Improved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using Wet-NO Ge-surface pretreatment (English)
- New search for: Li, C.X.
- New search for: Zou, X.
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- New search for: Li, C.X.
- New search for: Zou, X.
- New search for: Xu, J.P.
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- Conference paper / Electronic Resource
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Title:Improved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using Wet-NO Ge-surface pretreatment
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Published in:
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- New search for: IEEE
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Publication date:2008-12-01
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Size:720244 byte
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Table of contents conference proceedings
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