Optical studies on a coherent InGaN/GaN layer (English)
- New search for: Correia, M.R.
- New search for: Pereira, S.
- New search for: Alves, E.
- New search for: Arnaudov, B.
- New search for: Correia, M.R.
- New search for: Pereira, S.
- New search for: Alves, E.
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In:
Superlattices and Microstructures
;
40
, 4-6
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452-457
;
2006
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Optical studies on a coherent InGaN/GaN layer
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Contributors:
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Published in:Superlattices and Microstructures ; 40, 4-6 ; 452-457
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Publisher:
- New search for: Elsevier Ltd
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Publication date:2006-09-07
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Size:6 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 40, Issue 4-6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 191
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PrefaceFreitas, J. / Gil, B. / Monemar, B. / Mueller, G. / Rupp, R. et al. | 2006
- 195
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Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspectiveMüller, St.G. / Brady, M.F. / Burk, A.A. / Hobgood, H.McD. / Jenny, J.R. / Leonard, R.T. / Malta, D.P. / Powell, A.R. / Sumakeris, J.J. / Tsvetkov, V.F. et al. | 2006
- 201
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Improvement of cubic silicon carbide crystals grown from solutionEid, J. / Santailler, J.L. / Ferrand, B. / Basset, A. / Passero, A. / Lewandowska, R. / Balloud, C. / Camassel, J. et al. | 2006
- 205
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Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactorHemmingsson, C. / Paskov, P.P. / Pozina, G. / Heuken, M. / Schineller, B. / Monemar, B. et al. | 2006
- 214
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High-quality InAlN/GaN heterostructures grown by metal–organic vapor phase epitaxyHiroki, M. / Yokoyama, H. / Watanabe, N. / Kobayashi, T. et al. | 2006
- 219
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Integration of GaN thin films to SiO2–Si(100) substrates by laser lift-off and wafer fusion methodArokiaraj, J. / Soh, C.B. / Wang, X.C. / Tripathy, S. / Chua, S.J. et al. | 2006
- 225
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Epitaxial growth of 4H–SiC{0001} and reduction of deep levelsKimoto, T. / Wada, K. / Danno, K. et al. | 2006
- 233
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MOVPE growth study of BxGa(1−x)N on GaN template substrateGautier, S. / Sartel, C. / Ould Saad Hamady, S. / Maloufi, N. / Martin, J. / Jomard, F. / Ougazzaden, A. et al. | 2006
- 239
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Plasma-assisted molecular beam epitaxy of wurtzite GaMnN displaying ferromagnetism assessed by means of X-ray magnetic circular dichroismSarigiannidou, E. / Monroy, E. / Bellet-Amalric, E. / Mariette, H. / Galera, R.M. / Cibert, J. / Wilhelm, F. / Rogalev, A. et al. | 2006
- 246
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Structural properties of 10 μm thick InN grown on sapphire (0001)Dimakis, E. / Domagala, J.Z. / Delimitis, A. / Komninou, Ph. / Adikimenakis, A. / Iliopoulos, E. / Georgakilas, A. et al. | 2006
- 253
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Optical properties of nonpolar Formula Not Shown -plane GaN layersPaskov, P. P. / Paskova, T. / Monemar, B. / Figge, S. / Hommel, D. / Haskell, B. A. / Fini, P. T. / Speck, J. S. / Nakamura, S. et al. | 2006
- 253
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Optical properties of nonpolar -plane GaN layersPaskov, P.P. / Paskova, T. / Monemar, B. / Figge, S. / Hommel, D. / Haskell, B.A. / Fini, P.T. / Speck, J.S. / Nakamura, S. et al. | 2006
- 262
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GaN/AlN quantum dot photodetectors at 1.3–1.5 μmDoyennette, L. / Vardi, A. / Guillot, F. / Nevou, L. / Tchernycheva, M. / Lupu, A. / Colombelli, R. / Bahir, G. / Monroy, E. / Julien, F.H. et al. | 2006
- 268
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DLTS study of n-type GaN grown by MOCVD on GaN substratesTokuda, Y. / Matsuoka, Y. / Ueda, H. / Ishiguro, O. / Soejima, N. / Kachi, T. et al. | 2006
- 274
-
Time- and frequency-domain measurements of carrier lifetimes in GaN epilayersTamulaitis, G. / Mickevičius, J. / Vitta, P. / Žukauskas, A. / Shur, M.S. / Fareed, Q. / Gaska, R. et al. | 2006
- 279
-
Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methodsWeyher, J.L. et al. | 2006
- 289
-
Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxyLebedev, V. / Morales, F.M. / Cimalla, V. / Lozano, J.G. / González, D. / Himmerlich, M. / Krischok, S. / Schaefer, J.A. / Ambacher, O. et al. | 2006
- 295
-
AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxyJoblot, S. / Cordier, Y. / Semond, F. / Chenot, S. / Vennéguès, P. / Tottereau, O. / Lorenzini, P. / Massies, J. et al. | 2006
- 300
-
The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layerGloux, F. / Ruterana, P. / Wojtowicz, T. / Lorenz, K. / Alves, E. et al. | 2006
- 306
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Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengthsGuillot, F. / Amstatt, B. / Bellet-Amalric, E. / Monroy, E. / Nevou, L. / Doyennette, L. / Julien, F.H. / Dang, Le Si et al. | 2006
- 313
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Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaNIliopoulos, E. / Zervos, M. / Adikimenakis, A. / Tsagaraki, K. / Georgakilas, A. et al. | 2006
- 320
-
Defect reduction in sublimation grown SiC bulk crystalsSchmitt, Erwin / Straubinger, Thomas / Rasp, Michael / Weber, Arnd-Dietrich et al. | 2006
- 328
-
Titanium related luminescence in SiCHenry, A. / Janzén, E. et al. | 2006
- 332
-
Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on Formula Not Shown -SiC substratesNishikawa, A. / Kumakura, K. / Akasaka, T. / Makimoto, T. et al. | 2006
- 332
-
Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on -SiC substratesNishikawa, Atsushi / Kumakura, Kazuhide / Akasaka, Tetsuya / Makimoto, Toshiki et al. | 2006
- 338
-
Thermal conductivity, dislocation density and GaN device designMion, C. / Muth, J.F. / Preble, Edward A. / Hanser, Drew et al. | 2006
- 343
-
Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopyAlvarez, J. / Houzé, F. / Kleider, J.P. / Liao, M.Y. / Koide, Y. et al. | 2006
- 350
-
New results on diffusion lengths measurements in wide bandgap semiconductors, obtained from steady state photocarrier gratings (SSPG)Niehus, M. / Schwarz, R. et al. | 2006
- 359
-
Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiCCordier, Y. / Chenot, S. / Laügt, M. / Tottereau, O. / Joblot, S. / Semond, F. / Massies, J. / Di Cioccio, L. / Moriceau, H. et al. | 2006
- 363
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Technology aspects of GaN-based diodes for high-field operationMutamba, Kabula / Yilmazoglu, Oktay / Sydlo, Cezary / Mir, Mostafa / Hubbard, Seth / Zhao, G. / Daumiller, Ingo / Pavlidis, Dimitris et al. | 2006
- 369
-
Wavelength dispersive X-ray analysis and cathodoluminescence techniques for monitoring the chemical removal of AlInN on an N-face GaN surfaceRizzi, F. / Edwards, P.R. / Watson, I.M. / Martin, R.W. et al. | 2006
- 373
-
Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si(111)Roccaforte, F. / Iucolano, F. / Alberti, A. / Giannazzo, F. / Puglisi, V. / Bongiorno, C. / Di Franco, S. / Raineri, V. et al. | 2006
- 380
-
Commercial SiC device processing: Status and requirements with respect to SiC based power devicesTreu, M. / Rupp, R. / Blaschitz, P. / Hilsenbeck, J. et al. | 2006
- 388
-
Deep SiC etching with RIELazar, M. / Vang, H. / Brosselard, P. / Raynaud, C. / Cremillieu, P. / Leclercq, J.-L. / Descamps, A. / Scharnholz, S. / Planson, D. et al. | 2006
- 393
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Resonant photoemission at the oxygen K edge as a tool to study the electronic properties of defects at SiO2 /Si and SiO2 /SiC interfacesTallarida, Massimo / Sohal, Rakesh / Schmeisser, Dieter et al. | 2006
- 399
-
Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodesBluet, J.M. / Ziane, D. / Guillot, G. / Tournier, D. / Brosselard, P. / Montserrat, J. / Godignon, P. et al. | 2006
- 405
-
High-temperature failure of GaN LEDs related with passivationMeneghini, Matteo / Trevisanello, Lorenzo / Meneghesso, Gaudenzio / Zanoni, Enrico / Rossi, Francesca / Pavesi, Maura / Zehnder, Ulrich / Strauss, Uwe et al. | 2006
- 412
-
New developments for nitride unipolar devices at 1.3–1.5 μm wavelengthsNevou, L. / Tchernycheva, M. / Doyennette, L. / Julien, F.H. / Warde, E. / Colombelli, R. / Guillot, F. / Leconte, S. / Monroy, E. / Remmele, T. et al. | 2006
- 418
-
MBE growth of nitride-based photovoltaic intersubband detectorsMonroy, E. / Guillot, F. / Leconte, S. / Bellet-Amalric, E. / Baumann, E. / Giorgetta, F. / Hofstetter, D. / Nevou, L. / Tchernycheva, M. / Doyennette, L. et al. | 2006
- 426
-
GaN micromachined FBAR structures for microwave applicationsMüller, A. / Neculoiu, D. / Vasilache, D. / Dascalu, D. / Konstantinidis, G. / Kosopoulos, A. / Adikimenakis, A. / Georgakilas, A. / Mutamba, K. / Sydlo, C. et al. | 2006
- 432
-
Study of the structural and optical properties of GaN/AlN quantum dot superlatticesSkoulidis, N. / Vargiamidis, V. / Polatoglou, H.M. et al. | 2006
- 440
-
UV-Raman scattering study of lattice recovery by thermal annealing of Eu+ -implanted GaN layersPastor, D. / Hernández, S. / Cuscó, R. / Artús, L. / Martin, R.W. / O’Donnell, K.P. / Briot, O. / Lorenz, K. / Alves, E. et al. | 2006
- 445
-
Blue cathodoluminescence from thulium implanted AlxGa1−xN and InxAl1−xNRoqan, I.S. / Lorenz, K. / O’Donnell, K.P. / Trager-Cowan, C. / Martin, R.W. / Watson, I.M. / Alves, E. et al. | 2006
- 452
-
Optical studies on a coherent InGaN/GaN layerCorreia, M.R. / Pereira, S. / Alves, E. / Arnaudov, B. et al. | 2006
- 458
-
Energetics of the 30∘ Shockley partial dislocation in wurtzite GaNBelabbas, I. / Dimitrakopulos, G. / Kioseoglou, J. / Béré, A. / Chen, J. / Komninou, Ph. / Ruterana, P. / Nouet, G. et al. | 2006
- 464
-
Stillinger–Weber parameters for In and N atomsLei, H.P. / Chen, J. / Petit, S. / Ruterana, P. / Jiang, X.Y. / Nouet, G. et al. | 2006
- 470
-
Nitride-based ultraviolet Schottky barrier photodetectors with LT-AlN cap layersYu, C.L. / Chang, S.J. / Chang, P.C. / Lin, Y.C. / Lee, C.T. et al. | 2006
- 476
-
Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogenSartel, C. / Gautier, S. / Ould Saad Hamady, S. / Maloufi, N. / Martin, J. / Sirenko, A. / Ougazzaden, A. et al. | 2006
- 483
-
Morphological properties of AlN and GaN grown by MOVPE on porous Si(111) and Si(111) substratesChaaben, N. / Yahyaoui, J. / Christophersen, M. / Boufaden, T. / El Jani, B. et al. | 2006
- 490
-
Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growthHalidou, I. / Benzarti, Z. / Bougrioua, Z. / Boufaden, T. / El Jani, B. et al. | 2006
- 496
-
Thermodynamic analysis of Si doping in GaNHalidou, I. / Benzarti, Z. / Boufaden, T. / El Jani, B. et al. | 2006
- 501
-
The role of a ZnO buffer layer in the growth of ZnO thin film on Al2O3 substrateKang, Hong Seong / Pang, Seong Sik / Kim, Jae Won / Kim, Gun Hee / Kim, Jong Hoon / Lee, Sang Yeol / Li, Y. / Wang, H. / Jia, Q.X. et al. | 2006
- 507
-
Vertical electron transport study in GaN/AlN/GaN heterostructuresLeconte, S. / Monroy, E. / Gérard, J.-M. et al. | 2006
- 513
-
Photoluminescence, cathodoluminescence, and reflectance study of AlN layers and AlN single crystalsPrinz, G.M. / Ladenburger, A. / Feneberg, M. / Schirra, M. / Thapa, S.B. / Bickermann, M. / Epelbaum, B.M. / Scholz, F. / Thonke, K. / Sauer, R. et al. | 2006
- 519
-
Hydrogen-free CVD diamond synthesisHiraga, Shinji / Shimada, Shouhei / Takagi, Yoshiki / Kuribayashi, Kiyoshi / Hayashi, Tsuyoshi et al. | 2006
- 526
-
Diamond particles synthesized with graphite spark method in two secondsHirai, Takayuki / Kawai, Toru / Takagi, Yoshiki / Shimizu, Osamu / Suda, Yoshihisa / Kanno, Yoshinori / Kuribayashi, Kiyoshi / Hayashi, Tsuyosi et al. | 2006
- 530
-
Mn-doped GaN/AlN heterojunction for spintronic devicesDebernardi, Alberto et al. | 2006
- 533
-
Optical properties of GaN nanocrystals embedded into silica matricesPodhorodecki, A. / Nyk, M. / Kudrawiec, R. / Misiewicz, J. / Pivin, J.C. / Strek, W. et al. | 2006
- 537
-
Optical and structural studies in Eu-implanted AlN filmsPeres, M. / Cruz, A. / Soares, M.J. / Neves, A.J. / Monteiro, T. / Lorenz, K. / Alves, E. et al. | 2006
- 545
-
Surface confinement of the InN-rich phase in thick InGaN on GaNKim, Taek-Seung / Kim, Sang-Woo / Kim, Han-Ki / Lee, Ji-Myon et al. | 2006
- 551
-
Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- applicationFissel, A. / Czernohorsky, M. / Osten, H.J. et al. | 2006
- 551
-
Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- Formula Not Shown applicationFissel, A. / Czernohorsky, M. / Osten, H. J. et al. | 2006
- 557
-
Carrier diffusion processes near threading dislocations in GaN and GaN:Si characterized by low voltage cathodoluminescencePauc, N. / Phillips, M.R. / Aimez, V. / Drouin, D. et al. | 2006
- 562
-
Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMTHa, Min-Woo / Lee, Seung-Chul / Kim, Soo-Seong / Yun, Chong-Man / Han, Min-Koo et al. | 2006
- 567
-
New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructureHa, Min-Woo / Lee, Seung-Chul / Choi, Young-Hwan / Kim, Soo-Seong / Yun, Chong-Man / Han, Min-Koo et al. | 2006
- 574
-
Energetics of dopant atoms in subsurface positions of diamond semiconductorMiyazaki, Takehide / Kato, Hiromitsu / Ri, Sung-Gi / Ogura, Masahiko / Tokuda, Norio / Yamasaki, Satoshi et al. | 2006
- 580
-
A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devicesBen Salah, Tarek / Garrab, Hatem / Ghedira, Sami / Allard, Bruno / Risaletto, Damien / Raynaud, Christophe / Besbes, Kamel / Morel, Hervé et al. | 2006
- 588
-
Semiempirical tight-binding modelling of III-N-based heterostructuresGürel, H. Hakan / Akinci, Özden / Ünlü, Hilmi et al. | 2006
- 598
-
Hydrogenated amorphous silicon nitride deposited by DC magnetron sputteringMokeddem, K. / Aoucher, M. / Smail, T. et al. | 2006
- 603
-
Modeling of trap-assisted tunneling in AlGaN/GaN heterostructure field effect transistors with different Al mole fractionsAsgari, A. / Karamad, M. / Kalafi, M. et al. | 2006
- 607
-
Atomically flat GaMnN by diffusion of Mn into GaN()Dumont, J. / Kowalski, B.J. / Pietrzyk, M. / Seldrum, T. / Houssiau, L. / Douhard, B. / Grzegory, I. / Porowski, S. / Sporken, R. et al. | 2006
- 607
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Atomically flat GaMnN by diffusion of Mn into GaN( Formula Not Shown )Dumont, J. / Kowalski, B. J. / Pietrzyk, M. / Seldrum, T. / Houssiau, L. / Douhard, B. / Grzegory, I. / Porowski, S. / Sporken, R. et al. | 2006
- 612
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Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometryPezoldt, J. / Zgheib, Ch. / Lebedev, V. / Masri, P. / Ambacher, O. et al. | 2006
- 619
-
Bias sensitive spectral sensitivity in double -SiC:H pin structuresLouro, P. / Fernandes, M. / Fantoni, A. / Lavareda, G. / Nunes de Carvalho, C. / Vieira, M. et al. | 2006
- 619
-
Bias sensitive spectral sensitivity in double Formula Not Shown -SiC:H pin structuresLouro, P. / Fernandes, M. / Fantoni, A. / Lavareda, G. / Nunes de Carvalho, C. / Vieira, M. et al. | 2006
- 626
-
Ni–Al ohmic contact to p-type 4H-SiCVang, H. / Lazar, M. / Brosselard, P. / Raynaud, C. / Cremillieu, P. / Leclercq, J.-L. / Bluet, J.-M. / Scharnholz, S. / Planson, D. et al. | 2006
- 632
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Radiation source dependence of device performance degradation for 4H-SiC MESFETsOhyama, H. / Takakura, K. / Uemura, K. / Shigaki, K. / Kudou, T. / Matsumoto, T. / Arai, M. / Kuboyama, S. / Kamezawa, C. / Simoen, E. et al. | 2006
- 638
-
5 μm thick 3C-SiC layers grown on Ge-modified Si(100) substratesZgheib, Ch. / Nassar, E. / Hamad, M. / Nader, R. / Masri, P. / Pezoldt, J. / Ferro, G. et al. | 2006
- 644
-
Al Schottky contact on p-GaSeHuang, Wen-Chang / Su, Shui-Hsiang / Hsu, Yu-Kuei / Wang, Chih-Chia / Chang, Chen-Shiung et al. | 2006
- 651
-
The influence of doping element on structural and luminescent characteristics of ZnS thin filmsKryshtab, T. / Khomchenko, V.S. / Andraca-Adame, J.A. / Rodionov, V.E. / Khachatryan, V.B. / Tzyrkunov, Yu.A. et al. | 2006