Conditions of maintenance of a flat crystal/melt interface during Czochralski growth of bismuth germanium oxide single crystals (English)
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In:
Journal of Crystal Growth
;
108
, 1-2
;
225-232
;
1990
-
ISSN:
- Article (Journal) / Electronic Resource
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Title:Conditions of maintenance of a flat crystal/melt interface during Czochralski growth of bismuth germanium oxide single crystals
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Contributors:Berkowski, M. ( author ) / Iliev, K. ( author ) / Nikolov, V. ( author ) / Peshev, P. ( author ) / Piekarczyk, W. ( author )
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Published in:Journal of Crystal Growth ; 108, 1-2 ; 225-232
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Publisher:
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Publication date:1990-07-25
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Size:8 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 108, Issue 1-2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Floating-zone crystal growth with a heated ring covering the melt surfaceLan, C.W. / Kou, Sindo et al. | 1990
- 8
-
The role of transport phenomena in protein crystal growthGrant, M.L. / Saville, D.A. et al. | 1990
- 19
-
Defect site nucleation of microbubbles as a source of dynamic light scattering at the growing ice-water interfaceVesenka, J.P. / Yeh, Y. et al. | 1990
- 25
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The molecular beam epitaxial growth of GaAs on Si(100): a variable growth temperature studyWoolf, D.A. / Westwood, D.I. / Williams, R.H. et al. | 1990
- 33
-
A high temperature creep model for GaAsMotakef, Shahryar et al. | 1990
- 37
-
Crystal growth and characterization of the filled tetrahedral semiconductor LiZnPKuriyama, K. / Katoh, T. / Mineo, N. et al. | 1990
- 41
-
Removal of C/SiC from liquid silicon by directional solidificationMühlbauer, A. / Diers, V. / Walther, A. / Grabmaier, J.G. et al. | 1990
- 53
-
Complementary orientation-dependent distributions of 1.40 and 2.56 eV cathodoluminescence on vicinals on {111} in synthetic diamondsLang, A.R. / Meaden, G.M. et al. | 1990
- 63
-
Growth forms of β-rhombohedral boron whiskers and platelets prepared in a low-pressure B2H6 + He plasma in terms of periodic bond chain methodKomatsu, Shojiro / Moriyoshi, Yusuke et al. | 1990
- 73
-
Patterned substrate epitaxy surface shapesJones, S.H. / Seidel, L.K. / Lau, K.M. / Harold, M. et al. | 1990
- 89
-
Growth of gypsum II. Incorporation of cadmiumWitkamp, G.J. / van Rosmalen, G.M. et al. | 1990
- 99
-
GaxIn1−xP/GaAs grown by gas source molecular beam epitaxy using phosphineTakamori, Akira / Yokotsuka, Tatsuo / Uchiyama, Kiyoshi / Nakajima, Masato et al. | 1990
- 105
-
Design considerations for the elimination of recirculation in horizontal epitaxial reactorsChinoy, Percy B. / Ghandhi, Sorab K. et al. | 1990
- 114
-
Triggering explosive crystallization of amorphous siliconPolman, A. / Roorda, S. / Stolk, P.A. / Sinke, W.C. et al. | 1990
- 121
-
The effect of magnetic field on crystallization of γ-phase alloy in the Cu-Zn systemAoki, Y. / Hayashi, S. / Komatsu, H. et al. | 1990
- 129
-
Techniques for developing nucleation and growth kinetics from MSMPR data for sucrose crystallization in the presence of growth rate dispersionLiang, B. / Hartel, R.W. et al. | 1990
- 143
-
Hydrothermal synthesis and characterization of nitrite sodalite single crystalsBuhl, J.-Ch. et al. | 1990
- 150
-
Transport restriction effect for gaseous components on the carbon content of LEC GaAsNishio, Johji et al. | 1990
- 157
-
Surface stoichiometry variation associated with GaAs (001) reconstruction transitionsDeparis, C. / Massies, J. et al. | 1990
- 173
-
Self-consistent theory of dendritic growth with convectionAnanth, Ramagopal / Gill, William N. et al. | 1990
- 190
-
Coating of fibrous substrates by CVD; analysis of the fiber evolutionScholtz, Jan H. / Gatica, Jorge E. / Viljoen, Hendrik J. / Hlavacek, Vladimir et al. | 1990
- 203
-
CODE: a novel single step MOVPE technique for the fabrication of low-dimensional devices, quantum wires and quantum dotsMoseley, A.J. / Thompson, J. / Kightley, P. / Wallis, R.H. / Stirland, D.J. et al. | 1990
- 219
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Conditions of existence and character of the temperature fluctuations during Czochralski growth of oxide single crystalsIliev, K. / Berkowski, M. / Nikolov, V. / Peshev, P. / Piekarczyk, W. et al. | 1990
- 225
-
Conditions of maintenance of a flat crystal/melt interface during Czochralski growth of bismuth germanium oxide single crystalsBerkowski, M. / Iliev, K. / Nikolov, V. / Peshev, P. / Piekarczyk, W. et al. | 1990
- 233
-
Mathematical modelling of heat transfer in Stockbarger-type units for ZnSe growthLingart, Yu.K. / Mukhin, S.V. / Tikhonova, N.A. et al. | 1990
- 240
-
Oxygen transport under an axial magnetic field in Czochralski silicon growthKobayashi, Nobuyuki et al. | 1990
- 247
-
Interaction of thermocapillary and natural convection flows during solidification: normal and reduced gravity conditionsShyy, Wei / Chen, Ming-Hsiung et al. | 1990
- 262
-
Effects of growth conditions on thermal profiles during Czochralski silicon crystal growthChoe, Kwang Su / Stefani, Jerry A. / Dettling, Theodore B. / Tien, John K. / Wallace, John P. et al. | 1990
- 277
-
Growth of large tetrapod-like ZnO crystals II. Morphological considerations on growth mechanismKitano, Motoi / Hamabe, Takeshi / Maeda, Sachiko / Okabe, Toshio et al. | 1990
- 285
-
Habit modification of coordination compounds in the presence of additives; a study of the system Ni(β-ala)2·2H2O-glycineSkoulika, S. / Michaelides, A. / Aubry, A. et al. | 1990
- 290
-
Structural morphology of gypsum (CaSO4·2H2O), brushite (CaHPO4·2H2O) and pharmacolite (CaHAsO4·2H2O)Heijnen, W.M.M. / Hartman, P. et al. | 1990
- 301
-
Molecular beam epitaxy of Pb1-xSrxSe for the use in IR devicesLambrecht, A. / Herres, N. / Spanger, B. / Kuhn, S. / Böttner, H. / Tacke, M. / Evers, J. et al. | 1990
- 309
-
Seeded growth of rare-earth orthoferrites from B 2 O 3-BaF 2-BaO solvent I. Study of conditions and physico-chemical crystallization parametersBarilo, S.N. / Ges, A.P. / Guretskii, S.A. / Zhigunov, D.I. / Ignatenko, A.A. / Luginets, A.M. / Shapovalova, E.F. et al. | 1990
- 314
-
Seeded growth of rare-earth orthoferrites from B 2 O 3-BaF 2-BaO solvent II. Growth of high-quality RFeO 3 single crystalsBarilo, S.N. / Ges, A.P. / Guretskii, S.A. / Zhigunov, D.I. / Ignatenko, A.A. / Igumentsev, A.N. / Lomako, I.D. / Luginets, A.M. et al. | 1990
- 319
-
Reduced pressure silicon CVD on hemispherical substratesGardeniers, J.G.E. / Klein Douwel, C.H. / Giling, L.J. et al. | 1990
- 335
-
Effect of surface composition on the growth rates of silicon carbide by CVDKaneto, Tsutomu / Okuno, Takashi / Kabe, Isao et al. | 1990
- 340
-
Floating-zone crystal growth with a heated and immersed shaper - computer simulationLan, C.W. / Kou, Sindo et al. | 1990
- 351
-
Heat transfer, fluid flow and interface shapes in floating-zone crystal growthLan, C.W. / Kou, Sindo et al. | 1990
- 367
-
The effect of radiative heat transfer on morphological stability during directional solidification of a binary meltYuferev, V.S. / Chvoj, Z. / Kolesnikova, E.N. et al. | 1990
- 377
-
X-ray topographic observation of dislocation structure in sapphire single crystal grown by temperature gradient techniqueQiang, Zhang / Peizhen, Deng / Fuxi, Gan et al. | 1990
- 385
-
The effect of pyrophosphate concentrations on calcium phosphate growth on well-crystallized octacalcium phosphate and hydroxyapatite seed crystalsEidelman, N. / Brown, W.E. / Meyer, J.L. et al. | 1990
- 394
-
Growth of large, high-quality beta-barium metaborate crystalsBosenberg, W.R. / Lane, R.J. / Tang, C.L. et al. | 1991
- 399
-
On the prediction of dislocation formation in semiconductor crystals grown from the melt: analysis of the Haasen model for plastic deformation dynamicsMaroudas, Dimitris / Brown, Robert A. et al. | 1990
- 416
-
Growth steps and etch pits appearing on {100} planes of diamonds prepared by combustion-flame deposition methodOkada, Katsuyuki / Komatsu, Shojiro / Matsumoto, Seiichiro / Moriyoshi, Yusuke et al. | 1990
- 421
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Impurity distribution among vicinal slopes of growth spirals developing on the {111} faces of synthetic diamondsKanda, Hisao / Akaishi, Minoru / Yamaoka, Shinobu et al. | 1990
- 425
-
Preparation of (La 1-x Ce x)B 6 single crystals by the floating zone methodOtani, Shigeki / Tanaka, Takaho / Ishizawa, Yoshio et al. | 1990
- 429
-
Blue coloration of KNbO3 caused by scatteringVarnhorst, T. / Schirmer, O.F. / Hesse, H. et al. | 1990
- 433
-
Desorption process of Ga atoms from the mask surface in selective area growth of GaAs by electron-cyclotron-resonance plasma-excited molecular-beam epitaxy (ECR-MBE)Yamamoto, Norio / Kondo, Naoto / Nanishi, Yasushi et al. | 1990
- 436
-
IOCG news - No. 10| 1991
- 438
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News, reports and announcements| 1991
- 439
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Errata| 1991
- ii
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Editorial Board| 1991