Preparation and properties of superconducting Bi–Sr–Ca–Cu–O thin films on polycristalline silver substrates by organometallic chemical vapor deposition (English)
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In:
Journal of Crystal Growth
;
107
, 1-4
;
705-709
;
1991
-
ISSN:
- Article (Journal) / Electronic Resource
-
Title:Preparation and properties of superconducting Bi–Sr–Ca–Cu–O thin films on polycristalline silver substrates by organometallic chemical vapor deposition
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Contributors:Zhang, J.M. ( author ) / Wessels, B.W. ( author ) / Richeson, D.S. ( author ) / Marks, T.J. ( author )
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Published in:Journal of Crystal Growth ; 107, 1-4 ; 705-709
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Publisher:
-
Publication date:1991-01-01
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Size:5 pages
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ISSN:
-
DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 107, Issue 1-4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Detailed models of the MOVPE processJensen, Klavs F. / Fotiadis, Dimitrios I. / Mountziaris, Triantafillos J. et al. | 1991
- 13
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Gas phase studies of MOVPE by optical methodsRichter, W. / Kurpas, P. / Lückerath, R. / Motzkus, M. / Waschbüsch, M. et al. | 1991
- 26
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Thermal decomposition studies of group V hydridesAbraham, P. / Bekkaoui, A. / Souliére, V. / Bouix, J. / Monteil, Y. et al. | 1991
- 32
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Comparative pyrolysis studies of ethylarsinesLi, S.H. / Larsen, C.A. / Stringfellow, G.B. et al. | 1991
- 37
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Surface science studies of MOVPE processes: a review of progressPemble, Martyn E. / Buhaenko, David S. / Francis, Steven M. / Goulding, Peter A. / Allen, John T. et al. | 1991
- 47
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In situ monitoring of crystal growth by reflectance difference spectroscopyColas, E. / Aspnes, D.E. / Bhat, R. / Studna, A.A. / Harbison, J.P. / Florez, L.T. / Koza, M.A. / Keramidas, V.G. et al. | 1991
- 56
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Surface processes during growth of GaAs by MOCVDGiling, L.J. / de Croon, M.H.J.M. et al. | 1991
- 62
-
In-situ monitoring of GaAs growth process in MOVPE by surface photo-absorption methodKobayashi, N. / Makimoto, T. / Yamauchi, Y. / Horikoshi, Y. et al. | 1991
- 68
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Reflectance-difference study of surface chemistry in MOVPE growthSamuelson, L. / Deppert, K. / Jeppesen, S. / Jönsson, J. / Paulsson, G. / Schmidt, P. et al. | 1991
- 73
-
Atmospheric pressure atomic layer epitaxy: mechanisms and applicationsDaniel Dapkus, P. / Maa, B.Y. / Chen, Q. / Jeong, W.G. / DenBaars, S.P. et al. | 1991
- 83
-
Atomic layer epitaxy of AlxGa1−xAs and device quality GaAsGong, J.R. / Colter, P.C. / Jung, D. / Hussien, S.A. / Parker, C.A. / Dip, A. / Hyuga, F. / Duncan, W.M. / Bedair, S.M. et al. | 1991
- 89
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High carbon doping of AlxGa1−xAs (O ≤x ≤ 1) by atomic layer epitaxy for device applicationsChung, B.-C. / Green, R.T. / MacMillan, H.F. et al. | 1991
- 96
-
Ordered GaInP by atomic layer epitaxyMcDermott, B.T. / El-Masry, N.A. / Jiang, B.L. / Hyuga, F. / Bedair, S.M. / Duncan, W.M. et al. | 1991
- 102
-
Pulsed jet epitaxy of III–V compoundsOzeki, M. / Ohtsuka, N. / Sakuma, Y. / Kodama, K. et al. | 1991
- 111
-
GaAs epitaxy using alternate pulses in a standard LP-MOVPE reactorWisser, J. / Czuprin, P. / Grundmann, D. / Balk, P. / Waschbüsch, M. / Lückerath, R. / Richter, W. et al. | 1991
- 116
-
Selective epitaxy of GaAs, AlxGa1−xAs, and InxGa1−xAsKuech, T.F. / Goorsky, M.S. / Tischler, M.A. / Palevski, A. / Solomon, P. / Potemski, R. / Tsai, C.S. / Lebens, J.A. / Vahala, K.J. et al. | 1991
- 129
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Selective area epitaxy of GaAs on Si using atomic layer epitaxy by LP-MOVPEKaram, N.H. / Haven, V. / Vernon, S.M. / El-Masry, N. / Lingunis, E.H. / Haegel, N. et al. | 1991
- 136
-
Patterned crystal growth of GaAs using laser scanning with atomic layer epitaxyIwai, S. / Meguro, T. / Aoyagi, Y. / Miyoshi, T. et al. | 1991
- 141
-
Selective embedded growth of GaInAs by low pressure MOVPEKayser, O. / Opitz, B. / Westphalen, R. / Niggebrügge, U. / Schneider, K. / Balk, P. et al. | 1991
- 147
-
Selective area MOVPE of GaInAs/InP heterostructures on masked and nonplanar (100) and {111} substratesGaleuchet, Y.D. / Roentgen, P. et al. | 1991
- 151
-
Composition of selectively grown InxGa1−xAs structures from locally resolved Raman spectroscopyFinders, J. / Geurts, J. / Kohl, A. / Weyers, M. / Opitz, B. / Kayser, O. / Balk, P. et al. | 1991
- 156
-
Selective MOVPE of semi-insulating InP layers for high speed OEICsLaube, G. / Nowitzki, A. / Dütting, K. / Speier, P. et al. | 1991
- 161
-
Non-planar MOVPE growth using a novel shadow-masking techniqueDemester, P. / Buydens, L. / Moerman, I. / Lootens, D. / Van Daele, P. et al. | 1991
- 166
-
Layer uniformity in a multiwafer MOVPE reactor for III–V compoundsFrijlink, P.M. / Nicolas, J.L. / Suchet, P. et al. | 1991
- 175
-
Influence of gas mixing on the lateral uniformity in horizontal MOVPE reactorsMoerman, I. / Coudenys, G. / Demeester, P. / Turner, B. / Crawley, J. et al. | 1991
- 181
-
Influence of gas mixing and expansion in horizontal MOVPE reactorsMason, N.J. / Walker, P.J. et al. | 1991
- 188
-
Growth of extremely uniform III–V compound semiconductor layers by LP-MOVPE by application of the gas foil technique for substrate rotationSchmitz, D. / Strauch, G. / Jürgensen, H. / Heyen, M. et al. | 1991
- 192
-
Uniformity — optical properties of GaInP-GaAlInP layers grown by MOVPEMpaskoutas, M. / Morhaïm, C. / Patillon, J.N. / André, J.P. / Valster, A. / Rusch, J.J. et al. | 1991
- 198
-
MOVPE growth of II–VI compounds in a vertical reactor with high-speed horizontal rotating diskTompa, G.S. / Salagaj, T. / Cook, L. / Stall, R.A. / Nelson, C.R. / Anderson, P.L. / Wright, W.H. / Ahlgren, W.L. / Johnson, S.M. et al. | 1991
- 203
-
Etching of InP by HCl in an OMVPE reactorCaneau, C. / Bhat, R. / Koza, M. / Hayes, J.R. / Esagui, R. et al. | 1991
- 209
-
Plasma MOVPE of ternary and quaternary layersBehet, M. / Brauers, A. / Balk, P. et al. | 1991
- 215
-
The influence of growth conditions on the planarity of MOVPE grown GaInAs(P) interfacesSpurdens, P.C. / Taylor, M.R. / Hockly, M. / Yates, M.J. et al. | 1991
- 221
-
Effect of wafer cleavage on composition of InGaAsP grown on InP by low pressure MOCVDKnight, D.G. / Miner, C.J. / Watt, B. et al. | 1991
- 226
-
Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: application to thickness-modulated waveguide structuresColas, E. / Shahar, A. / Soole, B.D. / Tomlinson, W.J. / Hayes, J.R. / Caneau, C. / Bhat, R. et al. | 1991
- 231
-
Step-flow growth and fractional-layer superlattices on ()B GaAs vicinal surfacesFukui, Takashi / Saito, Hisao et al. | 1991
- 237
-
Strong enhancement of band edge PL intensity and improved morphology for AlGaAs grown on lenticular GaAs substrates by low pressure MOVPEJohnson, Eric S. et al. | 1991
- 243
-
Direct evidence of lateral bandgap patterning on stepped structures grown on non-planar, vicinal GaAs surfaces by cathodoluminescence investigationsColas, E. / Clausen, E.M. Jr. / Kapon, E. / Hwang, D.M. / Simhony, S. / Bhat, R. / Chen, C.Y. / Lin, P.S.D. / Schiavone, L. / Van der Gaag, B. et al. | 1991
- 248
-
Infrared spectroscopic determination of substitutional carbon in MOVPE grown films of GaAsAnnapragada, Ananth V. / Jensen, Klavs F. / Kuech, Thomas F. et al. | 1991
- 254
-
Doping level anomalies resulting from exposure to dopant precursors during cooling in MOVPECole, S. / Davis, L. / Duncan, W.J. / Marsh, E.M. / Moss, R.H. / Rothwell, W.J.M. / Skevington, P.J. / Spiller, G.D.T. et al. | 1991
- 259
-
Silicon spike-doping of GaAs with AP-MOVPESchmidt, Peter / Deppert, Knut / Kostial, Helmar et al. | 1991
- 263
-
The influence of substrate orientation and mis-orientation on the Si-doping of GaAs grown by MOVPETang, X. / Nijenhuis, J. te / Li, Y. / Giling, L.J. et al. | 1991
- 268
-
Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxyTischler, M.A. / Potemski, R.M. / Kuech, T.F. / Cardone, F. / Goorsky, M.S. / Scilla, G. et al. | 1991
- 274
-
On the “tunnel” diffusion of iron dopant in InPYoung, E.W.A. / Fontijn, G.M. et al. | 1991
- 279
-
Carbon doping exceeding 1020 cm-3 in GaAs grown by AP-MOVPEHanna, M.C. / Lu, Z.H. / Mao, E.W. / McCormick, T. / Oh, E.G. / Majerfeld, A. / Szmyd, D.M. et al. | 1991
- 281
-
Alternative precursors for III–V MOVPE criteria for evaluationBrauers, A. et al. | 1991
- 290
-
Alternative group V precursors for CVD applicationsLum, R.M. / Klingert, J.K. et al. | 1991
- 297
-
Precursors for II–VI semiconductors: requirements and developmentsJones, A.C. / Wright, P.J. / Cockayne, B. et al. | 1991
- 309
-
Physical properties of non-pyrophoric group III precursors for MOVPEPohl, L. / Hostalek, M. / Schumann, H. / Hartmann, U. / Wassermann, W. / Brauers, A. / Regel, G.K. / Hövel, R. / Balk, P. / Scholz, F. et al. | 1991
- 314
-
Detection of phenylarsine in airZacheja, J. / Schütze, A. / Brauers, A. / Kohl, D. et al. | 1991
- 319
-
Screening of organotellurium compounds for use as MOVPE precursorsHails, J.E. / Irvine, S.J.C. et al. | 1991
- 325
-
Synthesis and decomposition studies of dialkyltellurides of type RTeR′McQueen, A. Ewan D. / Culshaw, Peter N. / Walton, John C. / Shenai-Khatkhate, D.V. / Cole-Hamilton, David J. / Mullin, J. Brian et al. | 1991
- 331
-
Epitaxial growth of GaAs with (C2H5)2GaCl and AsH3 in a hot-wall systemBuchan, N.I. / Kuech, T.F. / Tischler, M.A. / Potemski, R. et al. | 1991
- 337
-
Growth of GaAs by MOCVD using a solid arsenic sourcePen˜a-Sierra, R. / Castro-Zavala, J.G. / Escobosa, A. et al. | 1991
- 342
-
Control of residual impurity incorporation in tertiarybutylarsine-grown GaAsHaacke, G. / Watkins, S.P. / Buckhard, H. et al. | 1991
- 348
-
Trisdimethylaminoarsine as As source for the LP-MOVPE of GaAsZimmer, M.H. / Hövel, R. / Brysch, W. / Brauers, A. / Balk, P. et al. | 1991
- 350
-
Growth of low carbon content AlxGa1−xAs by reduced pressure MOVPE using trimethylamine alaneJones, A.C. / Rushworth, S.A. et al. | 1991
- 351
-
Growth of GaInP over the whole composition range by OMVPE using tertiarybutylphosphine for the phosphorus sourceTakeda, Yoshikazu / Araki, Soichiro / Takemi, Masayoshi / Noda, Susumu / Sasaki, Akio et al. | 1991
- 355
-
Growth of InP with novel In and P precursorsHövel, R. / Brianese, N. / Brauers, A. / Balk, P. / Zimmer, M. / Hostalek, M. / Pohl, L. et al. | 1991
- 360
-
Atmospheric-pressure MOVPE growth of InP using Lewis base monovalent cyclopentadienyl indiumOnuma, K. / Kasahara, A. / Kato, K. / Aihara, N. / Udagawa, T. et al. | 1991
- 365
-
Novel liquid precursors for the growth of InP and GaInAs epitaxial layers by MOVPEScholz, F. / Molassioti, A. / Moser, M. / Notheisen, B. / Streubel, K. / Hostalek, M. / Pohl, L. et al. | 1991
- 370
-
MOVPE growth of uniform AlGaAs and InGaAs using organoarsine with inverted-horizontal atmospheric-pressure reactorKikkawa, T. / Tanaka, H. / Komeno, J. et al. | 1991
- 376
-
MOVPE of AlN and GaN by using novel precursorsHo, Kwok-Lun / Jensen, Klavs F. / Hwang, Jen-Wei / Gladfelter, Wayne L. / Evans, John F. et al. | 1991
- 381
-
Transition metal doping of LP-MOCVD-grown InPWolf, T. / Krost, A. / Bimberg, D. / Reier, F. / Harde, P. / Winterfeld, J. / Schumann, H. et al. | 1991
- 386
-
Purity of zinc precursors and the properties of epitaxial ZnSe grown by atmospheric pressure metalorganic chemical vapour depositionYates, H.M. / Williams, J.O. et al. | 1991
- 390
-
MOVPE of ZnSe using organometallic allyl selenium precursorsPatnaik, Sanjay / Jensen, Klavs F. / Giapis, Konstantinos P. et al. | 1991
- 396
-
Growth of GaInAs bulk mixed crystals as a substrate with a tailored lattice parameterSell, H.-J. et al. | 1991
- 403
-
High quality AlxGa1−x−yInyP alloys grown by MOVPE on (311) B GaAs substratesValster, A. / Liedenbaum, C.T.H.F. / Finke, M.N. / Severens, A.L.G. / Boermans, M.J.B. / Vandenhoudt, D.E.W. / Bulle-Lieuwma, C.W.T. et al. | 1991
- 410
-
Hetero-epitaxy of ZnSiAs2/GaAs grown by atmospheric pressure MOVPEAchargui, N. / Benachenhou, A. / Foucaran, A. / Bougnot, G. / Coulon, P. / Laurenti, J.P. / Camassel, J. et al. | 1991
- 416
-
OMVPE growth and characterization of Bi-containing III–V alloysMa, K.Y. / Fang, Z.M. / Cohen, R.M. / Stringfellow, G.B. et al. | 1991
- 422
-
GaSb/InAs heterojunctions grown by MOVPEHaywood, S.K. / Martin, R.W. / Mason, N.J. / Nicholas, R.J. / Walker, P.J. et al. | 1991
- 428
-
Investigation of MOCVD growth of AlxGa1−xAs/GaAs and AlxGa1−xAs/GaAs/AlxGa1−xAs/GaAs multilayer structures with high Al contentHongkai, Gao / Feng, Yun / Jikang, Zhang / Xun, Hou / Ping, Gong et al. | 1991
- 434
-
Optical and electrical properties of the AlxGa1−xAs/GaAs single heterojunctions grown by low pressure MOVPEGuimar∼aes, F.E.G. / Gyuro, I. / Scheffer, F. / Heuken, M. / Heime, K. et al. | 1991
- 440
-
Low contact-resistance GaAs/AlGaAs regrowth interfaces and compositional grading layer formation during growth by metalorganic vapor phase epitaxyHiruma, Kenji / Haga, Tooru / Usagawa, Toshiyuki / Ihara, Ayako et al. | 1991
- 445
-
Growth of highly uniform, reproducible InGaAs films in a multiwafer rotating disk reactor by MOCVDMcKee, M.A. / Norris, P.E. / Stall, R.A. / Tompa, G.S. / Chern, C.S. / Noh, D. / Kang, S.S. / Jasinski, T.J. et al. | 1991
- 452
-
Scanning transmission electron microscopy of heterointerfaces grown by metalorganic vapor phase epitaxy (MOVPE)Lakner, H. / Bollig, B. / Kubalek, E. / Heuken, M. / Heime, K. / Scheffer, F. / Guimar∼aes, F.E.G. et al. | 1991
- 458
-
MOVPE growth and characterization of strained layersPistol, M.-E. / Gustafsson, A. / Gerling, M. / Samuelson, L. / Titze, H. et al. | 1991
- 468
-
Surface morphology improvement of GaAs-on-Si using a two-reactor MOCVD system and an AlAs/GaAs low temperature buffer layer: an approach to crack-free GaAs-on-SiNishimura, T. / Kadoiwa, K. / Hayafuji, N. / Miyashita, M. / Mitsui, K. / Kumabe, H. / Murotani, T. et al. | 1991
- 473
-
MOCVD growth of GaAs on Si using (Al,In) GaAs/GaAs buffer layerFujita, K. / Shiba, Y. / Asai, K. et al. | 1991
- 479
-
Very low dislocation density GaAs on Si using superlattices grown by MOCVDSoga, Tetsuo / Nishikawa, Hironobu / Jimbo, Takashi / Umeno, Masayoshi et al. | 1991
- 483
-
Optical quality improvement of MOVPE grown GaAlAs/GaAs double heterostructures on silicon substratesDraïdia, N. / Azoulay, R. / Dugrand, L. / Papadopoulo, A.C. / Gao, Y. / Sermage, B. / Ossart, P. / Meddeb, J. et al. | 1991
- 489
-
High quality GaAs on Si using Si0.04Ge0.96/Ge buffer layersVenkatasubramanian, R. / Timmons, M.L. / Posthill, J.B. / Keyes, B.M. / Ahrenkiel, R.K. et al. | 1991
- 494
-
LP-MOVPE growth of antiphase domain free InP on (001) Si using low temperature processingGrundmann, M. / Krost, A. / Bimberg, D. et al. | 1991
- 496
-
Critical layer thickness of MOVPE-grown GaAs on InxGa1−xAste Nijenhuis, J. / van der Wel, P.J. / van Asten, R.W.F. / Hageman, P.R. / Giling, L.J. et al. | 1991
- 502
-
Improvement of the crystalline, optical and electrical quality of MOVPE GaInSb layersBougnot, G. / Delannoy, F. / Pascal, F. / Grosse, P. / Giani, A. / Kaoukab, J. / Bougnot, J. / Fourcade, R. / Walker, P.J. / Mason, N.J. et al. | 1991
- 509
-
MOVPE growth of GaN on a misoriented sapphire substrateHiramatsu, Kazumasa / Amano, Hiroshi / Akasaki, Isamu / Kato, Hisaki / Koide, Norikatsu / Manabe, Katsuhide et al. | 1991
- 513
-
MOVPE growth of GaP and GaAsxP1−x on (111)-oriented GaPTitze, H. / Gerling, M. / Pistol, M.-E. / Samuelson, L. et al. | 1991
- 518
-
Absorption characteristics of GaSb/InAs and InSb/InAs SLSs grown on (111) GaAs by MOVPELakrimi, M. / Mason, N.J. / Nicholas, R.J. / Stringfellow, G.B. / Summers, G. / Walker, P.J. et al. | 1991
- 520
-
Growth and analysis of quantum well structuresGrützmacher, Detlev et al. | 1991
- 531
-
Temperature resolved photoluminescence investigations on InGaAs/InP MQWsSchwedler, R. / Reinhardt, F. / Grützmacher, D. / Wolter, K. et al. | 1991
- 537
-
Effect of growth parameters on the interfacial structure of GaInAs/InP quantum wellsHergeth, J. / Grützmacher, D. / Reinhardt, F. / Balk, P. et al. | 1991
- 543
-
Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequenceCamassel, J. / Laurenti, J.P. / Juillaguet, S. / Reinhardt, F. / Wolter, K. / Kurz, H. / Grützmacher, D. et al. | 1991
- 549
-
Lateral and vertical composition control in MOCVD-grown InP/GaInAs(P) structuresCureton, C.G. / Thrush, E.J. / Briggs, A.T.R. et al. | 1991
- 555
-
Determination of the band discontinuity of MOCVD grown In1−xGaxAs/In1-yAlyAs heterostructures with optical and structural methodsBöhrer, J. / Grundmann, M. / Lienert, U. / Bimberg, D. / Ishikawa, H. / Kamada, M. / Watanabe, N. et al. | 1991
- 561
-
MOVPE of In(GaAs)P/InGaAs MQW structuresWiedemann, P. / Klenk, M. / Körber, W. / Koerner, U. / Weinmann, R. / Zielinski, E. / Speier, P. et al. | 1991
- 567
-
OMVPE growth of GaInAs/InP and GaInAs/GaInAsP quantum wellsKamei, H. / Hayashi, H. et al. | 1991
- 573
-
Influence of the gas switching sequence on the optical properties of ultrathin InGaAs/InP quantum wellsLandgren, G. / Ojala, P. / Ekström, O. et al. | 1991
- 578
-
MOVPE growth and optical properties of AlGaInP/GaInP strained single quantum well structuresKondo, Makoto / Domen, Kay / Anayama, Chikashi / Tanahashi, Toshiyuki / Nakajima, Kazuo et al. | 1991
- 583
-
Investigation of InxGa1−xAs/GaAs strained quantum well structures grown on non-planar substrates by MOCVDGrodzinski, Piotr / Zou, Yao / Osinski, Julian S. / Dapkus, P. Daniel et al. | 1991
- 591
-
Patterning and overgrowth of nanostructure quantum well wire arrays by LP-MOVPEKaram, N.H. / Mastrovito, A. / Haven, V. / Ismail, K. / Pennycook, S. / Smith, Henry I. et al. | 1991
- 598
-
MOVPE of narrow band gap II–VI materialsTriboulet, R. et al. | 1991
- 605
-
The growth of CMT on GaAs for high quality linear arrays of MWIR and LWIR photodiodesSmith, L.M. / Byrne, C.F. / Patel, D. / Knowles, P. / Thompson, J. / Jenkin, G.T. / Nguyen Duy, T. / Durand, A. / Bourdillot, M. et al. | 1991
- 610
-
Low temperature MOCVD of Hg1−xCdxTe on 311, 511, 711 and shaped GaAsPain, G.N. / Sandford, C. / Smith, G.K.G. / Stevenson, A.W. / Gao, D. / Wielunski, L.S. / Russo, S.P. / Reeves, G.K. / Elliman, R. et al. | 1991
- 621
-
Reaction measurements and growth of HgTe/CdTe by photo-assisted MOCVD using an excimer laserFujita, Y. / Terada, T. / Fujii, S. / Iuchi, T. et al. | 1991
- 626
-
Low temperature growth of (Cd,Hg) Te layers by MOVPEDesjonquères, F. / Tromson-Carli, A. / Cheuvart, P. / Druilhe, R. / Grattepain, C. / Katty, A. / Marfaing, Y. / Triboulet, R. / Lorans, D. et al. | 1991
- 632
-
HRTEM studies of defects and interdiffusion in Hg1−x−yMnyCdxTe (O⩽x, y⩽1) grown by low temperature MOCVDPain, G.N. / Rossouw, C.J. / Glanvill, S.R. / Rowe, R.S. / Dickson, R.S. / Deacon, G.B. / West, B.O. et al. | 1991
- 637
-
MOVPE growth of wide bandgap II–VI materialsKukimoto, Hiroshi et al. | 1991
- 644
-
Surface photochemical reactions for alkyl group elimination from precursors in OMVPEFujita, Shizuo / Maruo, Seiji / Ishio, Hiromu / Murawala, Prakash A. / Fujita, Shigeo et al. | 1991
- 649
-
The effects of photo-assisted MOCVD on the doping of Na acceptors into ZnS epitaxial layersOhno, Tetsuichiro / Taguchi, Tsunemasa et al. | 1991
- 653
-
Effects of Ar ion laser irradiation on MOVPE of ZnSe using DMZn and DMSe as reactantsYoshikawa, Akihiko / Okamoto, Tamotsu / Fujimoto, Tsuyoshi et al. | 1991
- 659
-
High quality over-epilayer growth of ZnSe on Li+-implanted ZnSe epilayers by atmospheric pressure MOVPEYodo, Tokuo / Ueda, Kazuhiro / Morio, Kenji / Yamashita, Ken / Tanaka, Shuhei et al. | 1991
- 664
-
MOVPE growth and characterisation of CdTe on CdS single crystal substratesSimmons, M.Y. / Brown, P.D. / Durose, K. et al. | 1991
- 670
-
Raman characterization of ZnSe/GaAs MOVPE heterostructuresPagès, O. / Renucci, M. / Briot, O. / Tempier, N. / Aulombard, R.L. et al. | 1991
- 674
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Properties of Zn1−xCdxS ternary and Zn1−xCdxS1−ySey quaternary thin films on GaAs grown by OMVPEFujita, Shizuo / Hayashi, Shigeo / Funato, Mitsuru / Yoshie, Tomoyuki / Fujita, Shigeo et al. | 1991
- 674
-
Properties of Zn1-xCdS ternary and Zn1-xCdxS1-ySey quaternary thin films on GaAs grown by OMVPEFujita, S. / Hayashi, S. / Funato, M. / Yoshie, T. et al. | 1991
- 679
-
Doping of nitrogen in ZnSe films: improved doping properties in ZnSe/ZnSSe periodic layered structures grown on GaAs by MOVPESuemune, I. / Masato, H. / Nakanishi, K. / Kuroda, Y. / Yamanishi, M. et al. | 1991
- 683
-
MOCVD superconducting oxide filmsHirai, Toshio / Yamane, Hisanori et al. | 1991
- 692
-
Fabrication and characterization of Bi-Sr-Ca-Cu-O MOCVD thin filmsSugimoto, T. / Yoshida, M. / Yamaguchi, K. / Yamada, Y. / Sugawara, K. / Shiohara, Y. / Tanaka, S. et al. | 1991
- 699
-
In-situ growth of YBCO high-T c superconducting thin films by plasma-enhanced metalorganic chemical vapor depositionZhao, J. / Chern, C.S. / Li, Y.Q. / Noh, D.W. / Norris, P.E. / Zawadzki, P. / Kear, B. / Gallois, B. et al. | 1991
- 705
-
Preparation and properties of superconducting Bi–Sr–Ca–Cu–O thin films on polycristalline silver substrates by organometallic chemical vapor depositionZhang, J.M. / Wessels, B.W. / Richeson, D.S. / Marks, T.J. et al. | 1991
- 710
-
Preparation and properties of Ba-deficient superconducting thin Y–Ba–Cu–O filmsSouc, J. / Machajdik, D. / Smatko, V. / Strbik, V. / Fröhlich, K. / Hrib, S. / Stefanik, S. / Kordos, P. / Ivan, J. et al. | 1991
- 712
-
Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor depositionWills, L.A. / Feil, W.A. / Wessels, B.W. / Tonge, L.M. / Marks, T.J. et al. | 1991
- 716
-
Quantum wire lasers by OMCVD growth on nonplanar substratesBhat, R. / Kapon, E. / Simhony, S. / Colas, E. / Hwang, D.M. / Stoffel, N.G. / Koza, M.A. et al. | 1991
- 724
-
MOVPE of AlGaInP/GaInP heterostructures for visible lasersRoentgen, P. / Heuberger, W. / Bona, G.L. / Unger, P. et al. | 1991
- 731
-
Structures for improved 1.5 μm wavelength lasers grown by LP-OMVPE; InGaAs-InP strained-layer quantum wells a good candidateThijs, P.J.A. / Montie, E.A. / van Dongen, T. et al. | 1991
- 731
-
Structures for improved 1.5 mu m wavelength lasers grown by LP-OMVPE; InGaAs-InP strained-layer quantum wells a good candidateThijs, P.J.A. / Montie, E.A. / Dongen, T. van et al. | 1991
- 741
-
Metalorganic chemical vapor deposition of InGaAs-GaAs-AlGaAs strained-layer quantum well lasersYork, P.K. / Beernink, K.J. / Kim, J. / Alwan, J.J. / Coleman, J.J. / Wayman, C.M. et al. | 1991
- 751
-
Reproducible growth of narrow linewidth multiple quantum well graded index separate confinement distributed feedback (MQW-GRIN-SCH-DFB) lasers by MOVPETanbun-Ek, T. / Logan, R.A. / Temkin, H. / Olsson, N.A. / Wu, M.C. / Sergent, A.M. / Wecht, K.W. et al. | 1991
- 757
-
Room temperature low threshold CW operation of MOCVD-grown AlGaAs/GaAs SQW lasers on Si substrates with SiO2 back-coatingEgawa, Takashi / Tada, Hitoshi / Kobayashi, Yasufumi / Soga, Tetsuo / Jimbo, Takashi / Umeno, Masayoshi et al. | 1991
- 761
-
Low threshold 1.5 μm SCH-MQW lasers by atmospheric pressure MOVPE and direct comparison of low versus atmospheric pressure MOVPE laser growthsOugazzaden, A. / Ganière, J.-D. / Gao, Y. / Rao, E.V.K. / Sermage, B. / Kazmierski, C. / Mircea, A. et al. | 1991
- 761
-
Low threshold 1.5 mu m SCH-MQW lasers by atmospheric pressure MOVPE and direct comparison of low versus atmospheric pressure MOVPE laser growthsOugazzaden, A. / Ganiere, J.D. / Gao, Y. / Rao, E.V.K. / Sermage, B. / Kazmierski, C. / Mircea, A. et al. | 1991
- 767
-
A new selective MOVPE regrowth process utilizing in-situ vapor phase etching for optoelectronic integrated circuitsShimoyama, Kenji / Inoue, Yuichi / Katoh, Masanori / Gotoh, Hideki / Suzuki, Yoshihiro / Yajima, Hiroyoshi et al. | 1991
- 772
-
Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substratesBhat, R. / Caneau, C. / Zah, C.E. / Koza, M.A. / Bonner, W.A. / Hwang, D.M. / Schwarz, S.A. / Menocal, S.G. / Favire, F.G. et al. | 1991
- 779
-
Interaction of the dopants Mg and Si in AlxGa1−x As/GaAs heterolayers (MOVPE): application to DQW laser structuresKorte, L. / Treichler, R. / Schreiber, M. / Tanner, Ch. / Kristen, G. / Hanke, C. / Weimann, G. et al. | 1991
- 784
-
Growth and assessment of InGaAs/InGaAlAs/InP multiple quantum well lasersGlew, R.W. / Greene, P.D. / Henshall, G.D. / Lowney, C. / Stagg, J.P. / Whiteaway, J.E.A. / Garrett, B. / Norman, A.G. et al. | 1991
- 790
-
In0.47Ga0.53As-InP heterostructures for vertical cavity surface emitting lasers at 1.65 mu m wavelengthDupuis, R.D. / Deppe, D.G. / Pinzone, C.J. / Gerrard, N.D. / Singh, S. / Zydzik, G.J. / Ziel, J.P. van der / Green, C.A. et al. | 1991
- 790
-
In0.47Ga0.53As-InP heterostructures for vertical cavity surface emitting lasers at 1.65 μm wavelengthDupuis, R.D. / Deppe, D.G. / Pinzone, C.J. / Gerrard, N.D. / Singh, S. / Zydzik, G.J. / van der Ziel, J.P. / Green, C.A. et al. | 1991
- 796
-
Strained-layer InGaAs/InGaAsP MQW structures and their application to 1.67 μm lasers grown by metalorganic vapor phase epitaxyYamamoto, Mitsuo / Oishi, Mamoru / Sudo, Hiromi / Nakano, Junichi / Tsuzuki, Nobuyori et al. | 1991
- 802
-
Lasing characteristics of InGaAs/InGaAsP MQW structures grown by low-pressure MOVPERosenzweig, M. / Ebert, W. / Franke, D. / Grote, N. / Sartorius, B. / Wolfram, P. et al. | 1991
- 806
-
InP based optoelectronicsPütz, Norbert et al. | 1991
- 822
-
Selective MOVPE growth of GaAs on Si and its applications to LEDsAckaert, A. / Demeester, P. / Buydens, L. / Coudenys, G. / Van Daele, P. / Renaud, M. et al. | 1991
- 827
-
Improvement of InP crystal quality grown on GaAs substrates and device applicationsKimura, Tatsuya / Kimura, Tadashi / Ishimura, Eitaro / Uesugi, Fumito / Tsugami, Mari / Mizuguchi, Kazuo / Murotani, Toshio et al. | 1991
- 832
-
GaAs/GaAlAs surface emitting IR LED with Bragg reflector grown by MOCVDKato, T. / Susawa, H. / Hirotani, M. / Saka, T. / Ohashi, Y. / Shichi, E. / Shibata, S. et al. | 1991
- 836
-
Improving the performance of InAs1−xSbx/InSb infrared detectors grown by metalorganic chemical vapor depositionBiefeld, R.M. / Wendt, J.R. / Kurtz, S.R. et al. | 1991
- 840
-
Two-step MOVPE growth for planar InP/InGaAs/InP pin-FET combinations with locally diffused buffer layerEbbinghaus, G. / Strzoda, R. / Scherg, T. / Albrecht, H. / Penz, R. / Lauterbach, C. et al. | 1991
- 845
-
Growth and characterization of AlGaAs/GaAs quantum well structures for the fabrication of long wavelength infrared detectorsPaska, Z.F. / Andersson, J.Y. / Lundqvist, L. / Olsson, C.-O.A. et al. | 1991
- 850
-
Application of AP MOVPE to a new butt-coupling schemeRose, B. / Remiens, D. / Hornung, V. / Robein, D. et al. | 1991
- 855
-
High optical and electrical quality GaInAs/InP, GaAs/InP double heterostructures for optoelectronic integrationAndré, J.P. / Patillon, J.N. / Riglet, P. / Lesiourd, J.Y. / Le Coz, H. / Martin, B.G. et al. | 1991
- 860
-
The use of InP-based semiconductor reflective stacks for enhanced device performanceThompson, J. / Wood, A.K. / Moseley, A.J. / Kearley, M.Q. / Topham, P.J. / Maung, N. / Carr, N. et al. | 1991
- 867
-
LP-MOVPE growth and characterization of wide-gap InGaAsP/InP layers (λg < 1.2 μm) for optical waveguide applicationsReier, F.W. / Harde, P. / Kaiser, H. et al. | 1991
- 867
-
LP-MOVPE growth and characterization of wide-gap InGaAsP/InP layers ( lambda g<1.2 mu m) for optical waveguide applicationsReier, F.W. / Harde, P. / Kaiser, H. et al. | 1991
- 871
-
A novel technique for the preservation of gratings in InP and InGaAsP and for the simultaneous preservation of InP, InGaAs, and InGaAsP in OMCVDBhat, R. / Koza, M.A. / Zah, C.E. / Caneau, C. / Chang, C.C. / Schwarz, S.A. / Gozdz, A.S. / Lin, P.S.D. / Yi-Yan, A. et al. | 1991
- 878
-
A new approach for the integration of optoelectronic devices using laser selective area epitaxyLiu, H. / Roberts, J.C. / Ramdani, J. / Bedair, S.M. / Farari, J. / Vilcot, J.P. / Decoster, D. et al. | 1991
- 883
-
High frequency AlGaAs/GaAs heterojunction bipolar transistors: the role of MOVPEPackeiser, G. / Tews, H. / Zwicknagl, P. et al. | 1991
- 893
-
Qualification of OMVPE AlGaAs/GaAs HBT structures using nondestructive photoreflectance spectroscopyBottka, N. / Gaskill, D.K. / Wright, P.D. / Kaliski, R.W. / Williams, D.A. et al. | 1991
- 898
-
MOVPE growth of highly zinc-doped bases for GaAs/AlGaAs heterojunction bipolar transistorsTanaka, S. / Ohkubo, M. / Irikawa, M. / Kikuta, T. et al. | 1991
- 903
-
LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistorsAshizawa, Yasuo / Noda, Takao / Morizuka, Kouhei / Asaka, Masayuki / Obara, Masao et al. | 1991
- 909
-
Growth and performance of AlGaAs/GaAs heterostructure bipolar transistorsNordell, N. / Willén, B. / Olsson, C.-O.A. / Westergren, U. / Landgren, G. et al. | 1991
- 915
-
AlGaAs/GaAs p-MODFET materials grown using intrinsic carbon dopingRoberts, J.S. / Singh, K.C. / Button, C.C. / David, J.P.R. / Woodhead, J. et al. | 1991
- 921
-
MOVPE grown high performance 0.25 μm AlGaAs/InGaAs/GaAs pseudomorphic MODFETsThompson, A.G. / Levy, H.M. / Mao, B.-Y. / Martin, G. / Lee, G.Y. et al. | 1991
- 921
-
MOVPE grown high performance 0.25 mu m AlGaAs/InGaAs/GaAs pseudomorphic MODFETsThompson, A.G. / Levy, H.M. / Mao, B.Y. / Martin, G. / Lee, G.Y. et al. | 1991
- 926
-
Electrical and structural characterization of GaAs on InP grown by OMCVD; application to GaAs MESFETsAzoulay, R. / Clei, A. / Dugrand, L. / Draïdia, auN. / Leroux, G. / Biblemont, S. et al. | 1991
- 932
-
MOVPE of AlInAs HEMT structuresAina, Leye / Mattingly, Mike / Serio, Mary / Martin, Eric et al. | 1991
- 942
-
Pseudomorphic n-InGaP/InGaAs/GaAs grown by MOVPE for HEMT LSIsTakikawa, M. / Ohori, T. / Takechi, M. / Suzuki, M. / Komeno, J. et al. | 1991
- 947
-
Growth and characterization of double barrier resonant tunnelling diodesTews, H. / Neumann, R. / Schnell, R.D. et al. | 1991
- 952
-
InAs-GaSb hot electron transistors grown by metalorganic chemical vapor depositionTaira, K. / Nakamura, F. / Hase, I. / Kawai, H. / Mori, Y. et al. | 1991
- 956
-
Ultralow doping profiles for applications in 3D integrated varactor tuned oscillators grown by MOVPEGyuro, I. / Scheffer, F. / Joseph, M. / Roth, B. / Heuken, M. / Heime, K. et al. | 1991
- 960
-
Current status review and future prospects of CBE, MOMBE and GSMBETsang, W.T. et al. | 1991
- 969
-
Growth mechanism studies in CBE/MOMBEMartin, T. / Whitehouse, C.R. / Lane, P.A. et al. | 1991
- 978
-
Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloysBenchimol, J.L. / Le Roux, G. / Thibierge, H. / Daguet, C. / Alexandre, F. / Brillouet, F. et al. | 1991
- 982
-
Carbon incorporation in GaAs and AlGaAs grown by MOMBE using trimethlgalliumAbernathy, C.R. et al. | 1991
- 989
-
Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBEKayser, O. et al. | 1991
- 999
-
Some comparisons of chemical beam epitaxy with gas source molecular beam epitaxyDavies, G.J. / Skevington, P.J. / Scott, E.G. / French, C.L. / Foord, J.S. et al. | 1991
- 1009
-
MOMBE (metalorganic molecular beam epitaxy) growth of InGaAlAsSb system on GaSbAsahi, Hajime / Kaneko, Tadaaki / Okuno, Yasutoshi / Gonda, Shun-ichi et al. | 1991
- 1015
-
Si and Ge gas-source molecular beam epitaxy (GSMBE)Suemitsu, Maki / Hirose, Fumihiko / Miyamoto, Nobuo et al. | 1991
- 1021
-
New starting materials for MOMBEWeyers, M. et al. | 1991
- 1030
-
Gas-source MBE growth and n-type doping of AlGaAs using TEG, TEA, AsH3 and Si2H6Fujii, T. / Ando, H. / Sandhu, A. / Ishikawa, H. / Sugiyama, Y. et al. | 1991
- 1036
-
Surface chemistry of a new III–V MOCVD reactant: PhAsH2 on GaAs(100)Schütze, A. / Zacheja, J. / Weyers, M. / Kohl, D. et al. | 1991
- 1038
-
Mechanistic aspects relating to the growth of GaxIn1−xAs by CBEFrench, C.L. / Wee, A.T.S. / Foord, J.S. / Davies, G.J. et al. | 1991
- 1040
-
Studies of the surface reactivity of novel hydride adduct precursors for CBE growth of III–V compoundsFoord, J.S. / Murrell, A.J. / O'Hare, D. / Singh, N.K. / Wee, A.T.S. / Whitaker, T.J. et al. | 1991
- 1041
-
Hydrogen-plasma and photo-effects on MOMBE of GaAsSuemune, I. / Hamaoka, K. / Kishimoto, A. / Koui, T. / Honda, Y. / Yamanishi, M. et al. | 1991
- 1043
-
Doping of GaAs and InP in MOMBE using DEZn, TESn and DETeMusolf, J. / Marx, D. / Kohl, A. / Weyers, M. / Balk, P. et al. | 1991
- 1045
-
Applications of spectroellipsometry to the growth of GaAs and AlGaAs by metalorganic molecular beam epitaxyQuinn, W.E. / Aspnes, D.E. / Gregory, S. et al. | 1991
- 1047
-
In situ control of the growing surface in high vacuum MOVPE of GaAsJönsson, J. / Deppert, K. / Jeppesen, S. / Paulsson, G. / Samuelson, L. / Schmidt, P. et al. | 1991
- 1049
-
Selective growth of p+-GaAs by metalorganic molecular beam epitaxyFuruhata, N. / Shimawaki, H. / Okamoto, A. et al. | 1991
- 1051
-
Growth and diffusion study of carbon doped GaAs superlattice grown by chemical beam epitaxyChiu, T.H. / Cunningham, J.E. / Ditzenberger, J.A. / Jan, W.Y. et al. | 1991
- 1053
-
Correlation of carbon incorporation from TEG and effective V/III ratio on the surface in MOMBE grown GaAsKamp, M. / Mörsch, G. / Weyers, M. / Lüth, H. et al. | 1991
- 1055
-
CBE growth of GaInAs/InP wafers for surface emitting lasersUchida, Toshi K. / Uchida, T. / Mise, K. / Yokouchi, N. / Koyama, F. / Iga, K. et al. | 1991
- 1057
-
Growth of GaInAs by chemical beam epitaxyCarlin, J.F. / Rudra, A. / Houdré, R. / Staehli, J.L. / Ilegems, M. et al. | 1991
- 1060
-
Monolayer epitaxial growth of GaInAs ternary by MOMBEKawanishi, Hideo / Ikeda, Hirokazu et al. | 1991
- 1062
-
On the growth of GaInAs by MOMBE (CBE)Heinecke, H. / Baur, B. / Höger, R. / Miklis, A. / Jobst, B. et al. | 1991
- 1065
-
CBE growth of InGaAs for optoelectronic applicationsGenova, F. / Morello, G. / Autore, G. / Gastaldi, L. et al. | 1991
- 1068
-
The search for all-hydride MOMBE: examination of trimethylamine alane, trimethylamine gallane, and arsineBohling, D.A. / Muhr, G.T. / Abernathy, C.R. / Jordan, A.S. / Pearton, S.J. / Hobson, W.S. et al. | 1991
- 1070
-
The substrate—epitaxial interface of GaAs and InP grown by GSMBETappura, K. / Salokatve, A. / Rakennus, K. / Asonen, H. / Pessa, M. et al. | 1991
- 1072
-
Effects of surface pre-treatment and hydrogen on ALE of ZnSe on GaAs in MOMBEKawakami, Yoichi / Toyoda, Takashi / Wu, Yi-Hong / Fujita, Shizuo / Fujita, Shigeo et al. | 1991
- 1074
-
InGaAs MOMBE — system drift and material qualityWoelk, E. / Sherwin, M.E. / Munns, G.O. et al. | 1991
- 1076
-
MOMBE growth of high quality GaAs/GaInP heterostructuresMaurel, Ph. / Bove, Ph. / Garcia, J.C. / Hirtz, J.P. / Razeghi, M. et al. | 1991
- 1077
-
Author index| 1991
- 1091
-
Subject index| 1991
- ii
-
Editorial Board| 1991
- ix
-
Preface| 1991