Automated vertical design optimization of a 1200V IGBT (English)
- New search for: Philippou, A.
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In:
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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72-75
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2015
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ISSN:
- Conference paper / Electronic Resource
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Title:Automated vertical design optimization of a 1200V IGBT
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Contributors:
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Published in:
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Publisher:
- New search for: IEEE
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Publication date:2015-09-01
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Size:500933 byte
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Drift-diffusion and computational electronics - still going strong after 40 years!Lundstrom, Mark et al. | 2015
- 1
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Analysis of the soft error rates on 65-nm SOTB and 28-nm UTBB FD-SOI structures by a PHITS-TCAD based simulation toolZhang, Kuiyuan / Kanda, Shohei / Yamaguchi, Junki / Furuta, Jun / Kobayashi, Kazutoshi et al. | 2015
- 4
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TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessmentTavernier, C. / Pereira, F. G. / Nier, O. / Rideau, D. / Monsieur, F. / Torrente, G. / Haond, M. / Jaouen, H. / Noblanc, O. / Niquet, Y.M. et al. | 2015
- 8
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Atomistic quantum transport approach to time-resolved device simulationsNovakovic, Bozidar / Klimeck, Gerhard et al. | 2015
- 12
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Multiscale strain simulation for semiconductor devices base on the valence force field and the finite element methodsPark, Hong-Hyun / Chihak Ahn, / Woosung Choi, / Keun-Ho Lee, / Youngkwan Park, et al. | 2015
- 16
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SplitSolve: A fast solver for wave function based quantum transport simulations on acceleratorsCalderara, M. / Bruck, S. / Luisier, M. et al. | 2015
- 20
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Small signal and microscopic noise simulation of an nMOSFET by a self-consistent, semi-classical and deterministic approachRuic, Dino / Jungemann, Christoph et al. | 2015
- 24
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Improved drive-current into nanoscaled channels using electrostatic lensesEllinghaus, P. / Nedjalkov, M. / Selberherr, S. et al. | 2015
- 28
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Full-zone k · p parametrization for III-As materialsMugny, G. / Rideau, D. / Triozon, F. / Niquet, Y.-M. / Kriso, C. / Pereira, F.G. / Garetto, D. / Tavernier, C. / Delerue, C. et al. | 2015
- 32
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Mobility and bulk electron-phonon interaction in two-dimensional materialsGunst, Tue / Brandbyge, Mads / Markussen, Troels / Stokbro, Kurt et al. | 2015
- 36
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A computationally efficient non-parabolic bandstructure model for quantum transport simulationsZiegler, Anne / Frey, Martin / Smith, Lee / Luisier, Mathieu et al. | 2015
- 40
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Atomic level simulation of permittivity of oxidized ultra-thin Si channelsMarkov, Stanislav / Kwok, YanHo / Chen, GuanHua / Penazzi, Gabriele / Aradi, Balint / Frauenheim, Thomas / Pecchia, Alessandro et al. | 2015
- 44
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A density-functional study of defect volatility in amorphous silicon dioxideWimmer, Y. / Goes, W. / El-Sayed, A.-M. / Shluger, A.L. / Grasser, T. et al. | 2015
- 48
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Modeling of oxygen-vacancy hole trap activation in 4H-SiC MOSFETs using density functional theory and rate equation analysisEttisserry, D. P. / Goldsman, N. / Akturk, A. / Lelis, A. J. et al. | 2015
- 52
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First-principles simulations of nanoscale transistorsBlom, Anders / Pozzoni, Umberto Martinez / Markussen, Troels / Stokbro, Kurt et al. | 2015
- 56
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Dielectric material for monolayer black phosphorus transistors: A first-principles investigationQing Shi, / Hong Guo, / Fei Liu, et al. | 2015
- 60
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Modeling of hot-carrier degradation in LDMOS devices using a drift-diffusion based approachSharma, Prateek / Jech, Markus / Tyaginov, Stanislav / Rudolf, Florian / Rupp, Karl / Enichlmair, Hubert / Park, Jong-Mun / Grasser, Tibor et al. | 2015
- 64
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Impacts of the 4H-SiC/SiO2 interface states on the switching operation of power MOSFETsSakai, Atsushi / Eikyu, Katsumi / Sonoda, Kenichiro / Hisada, Kenichi / Arai, Koichi / Yamamoto, Yoichi / Tanizawa, Motoaki / Yamaguchi, Yasuo et al. | 2015
- 68
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Numerical simulation of highly periodical Ge/Si quantum dot array for intermediate-band solar cell applicationsYi-Chia Tsai, / Lee, Ming-Yi / Li, Yiming / Samukawa, Seiji et al. | 2015
- 72
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Automated vertical design optimization of a 1200V IGBTPhilippou, A. / Bina, M. / Niedernostheide, F.-J. et al. | 2015
- 76
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Investigation of leakage current in pinned photodiode CMOS imager pixel with negative transfer-gate bias operationTakeuchi, Yosuke / Kunikiyo, Tatsuya / Kamino, Takeshi / Kimura, Masatoshi / Tanizawa, Motoaki / Yamaguchi, Yasuo et al. | 2015
- 80
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Challenges and responses for virtual siliconKeun-Ho Lee, et al. | 2015
- 84
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Transistors performance in the sub-1 nm technology node based on one-dimensional nanomaterialsFang, Jingtian / Vandenberghe, William G. / Fischetti, Massimo V. et al. | 2015
- 88
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Change in electronic properties of carbon nanotubes caused by local distortion under axial compressive strainSuzuki, Ken / Ohnishi, Masato / MIura, Hideo et al. | 2015
- 92
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Toward RF-linearity for planar local back- and top-gate SB-CNTFETsMothes, Sven / Claus, Martin / Schroter, Michael et al. | 2015
- 96
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Simulation of resonance energy transfer in carbon nanotube composites for photovoltaic applicationsDavoody, mirhossein / Gabourie, lexander J. / Knezevic, rena et al. | 2015
- 100
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A 3D self-consistent percolative model for AC-DC electrical analysis of carbon nanotubes networksColasanti, Simone / Bhatt, Vijay Deep / Abdelhalim, Ahmed / Abdellah, Alaa / Lugli, Paolo et al. | 2015
- 104
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Thermal simulation of nanosecond laser annealing of 3D sequential VLSIMathieu, Benoit / Fenouillet-Beranger, Claire / Kerdiles, Sebastien / Barbe, Jean-Charles et al. | 2015
- 108
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Electrothermal simulation of SiGe HBTs and investigation of experimental extraction methods for junction temperatureKamrani, Hamed / Kochubey, Tatiana / Jabs, Dominic / Jungemann, Christoph et al. | 2015
- 112
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3D electro-thermal simulations of bulk FinFETs with statistical variationsWang, L. / Brown, A. R. / Nedjalkov, M. / Alexander, C. / Cheng, B. / Millar, C. / Asenov, A. et al. | 2015
- 116
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Advanced methodology for fast 3-D TCAD electrothermal simulation of power HEMTs including packageChvala, Ales / Donoval, Daniel / Molnar, Marian / Marek, Juraj / Pribytny, Patrik et al. | 2015
- 120
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Electrothermal simulation of ultra-scale MOSEFTNghiem, Thi Thu Trang / Saint-Martin, Jerome / Dollfus, Philippe et al. | 2015
- 124
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Theoretical study of the spontaneous electron-hole exciton condensates between n and p-type MoS2 monolayers, toward beyond CMOS applicationsXian Wu, / Mou, Xuehao / Register, Leonard F. / Banerjee, Sanjay K. et al. | 2015
- 128
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Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrierLucci, Luca / Barbe, Jean-Charles / Pala, Marco et al. | 2015
- 132
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Monte Carlo simulation of the dynamic charge hopping transport in organic thin film transistorsWei Wang, / Ling Li, / Zhuoyu Ji, / Nianduan Lu, / Congyan Lu, / Guangwei Xu, / Ming Liu, et al. | 2015
- 136
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Simulation of bipolar organic semiconductor devices based on the master equation including generation and recombinationWeifeng Zhou, / Zimmermann, Christoph / Jungemann, Christoph et al. | 2015
- 140
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Origin of mobility degeneration at high gate bias in organic thin film transistors based on carriers' freeze to surface chargesGuangwei Xu, / Wang, Wei / Wang, Lingfei / Ji, Zhuoyu / Wang, Long / Li, Ling / Liu, Ming et al. | 2015
- 144
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Microscopic oxide defects causing BTI, RTN, and SILC on high-k FinFETsRzepa, G. / Waltl, M. / Goes, W. / Kaczer, B. / Grasser, T. et al. | 2015
- 148
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3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps couplingYun Li, / Zhiyuan Lun, / Huang, Peng / Wang, Yijiao / Hai Jiang, / Du, Gang / Liu, Xiaoyan et al. | 2015
- 152
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Reliability aware simulation flow: From TCAD calibration to circuit level analysisHussin, Razaidi / Gerrer, Louis / Ding, Jie / Amaroso, Salvatore Maria / Wang, Liping / Semicic, Marco / Weckx, Pieter / Franco, Jacopo / Vanderheyden, Annelies / Vanhaeren, Danielle et al. | 2015
- 157
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Comprehensive ‘atomistic’ simulation of statistical variability and reliability in 14 nm generation FinFETsAdamu-Lema, F. / Wang, X. / Amoroso, S. M. / Gerrer, L. / Millar, C. / Asenov, A. et al. | 2015
- 161
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Coupled 2D/3D transport: Analysis of graphene-SiC devicesAncona, M.G. / Hobart, K.D. / Anderson, T.J. et al. | 2015
- 165
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Engineering plasmons in graphene nanostructures in THz frequencies: Compact modeling and performance analysis for on-chip interconnectsRakheja, Shaloo et al. | 2015
- 169
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High thermoelectric figure of merit in devices made of vertically stacked graphene layersNguyen, V. Hung / Saint-Martin, J. / Dollfus, P. / Nguyen, M. Chung / Nguyen, H. Viet et al. | 2015
- 173
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Computational study of graphene FETs (GFETs) as room-temperature terahertz emitterLi, Wenshen / Shi Dong, / Wang, He / Zhang, Jinyu / Wang, Yan / Yu, Zhiping et al. | 2015
- 177
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Achieving a higher performance in bilayer graphene FET - strain engineeringChen, Fan W. / Ilatikhameneh, Hesameddin / Klimeck, Gerhard / Rahman, Rajib / Tao Chu, / Zhihong Chen, et al. | 2015
- 182
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RF technology optimization by a fast method for linearity determinationDinh, T. V. / Vohra, A. / Melai, J. / Vanhoucke, T. / Magnee, P. H. C. / Klaassen, D. B. M. et al. | 2015
- 186
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Expanding TCAD simulations from grid to cloudDemel, H. / Stanojevic, Z. / Karner, M. / Rzepa, G. / Grasser, T. et al. | 2015
- 190
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Modeling of electrostatically actuated fluid flow system for mixed-domain simulationMaiti, T. K. / Chen, L. / Miyamoto, H. / Miura-Mattausch, M. / Mattausch, H. J. et al. | 2015
- 194
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Impact of microstructure and current crowding on electromigration: A TCAD studyCeric, H. / Rovitto, M. et al. | 2015
- 198
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Layout-based TCAD device model generationKernstock, C. / Stanojevic, Z. / Baumgartner, O. / Karner, M. et al. | 2015
- 202
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Efficient modeling of source/drain tunneling in ultra-scaled transistorsBaumgartner, O. / Filipovic, La. / Kosina, H. / Karner, M. / Stanojevic, Z. / Cheng-Karner, H.W. et al. | 2015
- 206
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Mechanical simulation of stress engineering solutions in highly strained p-type FDSOI MOSFETs for 14-nm node and beyondOudrhiri, A. Idrissi-El / Martinie, S. / Barbe, J-C. / Rozeau, O. / Le Royer, C. / Jaud, M-A. / Lacord, J. / Bernier, N. / Grenouillet, L. / Rivallin, P. et al. | 2015
- 210
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Monte Carlo investigation of Silicon MOSFET for terahertz detectionWang, Juncheng / Du, Gang / Liu, Xiaoyan et al. | 2015
- 214
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Impact of S/D tunneling in ultrascaled devices, a Multi-Subband Ensemble Monte Carlo studyMedina-Bailon, C. / Sampedro, C. / Gamiz, F. / Godoy, A. / Donetti, L. et al. | 2015
- 218
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Simulation of plasma immersion ion implantation into siliconBurenkov, Alex / Lorenz, Juergen / Spiegel, Yohann / Torregrosa, Frank et al. | 2015
- 222
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Modeling and tackling resistivity scaling in metal nanowiresMoors, Kristof / Soree, Bart / Magnus, Wim et al. | 2015
- 226
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ab-initio study on Schottky-Barrier modulation in NiSi2/Si interfaceJiseok Kim, / Byounghak Lee, / Yumi Park, / Murali, Kota V R M / Benistant, Francis et al. | 2015
- 230
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Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based studyValsaraj, Amithraj / Register, Leonard F. / Banerjee, Sanjay K. / Chang, Jiwon et al. | 2015
- 234
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Specific contact resistivity of n-type Si and Ge M-S and M-I-S contactsJiseok Kim, / Oldiges, Phillip J. / Hui-feng Li, / Niimi, Hiroaki / Raymond, Mark / Zeitzoff, Peter / Kamineni, Vimal / Adusumilli, Praneet / Chengyu Niu, / Chafik, Fadoua et al. | 2015
- 238
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Contact model based on TCAD-experimental interactive algorithmFeng, Peijie / Kim, Jiseok / Jin Cho, / Pandey, Shesh Mani / Narayanan, Sudarshan / Tng, Michelle / Bingwu Liu, / Banghart, Edmund / Baofu Zhu, / Pei Zhao, et al. | 2015
- 242
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Extending drift-diffusion paradigm into the era of FinFETs and nanowiresMunkang Choi, / Moroz, Victor / Smith, Lee / Joanne Huang, et al. | 2015
- 246
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Interplay between quantum mechanical effects and a discrete trap position in ultra-scaled FinFETsGeorgiev, Vihar P. / Amoroso, Salvatore M. / Gerrer, Louis / Adamu-Lema, Fikru / Asenov, Asen et al. | 2015
- 250
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Impact of gate oxide complex band structure on n-channel III–V FinFETsCrum, Dax M. / Valsaraj, Amithraj / Register, Leonard F. / Banerjee, Sanjay K. / Sahu, Bhagawan / Krivakopic, Zoran / Banna, Srinivasa / Nayak, Deepak et al. | 2015
- 254
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FinFET to nanowire transition at 5nm design rulesSmith, Lee / Munkang Choi, / Frey, Martin / Moroz, Victor / Ziegler, Anne / Luisier, Mathieu et al. | 2015
- 258
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Hierarchical TCAD device simulation of FinFETsKarner, M. / Stanojevic, Z. / Kernstock, C. / Cheng-Karner, H.W. / Baumgartner, O. et al. | 2015
- 262
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Modeling of temperature dependency of magnetization in straintronics memory devicesBarangi, Mahmood / Mazumder, Pinaki et al. | 2015
- 266
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Heterojunction resonant tunneling diode at the atomic limitGhosh, Ram Krishna / Lin, Yu-Chuan / Robinson, Joshua A. / Datta, Suman et al. | 2015
- 270
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Electrically doped WTe2 tunnel transistorsIlatikhameneh, Hesameddin / Rahman, Rajib / Appenzeller, Joerg / Klimeck, Gerhard et al. | 2015
- 273
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Modeling the imaginary branch in III–V tunneling devices: Effective mass vs k · pAlper, Cem / Visciarelli, Michele / Palestri, Pierpaolo / Padilla, Jose L. / Gnudi, Antonio / Gnani, Elena / Ionescu, Adrian M. et al. | 2015
- 277
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Injection direction sensitive spin lifetime model in a strained thin silicon filmGhosh, Joydeep / Osintsev, Dmitry / Sverdlov, Viktor / Selberherr, Siegfried et al. | 2015
- 281
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Thermal modeling of metal oxides for highly scaled nanoscale RRAMDeshmukh, Sanchit / Islam, Raisul / Chen, Clare / Yalon, Eilam / Saraswat, Krishna C. / Pop, Eric et al. | 2015
- 285
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Simulation of TaOX-RRAM with Ta2O5−X/TaO2−X stack engineeringZhao, Y.D. / Huang, P. / Chen, Z. / Liu, C. / Li, H.T. / Ma, W.J. / Gao, B. / Liu, X.Y. / Kang, J.F. et al. | 2015
- 289
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A finite-element thermoelectric model for phase-change memory devicesAthmanathan, Aravinthan / Krebs, Daniel / Sebastian, Abu / Le Gallo, Manuel / Pozidis, Haralampos / Eleftheriou, Evangelos et al. | 2015
- 293
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The role of the interface reactions in the electroforming of redox-based resistive switching devices using KMC simulationsAbbaspour, Elhameh / Menzel, Stephan / Jungemann, Christoph et al. | 2015
- 297
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Physical simulation of dynamic resistive switching in metal oxides using a Schottky contact barrier modelMarchewka, A. / Waser, R. / Menzel, S. et al. | 2015
- 301
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Coupling the Phase-Field Method with an electrothermal solver to simulate phase change mechanisms in PCRAM cellsCueto, Olga / Sousa, Veronique / Navarro, Gabriele / Blonkowski, Serge et al. | 2015
- 305
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Compact modeling of GaN HEMT based on device-internal potential distributionOkada, Y. / Tanimoto, Y. / Mizoguchi, T. / Zenitani, H. / Kikuchihara, H. / Mattausch, H. J. / Miura-Mattausch, M. et al. | 2015
- 309
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A generic approach for capturing process variations in lookup-table-based FET modelsWang, Jing / Xu, Nuo / Woosung Choi, / Keun-Ho Lee, / Youngkwan Park, et al. | 2015
- 313
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A physics-based compact model for Fully-Depleted Tunnel Field Effect TransistorMartinie, S. / Rozeau, O. / Le Royer, C. / Lacord, J. / Jaud, M-A. / Poiroux, T. / Le Carval, G. / Barbe, J-C. et al. | 2015
- 317
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Channel-potential based compact model of Double-Gate Tunneling FETs considering channel-length scalingWu, Peng / Zhang, Jinyu / Zhang, Li / Yu, Zhiping et al. | 2015
- 321
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A circuit model for a Si-based biomimetic synaptic time-keeping deviceOstwal, Vaibhav / Rajendran, Bipin / Ganguly, Udayan et al. | 2015
- 325
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Hierarchical variability-aware compact models of 20nm bulk CMOSWang, Xingsheng / Reid, Dave / Wang, Liping / Burenkov, Alex / Millar, Campbell / Lorenz, Juergen / Asenov, Asen et al. | 2015
- 329
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Using density functional theory to engineer direct gap germanium-tin alloyDarmody, Chris / Ettisserry, D. P. / Goldsman, Neil / Dhar, Nibir K. et al. | 2015
- 337
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Diffusion-drift modeling of carbon-based nanowire FETsAncona, M.G. / Boos, J.B. et al. | 2015
- 341
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Advanced TCAD simulation of local mismatch in 14nm CMOS technology FinFETsBazizi, E. M. / Chakarov, I. / Herrmann, T. / Zaka, A. / Jiang, L. / Wu, X. / Pandey, S. M. / Benistant, F. / Reid, D. / Brown, A. R. et al. | 2015
- 345
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Impact of backplane configuration on the statistical variability in 22nm FDSOI CMOSBazizi, E. M. / Chakarov, I. / Herrmann, T. / Zaka, A. / Jiang, L. / Wu, X. / Pandey, S. M. / Benistant, F. / Reid, D. / Brown, A. R. et al. | 2015
- 349
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Leakage reduction in stacked sub-10nm double-gate MOSFETsCho, Woo-Suhl / Roy, Kaushik et al. | 2015
- 353
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Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETsDonetti, Luca / Sampedro, Carlos / Gamiz, Francisco / Godoy, Andres / Garcia-Ruiz, Francisco J. / Towiez, Ewan / Georgiev, Vihar P. / Amoroso, Salvatore Maria / Riddet, Craig / Asenov, Asen et al. | 2015
- 357
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Electrical characteristic of InGaAs multiple-gate MOSFET devicesHuang, Cheng-Hao / Li, Yiming et al. | 2015
- 361
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A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations for GaAs devices by a deterministic solverKargar, Zeinab / Ruic, Dino / Jungemann, Christoph et al. | 2015
- 365
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Impact of deep p-well structure on single event latchup in bulk CMOSKato, Takashi / Matsuyama, Hideya et al. | 2015
- 369
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Layout-induced stress effects on the performance and variation of FinFETsLee, Choongmok / Kang, Hyun-Chul / Min, Jeong Guk / Kim, Jongchol / Kwon, Uihui / Lee, Keun-Ho / Park, Youngkwan et al. | 2015
- 373
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Influence of mechanical strain in Si and Ge p-type double gate MOSFETsMoussavou, M. / Cavassilas, N. / Dib, E. / Bescond, M. et al. | 2015
- 377
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Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETsNagy, Daniel / Elmessary, Muhammad A. / Aldegunde, Manuel / Lindberg, Jari / Garcia-Loureiro, Antonio J. / Kalna, Karol et al. | 2015
- 381
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Critical distance method for predicting the tail part of the threshold voltage distributionRhee, Sungman / Choi, Seongwook / Park, YoungJune et al. | 2015
- 385
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Physical simulation of Si-based resistive random-access memory devicesSadi, Toufik / Wang, Liping / Gerrer, Louis / Asenov, Asen et al. | 2015
- 389
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Integrated modeling platform for High-k/alternate channel material heterostructure stacksVaidya, Dhirendra / Hegde, Arjun / Lodha, Saurabh / Ganguly, Swaroop / Nainani, Aneesh / Yoshida, Naomi / Guarini, Theresa et al. | 2015
- 393
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Bipolar Monte Carlo simulation of hot carriers in III-N LEDsKivisaari, Pyry / Sadi, Toufik / Li, Jingrui / Georgiev, Vihar / Oksanen, Jani / Rinke, Patrick / Tulkki, Jukka et al. | 2015
- 397
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Simulation of Indirect-Direct transformation phenomenon of germanium under uniaxial and biaxial strain along arbitrary orientationsXiao, Ziyang / Goldsman, Neil / Dhar, Nibir K. et al. | 2015
- 401
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Towards “atomistic” dopant profiling using SCM measurementsAghaei, Samira / Andrei, Petru / Hagmann, Mark et al. | 2015
- 405
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Numerical simulation of percolation model for time dependent dielectric breakdown (TDDB) under non-uniform trap distributionChoi, Seongwook / Park, Young June et al. | 2015
- 409
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A moving mesh method for device simulationFukuda, Koichi / Asai, Hidehiro / Hattori, Junichi / Koshimoto, Hiroo / Ikegami, Tsutomu et al. | 2015
- 413
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Lithography process model building using locally linear embeddingKumar, Pardeep / Rosenbluth, Alan E. / Srinivasan, Babji / Viswanathan, Ramya / Mohapatra, Nihar R. et al. | 2015
- 417
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TCAD analysis of FinFET stress engineering for CMOS technology scalingGendron-Hansen, Amaury / Korablev, Konstantin / Chakarov, Ivan / Egley, James / Cho, Jin / Benistant, Francis et al. | 2015
- 421
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Factors that influence delamination at the bottom of open TSVsPapaleo, S. / Zisser, W. H. / Ceric, H. et al. | 2015
- 425
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Implication of hysteretic selector device on the biasing scheme of a cross-point memory arrayAziz, Ahmedullah / Shukla, Nikhil / Datta, Suman / Gupta, Sumeet Kumar et al. | 2015
- 429
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Intrinsic and extrinsic stability of Ovonic-switching devicesBuscemi, F. / Piccinini, E. / Brunetti, R. / Rudan, M. et al. | 2015
- 433
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Power-performance-area engineering of 5nm nanowire library cellsMoroz, Victor / Lin, Xi-Wei / Smith, Lee / Huang, Joanne / Choi, Munkang / Ma, Terry / Liu, Jie / Zhang, Yunqiang / Kawa, Jamil / Saad, Yves et al. | 2015
- 438
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Simulation of thermal crosstalk of resistive switching memory in three-dimensional crossbar structureLu, N. D. / Sun, P. X. / Li, L. / Liu, M. / Li, Y. T. / Liu, S. et al. | 2015
- 442
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Sandwiched-gate inverter: Novel device structure for future logic gatesRyu, Myunghwan / Bien, Franklin / Kim, Youngmin et al. | 2015
- 446
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Improving the performance of a non-volatile magnetic flip flop by exploiting the spin Hall effectWindbacher, Thomas / Makarov, Alexander / Sverdlov, Viktor / Selberherr, Siegfried et al. | 2015
- 450
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Kinetic Monte Carlo simulations to Investigate The effects of interfaces in organic photovoltaic cells including a realistic blend morphologyAlbes, Tim / Lugli, Paolo / Gagliardi, Alessio et al. | 2015
- 455
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TCAD simulation methodology for 3-D advanced electro-physical and optical analysisPribytny, Patrik / Molnar, Marian / Chvala, Ales / Marek, Juraj / Mikolasek, Miroslav / Donoval, Daniel et al. | 2015
- 459
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Design optimal built-in snubber in trench field plate power MOSFET for superior EMI and efficiency performanceChen, Jingjing et al. | 2015
- 463
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An enhanced specialized SiC power MOSFET simulation systemDilli, Z. / Akturk, A. / Goldsman, N. / Potbhare, S. et al. | 2015
- 467
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Transient 3-D TCAD simulation of multiple snapback event in mixed-mode test for mutual relation between protection devicesKwon, Hyoungcheol / Lee, Yoonsung / Kim, Sangyong / Seung, Manho / Lee, Changyeol / Lee, Seokkiu / Hong, Sungjoo et al. | 2015
- 471
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Mechanical properties of homogeneous and heterogeneous layered 2D materialsElder, Robert M. / Neupane, Mahesh R. / Chantawansri, Tanya L. et al. | 2015
- 475
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Author index| 2015
- i
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Front al| 2015