Electronic and optical properties of wurtzite and zinc-blende TlN and AlN (English)
- New search for: Ferreira da Silva, A.
- New search for: Souza Dantas, N.
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In:
Journal of Crystal Growth
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281
, 1
;
151-160
;
2005
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Electronic and optical properties of wurtzite and zinc-blende TlN and AlN
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Contributors:Ferreira da Silva, A. ( author ) / Souza Dantas, N. ( author ) / de Almeida, J.S. ( author ) / Ahuja, R. ( author ) / Persson, C. ( author )
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Published in:Journal of Crystal Growth ; 281, 1 ; 151-160
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Publisher:
- New search for: Elsevier B.V.
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Publication date:2005-01-01
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Size:10 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 281, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Bulk Nitride WorkshopFreitas, Jaime A. / Sitar, Zlatko et al. | 2005
- 3
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Jose Roberto Leite (1942-2004)Freitas, J. A. et al. | 2005
- 3
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José Roberto Leite (1942–2004)Freitas, Jaime A. Jr. et al. | 2005
- 3
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José Roberto Leite (1942#82112004)Freitas, Jaime A. et al. | 2005
- 5
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Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradientFeigelson, B.N. / Henry, R.L. et al. | 2005
- 11
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Growth of GaN on patterned GaN/sapphire substrates by high pressure solution methodBoćkowski, M. / Grzegory, I. / Borysiuk, J. / Kamler, G. / Łucznik, B. / Wróblewski, M. / Kwiatkowski, P. / Jasik, K. / Krukowski, S. / Porowski, S. et al. | 2005
- 17
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Growth of thick GaN layers with hydride vapour phase epitaxyMonemar, B. / Larsson, H. / Hemmingsson, C. / Ivanov, I.G. / Gogova, D. et al. | 2005
- 32
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Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applicationsStorm, D.F. / Katzer, D.S. / Mittereder, J.A. / Binari, S.C. / Shanabrook, B.V. / Xu, X. / McVey, D.S. / Vaudo, R.P. / Brandes, G.R. et al. | 2005
- 38
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Deposition of thick GaN layers by HVPE on the pressure grown GaN substratesŁucznik, B. / Pastuszka, B. / Grzegory, I. / Boćkowski, M. / Kamler, G. / Litwin-Staszewska, E. / Porowski, S. et al. | 2005
- 47
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Thermodynamic analysis of AlGaN HVPE growthKoukitu, Akinori / Kikuchi, Jun / Kangawa, Yoshihiro / Kumagai, Yoshinao et al. | 2005
- 55
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Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffersPaskova, T. / Darakchieva, V. / Paskov, P.P. / Birch, J. / Valcheva, E. / Persson, P.O.A. / Arnaudov, B. / Tungasmitta, S. / Monemar, B. et al. | 2005
- 62
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Growth of thick AlN layers by hydride vapor-phase epitaxyKumagai, Yoshinao / Yamane, Takayoshi / Koukitu, Akinori et al. | 2005
- 68
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AlN bulk crystals grown on SiC seedsDalmau, R. / Schlesser, R. / Rodriguez, B.J. / Nemanich, R.J. / Sitar, Z. et al. | 2005
- 75
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Crucible materials for growth of aluminum nitride crystalsSchlesser, R. / Dalmau, R. / Zhuang, D. / Collazo, R. / Sitar, Z. et al. | 2005
- 81
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Sublimation growth of AlN crystals: Growth mode and structure evolutionYakimova, R. / Kakanakova-Georgieva, A. / Yazdi, G.R. / Gueorguiev, G.K. / Syväjärvi, M. et al. | 2005
- 87
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Thick AlN layers grown by HVPEKovalenkov, O. / Soukhoveev, V. / Ivantsov, V. / Usikov, A. / Dmitriev, V. et al. | 2005
- 93
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Sublimation growth of AlN bulk crystals in Ta cruciblesMokhov, E.N. / Avdeev, O.V. / Barash, I.S. / Chemekova, T.Yu. / Roenkov, A.D. / Segal, A.S. / Wolfson, A.A. / Makarov, Yu.N. / Ramm, M.G. / Helava, H. et al. | 2005
- 101
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Optoelectronic devices on bulk GaNFigge, S. / Böttcher, T. / Dennemarck, J. / Kröger, R. / Paskova, T. / Monemar, B. / Hommel, D. et al. | 2005
- 107
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Properties of InGaN blue laser diodes grown on bulk GaN substratesPerlin, P. / Suski, T. / Leszczyński, M. / Prystawko, P. / Świetlik, T. / Marona, Ł. / Wiśniewski, P. / Czernecki, R. / Nowak, G. / Weyher, J.L. et al. | 2005
- 115
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Bandgap engineering of electronic and optoelectronic devices on native AlN and GaN substrates: A modelling insightMymrin, V.F. / Bulashevich, K.A. / Podolskaya, N.I. / Karpov, S.Yu. et al. | 2005
- 125
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Defects in p-doped bulk GaN crystals grown with Ga polarityLiliental-Weber, Z. / Tomaszewicz, T. / Zakharov, D. / O’Keefe, M.A. et al. | 2005
- 135
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Defects in GaN single crystals and homoepitaxial structuresWeyher, J.L. / Kamler, G. / Nowak, G. / Borysiuk, J. / Lucznik, B. / Krysko, M. / Grzegory, I. / Porowski, S. et al. | 2005
- 143
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Identification of donors, acceptors, and traps in bulk-like HVPE GaNLook, D.C. / Fang, Z.-Q. / Claflin, B. et al. | 2005
- 151
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Electronic and optical properties of wurtzite and zinc-blende TlN and AlNFerreira da Silva, A. / Souza Dantas, N. / de Almeida, J.S. / Ahuja, R. / Persson, C. et al. | 2005
- 161
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Rate of radiative and nonradiative recombination in bulk GaN grown by various techniquesJuršėnas, S. / Miasojedovas, S. / Z˘ukauskas, A. et al. | 2005
- 168
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Optical studies of bulk and homoepitaxial films of III#8211V nitride semiconductorsFreitas, Jaime A. et al. | 2005
- 168
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Optical studies of bulk and homoepitaxial films of III–V nitride semiconductorsFreitas, Jaime A. Jr et al. | 2005
- 183
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Spontaneous and stimulated emission in quantum structures grown over bulk GaN and sapphireMiasojedovas, S. / Juršėnas, S. / Žukauskas, A. / Ivanov, V.Yu. / Godlewski, M. / Leszczyński, M. / Perlin, P. / Suski, T. et al. | 2005
- 188
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Depth-resolved cathodoluminescence of a homoepitaxial AlN thin filmSilveira, E. / Freitas, J.A. / Slack, G.A. / Schowalter, L.J. / Kneissl, M. / Treat, D.W. / Johnson, N.M. et al. | 2005
- 194
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Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructuresKnap, W. / Skierbiszewski, C. / Dybko, K. / Łusakowski, J. / Siekacz, M. / Grzegory, I. / Porowski, S. et al. | 2005
- ii
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Editorial Board| 2005
- vii
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Contents Bulk Nitride Workshop| 2005