-
Enhancement of electron mobility in ZnO layers with applying ultrasonic spray-assisted MOVPE and buffer layersKamada, Yudai / Nishinaka, Hiroyuki / Kameyama, Naoki / Fujita, Shizuo et al. | 2008
- 5020
-
Structural and optical properties of polar and non-polar ZnO films grown by MOVPEZhu, J.J. / Aaltonen, T. / Venkatachalapathy, V. / Galeckas, A. / Kuznetsov, A. Yu. et al. | 2008
- 5025
-
Growth and characterization of GaN:Mn layers by MOVPESofer, Zdenek / Sedmidubský, David / Stejskal, Josef / Hejtmánek, Jiří / Maryško, Miroslav / Jurek, Karel / Václavů, Michal / Havránek, Vladimír / Macková, Anna et al. | 2008
- 5028
-
Growth and characterization of manganese-doped InAsPPristovsek, M. / Meißner, Ch. / Kneissl, M. / Jakomin, R. / Vantaggio, S. / Tarricone, L. et al. | 2008
- 5032
-
MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applicationsGupta, S. / Fenwick, W.E. / Melton, A. / Zaidi, T. / Yu, H. / Rengarajan, V. / Nause, J. / Ougazzaden, A. / Ferguson, I.T. et al. | 2008
- 5039
-
Highly spin-polarized electron photocathode based on GaAs–GaAsP superlattice grown on mosaic-structured buffer layerJin, Xiuguang / Maeda, Yuya / Saka, Takashi / Tanioku, Masatoshi / Fuchi, Shingo / Ujihara, Toru / Takeda, Yoshikazu / Yamamoto, Naoto / Nakagawa, Yasuhide / Mano, Atsushi et al. | 2008
- 5044
-
Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPEKobayashi, Y. / Akasaka, T. et al. | 2008
- 5048
-
Hexagonal boron nitride grown by MOVPEKobayashi, Y. / Akasaka, T. / Makimoto, T. et al. | 2008
- 5053
-
Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applicationsLongo, M. / Salicio, O. / Wiemer, C. / Fallica, R. / Molle, A. / Fanciulli, M. / Giesen, C. / Seitzinger, B. / Baumann, P.K. / Heuken, M. et al. | 2008
- 5058
-
Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPEOrsal, G. / Maloufi, N. / Gautier, S. / Alnot, M. / Sirenko, A.A. / Bouchaour, M. / Ougazzaden, A. et al. | 2008
- 5063
-
Computational intelligence applied to the growth of quantum dotsSingulani, Anderson P. / Vilela Neto, Omar P. / Aurélio Pacheco, Marco C. / Vellasco, Marley B.R. / Pires, Maurício P. / Souza, Patrícia L. et al. | 2008
- 5066
-
Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dotsStrittmatter, A. / Germann, T.D. / Kettler, Th. / Posilovic, K. / Pohl, J. / Pohl, U.W. / Bimberg, D. et al. | 2008
- 5069
-
InAs/InP QDs with GaxIn1−xAs cap layer by a double-cap procedure using MOVPE selective area growthAkaishi, M. / Okawa, T. / Saito, Y. / Shimomura, K. et al. | 2008
- 5073
-
Wideband wavelength electroluminescence from InAs/InP QDs using double-cap procedure by MOVPE selective area growthSaito, Y. / Okawa, T. / Akaishi, M. / Shimomura, K. et al. | 2008
- 5077
-
InAs island-to-ring transformation by a partial capping layerAierken, A. / Hakkarainen, T. / Riikonen, J. / Sopanen, M. et al. | 2008
- 5081
-
Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dotsHospodková, A. / Pangrác, J. / Oswald, J. / Hulicius, E. / Kuldová, K. / Vyskočil, J. / Melichar, K. / Šimeček, T. et al. | 2008
- 5085
-
High-density InAs quantum dots on GaNAs buffer layerSuzuki, R. / Miyamoto, T. / Sengoku, T. / Koyama, F. et al. | 2008
- 5089
-
Growth of red InP/GaInP quantum dots on a low density InAs/GaAs island seed layer by MOVPERoßbach, R. / Schulz, W.-M. / Reischle, M. / Beirne, G.J. / Hermannstädter, C. / Jetter, M. / Michler, P. et al. | 2008
- 5093
-
Selective-area growth of GaAs and InAs nanowires—homo- and heteroepitaxy using templatesPaetzelt, H. / Gottschalch, V. / Bauer, J. / Benndorf, G. / Wagner, G. et al. | 2008
- 5093
-
Selective-area growth of GaAs and InAs nanowires—homo- and heteroepitaxy using templatesPaetzelt, H. et al. | 2008
- 5093
-
Selective-area growth of GaAs and InAs nanowires-homo- and heteroepitaxy using Formula Not Shown templatesPaetzelt, H. / Gottschalch, V. / Bauer, J. / Benndorf, G. / Wagner, G. et al. | 2008
- 5098
-
Red to orange electroluminescence from InP/AlGaInP quantum dots at room temperatureRoßbach, R. / Schulz, W.-M. / Eichfelder, M. / Reischle, M. / Beirne, G.J. / Jetter, M. / Michler, P. et al. | 2008
- 5102
-
Effects of growth conditions on the crystal structure of gold-seeded GaP nanowiresJohansson, Jonas / Karlsson, Lisa S. / Dick, Kimberly A. / Bolinsson, Jessica / Wacaser, Brent A. / Deppert, Knut / Samuelson, Lars et al. | 2008
- 5106
-
VLS growth of GaAs/(InGa)As/GaAs axial double-heterostructure nanowires by MOVPEBauer, J. / Gottschalch, V. / Paetzelt, H. / Wagner, G. et al. | 2008
- 5111
-
SA-MOVPE of InGaAs nanowires and their compositions studied by micro-PL measurementSato, Takuya / Kobayashi, Yasunori / Motohisa, Junichi / Hara, Shinjiro / Fukui, Takashi et al. | 2008
- 5114
-
Luminescence of GaAs/AlGaAs core–shell nanowires grown by MOVPE using tertiarybutylarsinePrete, P. / Marzo, F. / Paiano, P. / Lovergine, N. / Salviati, G. / Lazzarini, L. / Sekiguchi, T. et al. | 2008
- 5119
-
Characterization of GaSb nanowires grown by MOVPEJeppsson, Mattias / Dick, Kimberly A. / Nilsson, Henrik A. / Sköld, Niklas / Wagner, Jakob B. / Caroff, Philippe / Wernersson, Lars-Erik et al. | 2008
- 5123
-
VLS growth of GaN nanowires on various substratesGottschalch, V. / Wagner, G. / Bauer, J. / Paetzelt, H. / Shirnow, M. et al. | 2008
- 5129
-
Catalyst-free growth and characterization of gallium nitride nanorodsKuo, Shou-Yi / Lai, Fang-I. / Chen, Wei-Chun / Hsiao, Chien-Nan et al. | 2008
- 5134
-
Growth and characterization of ZnO nanostructures on sapphire substratesMergenthaler, K. / Gottschalch, V. / Bauer, J. / Paetzelt, H. / Wagner, G. et al. | 2008
- 5139
-
MOVPE growth of GaN around ZnO nanopillarsThapa, S.B. / Hertkorn, J. / Wunderer, T. / Lipski, F. / Scholz, F. / Reiser, A. / Xie, Y. / Feneberg, M. / Thonke, K. / Sauer, R. et al. | 2008
- 5143
-
Temperature and current dependences of electroluminescence from InGaN/GaN multiple quantum wellsLee, Jiunn-Chyi / Wu, Ya-Fen / Wang, Yi-Ping / Nee, Tzer-En et al. | 2008
- 5147
-
Doping control and evaluation of pn-junction LED in GaPN grown by OMVPEHatakenaka, Susumu / Nakanishi, Yoshiyuki / Wakahara, Akihiro / Furukawa, Yuzo / Okada, Hiroshi et al. | 2008
- 5151
-
Formation of textured sapphire substrates by self-arrangement process and wet etching for InGaAlN LEDsSakharov, A.V. / Lundin, W.V. / Zavarin, E.E. / Sinitsyn, M.A. / Nikolaev, A.E. / Lundina, E.Yu. / Tsatsulnikov, A.F. et al. | 2008
- 5154
-
Enhanced electroluminescence in 405nm InGaN/GaN LEDs by optimized electron blocking layerSvensk, O. / Törmä, P.T. / Suihkonen, S. / Ali, M. / Lipsanen, H. / Sopanen, M. / Odnoblyudov, M.A. / Bougrov, V.E. et al. | 2008
- 5158
-
Carrier injection efficiency in nitride LEDsLee, Dong S. / Byrnes, Daniel / Parekh, Aniruddh / Ting, Steve / Quinn, William et al. | 2008
- 5162
-
Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDsTörmä, P.T. / Svensk, O. / Ali, M. / Suihkonen, S. / Sopanen, M. / Odnoblyudov, M.A. / Bougrov, V.E. et al. | 2008
- 5166
-
Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor depositionLiu, Jianping / Ryou, Jae-Hyun / Lochner, Zachary / Limb, Jae / Yoo, Dongwon / Dupuis, Russell D. / Wu, Zhihao / Fischer, Alec M. / Ponce, Fernando A. et al. | 2008
- 5170
-
Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrateChiu, C.H. / Li, Zhen-Yu / Chao, C.L. / Lo, M.H. / Kuo, H.C. / Yu, P.C. / Lu, T.C. / Wang, S.C. / Lau, K.M. / Cheng, S.J. et al. | 2008
- 5175
-
Growth parameter optimization of the GaInP/AlGaInP active zone of 635nm red laser diodesKaspari, Christian / Zorn, Martin / Weyers, Markus / Erbert, Götz et al. | 2008
- 5178
-
1150-nm wavelength InGaAs/GaAs VCSELs incorporating regrown tunnel junctionsMereuta, Alexandru / Iakovlev, Vladimir / Caliman, Andrei / Mutter, Lukas / Sirbu, Alexei / Kapon, Eli et al. | 2008
- 5182
-
Quantum-dot semiconductor disk lasersGermann, T.D. / Strittmatter, A. / Pohl, U.W. / Bimberg, D. / Rautiainen, J. / Guina, M. / Okhotnikov, O.G. et al. | 2008
- 5187
-
Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPEZorn, M. / Klopp, P. / Saas, F. / Ginolas, A. / Krüger, O. / Griebner, U. / Weyers, M. et al. | 2008
- 5191
-
OMVPE growth of highly strain-balanced GaInAs/AlInAs/InP for quantum cascade lasersWang, C.A. / Huang, R.K. / Goyal, A. / Donnelly, J.P. / Calawa, D.R. / Cann, S.G. / O’Donnell, F. / Plant, J.J. / Missaggia, L.J. / Turner, G.W. et al. | 2008
- 5198
-
MOCVD of thin film photovoltaic solar cells—Next-generation production technology?Irvine, S.J.C. / Barrioz, V. / Lamb, D. / Jones, E.W. / Rowlands-Jones, R.L. et al. | 2008
- 5204
-
Very high efficiency triple junction solar cells grown by MOVPEStan, M. / Aiken, D. / Cho, B. / Cornfeld, A. / Diaz, J. / Ley, V. / Korostyshevsky, A. / Patel, P. / Sharps, P. / Varghese, T. et al. | 2008
- 5209
-
Influence of GaInP ordering on the electronic quality of concentrator solar cellsGarcia, I. / Rey-Stolle, I. / Algora, C. / Stolz, W. / Volz, K. et al. | 2008
- 5214
-
Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal–organic vapor phase epitaxyKomiyama, Shigetoshi / Noguchi, Kazuyuki / Suzuki, Shota / Honda, Tohru et al. | 2008
- 5217
-
Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodesDupuis, Russell D. / Ryou, Jae-Hyun / Shen, Shyh-Chiang / Yoder, P. Douglas / Zhang, Yun / Kim, Hee Jin / Choi, Suk / Lochner, Zachary et al. | 2008
- 5223
-
Hydrogen-related defects in InGaP/GaAs heterojunction bipolar transistorsYamada, Hisashi / Fukuhara, Noboru / Hata, Masahiko / Akimoto, Katsuhiro et al. | 2008
- 5227
-
AlGaAs/GaAs heterojunction phototransistor with a double delta-doped base grown by AP MOVPEŚciana, Beata / Zborowska-Lindert, Iwona / Radziewicz, Damian / Boratyński, Bogusław / Tłaczała, Marek / Kováč, Jaroslav / Srnanek, Rudolf / Škriniarová, Jaroslava / Florovič, Martin et al. | 2008
- 5232
-
GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT applicationdi Forte Poisson, M.-A. / Magis, M. / Tordjman, M. / Di Persio, J. / Langer, R. / Toth, L. / Pecz, B. / Guziewicz, M. / Thorpe, J. / Aubry, R. et al. | 2008
- I
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Author index ICMOVPE-14| 2008
- iii
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Contents of The 14th International conference on Metalorganic Vapor Phase Epitax (ICMOVPE-XIV)| 2008
- XI
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Subject index ICMOVPE-14| 2008