Comparison between p-type dopants for shallow junction formation by diffusion from an ion implanted silicide (English)
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In:
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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39
, 1-4
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330-333
;
1989
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Comparison between p-type dopants for shallow junction formation by diffusion from an ion implanted silicide
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Contributors:Lippens, P. ( author ) / Maex, K. ( author ) / Van Den Hove, L. ( author ) / De Keersmaecker, R. ( author )
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Published in:
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Publisher:
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Publication date:1989-01-01
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Size:4 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 39, Issue 1-4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Structural modifications induced by electronic energy deposition during the slowing down of heavy ions in matterToulemonde, M. / Balanzat, E. / Bouffard, S. / Jousset, J.C. et al. | 1989
- 7
-
Modeling of concentration profiles from very high dose ion implantationBunker, S.N. / Armini, A.J. et al. | 1989
- 11
-
Computer simulation of the effect of disordered surface layers on the reflection of phosphorus ions from silicon (100) crystalline targets in grazing incidence ion implantationOura, Kenjiro / Ugawa, Hiroaki / Shoji, Fumiya / Hanawa, Teruo et al. | 1989
- 15
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Stopping powers of 1.5–7.2 MeV 4He ions in Havar, nickel, Kapton and MylarKiss, Á.Z. / Somorjai, E. / Räisänen, J. / Rauhala, E. et al. | 1989
- 18
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Electronic-energy-loss-assisted creep in heavy-ion-irradiated amorphous Fe85B15Audouard, A. / Balanzat, E. / Jousset, J.C. / Fuchs, G. / Lesueur, D. / Thomé, L. et al. | 1989
- 22
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High energy Li implanted profiles in siliconBehar, M. / Weiser, M. / Kalbitzer, S. / Fink, D. / Grande, P.L. et al. | 1989
- 26
-
Nonlinear phenomena in hydrogen implantation into (100) siliconCerofolini, G.F. / Meda, L. / Volpones, C. / Dierckx, R. / Mercurio, G. / Anderle, M. / Canteri, R. / Cembali, F. / Fabbri, R. / Servidori, M. et al. | 1989
- 30
-
Channeling and backscattering of low energy ionsKato, M. / Katayama, M. / Chassé, T. / Aono, M. et al. | 1989
- 35
-
Secondary ion generation mechanism studied by ISS-SIMS and work function measurementsKawatoh, Eizoh / Terada, Norihito / Shimizu, Ryuichi / Kang, Hee Jae et al. | 1989
- 40
-
RBS analysis of beam-processed microarea by focused MeV ion beamKinomura, A. / Takai, M. / Matsuo, T. / Ujiie, S. / Namba, S. / Satou, M. / Kiuchi, M. / Fujii, K. / Shiokawa, T. et al. | 1989
- 43
-
Bombardment-induced compositional change with alloys, oxides, oxysalts, and halidesKelly, Roger et al. | 1989
- 57
-
Surface composition of CoNi alloys under Ar+ ion bombardmentKurokawa, A. / Tezuka, M. / Takegoshi, K. / Kudo, M. / Shimizu, R. et al. | 1989
- 60
-
Simulation of the growth of inert gas bubbles near the surface of an amorphous alloyKnuyt, G. / D'Olieslaeger, M. / De Schepper, L. / Stals, L.M. et al. | 1989
- 64
-
The role of point defects in ion-bombardment-enhanced and dopant-enhanced grain growth in silicon thin filmsAtwater, Harry A. / Thompson, Carl V. / Kim, Hyoung-June et al. | 1989
- 68
-
Lattice location study on krypton atoms in aluminium by means of the channelling methodYagi, Eiichi et al. | 1989
- 72
-
Low-energy ion beams, molecular beam epitaxy, and surface morphologyTsao, J.Y. / Chason, E. / Horn, K.M. / Brice, D.K. / Picraux, S.T. et al. | 1989
- 81
-
Angle and energy distributions of sputtered particles from molybdenum (110) surfacesChakarov, I.R. / Cherepin, V.T. / Karpuzov, D.S. / Kosyachkov, A.A. / Vichev, R.G. et al. | 1989
- 86
-
Study of the sputter rate of thin aluminium layers deposited on polymer (PET) substratesDe Puydt, Y. / Bertrand, P. et al. | 1989
- 91
-
Ejection pattern of sputtered atoms from Cu(100) under 10 keV Ar+ ion bombardmentNagayama, Takahisa / Noguchi, Kazuhiko / Sasaki, Shigeo / Shimizu, Ryuichi et al. | 1989
- 95
-
Fluence- and temperature-dependence of sputtering yield by 25 keV He-ion bombardment on tungsten and niobiumTomita, Michio / Masumori, Katsuhiro et al. | 1989
- 99
-
Novel method in rf bias sputteringNomura, Ichirou / Miyazaki, Takayuki / Nishimura, Takeo et al. | 1989
- 104
-
Recent progress in understanding ion-beam mixing of metalsRehn, L.E. / Okamoto, P.R. et al. | 1989
- 114
-
Ion induced mixing in Al/Pd thin filmsLee, R.Y. / Whang, C.N. / Kim, T.K. / Kim, S.O. / Smith, R.J. et al. | 1989
- 118
-
Amorphization in boron-steels by Xe ion beam mixingSakamoto, Isao / Hayashi, Nobuyuki / Furubayashi, Bunji / Tanoue, Hisao et al. | 1989
- 122
-
Temperature dependence of ion-beam mixing in Fe/Zr bilayersDing, Fu-Rong / Okamoto, P.R. / Rehn, L.E. et al. | 1989
- 126
-
Ion beam mixing at the Fe/SiO2 interfaceBattaglin, G. / Lo Russo, S. / Paccagnella, A. / Polato, P. / Principi, G. et al. | 1989
- 130
-
Grain growth and phase morphology in ion beam mixed, two phase NiAl and NiCrAl alloysAlexander, Dale / Was, Gary / Eridon, James et al. | 1989
- 136
-
Formation of the icosahedral AlFe phase by ion beam mixingHohmuth, K. / Heera, V. / Rauschenbach, B. et al. | 1989
- 141
-
Ion beam mixing in Al/Fe-bilayersRauschenbach, B. / Hohmuth, K. / Küchler, R. / Posselt, M. et al. | 1989
- 144
-
Ion induced phase precipitation and growth in thin films: Fractals and dendritesHuang, L.J. / Ding, J.R. / Li, H-D. / Liu, B.X. et al. | 1989
- 148
-
Picosecond diffusion in a thermal spike during ion mixingIbe, Eishi et al. | 1989
- 153
-
Low energy ion beam mixing of metal-copper multilayersKing, B.V. / Puranik, S.G. / Sobhan, M.A. / MacDonald, R.J. et al. | 1989
- 158
-
Crystalline orientation control by the IVD methodAndoh, Y. / Ogata, K. / Yamaki, H. / Sakai, S. et al. | 1989
- 162
-
Property modification of Ag films by ion assisted depositionPan, Xianzheng / Pan, Feng / Yang, Yezhi / Yao, Songnian et al. | 1989
- 166
-
Variation of crystallization with arrival ratio in titanium nitride films formed by dynamic mixing methodSatou, M. / Fujii, K. / Kiuchi, M. / Fujimoto, F. et al. | 1989
- 170
-
Development of ion mixing equipment for R&D use and preparation of tin films by N2 gas assisted ion beam mixingKunibe, T. / Tagomori, K. / Sumiya, T. / Chida, N. / Matsuura, M. / Sakurada, Y. et al. | 1989
- 174
-
Titanium nitride deposited by dual ion beamsIto, H. / Yoshida, Y. / Yamaji, S. / Maeyama, Y. / Ina, T. / Minowa, Y. et al. | 1989
- 178
-
Properties of aluminum nitride films by an ion beam and vapor deposition methodOgata, K. / Andoh, Y. / Kamijo, E. et al. | 1989
- 182
-
Computer simulation of ion beam enhanced deposition of silicon nitride filmsJiankun, Zhou / Youshan, Chen / Xianghuai, Liu / Shichang, Zou et al. | 1989
- 185
-
Synthesis of silicon nitride films by ion beam enhanced depositionXianghuai, Liu / Bin, Xue / Zhihong, Zheng / Zuyao, Zhou / Shichang, Zou et al. | 1989
- 190
-
Thermal stability of silicon nitride coatings produced by ion assisted depositionGrabowski, K.S. / Kahn, A.D.F. / Donovan, E.P. / Carosella, C.A. et al. | 1989
- 194
-
New trends in SIMOXVan Ommen, A.H. et al. | 1989
- 203
-
Oxygen-redistribution process in SIMOXYoshino, A. / Kasama, K. / Sakamoto, M. et al. | 1989
- 207
-
Evaluation of SOI/SIMOX substrates using photoconductive frequency resolved spectroscopy (PCRFS)Homewood, K.P. / Reeson, K.J. / Lourenco, M.A. / Hemment, P.L.F. / Davis, J.R. et al. | 1989
- 210
-
Nucleation and growth of SiO2 precipitates in SOI/SIMOX related materials — Dependence upon damage and atomic oxygen profilesHemment, P.L.F. / Reeson, K.J. / Robinson, A.K. / Stoemenos, J. / Kilner, J.A. / Chater, R.J. / Celler, G.K. / Davis, J.R. et al. | 1989
- 215
-
A SIMS and TEM analysis of the growth mechanisms of annealed buried SiO2 layers formed by incremental high-dose oxygen Ion implantation into silicon at 150 keVGriffin, C.J. / Kilner, J.A. / Chater, R.J. / Staton-Bevan, A. / Reeson, K.J. / Hemment, P.L.F. / Davis, J.R. et al. | 1989
- 220
-
Investigation of soi material formed by high-dose oxygen and nitrogen implantationSchork, Rainer / Ryssel, Heiner / Dehm, Christine et al. | 1989
- 225
-
Nitrogen-15 isotope tracer studies of buried nitride layer formation by high dose implantationKilner, J.A. / Chater, R.J. / Reeson, K.J. / Hemment, P.L.F. / Davis, J.R. et al. | 1989
- 230
-
Si3N4 crystallization during high temperature nitrogen implantation into siliconBussmann, U. / Meerbach, F.H.J. / Te Kaat, E.H. et al. | 1989
- 234
-
Two kinds of defect centers observed in sin films prepared by ECR plasma CVD methodIzumi, T. / Shibuya, M. / Matsumori, T. / Hirao, T. / Kamada, T. et al. | 1989
- 238
-
Formation of silicon carbide layers by the ion beam technique and their electrical propertiesKimura, Tadamasa / Yugo, Shigemi / Zhou, Song Bao / Adachi, Yoshio et al. | 1989
- 242
-
Very high current ECR ion sourceShimada, Masaru / Watanabe, Iwao / Torii, Yasuhiro et al. | 1989
- 246
-
Recent progress in refractory-metal silicide formation by ion beam mixing and its applications to VLSLOkabayashi, Hidekazu et al. | 1989
- 253
-
Mesotaxy: Synthesis of buried single-crystal silicide layers by implantationWhite, Alice E. / Short, K.T. / Dynes, R.C. / Hull, R. / Vandenberg, J.M. et al. | 1989
- 259
-
Processes in implanted silicon stimulated by silicidation reactionsGerasimenko, N.N. / Vasiljev, S.V. / Kalinin, V.V. et al. | 1989
- 268
-
Chemical and physical processes during the formation of MoSi2 by ion-beam mixingVályi, Géza / Ryssel, Heiner / Möller, Wolfhard et al. | 1989
- 272
-
Effects of dopants on the epitaxial growth of MoSi2 on (111)SiCheng, J.Y. / Chen, L.J. et al. | 1989
- 276
-
Formation of buried epitaxial Co silicides by ion implantationKohlhof, K. / Mantl, S. / Stritzker, B. / Jäger, W. et al. | 1989
- 280
-
Anneal behaviour of compositional and electrical characteristics of vanadium implanted siliconVidwans, Subhaga / Salvi, V.P. / Rangwala, A.A. / Arora, B.M. / Jain, Animesh K. / Kuldeep et al. | 1989
- 284
-
Mössbauer spectroscopy study of epitaxial and buried CoSi layersVantomme, A. / Dézsi, I. / Langouche, G. et al. | 1989
- 288
-
Formation of titanium silicide and shallow junctions by BF2+ implantation and low temperature annealingDezhang, Zhu / Haochang, Pan / Fuying, Zhu / Jianqing, Cao / Dexin, Cao et al. | 1989
- 291
-
Nickel and cobalt silicide formation by broad and focused ion beam implantationAoki, T. / Gamo, K. / Namba, S. / Shiokawa, T. / Toyoda, K. / Okabayashi, H. / Mori, H. / Fujita, H. et al. | 1989
- 297
-
Effects of silicide formation on the removal of end-of-range ion implantation damage in siliconLur, W. / Cheng, J.Y. / Chu, C.H. / Wang, M.H. / Lee, T.C. / Wann, Y.J. / Chao, W.Y. / Chen, L.J. et al. | 1989
- 302
-
Properties of sputtered tungsten silicide films deposited with different argon pressuresHara, Tohru / Takahashi, Shuya et al. | 1989
- 306
-
Radiation damage and amorphization of silicon by 6 MeV Ni ion implantationLindner, J.K.N. / Domres, R. / Te Kaat, E.H. et al. | 1989
- 311
-
Ion-beam-induced epitaxial crystallization of implanted and chemical vapor deposited amorphous siliconLa Ferla, A. / Priolo, F. / Spinella, C. / Rimini, E. / Baroetto, F. / Ferla, G. et al. | 1989
- 318
-
Damage formation and annealing of high energy ion implantation in SiTamura, M. / Suzuki, T. et al. | 1989
- 330
-
Comparison between p-type dopants for shallow junction formation by diffusion from an ion implanted silicideLippens, P. / Maex, K. / Van Den Hove, L. / De Keersmaecker, R. et al. | 1989
- 334
-
Morphology of the silicon implanted interface of a polysilicon/single crystal silicon structureOkuda, S. / Ogawa, S. / Kouzaki, T. / Yoshida, T. / Toujou, F. / Sinclair, R. et al. | 1989
- 338
-
Formation of doped polycrystal si layers through solid phase pegrowthTakahashi, M. / Wakabayashi, S. / Nishida, A. / Kitahara, M. / Inada, T. et al. | 1989
- 343
-
Radiation-enhanced diffusion of implanted impurities in amorphous SiPriolo, F. / Poate, J.M. / Jacobson, D.C. / Batstone, J.L. / Campisano, S.U. et al. | 1989
- 347
-
Reduction of phosphorus transient enhanced diffusion due to extended defects in ion implanted siliconServidori, M. / Cembali, F. / Fabbri, R. / Gabilli, E. / Negrini, P. / Solmi, S. / Zaumseil, P. / Winter, U. / Anderle, M. / Canteri, R. et al. | 1989
- 352
-
Rapid thermal annealing of arsenic-implanted poly-Si layers on insulatorTakai, M. / Izumi, M. / Yamamoto, T. / Namba, S. / Minamisono, T. et al. | 1989
- 357
-
Rapid thermal annealing of hot implants in siliconCoffa, S. / Calcagno, L. / Spinella, C. / Campisano, S.U. / Foti, G. / Rimini, E. et al. | 1989
- 362
-
Pileup of arsenic implanted into silicon with high doses at surfacesYokota, Katsuhiro / Ohtsuki, Koichi / Ishihara, Shinji / Kimura, Itsuro et al. | 1989
- 366
-
Solid-phase regrowth of amorphous silicon layers in the presence of the point defect fluxBuravlyov, A.V. / Italyantsev, A.G. / Krasnobayev, Z.Ya. / Mordkovich, V.N. / Vyatkin, A.F. et al. | 1989
- 370
-
The effect of sputtered impurities on the deep ion-implanted P+N junction in siliconZamastil, Jaroslav / May, Jan et al. | 1989
- 372
-
〈001〉 Interstitial complexes in siliconGerasimenko, N.N. / Gutsev, G.L. / Myakenkaya, C.S. et al. | 1989
- 377
-
A comparative study of D and H implantation-induced shallow donors in SiOhmura, Y. / Iwaki, M. / Shiokawa, T. / Toyoda, K. / Namba, S. / Okabe, Y. et al. | 1989
- 381
-
Hydrogen implantation into (100) silicon: A study of the released damageMeda, L. / Cerofolini, G.F. / Dierckx, R. / Mercurio, G. / Servidori, M. / Cembali, F. / Anderle, M. / Canteri, R. / Ottaviani, G. / Claeys, C. et al. | 1989
- 386
-
Ion implantation and hydrogen passivation in amorphous silicon filmsGalloni, R. / Tsuo, Y.S. / Zignani, F. et al. | 1989
- 389
-
Defects after preamorphisation and annealingThornton, J. / Paus, K.C. / Webb, R.P. / Albu-Yaron, A. / Booker, G.R. / Wilson, I.H. et al. | 1989
- 393
-
Influence of SiO2 cap layers on lateral solid-phase epitaxy of implanted amorphous Si filmsIshiwara, H. / Tomita, N. / Dan, T. / Furukawa, S. et al. | 1989
- 397
-
Structural and electrical properties of Ge-ion-implanted Si layerKuriyama, K. / Aoki, S. / Satoh, M. / Nakano, M. et al. | 1989
- 400
-
Silicon-on-insulator structures by SIMOX and SIMNI procedures studied by Raman scattering and Rutherford backscatteringTakai, M. / Ryssel, H. / Schork, R. / Ueyama, N. / Minamisono, T. / Namba, S. et al. | 1989
- 405
-
Ion implantation in Si/Si1−xGex epitaxial layers and superlatticesMantl, S. / Holländer, B. / Jäger, W. / Kabius, B. / Jorke, H.J. / Kasper, E. et al. | 1989
- 409
-
Recovery of carbon-implanted silicon and germaniumYamaguchi, S. / Fujino, Y. / Naramoto, H. / Ozawa, K. et al. | 1989
- 413
-
Formation of shallow P+-N junctions by dual Ge+/B+ implantationFerreiro, A. / Biasse, B. / Papon, A.M. / Pontcharra, J. / Truche, R. et al. | 1989
- 417
-
Radiation damage in Ge induced by Te+ implantation near channeling conditionsKarpuzov, D.S. / Kalitzova, M.G. / Vitali, G. / Kostic, S. / Armour, D.G. / Carter, G. et al. | 1989
- 423
-
Compensation-like effects in BF2+ + As+ and BF2+ + P+ implanted siliconHsu, S.N. / Chen, L.J. et al. | 1989
- 428
-
Carrier concentration profiles in multiply implanted silicon with 0.5–7.5 MeV phosphorusYuguang, Wu / Huixing, Zhang / Xioji, Zhang / Yan, Luo / Tonghe, Zhang / Zhuen, Han et al. | 1989
- 433
-
Ion implantation for GaAs IC fabricationYamazaki, Hajime et al. | 1989
- 441
-
Lateral control of impurity-induced disordering of AlAs/GaAs superlatticeKawabe, M. / Ikeda, Y. / Ogawa, K. / Shiraishi, T. / Yokoyama, S. / Nanighi, Y. / Bando, Y. et al. | 1989
- 445
-
Investigation of defects in weakly damaged ion implanted GaAs layersWesch, W. / Jordanov, A. / Gärtner, K. / Götz, G. et al. | 1989
- 449
-
Ion beam induced epitaxy of (100) and (111) GaAsJohnson, S.T. / Elliman, R.G. / Williams, J.S. et al. | 1989
- 453
-
Diffusion and activation mechanisms in ion-implanted GaAsMorris, N. / Sealy, B.J. et al. | 1989
- 457
-
Optical and electrical properties of C+-implanted GaAsShigetomi, Shigeru / Makita, Yunosuke / Mori, Masahiko / Koga, Yutaka / Phelan, Paul / Ohnishi, Nobukazu / Shibata, Hajime / Matsumori, Tokue et al. | 1989
- 461
-
Gallium arsenide surface modification by low-energy argon and nitrogen ion implantationWang, Y.G. / Ashok, S. et al. | 1989
- 466
-
XPS and AES investigations of silicon oxidation by ion-implanted oxygenLabunov, V.A. / Protasevich, P.V. et al. | 1989
- 469
-
Characterization of semiconductor heterointerface and YBaCuO superconductor using ion-beam induced luminescence methodTaguchi, Tsunemasa / Otera, Hiroshi / Hiraki, Akio et al. | 1989
- 476
-
A new type of solid phase epitaxy of AlxGa1−xSb in evaporated Al/GaSb substrate by electron-beam irradiation (electron-beam epitaxy)Wada, Takao / Maeda, Yoshinobu / Ichimura, Masaya et al. | 1989
- 480
-
Conversion of conduction in p-InAs by Ar+ ion implantationGerasimenko, N.N. / Myasnikov, A.M. / Nesterov, A.A. / Obodnikov, V.I. / N Safronov, L / Khriaschev, G.S. et al. | 1989
- 483
-
Electrical measurement of implantation damage profiles in InPHäussler, W. / Biersack, J.P. et al. | 1989
- 487
-
Formation of buried high-resistivity layers in InP crystals by MeV nitrogen ion implantationXiong, Fulin / Tombrello, T.A. / Chen, T.R. / Wang, H. / Zhuang, Y.H. / Yariv, A. et al. | 1989
- 492
-
Transition and rare earth elements used as luminescent probes in studying ion-implanted III–V and II–VI semiconductorsGippius, A.A. / Ushakov, V.V. / Yakimkin, V.N. / Vavilov, V.S. et al. | 1989
- 496
-
Reactive ion etching of gallium arsenideAvtiushkov, A.P. / Labunov, V.A. / Stekolnikov, A.F. et al. | 1989
- 500
-
Via-hole filling by simultaneous deposition and ion etchingMogami, T. / Okabayashi, H. / Tanikawa, A. / Nagasawa, E. et al. | 1989
- 504
-
Focused ion beam processingNamba, Susumu et al. | 1989
- 511
-
Focused phosphorus ion beam implantation into siliconMadokoro, Y. / Shukuri, S. / Umemura, K. / Tamura, M. et al. | 1989
- 515
-
Ion species and energy control of finely focused FIBs for maskless in situ microfabrication processesMiyauchi, Eizo / Arimoto, Hiroshi / Kitada, Hideki et al. | 1989
- 521
-
Wear mechanisms in ferrous alloysGoode, Philip D et al. | 1989
- 531
-
A comparison of the wear behavior of Ag, B, C, N, Pb and Sn implanted steels with 1.5% to 18% chromiumKluge, A. / Langguth, K. / Öchsner, R. / Kobs, K. / Ryssel, H. et al. | 1989
- 535
-
Wear reduction by recoil implantation of aluminium into steelChapman, G.E. / King, B.V. / MacDonald, R.J. / Pollock, J.T.A. et al. | 1989
- 540
-
Oxidativ wear in boron-implanted FeHirano, Motohisa / Miyake, Shojiro et al. | 1989
- 544
-
Friction reduction by ion-beam-induced vacuum carburization of steel materialsBraun, M. et al. | 1989
- 548
-
Effects of implantation temperature on the hardness of iron nitrides formed with high nitrogen doseFujihana, Takanobu / Okabe, Yoshio / Iwaki, Masaya et al. | 1989
- 552
-
Protection against hydrogen embrittlement by ion beam mixingEnsinger, W. / Wolf, G.K. et al. | 1989
- 556
-
Corrosion inhibition by ion beam induced vacuum carburization of tool steelBraun, M. et al. | 1989
- 559
-
Electrochemical studies of magnesium implanted with high doses of light ionsLeitão, E. / Barbosa, M. / Da Silva, M.F. / Soares, J.C. / Müller, J.P. et al. | 1989
- 563
-
A microstructural investigation of 52100 steel by N+ implantation and recoil implantationYe Weiyi / Lu Guangyuan / Su Yawen / Li Huijun / Liu Furun / Lu Kemin / Zhao Jie / Zhan Zhenzong / Li Wang et al. | 1989
- 567
-
Martensitic transformations in 304 stainless steel after implantation with helium, hydrogen and deuteriumJohnson, E. / Gråbæk, L. / Johansen, A. / Sarholt-Kristensen, L. / Børgesen, P. / Scherzer, B.M.U. / Hayashi, N. / Sakamoto, I. et al. | 1989
- 573
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Depth distribution analysis of martensitic transformations in Xe implanted austenitic stainless steelJohnson, E. / Gerritsen, E. / Chechenin, N.G. / Johansen, A. / Sarholt-Kristensen, L. / Keetels, H.A.A. / Gråbæk, L. / Bohr, J. et al. | 1989
- 578
-
Depth profile of nitrogen implanted in steelYoshihiro Hashiguchi / Takashi Ohtsubo / Kenji Sugiyama et al. | 1989
- 583
-
Formation of noble-metal nitrides by nitrogen implantationZhou, X. / Li, H-D. / Liu, B.X. et al. | 1989
- 587
-
Effect of He+ and B+ ion irradiation of amorphous alloy Fe100 − x BxHayashi, Nobuyuki / Sakamoto, Isao / Kobayashi, Hisao et al. | 1989
- 591
-
Effects of preparative ion implantation for application in plasma source nitriding of metalsNunogaki, M. / Suezawa, H. / Kuratomi, Y. / Miyazaki, K. et al. | 1989
- 595
-
Experimental and theoretical study of nickel implanted with 80 eV helium-ionsD'olieslaeger, M. / Knuyt, G. / De Schepper, L. / Stals, L.M. et al. | 1989
- 599
-
Study of modification processes in sputtering during oxygen exposureSaidoh, Masahiro / Yamada, Reiji et al. | 1989
- 603
-
Modification of solid surface by intense pulsed light-ion and metal-ion beamsNakagawa, Y. / Ariyoshi, T. / Hanjo, H. / Tsutsumi, S. / Fujii, Y. / Itami, M. / Okamoto, A. / Ogawa, S. / Hamada, T. / Fukumaru, F. et al. | 1989
- 607
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Irradiation effect on thermal stability of an amorphous FeMo alloyShang, C.H. / Li, J. / Li, H-D. / Liu, B.X. et al. | 1989
- 611
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Implanted layer formation in 3d-transition metal films: In situ electrical resistivity measurementsGondō, Yasuo / Suezawa, Yoshitaka / Nobuhara, Ichiro / Kogure, Hideo / Sun, Shu-Zi et al. | 1989
- 614
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Depth selective microstructural analysis of ion implanted metals by cross-section transmission electron microscopy and computer simulationGerritsen, E. / Keetels, H.A.A. / Ligthart, H.J. et al. | 1989
- 619
-
Formation of rutile TiO2 induced by high-dose O+ -implantation and its characteristicsOkabe, Yoshio / Iwaki, Masaya / Takahashi, Katsuo / Ohira, Shigeo / Crist, B.V. et al. | 1989
- 623
-
Electronic structure of superconducting MoN thin films produced by ion implantationSaito, K. / Yabe, K. / Nishimura, O. et al. | 1989
- 628
-
Ion beam modification and analysis of single crystalline YBa2Cu3O7 thin filmsMeyer, O. / Egner, B. / Xiong, G.C. / Xi, X.X. / Linker, G. / Geerk, J. et al. | 1989
- 635
-
High-Tc superconductor characteristics control by ion implantationMatsui, S. / Matsutera, H. / Yoshitake, T. / Fujita, J. / Satoh, T. et al. | 1989
- 640
-
Formation of high Tc, superconducting films by laser induced fragmentsEryu, Osamu / Murakami, Kouichi / Takita, Kôki / Masuda, Kohzoh et al. | 1989
- 644
-
As-grown epitaxial YBaCuO films prepared by low energy oxygen ion assisting ion beam sputteringFujita, Jun-ichi / Yositake, Tsutomu / Kamijyo, Atsushi / Satoh, Tetsuro / Igarashi, Hitoshi et al. | 1989
- 648
-
Preparation of thin superconducting YBaCu oxide films by ion beam mixingRauschenbach, B. / Hohmuth, K. et al. | 1989
- 652
-
Formation of metastable niobium oxide by the vapor quenching of sputtered particlesObara, Kozo / Saito, Shun-ichi / Ogushi, Tetsuya et al. | 1989
- 657
-
Modification of the mechanical properties of ceramics by ion implantationHioki, Tatsumi / Itoh, Akio / Noda, Shoji / Doi, Haruo / Kawamoto, Jun-ichi / Kamigaito, Osami et al. | 1989
- 665
-
Plastic flow of vitreous silica and Pyrex during bombardment with fast heavy ionsKlaumünzer, S. / Changlin, Li / Löffler, S. / Rammensee, M. / Schumacher, G. et al. | 1989
- 670
-
Structural investigation of Al2O3 formed by ion implantation at various dosesPawar, P.S. / Kothari, D.C. / Narsale, A.M. / Raole, P.M. / Gogawale, S.V. / Guzman, L. / Girardi, S. / Dapor, M. / Anderle, M. / Canteri, R. et al. | 1989
- 675
-
Structure and magnetic properties of Fe-implanted sapphireOhkubo, M. / Hioki, T. / Suzuki, N. / Ishiguro, T. / Kawamoto, J. et al. | 1989
- 680
-
MeV ion beam-enhanced adhesion of Au films on alumina substrates of various roughnessDaudin, B. / Martin, P. et al. | 1989
- 684
-
Ion-mixed Zr/ceramics interfaces — XPS studyNoda, Shoji / Dohmae, Kazuhiko / Doi, Haruo / Kamigaito, Osami et al. | 1989
- 689
-
Crystallinity and strength of diamond bombarded with low energy ion beamsMiyamoto, Iwao / Nishimura, Kazuhito / Kawata, Kozo / Kawarada, Hiroshi / Shimada, Shoichi et al. | 1989
- 692
-
Investigation on diamondlike carbon films: Structure, properties and doping effectCheng Shichang / Fu Dejun / Xu Zhisan / Zhang Hui / Pan Xianzheng et al. | 1989
- 696
-
Sharpening diamond tools having an apex angle of less than 60° with a low energy ion beamMiyamoto, Iwao / Davies, Sam T. / Kawata, Kozo et al. | 1989
- 700
-
Improvement of wear properties of glassy carbon surface layer modified by ion implantationsIwaki, Masaya / Takahashi, Katsuo / Yoshida, Kazuo / Okabe, Yoshio et al. | 1989
- 704
-
Ion-implanted graphitic carbonsKenny, M.J. / Pollock, J.T.A. / Wielunski, L.S. et al. | 1989
- 708
-
Light element redistribution and property changes in insulators due to ion bombardment and chemical processingArnold, George W. et al. | 1989
- 716
-
Effects of different ion-implanted dopant species on the solid-phase epitaxy of LiNbO3 optical waveguidesPoker, D.B. / Thomas, D.K. et al. | 1989
- 720
-
Transition from localized defects to continuous latent tracks in magnetic insulators irradiated by high energy heavy ions: A HREM investigationHoupert, Ch. / Studer, F. / Groult, D. / Toulemonde, M. et al. | 1989
- 724
-
Damage profiles in alkali halides irradiated with high-energy heavy ionsKikuchi, A. / Naramoto, H. / Ozawa, K. / Kazumata, Y. et al. | 1989
- 728
-
Ion implantation in single-crystal magnetic ferriteTakai, M. / Ryssel, H. / Lu, Y.F. / Minamisono, T. / Namba, S. et al. | 1989
- 732
-
Modification of ZnO crystal orientation in dual ion beam sputtering depositionSuzuki, Yoshihiko / Yotsuya, Tsutom / Yoshitake, Masaaki / Takiguchi, Katsumi / Ogawa, Soichi et al. | 1989
- 736
-
Ion resist properties of thin films of transition metal oxidesKoshida, N. / Ichinose, Y. / Ohtaka, K. et al. | 1989
- 739
-
Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resistAsano, Tanemasa / Ishiwara, Hiroshi / Furukawa, Seijiro et al. | 1989
- 742
-
Optical properties of ion implanted AINxDai, Yisheng / Iwaki, Masaya / Takahashi, Katsuo / Fujihana, Takanobu / Kobayashi, Kenzo / Namba, Susumu et al. | 1989
- 746
-
Nitrogen ion implantation into ZrN thin filmsKobayashi, N. / Tanoue, H. et al. | 1989
- 750
-
In situ patterning of Si3N4 by an ion-beam-induced gas surface reactionXu, Zheng / Gamo, Kenji / Shiokawa, Takao / Namba, Susumu et al. | 1989
- 754
-
Relation between structure and electronic properties of ion irradiated polymersDavenas, J. / Xu, X.L. / Boiteux, G. / Sage, D. et al. | 1989
- 764
-
Interface tailoring for adhesion using ion beamsBaglin, J.E.E. et al. | 1989
- 769
-
UV absorption and sol-gel transition in ion-bombarded polystyreneLicciardello, Antonino / Puglisi, Orazio / Calcagno, Lucia / Foti, Gaetano et al. | 1989
- 773
-
Reflection electron energy loss spectroscopy (REELS) of conductive polymers obtained by keV bombardmentMarletta, Giovanni / Pignataro, Salvatore / Oliveri, Carmelo et al. | 1989
- 778
-
Ion beam modification of polyacetylene filmsLin, Senhao / Sheng, Kanglong / Bao, Jinrong / Rong, Tingwen / Zhou, Zhiyi / Zhang, Lanping / Zhu, Dezhang / Shen, Zhiquan / Yan, Mujie et al. | 1989
- 783
-
Characterization of oxygen-implanted polyethylene by various analytical techniquesIshitani, A. / Shoda, K. / Ishida, H. / Watanabe, T. / Yoshida, K. / Iwaki, M. et al. | 1989
- 787
-
XPS study of ion beam irradiation effects in polyimide layersKarpuzov, D. / Kostov, K.L. / Venkova, E. / Kirova, P. / Katardjiev, I. / Carter, G. et al. | 1989
- 792
-
Correlation between the modification of the chemical structure and the electrical properties of Ar-ion bombarded polyimideMarletta, Giovanni / Pignataro, Salvatore / Oliveri, Carmelo et al. | 1989
- 796
-
Speculations on a mechanism for the ion beam induced degradation of polyimideDavenas, J. / Boiteux, G. / Fallavier, M. et al. | 1989
- 800
-
Anomalous depth profiles of light ions and noble gases implanted into polymersGuimarães, R.B. / Amaral, L. / Behar, M. / Zawislak, F.C. / Fink, D. et al. | 1989
- 805
-
Ar, O2 and CF4 plasma treatment of poly-(vinylidene fluoride), polyimide and polyamidoimide and its relationship to wettabilityMomose, Yoshihiro / Noguchi, Masahiro / Okazaki, Susumu et al. | 1989
- 809
-
Ion implantation change in the chemical structure of a resistFujimura, Shuzo / Yano, Hiroshi / Konno, Jun'ichi et al. | 1989
- 813
-
A noncharging direct-write electron beam process for a trilayer resist by ion shower technologyHashimoto, Kazuhiko / Koizumi, Taichi / Sakashita, Toshihiko / Kawakita, Kenji / Nomura, Noboru et al. | 1989
- 817
-
Author index| 1989
- IFC
-
Editorial Board| 1989
- vii
-
EditorialNamba, Susumu / Itoh, Noriaki / Iwaki, Masaya et al. | 1989