15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/=384 GHz and a 6-V BV/sub CEO/ (English)
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In:
IEEE Transactions on Electron Devices
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53
, 3
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559-561
;
2006
- Article (Journal) / Electronic Resource
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Title:15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/=384 GHz and a 6-V BV/sub CEO/
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Contributors:
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Published in:IEEE Transactions on Electron Devices ; 53, 3 ; 559-561
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Publisher:
- New search for: IEEE
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Publication date:2006-03-01
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Size:243327 byte
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 53, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 405
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EDITORIAL - Changes to the Editorial BoardVerret, D. et al. | 2006
- 405
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Changes to the Editorial BoardVerret, et al. | 2006
- 406
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Performance Improvement in Tensile-Strained In_0.5 Al_0.5 As/ In_x Ga_1-x As/ In_0.5 Al_0.5 As Metamorphic HEMTHsu, W.-C. / Huang, D.-H. / Lin, Y.-S. / Chen, Y.-J. / Huang, J.-C. / Wu, C.-L. et al. | 2006
- 406
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Compound Semiconductor Devices - Performance Improvement in Tensile-Strained In0.5Al0.5 As-InxGa1-xAs-In0.5Al0.5As Metamorphic HEMTHsu, W.-C. et al. | 2006
- 406
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Performance Improvement in Tensile-Strained$hbox In_0.5hbox Al_0.5hbox As/hbox In_xhbox Ga_1-xhbox As/hbox In_0.5hbox Al_0.5hbox As$Metamorphic HEMTHsu, W.-C. / Huang, D.-H. / Lin, Y.-S. / Chen, Y.-J. / Huang, J.-C. / Wu, C.-L. et al. | 2006
- 413
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Compound Semiconductor Devices - A Broadband and Scalable Model for On-Chip Inductors Incorporating Substrate and Conductor Loss EffectsGuo, J.-C. et al. | 2006
- 413
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A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effectsJyh-Chyurn Guo, / Teng-Yang Tan, et al. | 2006
- 422
-
Compound Semiconductor Devices - InAlN-GaN HEMTs: A First Insight Into Technological OptimizationKuzmik, J. et al. | 2006
- 422
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InAlN/GaN HEMTs: a first insight into technological optimizationKuzmik, J. / Kostopoulos, A. / Konstantinidis, G. / Carlin, J.-F. / Georgakilas, A. / Pogany, D. et al. | 2006
- 427
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White LED based on polyfluorene Co-polymers blend on plastic substrateHojin Lee, / Johnson, A.R. / Kanicki, J. et al. | 2006
- 427
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Optoelectronics, Displays, and Imaging - White LED Based on Polyfluorene Co-Polymers Blend on Plastic SubstrateLee, H. et al. | 2006
- 435
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High-resolution full-color LCD driven by OTFTs using novel passivation filmKawasaki, M. / Imazeki, S. / Ando, M. / Sekiguchi, Y. / Hirota, S. / Uemura, S. / Kamata, T. et al. | 2006
- 435
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Optoelectronics, Displays, and Imaging - High-Resolution Full-Color LCD Driven by OTFTs Using Novel Passivation FilmKawasaki, M. et al. | 2006
- 442
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Silicon Devices - Application of Junction Capacitance Measurements to the Characterization of Solar CellsRecart, F. et al. | 2006
- 442
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Application of junction capacitance measurements to the characterization of solar cellsRecart, F. / Cuevas, A. et al. | 2006
- 449
-
Fabrication and mobility characteristics of SiGe surface channel pMOSFETs with a HfO/sub 2//TiN gate stackWeber, O. / Damlencourt, J.-F. / Andrieu, F. / Ducroquet, F. / Ernst, T. / Hartmann, J.-M. / Papon, A.-M. / Renault, O. / Guillaumot, B. / Deleonibus, S. et al. | 2006
- 449
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Fabrication and mobility characteristics of SiGe surface channel pMOSFETs with a HfO2/TiN gate stackWeber, O. / Damlencourt, J.F. / Andrieu, F. / Ducroquet, F. / Ernst, T. / Hartmann, J.M. / Papon, A.M. / Renault, O. / Guillaumot, B. / Deleonibus, S. et al. | 2006
- 449
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Silicon Devices - Fabrication and Mobility Characteristics of SiGe Surface Channel pMOSFETs With a HfO2-TiN Gate StackWeber, O. et al. | 2006
- 457
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Silicon Devices - The Influence of Diffusion-Induced Dislocations on High Efficiency Silicon Solar CellsCousins, P.J. et al. | 2006
- 457
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The influence of diffusion-induced dislocations on high efficiency silicon solar cellsCousins, P.J. / Cotter, J.E. et al. | 2006
- 465
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A novel self-aligned highly reliable sidewall split-gate flash memoryCaleb Yu-Sheng Cho, / Ming-Jer Chen, / Chiou-Feng Chen, / Tuntasood, P. / Fan, D.-T. / Tseng-Yi Liu, et al. | 2006
- 465
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Silicon Devices - A Novel Self-Aligned Highly Reliable Sidewall Split-Gate Flash MemoryCho, C.Y.-S. et al. | 2006
- 474
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Silicon Devices - Analysis of Current Flow in Polycrystalline TFTsEccleston, W. et al. | 2006
- 474
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Analysis of current flow in polycrystalline TFTsEccleston, W. et al. | 2006
- 481
-
Silicon Devices - Characteristics of the Full CMOS SRAM Cell Using Body-Tied TG MOSFETs (Bulk FinFETs)Park, T.-S. et al. | 2006
- 481
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Characteristics of the full CMOS SRAM cell using body-tied TG MOSFETs (bulk FinFETs)Tai-Su Park, / Hye Jin Cho, / Jeong Dong Choe, / Sang Yeon Han, / Donggun Park, / Kinam Kim, / Yoon, E. / Jong-Ho Lee, et al. | 2006
- 488
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Silicon Devices - Effect of the Gap Size on the SSI Efficiency of Split-Gate Memory CellsPalestri, P. et al. | 2006
- 488
-
Effect of the gap size on the SSI efficiency of split-gate memory cellsPalestri, P. / Akil, N. / Stefanutti, W. / Slotboom, M. / Selmi, L. et al. | 2006
- 494
-
Silicon Devices - Level Shifter Embedded in Drive Circuits With Amorphous Silicon TFTsBae, B.S. et al. | 2006
- 494
-
Level shifter embedded in drive circuits with amorphous silicon TFTsByung Seong Bae, / Jae Won Choi, / Jae Hwan Oh, / Jang, J. et al. | 2006
- 499
-
Accurate modeling of the effects of fringing area interface traps on scanning capacitance microscopy measurementHong, Y.D. / Yew Tong Yeow, / Chim, W.K. / Jian Yan, / Kin Mun Wong, et al. | 2006
- 499
-
Silicon Devices - Accurate Modeling of the Effects of Fringing Area Interface Traps on Scanning Capacitance Microscopy MeasurementHong, Y.D. et al. | 2006
- 507
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A subthreshold surface potential model for short-channel MOSFET taking into account the varying depth of channel depletion layer due to source and drain junctionsBaishya, S. / Mallik, A. / Sarkar, C.K. et al. | 2006
- 508
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Silicon Devices - A Subthreshold Surface Potential Model for Short-Channel MOSFET Taking Into Account the Varying Depth of Channel Depletion Layer Due to Source and Drain JunctionsBaishya, S. et al. | 2006
- 515
-
Frequency and bias-dependent modeling of correlated base and collector current RF noise in SiGe HBTs using quasi-static equivalent circuitKejun Xia, / Guofu Niu, / Sheridan, D.C. / Sweeney, S.L. et al. | 2006
- 516
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Solid-State Device Phenomena - Frequency and Bias-Dependent Modeling of Correlated Base and Collector Current RF Noise in SiGe HBTs Using Quasi-Static Equivalent CircuitXia, K. et al. | 2006
- 523
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A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETsRaul Rengel, / Martin, M.J. / Gonzalez, T. / Mateos, J. / Pardo, D. / Dambrine, G. / Raskin, J.-P. / Danneville, F. et al. | 2006
- 524
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Solid-State Device Phenomena - A Microscopic Interpretation of the RF Noise Performance of Fabricated FDSOI MOSFETsRengel, R. et al. | 2006
- 533
-
Monte Carlo study of strained GermaniumNanoscale bulk pMOSFETsGhosh, B. / Xiao-Feng Fan, / Register, L.F. / Banerjee, S.K. et al. | 2006
- 534
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Solid-State Device Phenomena - Monte Carlo Study of Strained Germanium Nanoscale Bulk pMOSFETsGhosh, B. et al. | 2006
- 538
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Low-frequency noise in TaSiN/HfO/sub 2/ nMOSFETs and the effect of stress-relieved preoxide interfacial layerDevireddy, S.P. / Bigang Min, / Celik-Butler, Z. / Hsing-Huang Tseng, / Tobin, P.J. / Fang Wang, / Zlotnicka, A. et al. | 2006
- 539
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Solid-State Device Phenomena - Low-Frequency Noise in TaSiN-HfO2 nMOSFETs and the Effect of Stress-Relieved Preoxide Interfacial LayerDevireddy, S.P. et al. | 2006
- 545
-
110-GHz f/sub T/ silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppressionKham, M.N. / Mubarek, H.A.W.E. / Bonar, J.M. / Ashburn, P. / Ward, P. / Fiore, L. / Petralia, R. / Alemanni, C. / Messina, A. et al. | 2006
- 545
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110-GHz fT silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppressionKham, M.N. / Mubarek, H.A.W.E. / Bonar, J.M. / Ashburn, P. / Ward, P. / Fiore, L. / Petralia, R. / Alemanni, C. / Messina, A. et al. | 2006
- 546
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Solid-State Device Phenomena - 110-GHz fT Silicon Bipolar Transistors Implemented Using Fluorine Implantation for Boron Diffusion SuppressionKham, M.N. et al. | 2006
- 553
-
A novel filterless fluorescence detection sensor for DNA analysisMaruyama, Y. / Sawada, K. / Takao, H. / Ishida, M. et al. | 2006
- 554
-
Solid-State Sensors and Actuators - A Novel Filteriess Fluorescence Detection Sensor for DNA AnalysisMaruyama, Y. et al. | 2006
- 559
-
15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/=384 GHz and a 6-V BV/sub CEO/Liu, H.G. / Watkins, S.P. / Bolognesi, C.R. et al. | 2006
- 559
-
BRIEFS - 15-nm Base Type-II InP-GaAsSb-InP DHBTs With FTLiu, H.G. et al. | 2006
- 559
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15-nm base type-II InP/GaAsSb/InP DHBTs with FT=384 GHz and a 6-V BVCEOLiu, H.G. / Watkins, S.P. / Bolognesi, C.R. et al. | 2006
- 562
-
BRIEFS - Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTsPalacios, T. et al. | 2006
- 562
-
Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTsPalacios, T. / Chini, A. / Buttari, D. / Heikman, S. / Chakraborty, A. / Keller, S. / DenBaars, S.P. / Mishra, U.K. et al. | 2006
- 565
-
On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMTOxley, C.H. / Uren, M.J. / Coates, A. / Hayes, D.G. et al. | 2006
- 565
-
BRIEFS - On the Temperature and Carrier Density Dependence of Electron Saturation Velocity in an AlGaN-GaN HEMTOxley, C.H. et al. | 2006
- 568
-
An ultralow-loss and broadband micromachined RF inductor for RFIC input-matching applicationsTao Wang, / Yo-Sheng Lin, / Shey-Shi Lu, et al. | 2006
- 568
-
BRIEFS - An Ultralow-Loss and Broadband Micromachined RF Inductor for RFIC Input-Matching ApplicationsWang, T. et al. | 2006
- 571
-
BRIEFS - A Method to Determine the Gate Bias-Dependent and Gate Bias-Independent Components of MOSFET Series Resistance From S-ParametersTorres-Rios, E. et al. | 2006
- 571
-
A method to determine the gate bias-dependent and gate bias-independent components of MOSFET series resistance from S-parametersTorres-Rios, E. / Torres-Torres, R. / Valdovinos-Fierro, G. / Gutierrez-D, E.A. et al. | 2006
- 573
-
BRIEFS - Numerical Simulation of Parasitic Resistance Effects in Polycrystalline Silicon TFTsGaucci, P. et al. | 2006
- 573
-
Numerical simulation of parasitic resistance effects in polycrystalline silicon TFTsGaucci, P. / Valletta, A. / Mariucci, L. / Fortunato, G. / Brotherton, S.D. et al. | 2006
- 577
-
BRIEFS - A Super Beta Bipolar Transistor Using SiGe-Base Surface Accumulation Layer Transistor (SALTran) Concept: A Simulation StudyKumar, M.J. et al. | 2006
- 577
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A super beta bipolar transistor using SiGe-base surface accumulation layer transistor(SALTran) concept: a simulation studyKumar, M.J. / Singh, P. et al. | 2006
- 580
-
ANNOUNCEMENTS - Call for Papers -- 2006 IEEE International SOI Conference| 2006
- 580
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2006 IEEE International SOI Conference| 2006
- 581
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ANNOUNCEMENTS - Call for Papers for a Special Issue of the IEEE TRANSACTIONS ON ELECTRON DEVICES on Spintronics| 2006
- 581
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Special issue on spintronics| 2006
- 583
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2006 Workshop on Microelectronics and Electronic Devices (WMED-2006)| 2006
- 583
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ANNOUNCEMENTS - Call for Papers -- 2006 Workshop on Microelectronics and Electronic Devices| 2006
- 584
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ANNOUNCEMENTS - Call for Papers -- 20th IEEE International Conference on Microelectronic Test Structures| 2006
- 584
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20th IEEE International Conference on Microelectronic Test Structures| 2006
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Table of contents| 2006
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IEEE Transactions on Electron Devices publication information| 2006
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IEEE Transactions on Electron Devices information for authors| 2006