Mobile ions entering the IGBT gate oxide - electrical detection and failure localization by lock-in thermography (English)
- New search for: Käsbauer, M.
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- New search for: Dreher, P.
- New search for: Sippel, M.
- New search for: Schmidt, R.
In:
Microelectronics and Reliability
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150
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2023
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Mobile ions entering the IGBT gate oxide - electrical detection and failure localization by lock-in thermography
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Contributors:
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Published in:
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Publisher:
- New search for: Elsevier Ltd
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Publication date:2023-06-17
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 150
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Alumina layers deposited by atomic layer deposition with different precursors: Surface photovoltage measurementsKolkovsky, Vl. / Dill, P. et al. | 2023
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Health state diagnosis of air duct for photovoltaic inverter based on PSO-SVM classifierSong, Qiwei / Ma, Mingyao / Guo, Weisheng / Jiang, Tingzhi / Pan, Nianan et al. | 2023
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Physics of failure and high-temperature reliability on Ag sintered ENIG finished die-attachments at 175 °C for integration of in-wheel motor systemsKim, Seoah / Kim, Junyeong / Kim, Min-Su / Park, Jungsoo / Mhin, Sungwook / Kim, Dongjin et al. | 2023
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Large area bare Cu-Cu interconnection using micro-Cu paste at different sintering temperatures and pressuresLi, W.Y. / Chen, C.T. / Ueshima, M. / Kobatake, T. / Suganuma, K. et al. | 2023
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Practical design of partially accelerated degradation test with two stress variables under step-stress loading schemeKim, Sungkyu / Kim, Yongsoo / Sung, Siil et al. | 2023
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Life test result on 4 channel VCELs chip used in 28Gb/s data transfer in space applicationJoly, S. / Ouattara, M. / Guibault, G. / How, Lip Sun / Bechou, L. / Gilard, O. / Deshayes, Y. et al. | 2023
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Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substrateFregolent, M. / Del Fiol, A. / De Santi, C. / Huber, C. / Meneghesso, G. / Zanoni, E. / Meneghini, M. et al. | 2023
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Accuracy estimation of low-current voltage drop method for junction temperature monitoring under DC power cyclingLu, Zhebie / Iannuzzo, Francesco et al. | 2023
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A study of field emission current in MEMS capacitors with bottom electrode covered by dielectric filmTheocharis, J. / Birmpiliotis, D. / Gardelis, S. / Papaioannou, G. et al. | 2023
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High temperature reliability of pressureless sintered Cu joints for power SiC die attachmentDai, J. / Wang, Y. / Grant, T. / Wang, W. / Mat, M. / Morshed, M. et al. | 2023
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Junction temperature balance control for paralleled SiC MOSFETs based on active gate controlLiu, Ping / Wang, Xin / Liu, Xin / Xiao, Kai / Liu, Yongjie / Peng, Yingzhou et al. | 2023
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Structural investigation of nanovoids around the interface of micro-vias by spherical aberration corrected scanning transmission electron microscopyHsieh, M.C. / Nishijima, M. / Jogo, K. / Zhang, Z. / Okumuara, R. / Yoshida, H. / Chen, C. / Suetake, A. / Honma, H. / Seto, H. et al. | 2023
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Mobile ions entering the IGBT gate oxide - electrical detection and failure localization by lock-in thermographyKäsbauer, M. / Dreher, P. / Sippel, M. / Schmidt, R. et al. | 2023
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Aging measurement and empirical modeling of BTI on FPGA using 16 nm FinFETs for static and dynamic stressesSobas, J. / Marc, F. et al. | 2023
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Reliability prediction of a 30 kW power electronics converterSchuderer, Jürgen / Bühler, Raffael / Delincé, François et al. | 2023
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Modelling SiC MOSFET module threshold voltage (V TH) and impact of parallel device ΔV TH on short circuit robustnessDeb, A. / Gonzalez, J. Ortiz / Jahdi, S. / Taha, M. / Mawby, P.A. / Alatise, O. et al. | 2023
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Investigation on temperature limitation and failure mechanism of SiC MOSFETs under avalanche conditionsFei, Haoyang / Liang, Lin / Zhang, Ziyang et al. | 2023
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Is there a No-Effect Level (NEL) for adverse effects on electromechanical components by volatile siloxanes?Rütters, M. / Kleemeier, M. / Schels, F. et al. | 2023
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Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approachesGhizzo, L. / Trémouilles, D. / Richardeau, F. / Vinnac, S. / Jamin, F. / Guibaud, G. et al. | 2023
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Reliability of the hybrid bonding level using submicrometric bonding padsLhostis, S. / Ayoub, B. / Frémont, H. / Moreau, S. / Mattei, J.-G. / Lamontagne, P. / Tournier, A. et al. | 2023
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RESAC: A redundancy strategy involving approximate computing for error-tolerant applicationsBalasubramanian, Padmanabhan / Maskell, Douglas L. / Prasad, Krishnamachar et al. | 2023
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Data-driven and physics-based reliability tests to failure of a power electronics converterMartino, Edoardo / Fairbrother, Andrew / Ghosh, Riddhi / Schuderer, Jürgen et al. | 2023
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Using X-ray imaging for the study of crack development in solder reliability testingRoumanille, P. / Lesseur, J. / Uzanu, J. / Le Trong, H. / Ben Romdhane, E. / Guédon-Gracia, A. / Frémont, H. et al. | 2023
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SiC power MOSFET overload detection, short-circuit protection and gate-oxide integrity monitoring using a switched resistors dual-channel gate-driverPicot-Digoix, M. / Richardeau, F. / Jouha, W. / Blaquière, J.-M. / Vinnac, S. / Azzopardi, S. / Le, T.-L. et al. | 2023
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Mission profile-based digital twin framework using functional mock-up interfaces for assessing system's degradation behaviourElsotohy, M. / Jaeschke, J. / Sehr, F. / Schneider-Ramelow, M. et al. | 2023
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Influence of thermal interface material using discrete Si-IGBTs and consideration of power cycling conditionsHeimler, Patrick / Günther, Marco / Künzel, Cesare / Lutz, Josef / Basler, Thomas et al. | 2023
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Enhanced size effects on shear performance and fracture behavior of BGA structure micro-scale Cu/Sn–3.0Ag–0.5Cu/Cu joints at low temperaturesLi, W.Y. / Chen, F. / Gui, J. / He, S.L. / Qin, H.B. / Huang, J.Q. et al. | 2023
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Mode analysis and fault-tolerant method of open-circuit fault for a three-level dual active bridge DC-DC converterWu, Jijun / Wang, Hanyu / Ma, Mingyao / Chen, Qiang / Liang, Jiacheng et al. | 2023
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Bias-dependent degradation of single quantum well on InGaN-based light emitting diodeCasu, C. / Buffolo, M. / Caria, A. / Piva, F. / De Santi, C. / Meneghesso, G. / Zanoni, E. / Meneghini, M. et al. | 2023
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Reliable development of an IMS-based SiC power moduleLee, Y. / Avilès, S. / Fukunaga, S. / Duchesne, C. / Lasserre, P. / Castellazzi, A. / Funaki, T. et al. | 2023
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Testability design of power distribution system considering noise immunity characteristicsLiu, W.M. / Chen, C. / Lin, Y.G. / Ye, X.R. / Zhai, G.F. / Lin, R.S. / Zheng, W. et al. | 2023
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Characterization and modeling of Single Event Transient propagation through standard combinational cellsAndjelkovic, Marko / Krstic, Milos et al. | 2023
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Wear-out analysis of a BESS converter under peak shaving and harmonic current compensationde Barros, Rodrigo Cassio / Gonçalves, Diuary / Cupertino, Allan Fagner / Mendes, Victor Flores / do Couto Boaventura, Wallace / Pereira, Heverton Augusto et al. | 2023
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Methodology of backside preparation applied on a MRAM to lead a logical investigation with a near-field probeDumas, Louise / Villeneuve-Faure, Christina / Marc, François / Fremont, Hélène / Guerin, Christophe / Bascoul, Guillaume et al. | 2023
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DC to AC analysis of HC vs. BTI damage in N-EDMOS used in single photon avalanche diode cellPitard, H. / Bravaix, A. / Federspiel, X. / Fillon, R. / Cacho, F. et al. | 2023
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Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: A temperature-dependent analysisPilati, M. / Buffolo, M. / Rampazzo, F. / Lambert, B. / Sommer, D. / Grünenpütt, J. / De Santi, C. / Meneghesso, G. / Zanoni, E. / Meneghini, M. et al. | 2023
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Ageing metallized polypropylene film capacitors laws confronted with the phenomenon of corrosionRochefort, Claire / Venet, Pascal / Clerc, Guy / Sari, Ali / Mitova, Radoslava / Wang, Miao-Xin / Bevilacqua, Pascal / Zitouni, Younes et al. | 2023
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Automated reliability calculation of failure rate, lifetime extrapolation and prediction for embedded Metal-Insulator-Metal capacitors using an optimized Time-Dependent-Dielectric-Breakdown modelFalidas, Konstantinos Efstathios / Everding, Maximilian B. / Viegas, Alison E. / Czernohorsky, Malte / Heitmann, Johannes et al. | 2023
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Test concept for a direct correlation between dislocations and the intrinsic degradation of lateral PIN diodes in GaN-on-Si under reverse biasStabentheiner, M. / Diehle, P. / Altmann, F. / Hübner, S. / Lejoyeux, M. / Taylor, A.A. / Wieland, D. / Pogany, D. / Ostermaier, C. et al. | 2023
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In-situ delamination detection in multi-layered semiconductor packagesWalter, T. / Khatibi, G. / Betzwar Kotas, A. / Kretschy, N. et al. | 2023
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Improving the reliability of power modules through layered diffusion solder interconnects – Comparative study based on experiments and FE-simulationOttinger, B. / Mathew, A. / König, S. / Albrecht, J. / Sprenger, M. / Müller, L. / Goth, C. / Franke, J. et al. | 2023
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Study on annealing effect of bipolar transistors at different temperatures after total dose irradiationMo, Rigen / Li, Pengwei / Lyu, He / Mei, Bo / Sun, Yi / Yu, Qingkui / Cao, Shuang / Wang, Qianyuan / Zhang, Hongwei et al. | 2023
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Investigation on composite materials use for EMI shielding in power electronics circuitsZITOUNA, Bessem / TLIG, Mohamed / SLAMA, J. BEN HADJ / KADI, Moncef et al. | 2023
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Self-heating of stressed VDMOS devices under specific operating conditionsVeljković, S. / Mitrović, N. / Jovanović, I. / Živanović, E. / Paskaleva, A. / Spassov, D. / Mančić, D. / Danković, D. et al. | 2023
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Investigation of time-dependent gate dielectric breakdown in recessed E-mode GaN MIS-HEMTs using ferroelectric charge trap gate stack (FEG-HEMT)Huang, Zhen-Hong / Yang, Tsung-Ying / Wu, Jui-Sheng / Liang, Yan-Kui / Hsu, Jen-Fu / Lin, Wei-Cheng / Wu, Tian-Li / Chang, Edward Yi et al. | 2023
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Influence of SiC chip thickness on the power cycling capability of power electronics assemblies – A comprehensive numerical studyZhao, D. / Letz, S. / Leib, J. / Schletz, A. et al. | 2023
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Early failure of high-power white LEDs for outdoor applications under extreme electrical stress: Role of silicone encapsulantCaria, A. / Fraccaroli, R. / Pierobon, G. / Castellaro, T. / Mura, G. / Ricci, P.C. / De Santi, C. / Buffolo, M. / Trivellin, N. / Zanoni, E. et al. | 2023
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Microstructural and micromechanical characterization of sintered nano-copper bump for flip-chip heterogeneous integrationJi, Xinrui / Du, Leiming / He, Shan / van Zeijl, Henk / Zhang, Guoqi et al. | 2023
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Impact of total ionizing dose on the alpha-soft error rate in FDSOI 28 nm SRAMsMoindjie, S. / Munteanu, D. / Autran, J.L. / Malherbe, V. / Gasiot, G. / Roche, P. et al. | 2023
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Research on intermittent fault of bond wire under thermal and vibration shock based on simulation and experimentsYang, W.X. / Zhang, Y. / Qiu, J. / Lv, K.H. et al. | 2023
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Iodine vapour based quality test for coating and potting materials of (power) electronic devicesMeier, M.R. / Schweigart, H. et al. | 2023
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Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applicationsSaid, N. / Harrouche, K. / Medjdoub, F. / Labat, N. / Tartarin, J.G. / Malbert, N. et al. | 2023
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FPGA implementation of a robust DTC-SVM based Sliding Mode Flux Observer for a double star induction motor: Hardware in the loop validationLatrech, F.Z. / Rhouma, A.B. / Khedher, A. et al. | 2023
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Electrothermal power cycling of GaN and SiC cascode devicesGunaydin, Y. / Jahdi, S. / Yu, R. / Yuan, Xibo / Alatise, Olayiwola / Ortiz Gonzalez, Jose et al. | 2023
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Investigation of the time dependent gate dielectric stability in SiC MOSFETs with planar and trench gate structuresLin, Wei-Cheng / Yu, Wei-Chen / Chen, Bang-Ren / Hsiao, Yu-Sheng / Huang, Zhen-Hong / Hung, Chia-Lung / Hsiao, Yi-Kai / Yeh, Nai-Jen / Kuo, Hao-Chung / Tu, Chang-Ching et al. | 2023
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Electro-thermo-mechanical modelling of a SiC MOSFET transistor under non-destructive short-circuitLoche-Moinet, Florent / Theolier, Loic / Woirgard, Eric et al. | 2023
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A modelling method of the on-state resistance of p-channel power MOSFETs under NBTI stressWang, Z.C. / Chen, C. / Wang, H.D. / Wang, C.Y. / Wang, Z.F. / Ye, X.R. et al. | 2023
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Calibration and efficient evaluation of electromigration lifetime for interconnect wire sizing of multi-port networksMilor, L. / Ghosh, S. et al. | 2023
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New reliability model for power SiC MOSFET technologies under static and dynamic gate stressZerarka, M. / Rustichelli, V. / Perrotin, O. / Reynes, J.M. / Tremouilles, D. / Azzopardi, S. / Serre, A. / Bergeret, F. / Allirand, L. / Coccetti, F. et al. | 2023
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An improved crack probability model for silicon oxide layers using three-parameter Weibull analysisUnterreitmeier, M. / Nagler, O. et al. | 2023
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Comparison of different statistical methods for prediction of lifetime of electrical connectors with short term testsShukla, Abhay / Martin, Robert / Probst, Roman / Song, Jian et al. | 2023
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Short-circuit protection scheme with efficient soft turn-off for power modulesDu, H. / Bayarsaikhan, Y. / Omura, I. et al. | 2023
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A model-based power switch fault diagnosis strategy for cascaded H-Bridge converterWang, Hanyu / Wu, Jiawei / Ma, Mingyao / Chen, Qiang et al. | 2023
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Investigating failure mode and mechanism of copper ribbon interconnections in operating photovoltaic modulesDelmonte, N. / Santoro, D. / Provenzale, L. / Cova, P. et al. | 2023
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A knowledge-constrained CNN-BiLSTM model for lithium-ion batteries state-of-charge estimationYan, Bei / Zheng, Wenjian / Tang, Diyin / LaiLi, Yuanjun / Xing, Yalan et al. | 2023
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Highly reliable micro-scale Cu sintered joint by oxidation-reduction bonding process under thermal cyclingKim, Min-Su / Kim, Dongjin / Roh, Myong-Hoon / Nishikawa, Hiroshi et al. | 2023
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Ruggedized sensor packaging with advanced die attach and encapsulation material for harsh environmentTay, Y.S. / Yang, L. / Zhang, H. / Kor, H.B. / Zhang, L. / Liu, H. / Gill, V. / Lambourne, A. / Li, K.H.H. / Chen, Z. et al. | 2023
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Impact of RF stress on different topologies of 100 nm X-band robust GaN LNAPinault, B. / Tartarin, J.G. / Saugnon, D. / Leblanc, R. et al. | 2023
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Single event burnout failures caused in silicon and silicon carbide power devices by single alpha particles emitted from radioactive nuclidesPocaterra, Marco / Ciappa, Mauro et al. | 2023
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Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustnessBenato, Andrea / De Santi, Carlo / Borga, Matteo / Bakeroot, Benoit / Filipek, Izabela Kuzma / Posthuma, Niels / Decoutere, Stefaan / Meneghesso, Gaudenzio / Zanoni, Enrico / Meneghini, Matteo et al. | 2023
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Junction temperature monitoring for cascode GaN devices using the Si MOSFET's body diode voltage dropLu, Zhebie / Iannuzzo, Francesco et al. | 2023
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Impact of temperature on dynamic characteristics of 4H-silicon carbide drift step recovery diodesYan, Xiaoxue / Liang, Lin / Yang, Zewei / Shang, Hai / Qing, Zhengheng et al. | 2023
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Synthetic data augmentation to enhance manual and automated defect detection in microelectronicsPhoulady, Adrian / Suleiman, Yara / Choi, Hongbin / Moore, Toni / May, Nicholas / Shahbazmohamadi, Sina / Tavousi, Pouya et al. | 2023
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Electro-thermal stress minimisation of motor-drive inverter switches by hybrid modulation strategy techniqueKwak, Jaedon / Castellazzi, Alberto et al. | 2023
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Automated endpointing in microelectronics failure analysis using laser induced breakdown spectroscopyHoveida, Pouria / Phoulady, Adrian / Choi, Hongbin / Suleiman, Yara / May, Nicholas / Moore, Toni / Shahbazmohamadi, Sina / Tavousi, Pouya et al. | 2023
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Reliability tests on millimetre wave 100 nm gate length process for safe operating area evaluation methodologyRobin, C. / Delcourt, S. / Theocharis, J. / Neyrolles, K. / Langrez, D. / Latti, J. / Papaioannou, G. et al. | 2023
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Online die temperature measurement using S-parameters in GaN-based power convertersPascal, Yoann / Daschner, Frank / Mönch, Stefan / Liserre, Marco / Höft, Michael / Quay, Rüdiger et al. | 2023
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Moisture absorption and desorption in epoxy mould compounds: Characterization of Fickian and non-Fickian behaviours in complex packagesTomas, Ariane / Frémont, Hélène / Malbert, Nathalie / Neffati, Mehdy / Lambert, Benoit et al. | 2023
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Micro-additives and their impact on tensile and fracture performance of solderSteenmann, A. / Richter, J. / Licht, T. et al. | 2023
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Brazing failure of inner power modules' interconnects using scattering parameter characterizationGopishetti, A. / Baffreau, S. / Vidal, P.-E. / Duchesne, C. / Long, T.L. et al. | 2023
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Precise estimation of dynamic junction temperature of SiC transistors for lifetime prediction of power modules used in three-phase invertersTeixeira, Alice / Cougo, Bernardo / Segond, Gilles / Morais, Lenin M.F. / Andrade, Marco / Tran, Duc Hoan et al. | 2023
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Investigation of temperature and flux effects on heavy ion induced degradation in SiC Schottky diodeYan, Xiaoyu / Hu, Peipei / Zhao, Shiwei / Chen, Qiyu / Cai, Li / Jiao, Yang / Yang, Jinhu / Li, Xinyu / Sun, Youmei / Liu, Jie et al. | 2023
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Correlation between 1064 nm laser attack and thermal behavior in STT-MRAMYazigy, N. / Postel-Pellerin, J. / Marca, V. Della / Sousa, R.C. / Di Pendina, G. / Canet, P. et al. | 2023
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Impact of neutron irradiation on SiC power MOSFETs after stress tests qualificationPintacuda, Francesco / Allegra, G. / Principato, F. et al. | 2023
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Investigation of edge computing hardware architectures processing tiny machine learning under neutron-induced radiation effectsLaurini, Luiz Henrique / dos Santos Martins, João Baptista / Bastos, Rodrigo Possamai et al. | 2023
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Avalanche ruggedness and failure mode of SiC trench MOSFETsTuncay, Sebnem / Zeng, Guang / de Falco, Giuseppe / Basler, Thomas et al. | 2023
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Effect of substrate thinning on heavy ion induced single event effect in silicon carbide power junction barrier Schottky diodesZhao, S.W. / Yan, X.Y. / Liu, Y.Z. / Hu, P.P. / Chen, Q.Y. / Li, Z.Z. / Zhai, P.F. / Zhang, T. / Jiao, Y. / Yang, J.H. et al. | 2023
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Impact of aging on the SEU immunity of FinFET-based embedded memory systemsConstante, A.A. / Balen, T.R. / Champac, V.H. / Poehls, L.B. / Vargas, F.L. et al. | 2023
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Prediction of the drift trend in piezoelectrically actuated MEMS mirror by 2D reliability modellingManzotti, Matteo / Rezvani, Zahra / Pedaci, Immacolata / Barbato, Paola Sabrina / Balsamo, Amalia / Losa, Stefano / Casuscelli, Valeria et al. | 2023
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Calibration methods and power cycling of double-side cooled SiC MOSFET power modulesLentzsch, T. / Schwabe, C. / Lutz, J. / Basler, T. et al. | 2023
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Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gatesGraff, A. / Simon-Najasek, M. / Hübner, S. / Lejoyeux, M. / Altmann, F. / Gao, V. Zhan / Rampazzo, F. / Meneghini, M. / Zanoni, E. / Lambert, B. et al. | 2023
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Evaluating reliability against SEE of embedded systems: A comparison of RTOS and bare-metal approachesDe Sio, C. / Azimi, S. / Sterpone, L. et al. | 2023
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Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stressFavero, D. / De Santi, C. / Stockman, A. / Nardo, A. / Vanmeerbeek, P. / Tack, M. / Meneghesso, G. / Zanoni, E. / Meneghini, M. et al. | 2023
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Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometersStrenaer, R. / Guhel, Y. / Gaquière, C. / Boudart, B. et al. | 2023
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Investigating the solder mask defects impact on leakage current on PCB under condensing humidity conditionsZhang, Kaichen / Bahman, Amir Sajjad / Iannuzzo, Francesco / Chopade, Amol Ramesh / Holst, Jørgen / Rao, Jyothsna Murli / Bahrebar, Sajjad / Ambat, Rajan et al. | 2023
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Bi-parameter thermal-mechanical reliability of miniaturised electromechanical RF relays for space applicationsMarozau, I. / Unterhofer, S. / Berry, M. / Aubry, G. / Gonin, P. / Enquebecq, R. / Dadras, M. / Sereda, O. et al. | 2023
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Editorial Board| 2023
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Study of different parameters influencing IGBT and diode robustness under short-circuit type III conditionsMysore, M.L. / Maitra, A. / Basler, T. / Lutz, J. / Baburske, R. / Niedernostheide, F.-J. / Schulze, H.-J. / Pfirsch, F. et al. | 2023
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Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEMShqair, M. / Sarraute, E. / Cazimajou, T. / Richardeau, F. et al. | 2023
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3D process simulation-assisted device failure analysis with virtual defect injection in IC layoutFiriti, Abdellatif / Samnani, Mehak / Bhattacherjee, Arpan / Singh, Arshdeep et al. | 2023
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Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stressTan, H.T. / Gao, Y. / Syaranamual, G.J. / Sasangka, W.A. / Foo, S.C. / Lee, K.H. / Arulkumaran, S. / Ng, G.I. / Thompson, C.V. / Gan, C.L. et al. | 2023
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A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operationCavaliere, A. / De Santi, C. / Meneghesso, G. / Zanoni, E. / Meneghini, M. et al. | 2023
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Investigating the degradation mechanisms of moisture on the reliability of integrated low-k stackMischler, Léo / Cartailler, Vivien / Imbert, Grégory / Duchamp, Geneviève / Frémont, Hélène et al. | 2023
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SMART: Selective MAC zero-optimization for neural network reliability under radiationRajappa, Anuj Justus / Reiter, Philippe / Sartori, Tarso Kraemer Sarzi / Laurini, Luiz Henrique / Fourati, Hassen / Mercelis, Siegfried / Famaey, Jeroen / Bastos, Rodrigo Possamai et al. | 2023
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Underfill material property dependence of lifetime and mechanical behavior of BGA package: EBSD and FEM investigationsKim, Dajung / Park, Jiyeon / Jang, Jeongki / Yang, Hyunseung / Kim, Kwangho / Oh, Chulmin / Kim, Dongjin et al. | 2023
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Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breakerTakamori, Taro / Wada, Keiji / Saito, Wataru / Nishizawa, Shin-ichi et al. | 2023
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An Eigendecomposition-based dynamic characteristics design method of three-phase grid-connected inverters with considering reliabilityLi, Hong / Zhou, Zexi / Lu, Yuanye / Wei, Mingbo / Pan, Jinchang et al. | 2023
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A reliability assessment methodology of system-in-package based virtual qualificationGuan, Shukai / Wan, Bo / Zhong, Jingyang / Fu, Guicui / Wang, Xiangfen et al. | 2023