Properties of nitrogen-doped titanium oxides (English)
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In:
Journal of Crystal Growth
;
350
, 1
;
11-16
;
2011
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Properties of nitrogen-doped titanium oxides
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Contributors:David, D.G.F. ( author ) / Guerreiro, J. ( author ) / da Silva, M.V.S. ( author ) / Castro Meira, M.V. ( author ) / Bargiela, P. ( author ) / de Almeida, J.S. ( author ) / Freitas, J.A. Jr. ( author ) / Ferreira da Silva, A. ( author )
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Published in:Journal of Crystal Growth ; 350, 1 ; 11-16
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Publisher:
- New search for: Elsevier B.V.
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Publication date:2011-01-01
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Size:6 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 350, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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PrefaceFreitas, Jaime A. Jr. / Sitar, Zlatko / Kumagai, Yoshinao / Meissener, Elke et al. | 2012
- 2
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Development of a novel in situ monitoring technology for ammonothermal reactorsAlt, Nicolas S.A. / Meissner, Elke / Schluecker, Eberhard et al. | 2011
- 5
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Multi feed seed (MFS) high pressure crystallization of 1–2in GaNBockowski, M. / Grzegory, I. / Lucznik, B. / Sochacki, T. / Nowak, G. / Sadovyi, B. / Strak, P. / Kamler, G. / Litwin-Staszewska, E. / Porowski, S. et al. | 2011
- 11
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Properties of nitrogen-doped titanium oxidesDavid, D.G.F. / Guerreiro, J. / da Silva, M.V.S. / Castro Meira, M.V. / Bargiela, P. / de Almeida, J.S. / Freitas, J.A. Jr. / Ferreira da Silva, A. et al. | 2011
- 17
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Free exciton absorption in Ga1−xZnxN1−xOx alloysDou, Maofeng / Baldissera, Gustavo / Persson, Clas et al. | 2011
- 21
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Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaNFeigelson, B.N. / Anderson, T.J. / Abraham, M. / Freitas, J.A. / Hite, J.K. / Eddy, C.R. / Kub, F.J. et al. | 2011
- 27
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Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxyFreitas, J.A. Jr. / Mastro, M.A. / Glaser, E.R. / Garces, N.Y. / Lee, S.K. / Chung, J.H. / Oh, D.K. / Shim, K.B. et al. | 2012
- 33
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Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxyFreitas, J.A. Jr. / Culbertson, J.C. / Mastro, M.A. / Kumagai, Y. / Koukitu, A. et al. | 2011
- 38
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Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substratesFujikura, Hajime / Oshima, Yuichi / Megro, Takeshi / Saito, Toshiya et al. | 2011
- 44
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Growth and strain characterization of high quality GaN crystal by HVPEGeng, Huiyuan / Sunakawa, Haruo / Sumi, Norihiko / Yamamoto, Kazutomi / Atsushi Yamaguchi, A. / Usui, Akira et al. | 2011
- 50
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Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configurationGrzegory, I. / Boćkowski, M. / łucznik, B. / Weyher, J. / Litwin-Staszewska, E. / Konczewicz, L. / Sadovyi, B. / Nowakowski, P. / Porowski, S. et al. | 2011
- 56
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Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3Imade, Mamoru / Bu, Yuan / Sumi, Tomoaki / Kitamoto, Akira / Yoshimura, Masashi / Sasaki, Takatomo / Imsemura, Masashi / Mori, Yusuke et al. | 2011
- 60
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Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H2 and N2Kumagai, Yoshinao / Igi, Takahiro / Ishizuki, Masanari / Togashi, Rie / Murakami, Hisashi / Takada, Kazuya / Koukitu, Akinori et al. | 2011
- 66
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Development of GaN wafers for solid-state lighting via the ammonothermal methodLetts, Edward / Hashimoto, Tadao / Ikari, Masanori / Nojima, Yoshihiro et al. | 2011
- 69
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AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPENomura, Takuya / Okumura, Kenta / Miyake, Hideto / Hiramatsu, Kazumasa / Eryu, Osamu / Yamada, Yoichi et al. | 2011
- 72
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Growth of bulk GaN crystal by Na flux method under various conditionsMori, Y. / Imade, M. / Murakami, K. / Takazawa, H. / Imabayashi, H. / Todoroki, Y. / Kitamoto, K. / Maruyama, M. / Yoshimura, M. / Kitaoka, Y. et al. | 2011
- 75
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Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substratesNagashima, Toru / Hakomori, Akira / Shimoda, Takafumi / Hironaka, Keiichiro / Kubota, Yuki / Kinoshita, Toru / Yamamoto, Reo / Takada, Kazuya / Kumagai, Yoshinao / Koukitu, Akinori et al. | 2012
- 80
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Zinc-blende and wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxyNovikov, S.V. / Staddon, C.R. / Luckert, F. / Edwards, P.R. / Martin, R.W. / Kent, A.J. / Foxon, C.T. et al. | 2011
- 85
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Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxyPark, Hyun Jong / Kim, Hong-Yeol / Young Bae, Jun / Shin, Seonghwan / Kim, Jihyun et al. | 2011
- 89
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Growth of GaN boules via vertical HVPERichter, E. / Gründer, M. / Netzel, C. / Weyers, M. / Tränkle, G. et al. | 2011
- 93
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On the formation of vacancy defects in III-nitride semiconductorsTuomisto, F. / Mäki, J.-M. / Rauch, C. / Makkonen, I. et al. | 2011
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Contents| 2012