Subject Index (English)
In:
Physica E: Low-Dimensional Systems and Nanostructures
;
23
, 3-4
;
497-499
;
2004
-
ISSN:
- Article (Journal) / Electronic Resource
-
Title:Subject Index
-
Published in:Physica E: Low-Dimensional Systems and Nanostructures ; 23, 3-4 ; 497-499
-
Publisher:
-
Publication date:2004-01-01
-
Size:3 pages
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Electronic Resource
-
Language:English
-
Source:
Table of contents – Volume 23, Issue 3-4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 237
-
Structural and optical investigations of 1-, 2-, and 3-dimensional InAs quantum dot arraysHeidemeyer, H / Müller, C / Schmidt, O.G et al. | 2004
- 243
-
Growth of Ge islands on prepatterned Si (001) substratesZhong, Zhenyang / Halilovic, A / Lichtenberger, H / Schäffler, F / Bauer, G et al. | 2004
- 248
-
Site selective growth of Ge quantum dots on AFM-patterned Si substratesHirai, A / Itoh, K.M et al. | 2003
- 253
-
Growth of three-dimensional quantum dot crystals on patterned GaAs (001) substratesKiravittaya, S / Heidemeyer, H / Schmidt, O.G et al. | 2004
- 260
-
Precise semiconductor nanotubes and nanoshells fabricated on (110) and (111) Si and GaAsPrinz, V.Ya et al. | 2004
- 269
-
Lithographic positioning, areal density increase and fluid transport in rolled-up nanotubesDeneke, Ch / Schmidt, O.G et al. | 2004
- 274
-
Preparation of curved two-dimensional electron systems in InGaAs/GaAs-microtubesMendach, S / Schumacher, O / Heyn, Ch / Schnüll, S / Welsch, H / Hansen, W et al. | 2004
- 280
-
Free-standing Si/SiGe micro- and nano-objectsZhang, L / Golod, S.V / Deckardt, E / Prinz, V / Grützmacher, D et al. | 2004
- 285
-
InAs/GaAs (111)A heteroepitaxial systemsYamaguchi, H / Kanisawa, K / Miyashita, S / Hirayama, Y et al. | 2004
- 293
-
Heterostructures overgrown on GaAs corner substratesSchuh, D / Grayson, M / Bichler, M / Abstreiter, G et al. | 2004
- 298
-
Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPEMotohisa, J / Takeda, J / Inari, M / Noborisaka, J / Fukui, T et al. | 2004
- 305
-
Structural and optical properties of vertically aligned InP nanowires grown by metal organic vapor phase epitaxyWatanabe, Y / Yamamoto, N / Bhunia, S / Kawamura, T / Fujikawa, S et al. | 2004
- 309
-
Gated spin relaxation in (110)-oriented quantum wellsHenini, M / Karimov, O.Z / John, G.H / Harley, R.T / Airey, R.J et al. | 2004
- 315
-
Growth of GaAs nanostructures by area selective epitaxy by migration-enhanced epitaxyToda, T / Hasegawa, T / Iwai, T / Uehara, T / Horikoshi, Y et al. | 2004
- 320
-
Ge dots on Si (111) and (100) surfaces with SiO2 coverage: Raman studyVolodin, V.A / Efremov, M.D / Orekhov, D.A / Nikiforov, A.I / Pchelyakov, O.P / Ulyanov, V.V / Yakimov, A.I / Dvurechenskii, A.V et al. | 2004
- 324
-
Lateral junctions for high-density integration of optoelectronic devicesVaccaro, P.O / Dharmarasu, N / Saravanan, S / Zanardi Ocampo, J.M / Kubota, K / Saito, N et al. | 2003
- 329
-
Comparative study of and InGaAs single quantum well laser diodesDialynas, G.E / Deligeorgis, G / Le Thomas, N / Hatzopoulos, Z / Pelekanos, N.T et al. | 2004
- 334
-
Single-step growth of InGaAsP/InP laser array on patterned InP substrateRakovics, V / Serényi, M / Püspöki, S et al. | 2004
- 339
-
Growth of M-plane GaN on g-LiAlO2(100): the role of Ga adsorption/desorptionBrandt, O. / Jun Sun, Y. / Daweritz, L. / H. Ploog, K. et al. | 2004
- 339
-
Growth of M-plane GaN on γ-: the role of Ga adsorption/desorptionBrandt, Oliver / Jun Sun, Yue / Däweritz, Lutz / H. Ploog, Klaus et al. | 2004
- 347
-
Selective area growth of GaInNAs/GaAs by MOVPEOlsson, F / Mion, G / Sun, Y.T / Sundgren, P / Baskar, K / Armani, N / Hammar, M / Lourdudoss, S et al. | 2004
- 352
-
Quantum wells of dilute nitrides grown on GaAs by molecular beam epitaxyArnoult, A / Gonzalez-Posada, F / Blanc, S / Bardinal, V / Fontaine, C et al. | 2004
- 356
-
Influence of substrate misorientation and growth temperature on N incorporation in InGaAsN/GaAs quantum wells grown on B GaAsMiguel-Sánchez, J / Guzmán, A / Ulloa, J.M / Hierro, A / Muñoz, E et al. | 2004
- 362
-
Characterization by X-ray diffraction and electron microscopy of GaInAs and GaAsN single layers and quantum wells grown on GaAsVarlet, H / Curtil, C / Alfonso, C / Burle, N / Arnoult, A / Fontaine, C / Laügt, M et al. | 2003
- 370
-
Self-patterned Si surfaces as templates for Ge islands orderingRonda, A / Berbezier, I et al. | 2004
- 377
-
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxyMantovani, V / Sanguinetti, S / Guzzi, M / Grilli, E / Gurioli, M / Watanabe, K / Koguchi, N et al. | 2003
- 384
-
Self-assembled GaAs/AlGaAs quantum dots by molecular beam epitaxy and in situ AsBr3 etchingRastelli, A / Songmuang, R / Schmidt, O.G et al. | 2004
- 390
-
Tuning of long-wavelength emission in InxGa1−xAs quantum dot structuresPassaseo, A / Tasco, V / Tarantini, I / De Giorgi, M / Todaro, M.T / De Vittorio, M / Cingolani, R et al. | 2004
- 396
-
Electrical characterisation of local electronic properties of self-assembled semiconductor nanostructures using AFMDecossas, S / Marchand, J.J / Brémond, G et al. | 2004
- 401
-
Mechanisms of self-organization of Ge/Si(001) quantum dotsLe Thanh, V et al. | 2004
- 410
-
Effects of nanocrystal shape on the physical properties of colloidal ZnO quantum dotsQu, Fanyao / Santos, D.R Jr. / Dantas, N.O / Monte, A.F.G / Morais, P.C et al. | 2004
- 416
-
Photoluminescence of GeSi/Si(001) self-assembled islands with dome and hut shapeNovikov, Alexey V / Shaleev, Mihail V / Lobanov, Dmitry N / Yablonsky, Artem N / Vostokov, Nikolay V / Krasilnik, Zaharij F et al. | 2004
- 421
-
Shape, facet evolution and photoluminescence of Ge islands capped with Si at different temperaturesStoffel, M / Kar, G.S / Denker, U / Rastelli, A / Sigg, H / Schmidt, O.G et al. | 2004
- 428
-
Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC(0001)Aı̈t-Mansour, K / Dentel, D / Bischoff, J.L / Kubler, L / Diani, M / Barski, A / Derivaz, M / Noé, P et al. | 2004
- 435
-
Continuous wavelength tuning of InAs quantum dots on InP and substrates by chemical-beam epitaxyGong, Q / Nötzel, R / van Veldhoven, P.J / Wolter, J.H et al. | 2004
- 442
-
Transient-enhanced Si diffusion on natural-oxide-covered Si(001) nano-structures during vacuum annealingLichtenberger, H / Mühlberger, M / Schelling, C / Schwinger, W / Senz, S / Schäffler, F et al. | 2004
- 449
-
Carrier recombination kinetics in (311)A InGaAs sidewall quantum wiresAlderighi, D / Zamfirescu, M / Gurioli, M / Vinattieri, A / Colocci, M / Sanguinetti, S / Nötzel, R / Povolotskyi, M / Gleize, J / Di Carlo, A et al. | 2003
- 455
-
Local band gap modulation of AlGaAs grown on patterned GaAs substratesLimmer, W / Bitzer, K / Sauer, R et al. | 2003
- 461
-
Structure and photoluminescence study of type-II GaAs quantum wires and dots grown on nano-faceted (311)A surfaceEfremov, M.D / Volodin, V.A / Sachkov, V.A / Preobrazhenskii, V.V / Semyagin, B.R / Marin, D.V / Matvienko, R.S / Ledentsov, N.N / Soshnikov, I.P / Litvinov, D et al. | 2004
- 466
-
Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal substratesMonte, A.F.G / Soler, M.A.G / da Silva, S.W / Rodrigues, B.B.D / Morais, P.C / Quivy, A.A / Leite, J.R et al. | 2004
- 471
-
Growth and optical properties of Ge/Si quantum dots formed on patterned substratesNguyen, Lam.H / Nguyen-Duc, T.K / Le Thanh, V / d'Avitaya, F.A / Derrien, J et al. | 2004
- 476
-
Site-controlled quantum dots grown in inverted pyramids for photonic crystal applicationsPelucchi, E / Watanabe, S / Leifer, K / Dwir, B / Kapon, E et al. | 2004
- 482
-
Migration-enhanced epitaxy (MEE) growth of five-layer asymmetric coupled quantum well (FACQW) and its cross-sectional STM observationNoh, Joo-Hyong / Hasegawa, Shigehiko / Suzuki, Tatsuya / Arakawa, Taro / Tada, Kunio / Asahi, Hajime et al. | 2004
- 487
-
Study of YBaCuO quasi-two-dimensional crystalline structure by light scatteringRumyantsev, V.V. et al. | 2004
- 491
-
Index of Authors and Papers| 2004
- 497
-
Subject Index| 2004
- CO2
-
Inside Front Cover/Editorial Board page| 2004
- iii
-
Proceedings title pageSchmidt, O.G et al. | 2004
- iv
-
Received date page| 2004
- ix
-
Contents| 2004
- v
-
PrefaceSchmidt, Oliver G et al. | 2004
- xiii
-
List of Authors| 2004