Effects of electric and magnetic fields on electrons in a GaAs quantum box (English)
- New search for: Chakraborty, C.
- New search for: Lai, P.T.
- New search for: Chakraborty, C.
- New search for: Lai, P.T.
In:
Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)
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82-85
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2000
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ISBN:
- Conference paper / Electronic Resource
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Title:Effects of electric and magnetic fields on electrons in a GaAs quantum box
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Contributors:Chakraborty, C. ( author ) / Lai, P.T. ( author )
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Published in:
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Publisher:
- New search for: IEEE
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Publication date:2000-01-01
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Size:186127 byte
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ISBN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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SPICE compact modeling of PD-SOI CMOS devicesKuo, J.B. et al. | 2000
- 5
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Electrostatic discharge in semiconductor devices: overview of circuit protection techniquesVinson, J.E. / Liou, J.J. et al. | 2000
- 9
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Science, Technology and Industrialization of Flat Panel DisplayHwang, H. L. / Institute of Electrical and Electronics Engineers / University of Hong Kong et al. | 2000
- 12
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Opposite side floating gate SOI FLASH memory cellXinnan Lin, / Mansun Chan, / Hongmei Wang, et al. | 2000
- 16
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Negative Transconductance Effect in Metal Oxide Semiconductor Field Effect Transistors Fabricated with Ta~2O~5 Gate DielectricLai, B. C. M. / Lee, J. Y. M. / Institute of Electrical and Electronics Engineers / University of Hong Kong et al. | 2000
- 16
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Negative transconductance effect in metal oxide semiconductor field effect transistors fabricated with Ta/sub 2/O/sub 5/ gate dielectricLai, B.C.M. / Lee, J.Y.M. et al. | 2000
- 20
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Optimization of silicon Spreading-Resistance Temperature sensorBin Li, / Lai, P.T. / Chan, C.L. / Sin, J.K.O. et al. | 2000
- 24
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Study of low-frequency excess noise in RTA annealed n-type gallium nitrideZhu, C.F. / Fong, W.K. / Leung, B.H. / Cheng, C.C. / Surya, C. et al. | 2000
- 30
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Direct observation of ordered structures during oxidation of Si(111)He, J.Z. / Xu, J.B. / Xu, M.S. / Xu, J. / Ng, C.H. / Wilson, I.H. et al. | 2000
- 30
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Direct Observation of Ordered Structures in the Oxidation of Si(111)He, J. Z. / Xu, J. B. / Xu, M. S. / Xu, J. / Ng, C. H. / Wilson, I. H. / Institute of Electrical and Electronics Engineers / University of Hong Kong et al. | 2000
- 36
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Analysis of a novel Elevated Source Drain MOSFET with reduced Gate-Induced Drain-Leakage currentKyung-Whan Kim, / Chang-Soon Choi, / Woo-Young Choi, et al. | 2000
- 40
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New insights on RF CMOS stability related to bias, scaling, and temperatureSu, J.-G. / Wong, S.-C. / Chang, C.-Y. / Chiu, K.-Y. / Huang, T.-Y. / Ou, C.-T. / Kao, C.-H. / Chao, C.-J. et al. | 2000
- 44
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Optimized Short Channel Effect by Arsenic P-Halo implant Through Gate Electrode for 0.12mum P-MOSFETChen, C. / Cheng, C. Y. / Chou, J. W. / Huang, C. T. / Lin, K. C. / Cheng, Y. C. / Lin, C. Y. / Institute of Electrical and Electronics Engineers / University of Hong Kong et al. | 2000
- 44
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Optimization of short channel effect by arsenic P-Halo implant through polysilicon gate for 0.12 um P-MOSFETChen, C. / Chang, C.Y. / Chou, J.W. / Huang, C.T. / Lin, K.C. / Yao-Chin Cheng, / Chih-Yung Lin, et al. | 2000
- 48
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Short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devicesLin, S.C. / Yuan, K.H. / Kuo, J.B. et al. | 2000
- 50
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Fabrication of amorphous carbon films by using organic hydrocarbon sourceXu, J. / Li, W. / Chen, K.J. / Xu, J.B. et al. | 2000
- 56
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A new RF capacitance method to extract the effective channel length of MOSFET's using S-parametersSeonghearn Lee, et al. | 2000
- 56
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A New RF Capacitance Method to Extract the Effective Channel Length of MOSFET's Using S-ParameterLee, S. / Institute of Electrical and Electronics Engineers / University of Hong Kong et al. | 2000
- 60
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A new Self-Aligned Asymmetric Structure (SAAS) for 0.1 /spl mu/m MOSFET technologyChang-Soon Choi, / Kyung-Whan Kim, / Woo-Young Choi, et al. | 2000
- 60
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A New Self-Aligned Asymmetric Structure (SAAS) for 0.1mum MOSFET TechnologyChoi, C. S. / Kim, K. W. / Choi, W. Y. / Institute of Electrical and Electronics Engineers / University of Hong Kong et al. | 2000
- 64
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Measurement of Young's modulus of nickel silicide film by a surface profilerMing Qin, / Yuen, C.Y. / Poon, M.C. / Chan, W.Y. et al. | 2000
- 68
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Effects of grain boundaries on TFTs formed by high-temperature MILCZhikuan Zhang, / Hongmei Wang, / Mansun Chan, / Jagar, S. / Poon, M.C. / Ming Qin, / Yangyuan Wang, et al. | 2000
- 72
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TFT fabrication on MILC polysilicon film with pulsed rapid thermal annealingYuen, C.Y. / Poon, M.C. / Chan, M. / Chan, W.Y. / Qin, M. et al. | 2000
- 78
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Role of Teflon and LiCl on the humidity-sensing properties of porous anodized alumina filmChakraborty, S. / Lai, P.T. / Chakraborty, C. et al. | 2000
- 82
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Effects of electric and magnetic fields on electrons in a GaAs quantum boxChakraborty, C. / Lai, P.T. et al. | 2000
- 86
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A self-aligned structure AlGaAs/GaAs HBT's using silicon nitride sidewall techniqueBei Ping Yan, / Yang, E.S. et al. | 2000
- 90
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On the reliability of SiGe microwave power heterojunction bipolar transistorJinshu Zhang, / Pei-Hsin Tsien, / Peiyi Chen, / Nanver, L.K. / Slotboom, J.W. et al. | 2000
- 94
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Effect of electric field on the energy levels of two interacting electrons in a quantum dotChakraborty, C. / Lai, P.T. / Chakraborty, S. et al. | 2000
- 100
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New characteristics of direct hole tunneling through ultrathin gate oxide (2.7 nm) in p+/pMOS and its applicationsMin-Hwa Chi, / Chih-Hsing Yu, / Ming-Chen Chen, / Min-Chie Jeng, et al. | 2000
- 104
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RTP formed oxynitride via direct nitridation in N/sub 2/Khoueir, A. / Lu, Z.H. / Ng, W.T. / Tay, S.P. / Lait, P.T. et al. | 2000
- 104
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RTP Formed Oxynitride Via Direct Nitridation in N~2Khoueir, A. / Lu, Z. H. / Ng, W. T. / Tay, S. P. / Lai, P. T. / Institute of Electrical and Electronics Engineers / University of Hong Kong et al. | 2000
- 108
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Interface properties of N/sub 2/O-annealed SiO/sub 2//SiC systemChakraborty, S. / Lai, P.T. / Chan, C.L. / Cheng, Y.C. et al. | 2000
- 108
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Interface Properties of N~2O-annealed SiO~2/SiC SystemChakraborty, S. / Lai, P. T. / Chan, C. L. / Cheng, Y. C. / Institute of Electrical and Electronics Engineers / University of Hong Kong et al. | 2000
- 112
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Role of oxygen on the implantation related residual defects in siliconJianqing Wen, / Evans-Freeman, J. / Peaker, A.R. / Zhang, J.P. / Hemment, P.L.F. / Marsh, C.D. / Booker, G.R. et al. | 2000
- 116
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Investigation of the glassy layer formed at the top of porous silicon filmsWong, H. / Han, P.G. / Poon, M.C. / Gao, Y. et al. | 2000
- 122
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Avalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistorsBei Ping Yan, / Yang, E.S. et al. | 2000
- 126
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Statistical analysis of quantized inversion layer in MOS devices with ultra-thin gate oxide and high substrate doping levelsYutao Ma, / Litian Liu, / Lilin Tian, / Zhijian Li, et al. | 2000
- 130
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Characterization of MOS structure inversion and accumulation layer by approximate solution of Schrodinger equationYutao Ma, / Litian Liu, / Lilin Tian, / Zhiping Yu, / Zhijian Li, et al. | 2000
- 130
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Characterization of MOS Structure Inversion and Accumulation Layer by Approximation Solution of Schrodinger EquationMa, Y. / Liu, L. / Tian, L. / Yu, Z. / Li, Z. / Institute of Electrical and Electronics Engineers / University of Hong Kong et al. | 2000
- 134
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A single QWL SPICE model based on three-level rate equationsLifeng Chen, / Lilin Lian, et al. | 2000
- 138
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Study on the characteristics for deep-sub-micron grooved-gate PMOSFETHongxia Ren, / Hao Yue, et al. | 2000
- 142
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An improved behavioral IGBT model and its characterization toolMin Zhang, / Courtay, A. / Zhilian Yang, et al. | 2000
- 146
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A new theoretical treatment for the computation of optical-absorption coefficient in inhomogeneous semiconductor materialJianxin Zhu, / Ruimin Shen, et al. | 2000
- ii
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Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)| 2000