Comment on “An Analytical Model for Tunnel Barrier Modulation in Triple Metal Double Gate TFET” (English)
- New search for: Ananda, A.
- New search for: Chauhan, S. S.
- Further information on Chauhan, S. S.:
- https://orcid.org/0000-0003-4120-8054
- New search for: Prakash, A.
- Further information on Prakash, A.:
- https://orcid.org/0000-0003-0963-4651
- New search for: Ananda, A.
- New search for: Chauhan, S. S.
- Further information on Chauhan, S. S.:
- https://orcid.org/0000-0003-4120-8054
- New search for: Prakash, A.
- Further information on Prakash, A.:
- https://orcid.org/0000-0003-0963-4651
In:
IEEE Transactions on Electron Devices
;
66
, 2
;
1123-1124
;
2019
- Article (Journal) / Electronic Resource
-
Title:Comment on “An Analytical Model for Tunnel Barrier Modulation in Triple Metal Double Gate TFET”
-
Contributors:
-
Published in:IEEE Transactions on Electron Devices ; 66, 2 ; 1123-1124
-
Publisher:
- New search for: IEEE
-
Publication date:2019-02-01
-
Size:485411 byte
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Electronic Resource
-
Language:English
-
Source:
Table of contents – Volume 66, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 839
-
A SPICE Compatible Compact Model for Hot-Carrier Degradation in MOSFETs Under Different Experimental ConditionsSharma, Uma / Mahapatra, Souvik et al. | 2019
- 847
-
Investigation of the Effects and the Random-Dopant-Induced Variations of Source/Drain Extension of 7-nm Strained SiGe n-Type FinFETsLiu, Keng-Ming / Chen, En-Ching et al. | 2019
- 855
-
An Analytical Model for the Effective Drive Current in CMOS CircuitsPidin, Sergey et al. | 2019
- 861
-
Back-Gate Bias and Substrate Doping Influenced Substrate Effect in UTBB FD-SOI MOS Transistors: Analysis and Optimization GuidelinesBhoir, Mandar S. / Chauhan, Yogesh Singh / Mohapatra, Nihar R. et al. | 2019
- 868
-
An Impact Ionization MOSFET With Reduced Breakdown Voltage Based on Back-Gate MisalignmentMusalgaonkar, Gaurav / Sahay, Shubham / Saxena, Raghvendra Sahai / Kumar, Mamidala Jagadesh et al. | 2019
- 876
-
Carrier Transport Mechanisms Underlying the Bidirectional ${V}_{\mathrm{{TH}}}$ Shift in p-GaN Gate HEMTs Under Forward Gate StressShi, Yuanyuan / Zhou, Qi / Cheng, Qian / Wei, Pengcheng / Zhu, Liyang / Wei, Dong / Zhang, Anbang / Chen, Wanjun / Zhang, Bo et al. | 2019
- 883
-
Influence of GaN- and Si3N4-Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge TerminationAcurio, Eliana / Crupi, Felice / Ronchi, Nicolo / De Jaeger, Brice / Bakeroot, Benoit / Decoutere, Stefaan / Trojman, Lionel et al. | 2019
- 890
-
Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTsSun, Wenyuan / Joh, Jungwoo / Krishnan, Srikanth / Pendharkar, Sameer / Jackson, Christine M. / Ringel, Steven A. / Arehart, Aaron R. et al. | 2019
- 896
-
Design of Transistors Using High-Permittivity MaterialsXia, Zhanbo / Wang, Caiyu / Kalarickal, Nidhin Kurian / Stemmer, Susanne / Rajan, Siddharth et al. | 2019
- 901
-
Thermophotovoltaic Energy Conversion With GaSb Lattice-Matched GaxIn1−xAsySb1−y DiodesZhang, Xiao-Long / Huang, A-Bao / Lou, Yi-Yi / Li, Xin / Cui, Min / Wang, Yu et al. | 2019
- 908
-
Assessment of Self-Heating Effects Under Lateral Scaling of GaN HEMTsLatorre-Rey, Alvaro D. / Merrill, Ky / Albrecht, John D. / Saraniti, Marco et al. | 2019
- 917
-
Si-Based FET-Type Synaptic Device With Short-Term and Long-Term Plasticity Using High- $\kappa$ Gate-StackSeo, Young-Tak / Lee, Myoung-Sun / Kim, Chul-Heung / Woo, Sung Yun / Bae, Jong-Ho / Park, Byung-Gook / Lee, Jong-Ho et al. | 2019
- 924
-
A Self-Rectifying Resistive Switching Device Based on HfO2/TaO $_{{x}}$ Bilayer StructureMa, Haili / Zhang, Xumeng / Wu, Facai / Luo, Qing / Gong, Tiancheng / Yuan, Peng / Xu, Xiaoxin / Liu, Yu / Zhao, Shengjie / Zhang, Kaiping et al. | 2019
- 929
-
SRAMs and DRAMs With Separate Read–Write Ports Augmented by Phase Transition MaterialsShen, Zhesheng / Srinivasa, Srivatsa / Aziz, Ahmedullah / Datta, Suman / Narayanan, Vijaykrishnan / Gupta, Sumeet Kumar et al. | 2019
- 938
-
Self-Organized Al Nanotip Electrodes for Achieving Ultralow-Power and Error-Free MemoryDuran Retamal, Jose Ramon / Ho, Chin-Hsiang / Tsai, Kun-Tong / Ke, Jr-jian / He, Jr-Hau et al. | 2019
- 944
-
Influence of Size and Shape on the Performance of VCMA-Based MTJsMiriyala, Venkata Pavan Kumar / Fong, Xuanyao / Liang, Gengchiau et al. | 2019
- 950
-
Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel DisplaysLi, Yunpeng / Zhang, Jiawei / Yang, Jin / Yuan, Yvzhuo / Hu, Zhenjia / Lin, Zhaojun / Song, Aimin / Xin, Qian et al. | 2019
- 957
-
Electrode-Adaptive Thin-Film Integrated Logic CircuitsLee, Byeong Hyeon / Cho, Kyung-Sang / Sohn, Ahrum / Hwang, Sungwoo / Lee, Sang Yeol et al. | 2019
- 963
-
Electroluminescent Cooling in III–V Intracavity Diodes: Practical RequirementsSadi, Toufik / Radevici, Ivan / Kivisaari, Pyry / Oksanen, Jani et al. | 2019
- 969
-
Quarter Video Graphics Array Digital Pixel Image Sensing With a Linear and Wide- Dynamic-Range Response by Using Pixel-Wise 3-D IntegrationGoto, Masahide / Honda, Yuki / Watabe, Toshihisa / Hagiwara, Kei / Nanba, Masakazu / Iguchi, Yoshinori / Saraya, Takuya / Kobayashi, Masaharu / Higurashi, Eiji / Toshiyoshi, Hiroshi et al. | 2019
- 976
-
High-Efficiency Deep-Ultraviolet Light-Emitting Diodes With Efficient Carrier Confinement and High Light ExtractionChang, Jih-Yuan / Liou, Bo-Ting / Huang, Man-Fang / Shih, Ya-Hsuan / Chen, Fang-Ming / Kuo, Yen-Kuang et al. | 2019
- 983
-
Noise Characteristics of MgZnO-Based Metal–Semiconductor–Metal PhotodetectorLi, Zhaoling / Wang, Ping / Liu, Yan / Yang, Han / Guo, Xinlu / Yang, Yintang et al. | 2019
- 991
-
Turn-OFF Transient Analysis of Superjunction IGBTWang, Zhigang / Zhang, Hao / Kuo, James B. et al. | 2019
- 999
-
General Expression for Plasma Extraction Transit-Time Oscillations From Silicon-Bipolar Power Semiconductor DevicesSaito, Katsuaki / Wada, Takashi / Sasajima, Yasushi et al. | 2019
- 1006
-
Parameter Extraction and Power/Performance Analysis of Monolithic 3-D Inverter (M3INV)Ahn, Tae Jun / Perumal, Rakesh / Lim, Sung Kyu / Yu, Yun Seop et al. | 2019
- 1012
-
Comprehensive Investigation on Electrical Properties of nLDMOS and pLDMOS Under Mechanical StrainWu, Wangran / Wang, Yaohui / Yang, Guangan / Liu, Siyang / Zhu, Jing / Sun, Weifeng et al. | 2019
- 1018
-
A Novel Insulated Gate Triggered Thyristor With Schottky Barrier for Improved Repetitive Pulse Life and High-di/dt CharacteristicsLiu, Chao / Chen, Wanjun / Shi, Yijun / Tao, Hong / Zhou, Qijun / Zuo, Huiling / Qiao, Bin / Xia, Yun / Xiao, Ziyan / Gao, Wuhao et al. | 2019
- 1026
-
Impact of Termination Region on Switching Loss for SiC MOSFETLi, Xuan / Tan, Ben / Huang, Alex Q. / Zhang, Bo / Zhang, Yumeng / Deng, Xiaochuan / Li, Zhaoji / She, Xu / Wang, Fangzhou / Huang, Xing et al. | 2019
- 1032
-
Nonlinear Electrothermal Model for Investigating Transient Temperature Responses of a Through-Silicon Via Array Applied With Gaussian Pulses in 3-D ICChai, Jingrui / Dong, Gang / Yang, Yintang et al. | 2019
- 1041
-
Roll-to-Roll Fabrication of PEDOT:PSS Stripes Using Slot-Die Head With $\mu$ -Tips for AMOLEDsKim, Gieun / Lee, Jinyoung / Shin, Dong-Kyun / Park, Jongwoon et al. | 2019
- 1050
-
Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise BehaviorHe, Liang / Zhao, Pan / Liu, Jiahao / Su, Yahui / Chen, Hua / Jia, Xiaofei / Arimura, Hiroaki / Mitard, Jerome / Witters, Liesbet / Horiguchi, Naoto et al. | 2019
- 1057
-
Effects of Postannealing on the Characteristics and Reliability of Polyfluorene Organic Light-Emitting DiodesShi, W. X. / Liu, N. / Zhou, Y. M. / Cao, X. A. et al. | 2019
- 1063
-
An Efficient Room Temperature Ethanol Sensor Device Based on p-n Homojunction of TiO2 NanostructuresBhowmik, B. / Dutta, K. / Bhattacharyya, P. et al. | 2019
- 1069
-
On-Chip Thermionic Electron Emitter Arrays Based on Horizontally Aligned Single-Walled Carbon NanotubesWang, Yuwei / Fang, Li / Xiang, Li / Wu, Gongtao / Zeng, Yi / Chen, Qing / Wei, Xianlong et al. | 2019
- 1075
-
Scaling Procedures and Post-Optimization for the Design of High-Efficiency KlystronsCai, Jinchi / Syratchev, Igor / Lui, Zening et al. | 2019
- 1082
-
Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum OxidesCheng, Chun-Hu / Fan, Chia-Chi / Liu, Chien / Hsu, Hsiao-Hsuan / Chen, Hsuan-Han / Hsu, Chih-Chieh / Wang, Shih-An / Chang, Chun-Yen et al. | 2019
- 1087
-
A Numerical Simulation of C3N Nanoribbon-Based Field-Effect TransistorsZhang, Tiancheng / Zeng, Hui / Ding, Dazhi / Chen, R. S. et al. | 2019
- 1092
-
A Hammerstein–Wiener Model for Single-Electron TransistorsPes, Beatriz dos Santos / Oroski, Elder / Guimaraes, Janaina Goncalves / Bonfim, Marlio J. C. et al. | 2019
- 1100
-
Analysis on Performance of Ferroelectric NC-FETs Based on Real-Space Gibbs-Free Energy With Atomic Channel StructureZhang, Xiaoyi / Gong, Xiao / Liang, Gengchiau et al. | 2019
- 1107
-
Effects of Trapped Charges in Gate Dielectric and High- ${k}$ Encapsulation on Performance of MoS2 TransistorXu, Jing-Ping / Xie, Wen-Xuan / Liu, Lu / Zhao, Xinyuan / Song, Xingjuan / Lai, Pui-To / Tang, Wing-Man et al. | 2019
- 1113
-
Damage-Free ALD Blocking Oxide Layer on Functionalized Graphene Nanosheets as Nonvolatile MemoriesChang, Kai-Ping / Wang, Jer-Chyi / Tai, Han-Hsiang / Yeh, Wen-Kuan / Li, Kai-Shin / Lai, Chao Sung et al. | 2019
- 1118
-
Research of Single-Event Burnout and Hardening of AlGaN/GaN-Based MISFETLuo, Xin / Wang, Ying / Hao, Yue / Li, Xing-ji / Liu, Chao-Ming / Fei, Xin-Xing / Yu, Cheng-Hao / Cao, Fei et al. | 2019
- 1123
-
Comment on “An Analytical Model for Tunnel Barrier Modulation in Triple Metal Double Gate TFET”Ananda, A. / Chauhan, S. S. / Prakash, A. et al. | 2019
- 1125
-
Author’s ReplyBagga, Navjeet / Sarkar, Subir Kumar et al. | 2019
- 1126
-
Erratum to “Reliability Improvement of GaN Devices on Free-Standing GaN Substrates” [Aug 18 3379-3387]Cheng, Xinhong et al. | 2019
- 1126
-
Erratum to “Reliability Improvement of GaN Devices on Free-Standing GaN Substrates”Zhang, Dongliang / Cheng, Xinhong / Ng, Wai Tung / Shen, Lingyan / Zheng, Li / Wang, Qian / Qian, Ru / Gu, Ziyue / Wu, Dengpeng / Zhou, Wen et al. | 2019
- 1127
-
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices| 2019
- 1128
-
Introducing IEEE Collabratec| 2019
- C1
-
Table of contents| 2019
- C2
-
IEEE Transactions on Electron Devices publication information| 2019
- C3
-
IEEE Transactions on Electron Devices information for authors| 2019
- C4
-
Blank page| 2019