Self-Consistent Modeling of B or N Substitution Doped Bottom Gated Graphene FET With Nonzero Bandgap (English)
- New search for: Chandrasekar, L.
- Further information on Chandrasekar, L.:
- https://orcid.org/0000-0001-7305-5748
- New search for: Pradhan, K. P.
- Further information on Pradhan, K. P.:
- https://orcid.org/0000-0002-7313-294X
- New search for: Chandrasekar, L.
- Further information on Chandrasekar, L.:
- https://orcid.org/0000-0001-7305-5748
- New search for: Pradhan, K. P.
- Further information on Pradhan, K. P.:
- https://orcid.org/0000-0002-7313-294X
In:
IEEE Transactions on Electron Devices
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68
, 7
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3658-3664
;
2021
- Article (Journal) / Electronic Resource
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Title:Self-Consistent Modeling of B or N Substitution Doped Bottom Gated Graphene FET With Nonzero Bandgap
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Contributors:Chandrasekar, L. ( author ) / Pradhan, K. P. ( author )
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Published in:IEEE Transactions on Electron Devices ; 68, 7 ; 3658-3664
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Publisher:
- New search for: IEEE
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Publication date:2021-07-01
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Size:1149822 byte
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 68, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3133
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Table of contents| 2021
- 3138
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Foreword Special Issue on Low-Temperature Processing of Electronic Materials for Cutting Edge DevicesBerger, Paul R. / Hussain, Muhammad Mustafa / Iacopi, Francesca / Schulze, Jorg / Ye, Peide / Rachmady, Willy / Wen, Huang-Chun / Krishnan, Siddharth et al. | 2021
- 3142
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A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential IntegrationFenouillet-Beranger, C. / Brunet, L. / Batude, P. / Brevard, L. / Garros, X. / Casse, M. / Lacord, J. / Sklenard, B. / Acosta-Alba, P. / Kerdiles, S. et al. | 2021
- 3149
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Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and OptoelectronicsCaimi, Daniele / Tiwari, Preksha / Sousa, Marilyne / Moselund, Kirsten E. / Zota, Cezar B. et al. | 2021
- 3157
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RF Performance of Devices Processed in Low-Temperature Sequential IntegrationMota Frutuoso, T. / Sideris, P. / Lugo-Alvarez, J. / Garros, X. / Brunet, L. / Fenouille-Beranger, C. / Batude, P. / Theodorou, C. / Ferrari, P. / Gaillard, F. et al. | 2021
- 3163
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Compact Multilayer Bandpass Filter Using Low-Temperature Additively Manufacturing SolutionLi, Mengze / Yang, Yang / Iacopi, Francesca / Yamada, Minoru / Nulman, Jaim et al. | 2021
- 3170
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Low-Temperature Processing of Electronic Materials Using Uniform Microwave FieldsHubbard, Robert L. et al. | 2021
- 3176
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Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line ProcessHur, Jae / Luo, Yuan-Chun / Tasneem, Nujhat / Khan, Asif Islam / Yu, Shimeng et al. | 2021
- 3181
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Flexible Room Temperature Ammonia Gas Sensor Based on Low-Temperature Tuning of Functional Groups in GraphemeSett, Avik / Majumder, Santanab / Bhattacharyya, Tarun Kanti et al. | 2021
- 3189
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Laser-Induced Graphene Printed Wearable Flexible Antenna-Based Strain Sensor for Wireless Human Motion MonitoringSindhu, Battina / Kothuru, Avinash / Sahatiya, Parikshit / Goel, Sanket / Nandi, Sourav et al. | 2021
- 3195
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BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of Ferroelectric PolarizationSi, Mengwei / Murray, Anna / Lin, Zehao / Andler, Joseph / Li, Junkang / Noh, Jinhyun / Alajlouni, Sami / Niu, Chang / Lyu, Xiao / Zheng, Dongqi et al. | 2021
- 3200
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Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part IFu, Houqiang / Fu, Kai / Chowdhury, Srabanti / Palacios, Tomas / Zhao, Yuji et al. | 2021
- 3212
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Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part IIFu, Houqiang / Fu, Kai / Chowdhury, Srabanti / Palacios, Tomas / Zhao, Yuji et al. | 2021
- 3223
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Planar Gradient-Meander Line Microwave Inductor and Designing a 10-MHz–67-GHz Stopband Inductor for Ultrawideband ApplicationsLi, Zhongmao / Liu, Pengzhan / Fu, Wen / Qiu, Xin / Ye, Tianchun et al. | 2021
- 3230
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Layout-Induced Strain Study for RF Performance Improvement of 22-nm UTBB FDSOI PFETSloyan, Karen / Ravaux, Florent / Zhao, Zhixing / Kleimaier, Dominik / Utess, Dirk / Lehmann, Steffen / Andee, Yogadissen / Hoentschel, Jan / Ghaferi, Amal Al / Saadat, Irfan et al. | 2021
- 3238
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Efficiency Enhancement of Low-Cost Heterojunction Solar Cell by the Incorporation of Highly Conducting rGO Into ZnO NanostructureNarzary, Rewrewa / Phukan, Palash / Sahu, Partha Pratim et al. | 2021
- 3246
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Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFETWu, Zhicheng / Franco, Jacopo / Truijen, Brecht / Roussel, Philippe / Kaczer, Ben / Linten, Dimitri / Groeseneken, Guido et al. | 2021
- 3254
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OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement SetupSozzi, Giovanna / Sapienza, Sergio / Nipoti, Roberta / Chiorboli, Giovanni et al. | 2021
- 3261
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Anomalous GIDL Effect With Back Bias in FinFET: Physical Insights and Compact ModelingDabhi, Chetan Kumar / Roy, Ananda S. / Yang, Lucy / Chauhan, Yogesh Singh et al. | 2021
- 3268
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Device Parameter-Based Analytical Modeling of Power Supply Induced Jitter in CMOS InvertersArora, Puneet / Tripathi, Jai Narayan / Shrimali, Hitesh et al. | 2021
- 3276
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Influence of Within-Die Transistor Characteristics Variation on FINFET Circuit DelayPidin, Sergey et al. | 2021
- 3283
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Thermal-Assisted UV-Photon Irradiation to Improve Crystallization and Luminescence Efficiency of ZnOLiu, Wei / Li, Zhuxin / Xing, Cheng / Wang, Ru / Zhu, Yizhi / Shi, Zengliang / Yan, Yinzhou / Xu, Chunxiang et al. | 2021
- 3290
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Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTsGu, Yitian / Wang, Yangqian / Chen, Jiaxiang / Chen, Baile / Wang, Maojun / Zou, Xinbo et al. | 2021
- 3296
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AlN/GaN Superlattice Channel HEMTs on Silicon SubstrateLiu, Shuang / Zhang, Weihang / Zhang, Jincheng / Song, Xiufeng / Wu, Yinhe / Chen, Dazheng / Xu, Shengrui / Zhao, Shenglei / Hao, Yue et al. | 2021
- 3302
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Modeling of Bias-Dependent Effective Velocity and Its Impact on Saturation Transconductance in AlGaN/GaN HEMTsPampori, Ahtisham Ul Haq / Ahsan, Sheikh Aamir / Dangi, Raghvendra / Goyal, Umakant / Tomar, Sanjay Kumar / Mishra, Meena / Chauhan, Yogesh Singh et al. | 2021
- 3308
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AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain LinearityLu, Hao / Hou, Bin / Yang, Ling / Niu, Xuerui / Si, Zeyan / Zhang, Meng / Wu, Mei / Mi, Minhan / Zhu, Qing / Cheng, Kai et al. | 2021
- 3314
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Improvement of β-Ga2O3 MIS-SBD Interface Using Al-Reacted Interfacial LayerHe, Minghao / Cheng, Wei-Chih / Zeng, Fanming / Qiao, Zepeng / Chien, Yu-Chieh / Jiang, Yang / Li, Wenmao / Jiang, Lingli / Wang, Qing / Ang, Kah-Wee et al. | 2021
- 3320
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Fabrication and Characterization of Flexible AlGaN/GaN HEMTs on Kapton TapeHsu, Keng-Li / Wu, Meng-Chyi et al. | 2021
- 3325
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Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTsCioni, Marcello / Zagni, Nicolo / Selmi, Luca / Meneghesso, Gaudenzio / Meneghini, Matteo / Zanoni, Enrico / Chini, Alessandro et al. | 2021
- 3333
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Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate OxideCheng, Junao / Rahman, Mohammad Wahidur / Xie, Andy / Xue, Hao / Sohel, Shahadat Hasan / Beam, Edward / Lee, Cathy / Yang, Hao / Wang, Caiyu / Cao, Yu et al. | 2021
- 3339
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Analysis and Compact Modeling of Fast Detrapping From Bandgap-Engineered Tunneling Oxide in 3-D NAND Flash MemoriesKim, Minsoo / Shin, Hyungcheol et al. | 2021
- 3346
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Fully Unsupervised Spike-Rate-Dependent Plasticity Learning With Oxide- Based Memory DevicesKumar, Manoj / Bezugam, Sai Sukruth / Khan, Sufyan / Suri, Manan et al. | 2021
- 3353
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Physics-Based Stochastic Three-Dimensional Modeling for Metal–Oxide Resistive Random Access MemoryChen, Siyuan et al. | 2021
- 3359
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High-Mobility, Low-Voltage Programmable/Erasable Ferroelectric Polymer Transistor Nonvolatile Memory Based on a P(VDF-TrFE)/PMMA Bilayer Gate InsulatorXu, Meili / Qi, Weihao / Li, Shizhang / Wang, Wei et al. | 2021
- 3365
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Novel Method Enabling Forward and Backward Propagations in NAND Flash Memory for On-Chip LearningLee, Sung-Tae / Yeom, Gyuho / Yoo, Honam / Kim, Hyeong-Su / Lim, Suhwan / Bae, Jong-Ho / Park, Byung-Gook / Lee, Jong-Ho et al. | 2021
- 3371
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Effect of Femtosecond Laser Postannealing on a-IGZO Thin-Film TransistorsLee, Jae-Yun / Shan, Fei / Kim, Han-Sang / Kim, Sung-Jin et al. | 2021
- 3379
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Hydrogenation of Mg-Doped InGaZnO Thin-Film Transistors for Enhanced Electrical Performance and StabilityAbliz, Ablat et al. | 2021
- 3384
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Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic CapacitancesLime, Francois / Cerdeira, Antonio / Estrada, Magali / Pashkovich, Andrei / Iniguez, Benjamin et al. | 2021
- 3390
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Ultrathin Mg0.05Sn0.95Ox-Based Thin-Film Transistor by Mist Chemical Vapor DepositionLiu, Han-Yin / Chen, Wei-Ting / Hsu, Pei-Huang et al. | 2021
- 3396
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Compensating Nonuniform OLED Pixel Brightness in a Vertical Blanking Interval by Learning TFT CharacteristicsKoh, Jaihyun / Kang, Kyeongsoo / Shin, Chaehun / Lee, Soo-Yeon / Yoon, Sungroh et al. | 2021
- 3403
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Differential Signal Acquisition Using TFT Light-Sensing Pixel ArrayTai, Ya-Hsiang / Tu, Cheng-Che / Huang, Ping-Ju et al. | 2021
- 3411
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Stable and Printable Direct X-Ray Detectors Based on Micropyramid ω-Bi2O3 With Low Detection LimitMao, Longmei / Li, Yi / Yu, Longxin / Li, Xifeng / Zhang, Jianhua et al. | 2021
- 3417
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Enhanced Photo Sensing and Lowered Power Consumption in Concentric MIS Devices by Monitoring Outer Ring Open-Circuit Voltage With Biased Inner GateHuang, Chen-Yun / Hwu, Jenn-Gwo et al. | 2021
- 3424
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Stable Blue Fluorescent Organic Light-Emitting Diodes Based on an Inorganically Doped HomojunctionCao, X. A. / Liu, N. / Shelhammer, D. / Wang, H. J. / Zhou, Y. M. et al. | 2021
- 3429
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Switching Stability Analysis of Paralleled RC-IGBTs With Snapback EffectDiaz Reigosa, P. / Rahimo, M. / Minamisawa, R. / Iannuzzo, F. et al. | 2021
- 3435
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16 × 4 Linear Solar-Blind UV Photoconductive Detector Array Based on β-Ga2O3 FilmZhi, Yu-Song / Liu, Zeng / Zhang, Shao-Hui / Li, Shan / Yan, Zu-Yong / Li, Pei-Gang / Tang, Wei-Hua et al. | 2021
- 3439
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High-Performance Pentacene/ZnO UV-Visible Photodetector Using Solution MethodSrivastava, Anshika / Jit, Satyabrata / Tripathi, Shweta et al. | 2021
- 3446
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Theoretical Study of Charge Carrier Lifetime and Recombination on the Performance of Eco-Friendly Perovskite Solar CellShukla, Raghvendra / Kumar, Rashmi Ranjan / Pandey, Saurabh Kumar et al. | 2021
- 3453
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An Improved Fourier-Series-Based IGBT Model by Mitigating the Effect of Gibbs Phenomenon at Turn onYang, Xin / Ding, Yifei / Wang, Jun / Liu, Guoyou / Palmer, Patrick R. et al. | 2021
- 3460
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Design of a Fan-Out Panel-Level SiC MOSFET Power Module Using Ant Colony Optimization-Back Propagation Neural NetworkQian, Yichen / Hou, Fengze / Fan, Jiajie / Lv, Quanya / Fan, Xuejun / Zhang, Guoqi et al. | 2021
- 3468
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Simulation Analysis of Increase in ON-State Voltage of 4H-SiC Bipolar Devices Due to Single-Shockley-Stacking FaultsAsada, Satoshi / Miyazawa, Tetsuya / Tsuchida, Hidekazu et al. | 2021
- 3475
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An Adaptive Electrothermal Model for Estimating the Junction Temperature of Power DeviceHu, Zhen / Zhou, Yan / Zhang, Tengfei / Jiang, Yongjiang et al. | 2021
- 3483
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New Failure Mechanism Induced by Current Limit for Superjunction MOSFET Under Single-Pulse UIS StressTong, Xin / Liu, Siyang / Sun, Weifeng / Wu, Jianhui / Yang, Zhuo / Zhu, Yuanzheng / Ni, Lihua et al. | 2021
- 3490
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Low ON-Resistance (2.5 mΩ · cm2) Vertical-Type 2-D Hole Gas Diamond MOSFETs With Trench Gate StructureTsunoda, Jun / Iwataki, Masayuki / Horikawa, Kiyotaka / Amano, Shotaro / Ota, Kosuke / Hiraiwa, Atsushi / Kawarada, Hiroshi et al. | 2021
- 3497
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Optimization of 1700-V 4H-SiC Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical RealizationBaker, G. W. C. / Chan, C. / Renz, A. B. / Qi, Y. / Dai, T. / Li, F. / Shah, V. A. / Mawby, P. A. / Antoniou, M. / Gammon, P. M. et al. | 2021
- 3505
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Electric-Field-Dependence Mechanism for Cosmic Ray Failure in Power Semiconductor DevicesOda, Tetsuo / Arai, Taiga / Furukawa, Tomoyasu / Shiraishi, Masaki / Sasajima, Yasushi et al. | 2021
- 3513
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Interconnect Technology/System Co-Optimization for Low-Power VLSI Applications Using Ballistic MaterialsPei, Zhenlin / Dutta, Arin / Shang, Liuting / Jung, Sungyong / Pan, Chenyun et al. | 2021
- 3520
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Electrical Characteristics and Reliability of Wafer-on-Wafer (WOW) Bumpless Through-Silicon ViaTsai, Yi-Chieh / Lee, Chia-Hsuan / Chang, Hsin-Chi / Liu, Jui-Han / Hu, Han-Wen / Ito, Hiroyuki / Kim, Young Suk / Ohba, Takayuki / Chen, Kuan-Neng et al. | 2021
- 3526
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Guidelines for Ferroelectric-Semiconductor Tunnel Junction Optimization by Band Structure EngineeringChang, Pengying / Du, Gang / Kang, Jinfeng / Liu, Xiaoyan et al. | 2021
- 3532
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Temperature-Dependent Low-Frequency Noise Analysis of ZnO Nanowire Field-Effect TransistorsXue, Hao / Shao, Ye / Yoon, Jongwon / Lee, Takhee / Lu, Wu et al. | 2021
- 3537
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Experimental Investigation of Thermal Actuation Crosstalk in Phase-Change RF Switches Using Transient Thermoreflectance ImagingSingh, Tejinder / Mansour, Raafat R. et al. | 2021
- 3545
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Dielectric-Modulated Bulk-Planar Junctionless Field-Effect Transistor for Biosensing ApplicationsSingh, Deepika / Patil, Ganesh C. et al. | 2021
- 3552
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Response Comparison of Resistor- and Si FET-Type Gas Sensors on the Same SubstrateJung, Gyuweon / Hong, Seongbin / Jeong, Yujeong / Shin, Wonjun / Park, Jinwoo / Kim, Donghee / Bae, Jong-Ho / Park, Byung-Gook / Lee, Jong-Ho et al. | 2021
- 3558
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Ultrathin Flexible Inorganic Device for Long-Term Monitoring of Light and TemperatureWang, Zhouheng / Li, Haicheng / Chen, Ying / Cao, Yu / Ma, Yinji / Feng, Xue et al. | 2021
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A High-Power Ka-Band Radial Transit Time Oscillator With Over-Sized ExtractorWang, Haitao / Zhu, Danni / Yuan, Yuzhang / Meng, Jin / Cui, Yancheng / Yang, Chaochao et al. | 2021
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Intelligent Forward-Wave Amplifier Design With Deep Learning and Genetic AlgorithmLiu, Kegang / Xue, Qianzhong / Zhao, Ding / Feng, Jinjun et al. | 2021
- 3576
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Impact of Nonuniform Thermionic Emission on the Transition Behavior Between Temperature-and Space-Charge-Limited EmissionChen, Dongzheng / Jacobs, Ryan / Morgan, Dane / Booske, John et al. | 2021
- 3582
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Implementation of Trigger Unit for Generation of High-Current-Density Electron BeamAbhishek, Anand / Kumar, Niraj / Pal, Udit Narayan / Singh, Bhim / Akbar, S. A. et al. | 2021
- 3588
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High-Power Backward-Wave Oscillator Using Folded Waveguide With Distributed Power Extraction Operating at an Exceptional PointMealy, Tarek / Abdelshafy, Ahmed F. / Capolino, Filippo et al. | 2021
- 3596
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Experiment for Evaluating a K-Band Space TWT Electron BeamWei, Yu-Xiang / Liu, Shu-Qing / Huang, Ming-Guang / Li, Xian-Xia / Liu, Jin-Yue / Du, Chao-Hai / Liu, Pu-Kun et al. | 2021
- 3604
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Simulation of Space-Charge-Limited Current for Hot Electrons With Initial Velocity in a Vacuum DiodeHuang, Jin Bo / Yao, Ruo He / Zhao, Pan / Zhu, Ying Bin et al. | 2021
- 3611
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A Method of Tuning Frequency in S-Band Continuous-Wave MagnetronHu, Kongyi / Tang, Wanchun / Liu, Jianlong / Zeng, Baoqing / Jiang, Yan / He, Xi / Feng, Linping et al. | 2021
- 3617
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Numerical Analysis of Resonant Multipolar Instabilities in High Power KlystronsCai, Jinchi / Syratchev, Igor / Burt, Graeme et al. | 2021
- 3622
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Performance Projection of 2-D Material-Based CMOS Inverters for Sub-10-nm Channel LengthRawat, Akhilesh / Gupta, Avinash Kumar / Rawat, Brajesh et al. | 2021
- 3630
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Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High TemperaturesSilva, Vanessa C. P. / Perina, Welder F. / Martino, Joao A. / Simoen, Eddy / Veloso, Anabela / Agopian, Paula G. D. et al. | 2021
- 3636
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Frequency Response of Metal-Oxide MemristorsManouras, Vasileios / Stathopoulos, Spyros / Garlapati, Suresh Kumar / Serb, Alex / Prodromakis, Themis et al. | 2021
- 3643
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Benchmarking Silicon FinFET With the Carbon Nanotube and 2D-FETs for Advanced Node CMOS Logic ApplicationDas, Uttam Kumar / Hussain, Muhammad M. et al. | 2021
- 3649
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Performance Optimization of Monolayer 1T/1T’-2H MoX2 Lateral Heterojunction TransistorsYin, Demin / Yoon, Youngki et al. | 2021
- 3658
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Self-Consistent Modeling of B or N Substitution Doped Bottom Gated Graphene FET With Nonzero BandgapChandrasekar, L. / Pradhan, K. P. et al. | 2021
- 3665
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A Dynamic Current Model for MFIS Negative Capacitance TransistorsHuang, Xiaoqing / Chen, Xuhui / Li, Longfei / Zhong, Haotian / Jiao, Yanxin / Lin, Xinnan / Huang, Qianqian / Zhang, Lining / Huang, Ru et al. | 2021
- 3672
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Graphene Quantum Hall Effect Devices for AC and DC Electrical MetrologyKruskopf, Mattias / Bauer, Stephan / Pimsut, Yaowaret / Chatterjee, Atasi / Patel, Dinesh K. / Rigosi, Albert F. / Elmquist, Randolph E. / Pierz, Klaus / Pesel, Eckart / Gotz, Martin et al. | 2021
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Ternary Logic Circuit Based on Negative Capacitance Field-Effect Transistors and Its Variation ImmunityHuang, Weixing / Zhu, Huilong / Zhang, Yongkui / Wu, Zhenhua / Huo, Qiang / Xiao, Zhongrui / Jia, Kunpeng et al. | 2021
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On the Operation Modes of Dual-Gate Reconfigurable Nanowire TransistorsSun, Bin / Richstein, Benjamin / Liebisch, Patrick / Frahm, Thorben / Scholz, Stefan / Trommer, Jens / Mikolajick, Thomas / Knoch, Joachim et al. | 2021
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Experimental Demonstration of Angle-Dependent GMR Effect in Py/WSe₂/Co Spin Valve StructureCao, Yuan / Li, Shen / Lv, Chen / Lin, Xiaoyang / Wang, Xinhe / Du, Junli / Zhao, Weisheng et al. | 2021
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Physical Thickness 1.5-nm HfZrO Negative Capacitance NMOSFETsXu, Qiuxia / Chen, Kai / Xu, Gaobo / Xiang, Jinjuan / Gao, Jianfeng / Wang, Xiaolei / Li, Junjie / He, Xiaobin / Li, Junfeng / Wang, Wenwu et al. | 2021
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A CRP-Space-Extended RRAM PUF With In-Cell Zero-Overhead Salicide-Blocked ContactZhao, Xiaojin / Xu, Tingting / Xie, Chunwei / Pan, Xiaofang / He, Wei / Zhang, Feng et al. | 2021
- 3706
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Data Sanitization of SRAM by Thermal DistortionHan, Joon-Kyu / Han, Seong-Joo / Yu, Ji-Man / Choi, Yang-Kyu et al. | 2021
- 3711
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Simulation Study of Single-Event Burnout in 1.5-kV 4H-SiC JTE TerminationYu, Cheng-Hao / Wang, Ying / Bao, Meng-Tian / Li, Xing-Ji / Yang, Jian-Qun / Tang, Zhao-Huan et al. | 2021
- 3716
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Investigation of Endurance Behavior on HfZrO-Based Charge-Trapping FinFET Devices by Random Telegraph Noise and Subthreshold Swing TechniquesGong, Tiancheng / Wang, Yuhao / Yu, Haoran / Xu, Yannan / Jiang, Pengfei / Yuan, Peng / Wang, Yuan / Chen, Yuting / Ding, Yaxin / Yang, Yang et al. | 2021
- 3720
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IEEE Transactions on Semiconductor Manufacturing CALL FOR PAPERS for Special Issue on Process-Level Machine Learning Applications in Semiconductor Manufacturing| 2021
- 3721
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Spintronics-Devices and Circuits| 2021
- 3723
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2021 IEEE EDS Early Career Award| 2021
- 3724
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2021 EDS EDUCATION AWARD CALL FOR NOMINATIONS| 2021
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[Front cover]| 2021
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IEEE Transactions on Electron Devices publication information| 2021
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IEEE Transactions on Electron Devices information for authors| 2021