Spectroscopic determination of the band offset in CdTe/Cd1-xMnxTe multiple quantum wells grown on InSb substrates (English)
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In:
Journal of Crystal Growth
;
101
, 1-4
;
594-598
;
1989
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Spectroscopic determination of the band offset in CdTe/Cd1-xMnxTe multiple quantum wells grown on InSb substrates
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Contributors:Gregory, T.J. ( author ) / Hilton, C.P. ( author ) / Nicholls, J.E. ( author ) / Hagston, W.E. ( author ) / Davies, J.J. ( author ) / Lunn, B. ( author ) / Ashenford, D.E. ( author )
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Published in:Journal of Crystal Growth ; 101, 1-4 ; 594-598
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Publisher:
-
Publication date:1989-01-01
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Size:5 pages
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ISSN:
-
DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 101, Issue 1-4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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MOVPE of narrow and wide gap II–VI compoundsMullin, J.B. / Cole-Hamilton, D.J. / Irvine, S.J.C. / Hails, J.E. / Giess, J. / Gough, J.S. et al. | 1989
- 14
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Wide-gap II–VI heterostructuresGunshor, R.L. / Nurmikko, A.V. / Kolodziejski, L.A. / Kobayashi, M. / Otsuka, N. et al. | 1989
- 23
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Modulation-doped HgCdTe quantum well structures and superlattices grown by photoassisted molecular beam epitaxySchetzina, J.F. / Han, J.W. / Lansari, Y. / Giles, N.C. / Yang, Z. / Hwang, S. / Cook, J.W. Jr. / Otsuka, N. et al. | 1989
- 33
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Photoassisted molecular beam epitaxy of wide gap II–VI heterostructuresBicknell-Tassius, R.N. / Waag, A. / Wu, Y.S. / Kuhn, T.A. / Ossau, W. et al. | 1989
- 42
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In situ characterization of organometallic growth of ZnSe using grazing incidence X-ray scatteringKisker, D.W. / Fuoss, P.H. / Brennan, S. / Renaud, G. / Tokuda, K.L. / Kahn, J.L. et al. | 1989
- 48
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Luminescence and electrical properties of ZnSe grown by photo-assisted OMVPEFujita, Shizuo / Tanabe, Akira / Kinoshita, Tetsuro / Fujita, Shigeo et al. | 1989
- 52
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Photo-assisted homoepitaxial growth of ZnS by molecular beam epitaxyKitagawa, M. / Tomomura, Y. / Nakanishi, K. / Suzuki, A. / Nakajima, S. et al. | 1989
- 56
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An RBS and chanelling study of epitaxial layers of CdxHg1-xTeAvery, A.J. / Diskett, D.J. / Giess, J. / Irvine, S.J.C. et al. | 1989
- 61
-
Laser irradiation during MBE growth of ZnSxSe1−x: A new growth parameterMatsumura, Nobuo / Fukada, Takashi / Saraie, Junji et al. | 1989
- 67
-
Photoluminescence spectroscopy of CdTe grown by photoassisted MBEGiles, N.C. / Bowers, K.A. / Harper, R.L. Jr. / Hwang, S. / Schetzina, J.F. et al. | 1989
- 73
-
MOVPE growth and characterization of Hg0.7Cd0.3Te layersDruilhe, R. / Desjonquéres, F. / Katty, A. / Tromson-Carli, A. / Lorans, D. / Svob, L. / Heurtel, A. / Marfaing, Y. / Triboulet, R. et al. | 1989
- 78
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Surface reconstruction and stabilization in MOMBE of ZnSe revealed by in-situ RHEED monitoringFujita, Shizuo / Yoshimura, Naomichi / Wu, Yi-Hong / Fujita, Shigeo et al. | 1989
- 81
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Optical properties of ZnSeZnTe strained layer superlattices prepared by atomic layer epitaxyTakemura, Yasushi / Dosho, Shiro / Konagai, Makoto / Takahashi, Kiyoshi et al. | 1989
- 86
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“MBE-Like” and “CVD-like” atomic layer epitaxy of ZnSe in mombe systemYoshikawa, A. / Okamoto, T. / Yasuda, H. / Yamaga, S. / Kasai, H. et al. | 1989
- 91
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Monolayer epitaxy of ZnSe On GaAs substrates by alternating adsorption of diethylzinc and hydrogenselenideShibata, Noriyoshi / Katsui, Akinori et al. | 1989
- 96
-
HgTe/HgCdTe superlattices: Growth, electrical and optical propertiesWu, Owen K. / Schulman, J.N. / Kamath, G.S. et al. | 1989
- 100
-
ZnTe and CdTe:ZnTe superlattices grown by MOVPEMullins, J.T. / Clifton, P.A. / Brown, P.D. / Brinkman, A.W. / Woods, J. et al. | 1989
- 105
-
Pulsed laser evaporation and epitaxy of Cd 1−x Mn x TeDubowski, J.J. et al. | 1989
- 111
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Effect of operating conditions and precursors on optoelectronic properties of OMVPE grown ZnSeGiapis, Konstantinos P. / Jensen, Klavs F. et al. | 1989
- 118
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ZnTeZnS strained-layer superlattices grown by ALE and MBE: Effects of strain on ZnTe incorporationKarasawa, Takeshi / Ohkawa, Kazuhiro / Mitsuyu, Tsuneo et al. | 1989
- 122
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Simulation of GaAs/CdTe heteroepitaxial growthDjafari Rouhani, M. / Laroussi, M. / Amrani, A. / Estève, D. et al. | 1989
- 126
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(111) CdTe molecular beam epitaxy growth on misoriented (001) GaAs substrateTatarenko, S. / Cibert, J. / Gobil, Y. / Feuillet, G. / Ligeon, E. / Dang, Le Si / Saminadayar, K. et al. | 1989
- 131
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Twin-free (Cd, Mn)Te substratesTriboulet, R. / Heurtel, A. / Rioux, J. et al. | 1989
- 135
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Linear and quadratic Zeeman effects of PAMBE grown CdTeOssau, W. / Kuhn, T.A. / Bicknell-Tassius, R.N. et al. | 1990
- 135
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Linear and quadratic Zeeman effects on PAMBE grown CdTeOssau, W. / Kuhn, T.A. / Bicknell-Tassius, R.N. et al. | 1989
- 141
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Growth and characterization of p-type VPE ZnS layersIida, S. / Yatabe, T. / Kinto, H. / Shinohara, M. et al. | 1989
- 147
-
MBE growth of (111) CdTe on Zn-stabilized and Se-stabilized (100) ZnSeHe, Li / Zhong, Jianguo / Li, Jie / Lu, Jian / Pong, Zhonglin / Yu, Meifang / Yu, Jinbi / Xie, Qinxi / Yuan, Shixin et al. | 1989
- 153
-
Characterisation of epitaxial CdxHg1−xTe using electrolyte electroreflectance with in-situ electrochemical etchingBerlouis, L.E.A. / Peter, L.M. / Diskett, D.J. / Avery, A.J. / Astles, M.G. / Giess, J. / Gordon, N.T. et al. | 1989
- 157
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Electrical and structural assessment of CdTe and CdMnTe layers grown by MBE on InSb structuresAshenford, D.E. / Hogg, J.H.C. / Johnston, D. / Lunn, B. / Scott, C.G. / Staudte, D. et al. | 1990
- 157
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Electrical and structural assessment of CdTe and CdMnTe layers grown by MBE on InSb substratesAshenford, D.E. / Hogg, J.H.C. / Johnston, D. / Lunn, B. / Scott, C.G. / Staudte, D. et al. | 1989
- 162
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Current transport mechanisms in epitaxial CdS/CdTe heterojunctionsErcelebi, C. / Brinkman, A.W. / Furlong, T.S. / Woods, J. et al. | 1989
- 167
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Effect of substrate orientation on crystalline microstructure of HgTe, CdTe AND HgCdTeCinader, G. / Raizman, A. / Oron, M. et al. | 1989
- 171
-
Laser-induced MOCVD of ZnO thin filmsShimizu, Masaru / Katayama, Takuma / Tanaka, Yukio / Shiosaki, Tadashi / Kawabata, Akira et al. | 1989
- 176
-
Growth of MBE ZnSxSe1−x using a novel electrochemical sulphur sourcePrior, K.A. / Wallace, J.M. / Hunter, J.J. / Adams, S.J.A. / Haines, M.J.L.S. / Saoudi, M. / Cavenett, B.C. et al. | 1989
- 180
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Growth and characterization of ZnSe grown on GaAs by hot-wall epitaxyHingerl, K. / Sitter, H. / As, D.J. / Rothemund, W. et al. | 1989
- 185
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Characterization of CdS epitaxial films by high energy reflected electronsDe Blasi, C. / Mancini, A.M. / Manno, D. / Vasanelli, L. et al. | 1989
- 190
-
Bulk-like low-temperature photoluminescence from CdTe/GaAs grown by hot-wall epitaxySchmidt, T. / Sitter, H. / Lischka, K. et al. | 1989
- 195
-
Structural and optical properties of Cd0.7Hg0.3Te-CdTe heterostructures grown by molecular beam epitaxyLentz, G. / Magnea, N. / Mariette, H. / Tuffigo, H. / Feuillet, G. / Fontenille, J. / Ligeon, E. / Saminadayar, K. et al. | 1989
- 199
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Photoluminescence properties of MOVPE grown ZnTe layers on (100) GaAs and (100) GaSbWagner, H.P. / Kuhn, W. / Gebhardt, W. et al. | 1989
- 204
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MOVPE of high quality ZnSe: Role of mismatch on reflectivity and photoconductivityAulombard, R.L. / Averous, M. / Briot, O. / Calas, J. / Coquillat, D. / Hamdani, F. / Lascaray, J.P. / Moulin, N. / Tempier, N. et al. | 1989
- 208
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Use of MeMn(CO)5 in the low temperature MOCVD growth of Mn containing alloysPain, G.N. / Bharatula, N. / Christiansz, G.I. / Kibel, M.H. / Kwietniak, M.S. / Sandford, C. / Warminski, T. / Dickson, R.S. / Rowe, R.S. / McGregor, K. et al. | 1989
- 211
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The absolute determination of CdTe crystal polarityBrown, P.D. / Durose, K. / Russell, G.J. / Woods, J. et al. | 1989
- 216
-
“Cold travelling heater method”, a novel technique of synthesis, purification and growth of CdTe and ZnTeTriboulet, R. / Pham Van, Khoan / Didier, G. et al. | 1989
- 221
-
Growth and characterization of CdS crystalsSu, Ching-Hua / Lehoczky, S.L. / Szofran, F.R. et al. | 1989
- 226
-
Characterization of CdTe crystals by chemical etching and cathodoluminescence measurementsBrandt, G. / Ennen, H. / Moritz, R. / Rothemund, W. et al. | 1989
- 232
-
Structural perfection of Hg1−xCdxTe Grown by THMGenzel, C. / Gille, P. / Hähnert, I. / Kiessling, F.M. / Rudolph, P. et al. | 1989
- 237
-
X-ray absorption spectroscopy of CdMnTeKisiel, A. / Oleszkiewicz, J. / Podgórny, M. / Dalba, G. / Rocca, F. / Burattini, E. et al. | 1989
- 241
-
Study of p-to-n-type conversion in bulk Hg1-xZnxTe near x = 0.15Granger, R. / Lasbley, A. / Seyni, A. / Rolland, S. / Triboulet, R. et al. | 1989
- 246
-
Twinning in CdTeDurose, K. / Russell, G.J. et al. | 1989
- 251
-
New defect etchants for CdTe and Hg1-xCdxTeHähnert, I. / Schenk, M. et al. | 1989
- 256
-
Crystalline perfection of melt-grown CdTeAzoulay, M. / Raizman, A. / Gafni, G. / Roth, M. et al. | 1989
- 261
-
Interdiffusion coefficient in Hg1-xZnxTe solid solutionsGranger, R. / Pobla, C. / Rolland, S. / Triboulet, R. et al. | 1989
- 266
-
Vertical Bridgman growth of Cd1−yZnyTe and characterization of substrates for use in Hg1−xCdxTe liquids phase epitaxyBruder, M. / Schwarz, H.-J. / Schmitt, R. / Maier, H. / Möller, M.-O. et al. | 1989
- 266
-
Vertical Bridgman growth of Cd1-yZnyTe and characterization of substrates for use in Hg1-xCdxTe liquid phase epitaxyBruder, M. / Schwarz, H.J. / Schmitt, R. / Maier, H. / Moller, M.O. et al. | 1990
- 270
-
Cdte and CdZnTe crystal growth by horizontal bridgman techniqueCheuvart, P. / El-Hanani, U. / Schneider, D. / Triboulet, R. et al. | 1989
- 275
-
Crystalline and chemical quality of CdTe and Cd1-xZnxTe grown by the Bridgman method in low temperature gradientsMühlberg, M. / Rudolph, P. / Genzel, C. / Wermke, B. / Becker, U. et al. | 1989
- 281
-
Heat treatment of HgCdTe with CdHg sourceJianrong, Yang / Zhenzhong, Yu / Jiming, Liu / Dingyuan, Tang et al. | 1989
- 285
-
Point defect formation in II–VI semiconductors at pulsed laser irradiationKorsunskaya, N.E. / Markevich, I.V. / Sheinkman, M.K. et al. | 1989
- 289
-
p-type doping by ion implantation into ZnSe epitaxial layers grown by metalorganic vapor phase epitaxyYodo, Tokuo / Ueda, Kazuhiro / Yamashita, Ken et al. | 1989
- 294
-
Identification of Na acceptor in MOCVD-grown ZnS films and the effect of UV light illuminationTaguchi, Tsunemasa / Kawazu, Zempei / Ohno, Tetsuichiro / Sawada, Akihiro et al. | 1989
- 300
-
Extrinsic doping at low concentrations for CDxHg1-xTe layers grown by MOVPEMaxey, C.D. / Capper, P. / Whiffin, P.A.C. / Easton, B.C. / Gale, I. / Clegg, J.B. / Harker, A. / Jones, C.L. et al. | 1989
- 305
-
Use of dimethyl hydrazine as a new acceptor-dopant source in metalorganic vapor phase epitaxy of ZnSeYoshikawa, A. / Matsumoto, S. / Yamaga, S. / Kasai, H. et al. | 1989
- 311
-
Ag and Cu deposits on HgXTe (X=Cd, Zn) alloysVan Huong, C.Nguyen / Triboulet, R. / Lemasson, P. et al. | 1989
- 318
-
Band structure and heterojunctions of II–VI materialsChristensen, N.E. / Gorczyca, I. / Christensen, O.B. / Schmid, U. / Cardona, M. et al. | 1989
- 332
-
Tight-binding calculations of total energies of macroscopic polar electron-core systems: Application to II–VI compoundsNeugebauer, J. / Enderlein, R. / Röseler, J. et al. | 1989
- 337
-
Spin splitting in narrow-gap two-dimensional electron systemsSobkowicz, P. et al. | 1989
- 341
-
Theory of the dynamical stark effect of excitons in CdSZimmermann, R. / Hartmann, M. et al. | 1989
- 346
-
Theory of exciton linewidth in II–VI semiconductor mixed crystalsZimmermann, R. et al. | 1989
- 350
-
Tunneling current calculated for Hg0.8Cd0.2Te diodesSchenk, A. / Stahl, M. / Wünsche, H.-J. et al. | 1989
- 355
-
Tight binding theory for deep-level native point defects in Hg1-xCdxTeHennig, D. / Hanke, M. / Kaschte, A. et al. | 1989
- 359
-
Band structure and discontinuities of HgTe/CdTe superlattices: A theoretical studyRitze, M. / Enderlein, R. et al. | 1989
- 364
-
Valence band structure of Cd0.7Hg0.3Te determined by angular resolved photoemissionLeveque, G. / Orsal, B. / Alabedra, R. / Flachet, J.C. et al. | 1989
- 368
-
Ligand-field theory for the orbit-lattice and spin-lattice coupling coefficients of Mn2+ in ZnS and ZnSeBoulanger, D. / Parrot, R. et al. | 1989
- 372
-
Calculation of band offsets in strained II–VI heterojunctionsBertho, D. / Simon, A. / Boiron, D. / Jouanin, C. / Priester, C. et al. | 1989
- 376
-
Geometry optimization of Zn 1−x Mn x S structures by SCF CNDO and INDO methodsStavrev, K.K. / Kynev, K.D. / Nikolov, G.St. et al. | 1989
- 379
-
Energy transfer between electromagnetic modes near the isotropic point in CdSCzajkowski, G. / Pantke, K.-H. / Ziebegk, K. / Schillak, P. et al. | 1989
- 385
-
Jahn-teller effect and zero-phonon line isotope shifts of transition metals in II–VI compoundsHoffmann, A. / Scherz, U. et al. | 1989
- 393
-
Rare earths in II–VI compounds: Non-linear optical excitation processes at low and high doping levelsHommel, D. / Busse, W. / Gumlich, H.-E. / Suisky, D. / Röseler, J. / Swiatek, K. / Godlewski, M. et al. | 1989
- 404
-
Characterization of deep levels in CdTe by photo-EPR and related techniquesJantsch, W. / Hendorfer, G. et al. | 1989
- 414
-
Cr2+ (d4) infrared emission in CdS and CdSeGoetz, G. / Krost, A. / Schulz, H.-J. et al. | 1989
- 420
-
Implantation effects on resonant Raman scattering in CdTe and Cd0.23Hg0.77TeRamsteiner, M. / Lusson, A. / Wagner, J. / Koidl, P. / Bruder, M. et al. | 1989
- 425
-
p-Doping of epitaxial ZnSe using group I elementsPotts, J.E. / Cheng, H. / DePuydt, J.M. / Haase, M.A. et al. | 1989
- 430
-
Photoluminescence and annealing behavior of Ga-doped CdTe crystalsSeto, S. / Tanaka, A. / Suzuki, K. / Kawashima, M. et al. | 1989
- 435
-
Deep Rare Earth (RE) ions related energy levels in ZnSŚwia̧tek, K. / Suchocki, A. / Przybylińska, H. / Godlewski, M. et al. | 1989
- 439
-
Deuteration effects in chlorine-doped CdTeSvob, L. / Heurtel, A. / Marfaing, Y. et al. | 1989
- 443
-
Excited State Absorption (ESA) of Mn in ZnS and ZnSeDreyhsig, J. / Stutenbäumer, U. / Gumlich, H.-E. / Allen, J.W. et al. | 1989
- 449
-
The influence of high temperature annealing on luminescence and energy transfer in ZnS / Mn crystalsGrasser, R. / Scharmann, A. / Seidel, B. et al. | 1989
- 454
-
Deep centers in S+ implanted ZnSeRen, Weihong / Yang, Xizhen / Fan, Xiwu et al. | 1989
- 458
-
5d transition and 4f rare earth elements in II–VI semiconductors as luminescent centres and probes in diagnostics of implanted layersUshakov, V.V. / Gippius, A.A. et al. | 1989
- 462
-
Luminescent properties of CaS phosphors activated by copper and flourineNakanishi, Yoichiro / Natsume, Kazumasa / Fukuda, Yasuo / Shimaoka, Goro / Tatsuoka, Hirokazu / Kuwabara, Hiroshi / Nakazawa, Eiichiro et al. | 1989
- 466
-
Optical investigation of Ni impurity in ZnSe under hydrostatic pressureWasik, D. / Liro, Z. / Baj, M. et al. | 1989
- 470
-
Jahn-Teller effect for CdS:Fe2+ and CdSe:Fe2+Vogel, Eugenio E. / de Orúe, Manuel A. / Rivera-Iratchet, Juan / Morales, Juan E. et al. | 1989
- 474
-
Middle infrared photoluminescence mapping of II–VI semiconductor wafersSchmidt, H. / Tomm, J.W. / Herrmann, K.H. et al. | 1989
- 479
-
The behavior of phosphorus implanted CdTeSun, C.Y. / Hsu, Y.J. / Hwang, H.L. et al. | 1989
- 484
-
Investigation of the Mn2+ → Mn2+ energy transfer using time-resolved ODMRZink, K. / Nelkowski, H. / Sahm, J. et al. | 1989
- 488
-
Excited states of acceptors in CdTe and ZnTeSaid, M. / Kanehisa, M.A. et al. | 1989
- 493
-
Observation by 57Fe Mossbauer spectroscopy of iron as electron traps and of the relaxation of these transient states in ZnTe and ZnSGérard, A. / Garcin, C. / Imbert, P. et al. | 1989
- 497
-
Optical and electrical properties of heavily indium-doped CdS around the semiconductor-metal phase transitionBroser, I. / Broser, R. / Birkicht, E. et al. | 1989
- 502
-
A new 1.47 eV defect-luminescence band in MOCVD-grown CdTe on (100) GaAsOnodera, Chikara / Taguchi, Tsunemasa et al. | 1989
- 507
-
Investigations of the temperature dependent Fe2+(3d6) resonant donor level in HgSe:FeSzuszkiewicz, W. / Dingrong, Qian / Julien, C. / Jiaming, Zhang / Jez̊ewski, M. / Balkanski, M. / Mycielski, A. et al. | 1989
- 512
-
Study of Hg vacancies in (Hg,Cd)Te after THM growth and post-growth annealing by positron annihilationKrause, R. / Klimakow, A. / Kiessling, F.M. / Polity, A. / Gille, P. / Schenk, M. et al. | 1989
- 517
-
Photo-ESR characterization of donor and acceptor impurities in ZnSGodlewski, M. / Zakrzewski, A. et al. | 1989
- 521
-
Long range Mn Ion pairs and other Mn related centers in ZnS detected by site-selected spectroscopyPohl, U.W. / Gumlich, H.-E. et al. | 1989
- 525
-
Optical properties of oxygen-doped ZnSe crystalsKulakov, M.P. / Negriy, V.D. et al. | 1989
- 528
-
Many-electron multiplet effects in the spectra of Ni and Co in II–VI semiconductorsBouhelal, A. / Albert, J.P. et al. | 1989
- 532
-
Fine structure of the Cu2+ centre in CdSHoffmann, A. / Broser, I. / Thurian, P. / Heitz, R. et al. | 1989
- 536
-
Optical and optically detected magnetic resonance investigations on the A-center complex in CdTeHofmann, D.M. / Meyer, B.K. / Probst, U. / Benz, K.W. et al. | 1989
- 540
-
Magneto-optics in II–VI compound type III superlatticesGuldner, Y. / Manassès, J. et al. | 1989
- 546
-
Optoelectronic properties of ZnSeGaAs interfaces: Role of interface chemistry and structural defectsOlego, D.J. / Cammack, D. et al. | 1989
- 550
-
Effects of electric field on ZnSe/ZnS strained-layer superlatticesYokogawa, Toshiya / Saitoh, Tohru / Narusawa, Tadashi et al. | 1989
- 554
-
Photoluminescence of wide bandgap II–VI superlatticesO'Donnell, K.P. / Parbrook, P.J. / Henderson, B. / Trager-Cowan, C. / Chen, X. / Yang, F. / Halsall, M.P. / Wright, P.J. / Cockayne, B. et al. | 1989
- 559
-
Electronic structure, effective masses and non-linear optical response in Hg1-xCdxTe-Hg1-yCdyTe and Hg1-xCdxTe-Cd1-yZnyTe superlatticesJaros, M. / Zoryk, A. / Beavis, A.W. / Morrison, I. et al. | 1989
- 566
-
Mis structures on Hg 1-x Cd x Te/CdTe/GaAs epilayersLang, M. / Lischka, K. et al. | 1989
- 572
-
High resolution X-ray diffraction studies of CdxHg1-xTe/CdTe epitaxial layers grown by MOVPE on GaAs substratesKeir, A.M. / Graham, A. / Barnett, S.J. / Giess, J. / Astles, M.G. / Irvine, S.J.C. et al. | 1989
- 579
-
Surface radiative recombination in CdS CrystalsTravnikov, V.V. et al. | 1989
- 584
-
Effect of deposition temperature on the electrical properties of p-type Hg0.8Cd0.2TeZnS interfaceEsquivias, I. / Linares, E. / Iborra, E. / Sangrador, J. et al. | 1989
- 589
-
Investigation of the CdTe/GaAs interface by the x-ray rocking curve methodPesek, A. / Ryan, T.W. / Sasshofer, R. / Fantner, E.J. / Lischka, K. et al. | 1989
- 594
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Spectroscopic determination of the band offset in CdTe/Cd1-xMnxTe multiple quantum wells grown on InSb substratesGregory, T.J. / Hilton, C.P. / Nicholls, J.E. / Hagston, W.E. / Davies, J.J. / Lunn, B. / Ashenford, D.E. et al. | 1989
- 599
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Photoluminescence as a probe of semiconductor surfaces: CdTe and CdSSobiesierski, Z. / Dharmadasa, I.M. / Williams, R.H. et al. | 1989
- 603
-
Deformation potentials of CdTe epilayers from piezo and wavelength modulation reflectivity spectra analysisAllègre, J. / Gil, B. / Calatayud, J. / Mathieu, H. et al. | 1989
- 608
-
XPS study of the ZnxHg1−xTe alloys: Core levels and valence-band offsetMarbeuf, A. / Ballutaud, D. / Triboulet, R. / Marfaing, Y. et al. | 1989
- 611
-
Cyclotron resonance excitation spectroscopy of CdTe and of CdTe/CdZnTe quantum wellsLavigne, B. / Cox, R.T. et al. | 1989
- 616
-
Spectroscopic evidence for piezoelectric effects in wurtzite CdS/CdSe strained-layer superlatticesHalsall, M.P. / Nicholls, J.E. / Davies, J.J. / Wright, P.J. / Cockayne, B. et al. | 1989
- 620
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Valence band offset and interface chemistry of II–VI epitaxial layers grown on the (110) surface of III–V materialsWilke, W.G. / Seedorf, R. / Horn, K. et al. | 1989
- 628
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Spectroscopy in CdTe/MnTe and ZnTe/MnTe single quantum wells; new binary wide gap II–VI heterostructuresPelekanos, N. / Fu, Q. / Nurmikko, A.V. / Durbin, S. / Han, J. / Sungki, O. / Menke, D. / Kobayashi, M. / Gunshor, R.L. et al. | 1989
- 632
-
Nonlinear optical properties of wide-gap II–VI bulk semiconductors and microcrystallitesHenneberger, F. / Puls, J. / Rossmann, H. / Woggon, U. / Freundt, S. / Spiegelberg, Ch. / Schülzgen, A. et al. | 1989
- 643
-
Ultrafast optical nonlinearities in II–VI compoundsFluegel, B. / Joffre, M. / Park, S.H. / Morgan, R. / Hu, Y.Z. / Lindberg, M. / Koch, S.W. / Hulin, D. / Migus, A. / Antonetti, A. et al. | 1989
- 650
-
Optical properties of CdTe/Cd 1-x Zn x Te quantum wells and superlatticesMerle d'Aubigné, Y. / Mariette, H. / Magnea, N. / Tuffigo, H. / Cox, R.T. / Lentz, G. / Dang, Le Si / Pautrat, J.-L. / Wasiela, A. et al. | 1989
- 661
-
Excitonic luminescence and the effect of high excitation in ZnSeZnS strained-layer superlattices grown on ZnS substratesYamada, Yoichi / Taguchi, Tsunemasa et al. | 1989
- 667
-
High-density luminescence and excitation spectroscopy of MBE-grown ZnSe/GaAs epilayersKudlek, G. / Presser, N. / Gutowski, J. / Durbin, S. / Menke, D. / Kobayashi, M. / Gunshor, R.L. et al. | 1989
- 673
-
Systematic photoluminescence study of CdxHg1−xTe alloys in a wide composition rangeLusson, A. / Fuchs, F. / Marfaing, Y. et al. | 1989
- 678
-
Picosecond transient gratings in CdS 1−x Se x mixed crystalsDörnfeld, C. / Noll, G. / Schwab, H. / Hvam, J.M. / Weber, Ch. / Renner, R. / Göbel, E.O. / Reznitsky, A. / Lyssenko, V. / Pendjur, S.A. et al. | 1989
- 683
-
Dynamics of free exciton luminescence in CdxZn1-xTe/ZnTe quantum wellsStanley, R.P. / Hegarty, J. / Fischer, R. / Feldmann, J. / Göbel, E.O. / Feldman, R.D. / Austin, R.F. et al. | 1989
- 687
-
Dielectric properties of narrow-gap semiconductorsKumazaki, K. et al. | 1989
- 691
-
Mechanism of the temperature dependence of bound-exciton photoluminescence of CdTe crystalsZimmermann, H. / Boyn, R. / Michel, C. / Rudolph, P. et al. | 1989
- 695
-
Optically bistable thin film devices using wide-gap II–VI compoundsEichler, Hans J. / Glaw, Veronika / Kummrow, Andreas / Penschke, Volker / Wahi, Aseem et al. | 1989
- 699
-
Nonlinear spectroscopy of deep levels in wide-gap II–VI semiconductorsBaltramiejũnas, R. / Gavryushin, V. et al. | 1989
- 705
-
Optical study of ZnSe and (Zn,Mn)Se MBE layers on GaAsHeimbrodt, W. / Goede, O. / Köpp, Th. / Enderlein, R. / Pessa, M. / Lilja, J. et al. | 1989
- 709
-
Density of states model and photoluminescence spectra of localized excitons in ZnHgTe and CdHgTe alloysOuadjaout, D. / Marfaing, Y. / Lusson, A. / Heurtel, A. et al. | 1989
- 713
-
Exciton absorption in CdS1-xSex and ZnSe1-xTex solid solutionsNaumov, A. / Permogorov, S. / Reznitsky, A. / Verbin, S. / Klochikhin, A. et al. | 1989
- 718
-
Absolute absorption coefficients of ZnTe single crystal layers: Experiment and theoryLangen, B. / Leiderer, H. / Limmer, W. / Gebhardt, W. / Ruff, M. / Rössler, U. et al. | 1989
- 722
-
Fourier transform infrared photoluminescence of Hg1-xCdxTeFuchs, F. / Lusson, A. / Koidl, P. / Triboulet, R. et al. | 1989
- 727
-
Strain-induced splitting of free exciton band in epitaxially grown ZnSe on GaAsSaito, H. / Ohishi, M. / Watanabe, A. / Ohmori, K. et al. | 1989
- 731
-
Optical dephasing in CdSSe mixed crystals studied by coherent transient grating experimentsNoll, G. / Siegner, U. / Göbel, E.O. / Schwab, H. / Renner, R. / Klingshirn, C. et al. | 1989
- 734
-
The electron-hole plasma in cubic ZnTe and ZnSe crystalsKunz, M. / Pier, T. / Bhargava, R.N. / Reznitsky, A. / Kozlovskii, V.I. / Müller-Vogt, G. / Pfister, J.C. / Pautrat, J.L. / Klingshirn, C. et al. | 1989
- 739
-
Novel size effects in excitonic spectra of thin II–VI single crystalsMikhailov, G.V. / Panfilov, A.G. / Razbirin, B.S. et al. | 1989
- 743
-
Luminescence of heavily doped, highly excited CdS: In crystalsNeukirch, U. / Broser, I. / Rass, R. et al. | 1989
- 748
-
Frequency doubling and phase matching with II–VI microcrystalsColak, S. / Khurgin, J. et al. | 1989
- 754
-
Photopumped lasing in ZnSSe/ZnSe multilayer structures up to 210 KSuemune, I. / Masato, H. / Nakanishi, K. / Yamada, K. / Kan, Y. / Yamanishi, M. et al. | 1989
- 758
-
Thermally induced optical bistability in II–VI semiconductor crystals and thin filmsSchmidt, A. / Müller, M. / Grohs, J. / Kunz, M. / Daunois, A. / Kažukauskas, V. / Kar, A.K. / Bartelt, H. / Klingshirn, C. et al. | 1989
- 763
-
Optical characterization of ultra-high-purity Zinc Selenide epilayersShahzad, Khalid / Olego, Diego J. / Cammack, David A. et al. | 1989
- 767
-
Exciton transfer between localized states in CdS1-xSex alloys: Time-resolved photoluminescence and theoretical modelsGourdon, C. / Lavallard, P. et al. | 1989
- 773
-
Electron-hole plasma relaxation in CdTeCollet, J.H. / Rühle, W.W. / Pugnet, M. / Leo, K. / Million, A. et al. | 1989
- 778
-
Optical properties of excitons in II–VI quantum wells: Importance of centre-of-mass quantizationTuffigo, H. / Cox, R.T. / Lentz, G. / Magnea, N. / Mariette, H. et al. | 1989
- 783
-
Exciton states and LO-phonon resonant Raman scattering in CdTe/ZnTe superlatticesGarini, Y. / Cohen, E. / Ron, Arza / Shtrikman, Hadas et al. | 1989
- 787
-
Middle infrared photoluminescence (PL) in the Hg1-xCdxTe (0.22≤ x ≤ 0.75) systemWerner, L. / Tomm, J.W. / Tilgner, J. / Herrmann, K.H. et al. | 1989
- 792
-
Free-carrier absorption due to collective and one-particle processes in a linear conduction bandBardyszewski, W. / Szuszkiewicz, W. / Dingrong, Qian / Jiaming, Zhang et al. | 1989
- 797
-
Photoconduction and thermo-optical hysteresis measurements in thin CdS filmsBouchenaki, Ch. / Ullrich, B. / Zielinger, J.P. / Nguyen Cong, H. / Chartier, P. et al. | 1989
- 802
-
Fine structure of the excitonic absorption spectra and interband magneto-optics of CdTe crystalsAbdullaev, M.A. / Coschug, O.S. / Kokhanovskii, S.I. / Seisyan, R.P. et al. | 1989
- 808
-
Transport properties of II–VI semimagnetic semiconductorsDietl, Tomasz et al. | 1989
- 818
-
p-type carrier concentration control in lithium-doped zinc selenide grown by MOCVDMitsuhashi, H. / Yahata, A. / Uemoto, T. / Kamata, A. / Okajima, M. / Hirahara, K. / Beppu, T. et al. | 1989
- 822
-
Galvanomagnetic properties of p-CdTe and p-Hg1−xCdxTeHöschl, P. / Moravec, P. / Prosser, V. / Kžel, R. / Grill, R. / Franc, J. / Belas, E. / Ivanov, Yu.M. et al. | 1989
- 826
-
Picosecond photoconductivity of CdSe and CdTe thin filmsVaitkus, J. / Tomašũnas, R. / Kutra, J. / Petrauskas, M. / Rimkũnas, R. / Žindulis, A. et al. | 1989
- 828
-
Photo-hall model for space charge effects in n-ZnSe/GaAs:Cr heterostructuresColak, S. / van Houten, H. / Marshall, T. / Cammack, D.A. et al. | 1989
- 835
-
p-Type conduction of ZnSe highly doped with nitrogen by metalorganic molecular beam epitaxyMigita, Masahito / Taike, Akira / Shiiki, Masatoshi / Yamamoto, Hajime et al. | 1989
- 841
-
Deep levels governing the transport mechanism in p-n HgMnTe diodesDobaczewski, L. / Janik, E. / Karczewski, G. et al. | 1989
- 844
-
Hall mobility and conductivity in Zn x Cd 1-x S mixed crystalsSaidin, M.K.B. / Russell, G.J. / Brinkman, A.W. / Woods, J. et al. | 1989
- 850
-
Control of the resistivity of MOCVD zinc selenide by post-growth annealingZheng, Jiazhen / Allen, J.W. et al. | 1989
- 854
-
Influence of deep level intrinsic defects on the carrier transport in p-type Hg1-xCdxTeHoerstel, W. / Klimakow, A. / Kramer, R. et al. | 1989
- 859
-
Carrier drift mobilities and PL spectra of high resistivity Cadmium TellurideSuzuki, K. / Seto, S. / Tanaka, A. / Kawashima, M. et al. | 1989
- 864
-
Electrical properties of Hg1−xCdxTe (x = 0.21) annealed by immersion in a hot mercury bathUzan-Saguy, C. / Laser, D. / Kalish, R. et al. | 1989
- 869
-
Shubnikov-de haas effect under hydrostatic pressure in HgSe:FeSkierbiszewski, C. / Suski, T. / Dobrowolski, W. / Kossut, J. et al. | 1989
- 872
-
Resistivity and high magnetic field hall effect measurements on as-grown p-type HgZnTeFajardo, P. / Sanz-Maudes, J. / Rodriguez, T. / González, M.A. / Triboulet, R. et al. | 1989
- 876
-
Ballistic transport in alkaline earth sulfidesFitting, H.-J. / von Czarnowski, A. / Müller, G.O. et al. | 1989
- 882
-
Free and bound exciton in II-VI semimagnetic compoundsGubarev, S.I. et al. | 1989
- 890
-
Holes in semimagnetic semiconductorsGelmont, B.L. et al. | 1989
- 895
-
Resonant Raman scattering by LO phonons in Cd0.8Mn0.2Te near the E0 gap in external magnetic fieldsLimmer, W. / Bauer, S. / Gebhardt, W. et al. | 1989
- 900
-
Anti-crossing of Raman lines: bound magnetic polaron in Cd1−xFexSeScalbert, D. / Gaj, J.A. / Mauger, A. / Cernogora, J. / Benoit àla Guillaume, C. et al. | 1989
- 905
-
Magneto-excitons in CdTe(CdMn)Te quantum wellsOssau, W. / Fischer, S. / Bicknell-Tassius, R.N. et al. | 1989
- 911
-
Optical study of the antiferromagnetic phase transition in (Cd,Mn)S at highest Mn concentrationHeimbrodt, W. / Benecke, C. / Goede, O. / Gumlich, H.-E. et al. | 1989
- 916
-
Resonant photoelectron spectroscopy on ZnMnS at the Mn 3p-3d and Mn 2p-3d thresholdWeidemann, R. / Burmester, B. / Gumlich, H.-E. / Jung, Ch. / Kleemann, T. / Kreitler, T. / Krost, A. / Middelmann, H.-U. / Becker, U. / Kupsch, M. et al. | 1989
- 921
-
Resonant Raman scattering by optical phonons in ZnSe and Zn0.97Mn0.03Se near the E0 gapLeiderer, H. / Limmer, W. / Gebhardt, W. et al. | 1989
- 926
-
Investigations on the cation d-levels of wide gap semimagnetic semiconductorsJung, Ch. / Gumlich, H.-E. / Knack, A. / Mertins, H.-C. et al. | 1989
- 931
-
Chemical trends of the luminescence in wide band gap II1−xMnxVI semimagnetic semiconductorsBenecke, C. / Busse, W. / Gumlich, H.-E. et al. | 1989
- 936
-
Nearest and next nearest neighbor exchange interaction between magnetic ions in II–VI semimagnetic semiconductorsBruno, A. / Lascaray, J.P. et al. | 1989
- 940
-
Resonant Raman scattering on low energy excited states of Fe2+ in Cd1−xFexSeScalbert, D. / Gaj, J.A. / Mauger, A. / Cernogora, J. / Benoit ÁLa Guillaume, C. / Mycielski, A. et al. | 1989
- 944
-
Blue spontaneous and stimulated emission in VPE ZnSe epilayersFan, X.W. / Tang, Z.K. / Tian, H. et al. | 1989
- 953
-
Conductivity control of ZnSe grown by MOVPE and its application for blue electroluminescenceKukimoto, Hiroshi et al. | 1989
- 958
-
Thin-film electroluminescent devices using CaS and SrSTanaka, Shosaku et al. | 1989
- 967
-
Ballistic transport and electroluminescence in IIB–VI and IIA–VI compoundsMach, R. / Müller, G.O. et al. | 1989
- 976
-
Thin film electroluminescence of Zn1−xMnxS1−yTeyBenalloul, P. / Benoit, J. / Geoffroy, A. / Yebdri, D. / Bilewicz, R. / Busse, W. / Gumlich, H.-E. / Rebentisch, R. et al. | 1989
- 981
-
Electroluminescence from minority carrier injection produced by deep-level impact-ionisationThompson, T.D. / Allen, J.W. et al. | 1989
- 985
-
Magnetic effects in electroluminescence of ZnS:Mn filmsBelyaev, A.E. / Kononetz, Ya.F. / Semenov, Yu.G. / Vlasenko, N.A. et al. | 1989
- 989
-
Decay of ZnS:Mn emission in thin films — revisitedBenalloul, P. / Benoit, J. / Mach, R. / Müller, G.O. / Reinsperger, G.U. et al. | 1989
- 994
-
Thin film electroluminescence of ZnS:Tb3+Khomchenko, V.S. / Kononec, Ya.F. / Vlasenko, N.A. / Mach, R. / Reinsperger, G.U. / Selle, B. / Reetz, R. et al. | 1989
- 999
-
Efficient ZnS-like alkaline earth sulfide electroluminescenceMüller, G.O. / Mach, R. / Selle, B. / Ohnishi, H. et al. | 1989
- 1004
-
Preliminary trial of third generation electroluminescence (EL)Xurong, Xu / Gang, Lei / Mengyan, Shen / Zhao, Guozhang et al. | 1989
- 1009
-
Injection luminescence in oxygen-doped ZnSe grown by molecular beam epitaxyAkimoto, Katsuhiro / Miyajima, Takao / Mori, Yoshifumi et al. | 1989
- 1013
-
Integration of a CdTe interdigitated photoconductor with an AlGaAs field-effect transistorFilippozzi, J.L. / Therez, F. / Esteve, D. / Fallahi, M. / Kendil, D. / Da Silva, M. / Barbe, M. / Cohen-Solal, G. et al. | 1990
- 1013
-
Integration of a CdTe interdigitated photoconductor with AlGaAs field-effect transistorFilippozzi, J.L. / Therez, F. / Estève, D. / Fallahi, M. / Kendil, D. / Da Silva, M. / Barbe, M. / Cohen-Solal, G. et al. | 1989
- 1018
-
Highly conductive Ga-doped polycrystalline (Zn,Cd)S filmsSchmid, D. / Mauch, R.H. / Hofmann, M. / Schäffler, R. / Schock, H.W. et al. | 1989
- 1022
-
Vibrations of constituent atoms in ZnxCd1−xTe and Hg1−xCdxTe (various x)Comedi, D. / Kalish, R. et al. | 1989
- 1027
-
Author index| 1989
- 1040
-
Subject index| 1989
- ix
-
Editors' preface| 1989
- viii
-
Editorial Board| 1989
- x
-
Opening session| 1989
- xiii
-
Concluding remarks at the closing sessionGumlich, H.-E. et al. | 1989