Characterization and optimization of partially depleted SOI MOSFETs for high power RF switch applications (English)
- New search for: Im, Donggu
- New search for: Lee, Kwyro
- New search for: Im, Donggu
- New search for: Lee, Kwyro
In:
Solid-State Electronics
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90
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94-98
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2013
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Characterization and optimization of partially depleted SOI MOSFETs for high power RF switch applications
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Contributors:Im, Donggu ( author ) / Lee, Kwyro ( author )
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Published in:Solid-State Electronics ; 90 ; 94-98
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Publisher:
- New search for: Elsevier Ltd
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Publication date:2013-01-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 90
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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ForewordBawedin, Maryline et al. | 2013
- 2
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A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applicationsWan, Jing / Royer, Cyrille Le / Zaslavsky, Alexander / Cristoloveanu, Sorin et al. | 2013
- 12
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A physically-based threshold voltage definition, extraction and analytical model for junctionless nanowire transistorsTrevisoli, Renan Doria / Doria, Rodrigo Trevisoli / de Souza, Michelly / Pavanello, Marcelo Antonio et al. | 2013
- 18
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An analytical mobility model for square Gate-All-Around MOSFETsTienda-Luna, I.M. / Roldán, J.B. / Ruiz, F.G. / Blanque, C.M. / Gámiz, F. et al. | 2013
- 23
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On the extension of ET-FDSOI roadmap for 22nm node and beyondSampedro, C. / Gámiz, F. / Godoy, A. et al. | 2013
- 28
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Impact ionization induced dynamic floating body effect in junctionless transistorsYu, R. / Nazarov, A.N. / Lysenko, V.S. / Das, S. / Ferain, I. / Razavi, P. / Shayesteh, M. / Kranti, A. / Duffy, R. / Colinge, J.-P. et al. | 2013
- 34
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Subband splitting and surface roughness induced spin relaxation in (001) silicon SOI MOSFETsOsintsev, Dmitri / Baumgartner, Oskar / Stanojevic, Zlatan / Sverdlov, Viktor / Selberherr, Siegfried et al. | 2013
- 39
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Transistors on hybrid UTBB/Bulk substrates fabricated by local internal BOX dissolutionNguyen, P. / Andrieu, F. / Cassé, M. / Tabone, C. / Perreau, P. / Lafond, D. / Dansas, H. / Tosti, L. / Veytizou, C. / Landru, D. et al. | 2013
- 44
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Bandstructure and mobility variations in p-type silicon nanowires under electrostatic gate fieldNeophytou, Neophytos / Baumgartner, Oskar / Stanojevic, Zlatan / Kosina, Hans et al. | 2013
- 51
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Comprehensive study of the statistical variability in a 22nm fully depleted ultra-thin-body SOI MOSFETMohd Zain, Anis Suhaila / Markov, Stanislav / Cheng, Binjie / Asenov, Asen et al. | 2013
- 56
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UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regimeMd Arshad, M.K. / Makovejev, S. / Olsen, S. / Andrieu, F. / Raskin, J.-P. / Flandre, D. / Kilchytska, V. et al. | 2013
- 65
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Characterization of heavily doped SOI wafers under pseudo-MOSFET configurationLiu, F.Y. / Diab, A. / Ionica, I. / Akarvardar, K. / Hobbs, C. / Ouisse, T. / Mescot, X. / Cristoloveanu, S. et al. | 2013
- 73
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Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronicsLecavelier des Etangs-Levallois, A. / Lesecq, M. / Danneville, F. / Tagro, Y. / Lepilliet, S. / Hoel, V. / Troadec, D. / Gloria, D. / Raynaud, C. / Dubois, E. et al. | 2013
- 79
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Normally-off GaN MOSFETs on insulating substrateKim, Dong-Seok / Im, Ki-Sik / Kim, Ki-Won / Kang, Hee-Sung / Kim, Do-Kywn / Chang, Sung-Jae / Bae, Youngho / Hahm, Sung-Ho / Cristoloveanu, Sorin / Lee, Jung-Hee et al. | 2013
- 86
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Revisited parameter extraction methodology for electrical characterization of junctionless transistorsJeon, D.-Y. / Park, S.J. / Mouis, M. / Berthomé, M. / Barraud, S. / Kim, G.-T. / Ghibaudo, G. et al. | 2013
- 94
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Characterization and optimization of partially depleted SOI MOSFETs for high power RF switch applicationsIm, Donggu / Lee, Kwyro et al. | 2013
- 99
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Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-upHraziia / Makosiej, Adam / Palma, Giorgio / Portal, Jean-Michel / Bocquet, Marc / Thomas, Olivier / Clermidy, Fabien / Reyboz, Marina / Onkaraiah, Santhosh / Muller, Christophe et al. | 2013
- 107
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Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold regionHoltij, Thomas / Schwarz, Mike / Kloes, Alexander / Iñíguez, Benjamín et al. | 2013
- 116
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Modeling of low frequency noise in FD SOI MOSFETsEl Husseini, J. / Martinez, F. / Valenza, M. / Ritzenthaler, R. / Lime, F. / Iñiguez, B. / Faynot, O. / Le Royer, C. / Andrieu, F. et al. | 2013
- 121
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Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substratesDoria, Rodrigo Trevisoli / Martino, João Antonio / Simoen, Eddy / Claeys, Cor / Pavanello, Marcelo Antonio et al. | 2013
- 121
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Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45^o rotated substratesDoria, R. T. / Martino, J. A. / Simoen, E. / Claeys, C. / Pavanello, M. A. et al. | 2013
- 127
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A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configurationDiab, A. / Fernández, C. / Ohata, A. / Rodriguez, N. / Ionica, I. / Bae, Y. / Van Den Daele, W. / Allibert, F. / Gámiz, F. / Ghibaudo, G. et al. | 2013
- 134
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Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistorsChang, Sung-Jae / Cheralathan, Muthupandian / Bawedin, Maryline / Iniguez, Benjamin / Bayraktaroglu, Burhan / Lee, Jong-Hyun / Lee, Jung-Hee / Cristoloveanu, Sorin et al. | 2013
- 143
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Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performancesBen Akkez, Imed / Fenouillet-Beranger, Claire / Cros, Antoine / Perreau, Pierre / Haendler, Sébatien / Weber, Olivier / Andrieu, François / Pellissier-Tanon, D. / Abbate, F. / Richard, C. et al. | 2013
- 149
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Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAMAlmeida, Luciano Mendes / Sasaki, Kátia Regina Akemi / Caillat, Christian / Aoulaiche, Marc / Collaert, Nadine / Jurczak, Malgorzata / Simoen, Eddy / Claeys, Cor / Martino, João Antonio et al. | 2013
- 155
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Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devicesAgopian, Paula Ghedini Der / Bordallo, Caio Cesar Mendes / Simoen, Eddy / Claeys, Cor / Martino, João Antonio et al. | 2013
- 160
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DC and low frequency noise performances of SOI p-FinFETs at very low temperatureAchour, H. / Talmat, R. / Cretu, B. / Routoure, J.-M. / Benfdila, A. / Carin, R. / Collaert, N. / Simoen, E. / Mercha, A. / Claey, C. et al. | 2013
- IFC
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Editorial Board| 2013