Electrically active defects induced by hydrogen and helium implantations in Ge (English)
- New search for: Markevich, V.P.
- New search for: Bernardini, S.
- New search for: Hawkins, I.D.
- New search for: Peaker, A.R.
- New search for: Kolkovsky, Vl.
- New search for: Nylandsted Larsen, A.
- New search for: Dobaczewski, L.
- New search for: Markevich, V.P.
- New search for: Bernardini, S.
- New search for: Hawkins, I.D.
- New search for: Peaker, A.R.
- New search for: Kolkovsky, Vl.
- New search for: Nylandsted Larsen, A.
- New search for: Dobaczewski, L.
In:
Materials Science in Semiconductor Processing
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11
, 5-6
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354-359
;
2008
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Electrically active defects induced by hydrogen and helium implantations in Ge
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Contributors:Markevich, V.P. ( author ) / Bernardini, S. ( author ) / Hawkins, I.D. ( author ) / Peaker, A.R. ( author ) / Kolkovsky, Vl. ( author ) / Nylandsted Larsen, A. ( author ) / Dobaczewski, L. ( author )
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Published in:Materials Science in Semiconductor Processing ; 11, 5-6 ; 354-359
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Publisher:
- New search for: Elsevier Ltd
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Publication date:2008-01-01
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Size:6 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 11, Issue 5-6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 147
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E-MRS 2008 Spring Conference Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOSClaeys, Cor / Peaker, Tony / Fompeyrine, Jean / Frank, Martin / Vanhellemont, Jan et al. | 2009
- 148
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NANOSIL network of excellence—silicon-based nanostructures and nanodevices for long-term nanoelectronics applicationsBalestra, F. / Parker, E. / Leadley, D. / Mantl, S. / Dubois, E. / Engstrom, O. / Clerc, R. / Cristoloveanu, S. / Kurz, H. / Raskin, J.P. et al. | 2008
- 160
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Synthesis and functionalization of epitaxial quantum dot nanostructures for nanoelectronic architecturesHull, R. / Floro, J. / Graham, J. / Gray, J. / Gherasimova, M. / Portavoce, A. / Ross, F.M. et al. | 2008
- 169
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TEM characterization of Si nanowires grown by CVD on Si pre-structured by nanosphere lithographyLindner, Jörg K.N. / Bahloul-Hourlier, Djamila / Kraus, Daniel / Weinl, Michael / Mélin, Thierry / Stritzker, Bernd et al. | 2008
- 175
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Silicon nanodot-array device with multiple gatesJo, Mingyu / Kaizawa, Takuya / Arita, Masashi / Fujiwara, Akira / Yamazaki, Kenji / Ono, Yukinori / Inokawa, Hiroshi / Takahashi, Yasuo / Choi, Jung-Bum et al. | 2008
- 179
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Cathodoluminescence characterization of β-SiC nanowires and surface-related silicon dioxideFabbri, F. / Cavallini, A. / Attolini, G. / Rossi, F. / Salviati, G. / Dierre, B. / Fukata, N. / Sekiguchi, T. et al. | 2008
- 179
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Cathodoluminescence characterization of beta -SiC nanowires and surface-related silicon dioxideFabbri, F. / Cavallini, A. / Attolini, G. / Rossi, F. / Salviati, G. / Dierre, B. / Fukata, N. / Sekiguchi, T. et al. | 2008
- 182
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Oxidation characteristics of Si0.85Ge0.15 nanowiresKim, Sang-Yeon / Kim, Sun-Wook / Chang, Hyun-Jin / Seong, Han-Kyu / Choi, Heon-Jin / Ko, Dae-Hong et al. | 2008
- 187
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Sensing pulsed light by means of Multi-Walled Carbon NanotubesAmbrosio, A. / Ambrosio, M. / Ambrosone, G. / Carillo, V. / Coscia, U. / Grossi, V. / Maddalena, P. / Passacantando, M. / Perillo, E. / Raulo, A. et al. | 2008
- 190
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Nonequilibrium aspects of armchair graphene nanoribbon conductionDeretzis, I. / La Magna, A. et al. | 2008
- 195
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Germanium on sapphire substrates for system on a chipGamble, H.S. / Armstrong, B.M. / Baine, P.T. / Low, Y.H. / Rainey, P.V. / Low, Y.W. / McNeill, D.W. / Mitchell, S.J.N. / Montgomery, J.H. / Ruddell, F.H. et al. | 2008
- 199
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Organic electronics: Materials, technology and circuit design developments enabling new applicationsde Leeuw, D.M. / Cantatore, E. et al. | 2008
- 205
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The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?Vincent, B. / Damlencourt, J.F. / Morand, Y. / Pouydebasque, A. / Le Royer, C. / Clavelier, L. / Dechoux, N. / Rivallin, P. / Nguyen, T. / Cristoloveanu, S. et al. | 2008
- 214
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Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor depositionCammilleri, V.D. / Yam, V. / Fossard, F. / Renard, C. / Bouchier, D. / Zheng, Y. / Fazzini, P.F. / Houdellier, F. / Hÿtch, M. et al. | 2008
- 217
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Radiation damage of Ge-on-Si devicesOhyama, H. / Sakamoto, K. / Sukizaki, H. / Takakura, K. / Hayama, K. / Motoki, M. / Matsuo, K. / Nakamura, H. / Sawada, M. / Midorikawa, M. et al. | 2008
- 221
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XPS and IPE analysis of HfO2 band alignment with high-mobility semiconductorsPerego, M. / Seguini, G. / Fanciulli, M. et al. | 2008
- 226
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Charge transition levels of the Ge dangling bond defect at Ge/insulator interfacesBroqvist, Peter / Alkauskas, Audrius / Pasquarello, Alfredo et al. | 2008
- 230
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Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagramsAfanas’ev, V.V. / Stesmans, A. / Delabie, A. / Bellenger, F. / Houssa, M. / Lieten, R.R. / Merckling, C. / Penaud, J. / Brunco, D.P. / Meuris, M. et al. | 2008
- 236
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Atomic oxygen-assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devicesMolle, A. / Spiga, S. / Bhuiyan, M.N.K. / Tallarida, G. / Perego, M. / Wiemer, C. / Fanciulli, M. et al. | 2008
- 241
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Epitaxial anatase HfO2 on high-mobility substrate for ultra-scaled CMOS devicesDebernardi, A. / Wiemer, C. / Fanciulli, M. et al. | 2008
- 245
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Local crystal structural modifications in pulsed laser deposited high-k dielectric thin films on silicon and germaniumAlper Sahiner, Mehmet / Woicik, Joseph C. / Kurp, Timothy / Serfass, Jeffrey / Aranguren, Marc et al. | 2008
- 250
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Nanoscale electrical characterization of ultrathin high-k dielectric MOS stacks: A conducting AFM studyUppal, H.J. / Bernardini, S. / Efthymiou, E. / Volkos, S.N. / Dimoulas, A. / Markevich, V. / Hamilton, B. / Peaker, A.R. et al. | 2008
- 254
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Reliability assessment of SiO2/ZrO2 stack gate dielectric on strained-Si/Si0.8Ge0.2 heterolayers under dynamic and AC stressBera, M.K. / Mahata, C. / Maiti, C.K. et al. | 2008
- 259
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Accurate carrier profiling of n-type GaAs junctionsClarysse, T. / Brammertz, G. / Vanhaeren, D. / Eyben, P. / Goossens, J. / Clemente, F. / Meuris, M. / Vandervorst, W. / Srnanek, R. / Kinder, R. et al. | 2008
- 267
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Activation level in boron-doped thin germanium-on-insulator (GeOI): Extraction method and impact of mobilityHutin, Louis / Koffel, Stéphane / Le Royer, Cyrille / Clavelier, Laurent / Scheiblin, Pascal / Mazzocchi, Vincent / Deleonibus, Simon et al. | 2008
- 271
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Nanoscale strain characterisation for ultimate CMOS and beyondOlsen, Sarah H. / Dobrosz, Peter / Agaiby, Rouzet M.B. / Tsang, Yuk Lun / Alatise, Olayiwola / Bull, Stephen J. / O’Neill, Anthony G. / Moselund, Kirsten E. / Ionescu, Adrian M. / Majhi, Prashant et al. | 2009
- 279
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Raman spectroscopy determination of composition and strain in heterostructuresPezzoli, F. / Bonera, E. / Grilli, E. / Guzzi, M. / Sanguinetti, S. / Chrastina, D. / Isella, G. / von Känel, H. / Wintersberger, E. / Stangl, J. et al. | 2008
- 285
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Stress analysis of Si1−xGex embedded source/drain junctionsBargallo Gonzalez, M. / Simoen, E. / Naka, N. / Okuno, Y. / Eneman, G. / Hikavyy, A. / Verheyen, P. / Loo, R. / Claeys, C. / Machkaoutsan, V. et al. | 2008
- 291
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Metal implants-dependent carrier recombination characteristics in GeGaubas, E. / Uleckas, A. / Vanhellemont, J. / Geens, W. et al. | 2008
- 295
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Elemental specificity of ion cores and ionization entropy of vacancy-group-V-impurity atom pairs in Ge crystals: ACAR and DLTS dataArutyunov, N.Yu. / Emtsev, V.V. et al. | 2008
- 300
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Influence of the pre-treatment anneal on Co–germanide Schottky contactsLajaunie, L. / David, M.L. / Pailloux, F. / Tromas, C. / Simoen, E. / Claeys, C. / Barbot, J.F. et al. | 2008
- 305
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High-quality NiGe/Ge diodes for Schottky barrier MOSFETsHusain, M.K. / Li, X.V. / de Groot, C.H. et al. | 2008
- 310
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Effects of electron and proton irradiation on embedded SiGe source/drain diodesOhyama, H. / Nagano, T. / Takakura, K. / Motoki, M. / Matsuo, K. / Nakamura, H. / Sawada, M. / Midorikawa / Kuboyama, S. / Gonzalez, M.B. et al. | 2008
- 314
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Radiation damage in proton-irradiated strained Si n-MOSFETsHayama, K. / Takakura, K. / Ohtani, T. / Kudou, T. / Ohyama, H. / Mercha, A. / Simoen, E. / Claeys, C. et al. | 2008
- 319
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High-dielectric constant AlON prepared by RF gas-timing sputtering for high capacitance densityPoyai, A. / Bunjongpru, W. / Klunngien, N. / Porntheerapat, S. / Hruanan, C. / Sopitpan, S. / Nukeaw, J. et al. | 2008
- 319
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High-dielectric constant AION prepared by RF gas-timing sputtering for high capacitance densityPoyai, A. / Bunjongpru, W. / Klunngien, N. / Porntheerapat, S. / Hruanan, C. / Sopitpan, S. / Nukeaw, J. et al. | 2008
- 324
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Ab initio investigation of phosphorus and boron diffusion in germaniumJanke, C. / Jones, R. / Coutinho, J. / Öberg, S. / Briddon, P.R. et al. | 2008
- 328
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Ab-initio simulation of self-interstitial in germaniumŚpiewak, P. / Vanhellemont, J. / Sueoka, K. / Kurzydłowski, K.J. / Romandic, I. et al. | 2008
- 328
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Ab-initio simulation of self-intersitial in germaniumSpiewak, P. / Vanhellemont, J. / Sueoka, K. / Kurzydlowski, K.J. / Romandic, I. et al. | 2008
- 332
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Density-functional theory study of interstitial iron and its complexes with B and Al in dilute SiGe alloysCarvalho, A. / Coutinho, J. / Jones, R. / Barroso, M. / Goss, J.P. / Briddon, P.R. et al. | 2008
- 336
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No trace of divacancies at room temperature in germaniumKolkovsky, Vl. / Christian Petersen, M. / Nylandsted Larsen, A. / Mesli, A. et al. | 2008
- 340
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Density-functional theory study of Au, Ag and Cu defects in germaniumCarvalho, A. / Coutinho, J. / Jones, R. / Silva, E. / Öberg, S. / Briddon, P.R. et al. | 2008
- 344
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Complexes of self-interstitials with oxygen atoms in germaniumKhirunenko, L.I. / Pomozov, Yu.V. / Sosnin, M. / Markevich, V.P. / Murin, L.I. / Litvinov, V.V. / Carvalho, A. / Jones, R. / Coutinho, J. / Öberg, S. et al. | 2008
- 348
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Electrical characterization of defects introduced during metallization processes in n-type germaniumAuret, F.D. / Coelho, S.M.M. / Janse van Rensburg, P.J. / Nyamhere, C. / Meyer, W.E. et al. | 2008
- 354
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Electrically active defects induced by hydrogen and helium implantations in GeMarkevich, V.P. / Bernardini, S. / Hawkins, I.D. / Peaker, A.R. / Kolkovsky, Vl. / Nylandsted Larsen, A. / Dobaczewski, L. et al. | 2008
- 360
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Electrical passivation by hydrogen plasma treatment of transition metal impurities in germaniumLauwaert, J. / Van Gheluwe, J. / Clauws, P. et al. | 2008
- 364
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Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layersSimoen, E. / Brouwers, G. / Eneman, G. / Bargallo Gonzalez, M. / De Jaeger, B. / Mitard, J. / Brunco, D.P. / Souriau, L. / Cody, N. / Thomas, S. et al. | 2008
- 368
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Shallow boron implantations in Ge and the role of the pre-amorphization depthSimoen, E. / Brouwers, G. / Satta, A. / David, M.-L. / Pailloux, F. / Parmentier, B. / Clarysse, T. / Goossens, J. / Vandervorst, W. / Meuris, M. et al. | 2008
- 372
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Diffusion and activation of phosphorus in germaniumTsouroutas, P. / Tsoukalas, D. / Zergioti, I. / Cherkashin, N. / Claverie, A. et al. | 2008
- 378
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Simultaneous diffusion of Si and Ge in isotopically controlled heterostructuresKube, R. / Bracht, H. / Lundsgaard Hansen, J. / Nylandsted Larsen, A. / Haller, E.E. / Paul, S. / Lerch, W. et al. | 2008
- 384
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High-quality oxide formed by evaporation of SiO nanopowder: Application to MOSFETs on plastic substrates and GaN epilayersNozaki, S. / Kimura, S. / Koizumi, A. / Ono, H. / Uchida, K. et al. | 2008
- 390
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Very low leakage InGaAs/InAlAs pHEMTs for broadband (300MHz to 2GHz) low-noise applicationsBouloukou, A. / Boudjelida, B. / Sobih, A. / Boulay, S. / Sly, J. / Missous, M. et al. | 2008
- 394
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Electrical characterization of thiols self-assembled layers on GaP (111) structuresGhita, R.V. / Lazarescu, V. / Logofatu, C. / Negrila, C.C. / Lazarescu, M.F. et al. | 2009
- 398
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Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approachBoudjelida, B. / Sobih, A. / Bouloukou, A. / Boulay, S. / Arshad, S. / Sly, J. / Missous, M. et al. | 2008
- 402
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Low power, GHz class ADC for broadband applicationsTauqeer, T. / Sexton, J. / Sly, J. / Missous, M. et al. | 2009
- 407
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Material and process considerations for terahertz planar nanodevicesLu, X.F. / Xu, K.Y. / Wang, G. / Song, A.M. et al. | 2008