Comprehensive experimental study on Schottky contact super barrier rectifier (English)
- New search for: Yu, Qisheng
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- New search for: Chen, Wensuo
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- New search for: Yu, Qisheng
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Comprehensive experimental study on Schottky contact super barrier rectifier
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Contributors:Yu, Qisheng ( author ) / Zhang, Zhengyuan ( author ) / Zhang, Aohang ( author ) / Huang, Jiaweiwen ( author ) / Chen, Wensuo ( author )
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Publisher:
- New search for: Elsevier Ltd
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Publication date:2024-01-11
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Table of contents – Volume 144
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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A 1.8 V 98.6 dB SNDR discrete-time CMOS delta-sigma ADCWei, Cong / Chen, Chengying / Huang, Gongxing / Huang, Lijie / Wang, Renping / Wei, Rongshan et al. | 2023
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A 9T-SRAM in-memory computing macro for Boolean logic and multiply-and-accumulate operationsDai, Chenghu / Ren, Zihua / Guan, Lijun / Liu, Haitao / Gao, Mengya / Lu, Wenjuan / Pang, Zhiyong / Peng, Chunyu / Wu, Xiulong et al. | 2023
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A 0.55-mm2 8-bit 32-GS/s TI-SAR ADC with optimized hierarchical sampling architectureDing, Jiale / Huang, Yukai / Zhang, Hao / Feng, Tian / Wang, Feida / Li, Dengquan / Zhu, Zhangming et al. | 2024
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A wideband low power RF Receiver Front-End for Internet-of-Things applicationsZhou, Rong / Yang, Jianhang / Wang, Linwei / Zhao, Xiaoteng / Liu, Shubin / Sun, Depeng et al. | 2023
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Artificial neural network models for metal-ferroelectric-insulator-semiconductor ferroelectric tunnel junction memristorLi, Tiancheng / Li, Erping / Duan, Huali / Chu, Zhufei / Wang, Jian / Chen, Wenchao et al. | 2023
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Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diodeXie, Xintong / Sun, Shuxiang / Zhao, Zhijia / Zhang, Pengfei / Wei, Jie / Zhou, Xin / Shen, Jingyu / Qiu, Jinpeng / Luo, Xiaorong et al. | 2024
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A 6T1C pixel circuit compensating for TFT electrical characteristics variations, voltage drop, and OLED degradationZhao, Huicheng / Yu, Bo / Wei, Ning / Chu, Hongzhen / Li, Yuehua / Wang, Xinlin / He, Hongyu et al. | 2024
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Comprehensive experimental study on Schottky contact super barrier rectifierYu, Qisheng / Zhang, Zhengyuan / Zhang, Aohang / Huang, Jiaweiwen / Chen, Wensuo et al. | 2024
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Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperaturesFeng, Yahui / Guo, Hongxia / Ma, Wuying / Hu, Jiawen / Ouyang, Xiaoping / Zhang, Jinxin / Zhang, Fengqi / Zhang, Hong / Bai, Ruxue / Ma, Xiaohua et al. | 2023
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OTK-based PUF CRP obfuscation for IoT device authenticationRoy, Aditi / J, Kokila / N, Ramasubramanian / Begum, B. Shameedha et al. | 2023
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A runtime-reconfigurable convolutional engine using tensor multiplication with multiple computing modes in 22-nm CMOSQian, Junyi / Ji, Yuxin / Li, Cai et al. | 2023
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Variations of single event transient induced by line edge roughness (LER) and temperature in FinFETLiu, Baojun / Yang, Xiaokuo / Zhu, Jing et al. | 2023
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Design and analysis of a high-speed low-power comparator with regeneration enhancement and through current suppression techniques from 4 K to 300 K in 65-nm Cryo-CMOSPai, Chia-Wei / Uchida, Ken / Tada, Munehiro / Ishikuro, Hiroki et al. | 2023
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A 2-2 MASH ΔΣ ADC with fast-charge CLS input buffer and dual double sampling achieving 103.3-dB SNDR and ±2.5-ppm/FSR INLChen, Yang / Cai, Binyu / Chen, Changhuan / Peng, Weiliang / Sun, Quan / Wang, Xiaofei / Zhang, Hong et al. | 2024
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Novel low loss dual-trench superjunction IGBT with semi-floating P-pillarShen, Zhigang / Chen, Wensuo et al. | 2023
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A 10-kHz BW 104.3-dB DR discrete-time delta-sigma modulator with ring-amplifier-based integratorLi, Yuming / Peng, Shuai / Peng, Weiliang / Chen, Yang / Li, Zhiming / Zhang, Jie / Wang, Xiaofei / Zhang, Hong et al. | 2023
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Single inductor multi-PZTs SECE and electromagnetic voltage multiplier rectifier hybrid interface circuitShi, Ge / Hu, Xiangzhan / Jia, Shengyao / Liang, Xing / Sun, Yanwei / Shi, Mang / Wang, Binrui et al. | 2024
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A 8.1-nW, 4.22-kHz, −40–85 °C relaxation oscillator with subthreshold leakage current compensation and forward body bias buffer for low power IoT applicationsZhou, Rong / Wang, Linwei / Yang, Jianhang / Li, Zhen / Zhao, Xiaoteng / Liu, Shubin et al. | 2024
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A compact fifth-order SIW BPF based on TSV technology with high selectivityWang, Fengjuan / Kou, Jilin / Yin, Xiangkun / Liu, Jiangfan / Jing, Kai / Yu, Ningmei / Yang, Yuan / Li, Qian et al. | 2023
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Demonstration of a novel Dual-Source Elevated-Channel Dopingless TFET with improved DC and Analog/RF performanceAshok, Tammisetti / Pandey, Chandan Kumar et al. | 2023
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Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive systemTao, Yanan / Liang, Chao / Mei, Ziqi / Song, Zhiqiang / Wu, Yu / Sun, Yunna / Zhang, Wenqiang / Ruan, Yong / Zhao, Xiaoguang et al. | 2024
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Electrical characteristics assessment and noise analysis of pocket-doped multi source T-shaped gate tunnel FETKumari, Sushmita / Ghosh, Puja et al. | 2023
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Noninverting Schmitt trigger circuit with electronically tunable hysteresisKannaujiya, Aryan / Singh, Abhay Pratap / Shah, Ambika Prasad et al. | 2023
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Reliability analysis and comparison of ring-PUF based on probabilistic modelsBian, Jingchang / Huang, Zhengfeng / Lin, Yankun / Yang, Zhao / Liang, Huaguo / Ni, Tianming et al. | 2023
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A 8–12 GHz power amplifier with high out-of-band rejectionLi, Shengqi / Su, Guodong / Wang, Xiang / Liu, Jun et al. | 2023
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Physics based model development of a double gate reverse T-shaped channel TFET including 1D and 2D band-to-band tunneling componentsManikanta, K. / Nanda, Umakanta / Pandey, Chandan Kumar et al. | 2024
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Optimization of DE-QG TFET using novel CIP and DCT techniquesT.S., Manivannan / Pasupathy, K.R. / Shaikh, Mohd Rizwan Uddin / Lakshminarayanan, G. et al. | 2024
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Editorial Board| 2024
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High-performance montgomery modular multiplier with NTT and negative wrapped convolutionKe, Hongfei / Li, Hao / Zhang, Peiyong et al. | 2023
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The area-efficient gate level information flow tracking schemes of digital circuit with multi-level security latticeChen, Yongliang / Cui, Xiaole / Cui, Xiaoxin / Zhang, Xing et al. | 2023
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Inverter-based noise-shaping SAR ADC for low-power applicationsBadawy, Ali / Ismail, Ayman et al. | 2024