4.5 kV-2000 A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT) (English)
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In:
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)
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33-36
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2000
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ISBN:
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ISSN:
- Conference paper / Electronic Resource
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Title:4.5 kV-2000 A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)
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Contributors:Fujii, T. ( author ) / Yoshikawa, K. ( author ) / Koga, T. ( author ) / Nishiura, A. ( author ) / Takahashi, Y. ( author ) / Kakiki, H. ( author ) / Ichijyou, M. ( author ) / Seki, Y. ( author )
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Published in:
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Publisher:
- New search for: IEEE
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Publication date:2000-01-01
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Size:395861 byte
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 0_2
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2000 International Symposium On Power Semiconductor Devices And IC's| 2000
- 3
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Progress in wide bandgap semiconductor SiC for power devicesMatsunami, H. et al. | 2000
- 11
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A review of RESURF technologyLudikhuize, A.W. et al. | 2000
- 19
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Beyond Y2K: technology convergence as a driver of future low-voltage power management semiconductorsWilliams, R.K. et al. | 2000
- 25
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IEGT design concept against operation instability and its impact to applicationOmura, I. / Demon, T. / Miyanagi, T. / Ogura, T. / Ohashi, H. et al. | 2000
- 29
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A high voltage IGBT and diode chip set designed for the 2.8 kV DC link level with short circuit capability extending to the maximum blocking voltageBauer, F. / Kaminski, N. / Linder, S. / Zeller, H. et al. | 2000
- 33
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4.5 kV-2000 A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)Fujii, T. / Yoshikawa, K. / Koga, T. / Nishiura, A. / Takahashi, Y. / Kakiki, H. / Ichijyou, M. / Seki, Y. et al. | 2000
- 37
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Experimental study on plasma engineering in 6500 V IGBTsWikstrom, T. / Bauer, F. / Linder, S. / Fichtner, W. et al. | 2000
- 43
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Low voltage CMOS compatible power MOSFET for on-chip DC/DC convertersNassif-Khalil, S.G. / Honarkhah, S. / Salama, C.A.T. et al. | 2000
- 47
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Improved 20 V lateral trench gate power MOSFETs with very low on-resistance of 7.8 m/spl Omega//spl middot/mm/sup 2/Nakagawa, A. / Kawaguchi, Y. et al. | 2000
- 51
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Complementary LDMOS transistors for a CMOS/BiCMOS processWhiston, S. / Bain, D. / Deignan, A. / Pollard, J. / Chleirigh, C.N. / O'Neill, C.M.M. et al. | 2000
- 55
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Folded gate LDMOS with low on-resistance and high transconductanceShuming Xu, / Yuanzheng Zhu, / Pang-Dow Foo, / Liang, Y.C. / Sin, J.K.O. et al. | 2000
- 61
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Analysis of the forward biased safe operating area of the super junction MOSFETZhang, B. / Xu, Z. / Huang, A.Q. et al. | 2000
- 65
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MDmesh/sup TM/: innovative technology for high voltage Power MOSFETsSaggio, M. / Fagone, D. / Musumeci, S. et al. | 2000
- 69
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A new generation of power unipolar devices: the concept of the FLoating islands MOS transistor (FLIMOST)Cezac, N. / Morancho, F. / Rossel, P. / Tranduc, H. / Payre-Lavigne, A. et al. | 2000
- 73
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Which is cooler, trench or multi-epitaxy? Cutting edge approach for the silicon limit by the super trench power MOS-FET (STM)Minato, T. / Nitta, T. / Uenisi, A. / Yano, M. / Harada, M. / Hine, S. et al. | 2000
- 77
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Experimental results and simulation analysis of 250 V super trench power MOSFET (STM)Nitta, T. / Minato, T. / Yano, M. / Uenisi, A. / Harada, M. / Hine, S. et al. | 2000
- 83
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Advantages of thick CVD gate oxide for trench MOS gate structuresNakamura, K. / Kusunoki, S. / Nakamura, H. / Harada, M. et al. | 2000
- 87
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Trench corner rounding technology using hydrogen annealing for highly reliable trench DMOSFETsSang-Gi Kim, / Jongdae Kim, / Jin Gun Koo, / Kee Soo Nam, / Kyoung-Ik Cho, et al. | 2000
- 91
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Advanced on-chip polysilicon CMOS analog and driver circuit technology for intelligent discrete devicesMatsudai, T. / Kojima, T. / Nakagawa, A. et al. | 2000
- 97
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High temperature static and dynamic characteristics of 3.7 kV high voltage 4H-SiC JBSAsano, K. / Hayashi, T. / Saito, R. / Sugawara, Y. et al. | 2000
- 101
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1500 V, 4 amp 4H-SiC JBS diodesSingh, R. / Ryu, S. / Palmour, J.W. / Hefner, A.R. / Lai, J. et al. | 2000
- 105
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4.5 kV novel high voltage high performance SiC-FET "SIAFET"Sugawara, Y. / Asano, M. / Singh, R. / Palmour, J. / Takayama, D. et al. | 2000
- 109
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Novel power MOS devices with SiGe/Si heterojunctionsPing Li, / Yajuan Su, / Mengsi You, / Xuening Li, et al. | 2000
- 115
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6.5 kV ultra soft & fast recovery diode (U-SFD) with high reverse recovery capabilityMori, M. / Kobayashi, H. / Yasuda, Y. et al. | 2000
- 119
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An advanced FWD design concept with superior soft reverse recovery characteristicsNemoto, M. / Nishiura, A. / Naito, T. / Kirisawa, M. / Otsuki, M. / Seki, Y. et al. | 2000
- 123
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A new degree of freedom in diode optimization: arbitrary axial lifetime profiles by means of ion irradiationHazdra, P. / Vobecky, J. / Galster, N. / Humbel, O. / Dalibor, T. et al. | 2000
- 127
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Real time calculation of the chip temperature of power modules in PWM inverters using a 16 bit microcontrollerReimann, T. / Krummer, R. / Franke, U. / Petzoldt, J. / Lorenz, L. et al. | 2000
- 133
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High voltage driver built in a low voltage 0.18 /spl mu/m CMOS for cache redundancy applications in microprocessorsBergemont, A. / Saadat, I. / Francis, P. / Pichler, C. / Haggag, H. / Kalnitsky, A. et al. | 2000
- 137
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A SOI LDMOS/CMOS/BJT technology for fully-integrated RF power amplifiersTan, Y. / Kumar, M. / Sin, J.K.O. / Shi, L. / Lau, J. et al. | 2000
- 141
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Advanced power copper technology for SMARTMOS/sup TM/ application designsPages, I. / Baird, B. / Wang, J. / Sicard, T. / Dorkel, J.M. / Dupuy, P. / Lance, P. / Huynh, E. / Chung, Y. et al. | 2000
- 145
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Optimization of the body-diode of power MOSFETs for high efficiency synchronous rectificationZeng, J. / Wheatley, C.F. / Stokes, R. / Kocon, C. / Benczkowski, S. et al. | 2000
- 149
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A fast-switching SOI SA-LIGBT without NDR regionJung-Hoon Chul, / Dae-Seok Byeon, / Jae-Keun Oh, / Min-Koo Han, / Yearn-Ik Choi, et al. | 2000
- 153
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Improved device ruggedness by floating buffer ringLudikhuize, A.W. / Heringa, A. / Van Roijen, R. / Van Zwol, J. et al. | 2000
- 157
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Implant spacer optimization for the improvement of power MOSFETs' unclamped inductive switching (UIS) and high temperature breakdownKocon, C. / Zeng, J. / Stokes, R. et al. | 2000
- 161
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Comparison of high-frequency performance of quasi-SOI and conventional SOI power MOSFETsHiraoka, Y. / Matsumoto, S. / Sakai, T. et al. | 2000
- 165
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Reliability characterization of LDMOS transistors submitted to multiple energy dischargesBosc, J.-M. / Percheron-Garcon, I. / Huynh, E. / Lance, P. / Pages, I. / Dorkel, J.M. / Sarrabayrouse, G. et al. | 2000
- 169
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Substrate current protection in smart power IC'sGonnard, O. / Charitat, G. / Lance, P. / Stefanov, E. / Suquet, M. / Bafleur, M. / Mauran, N. / Peyre-Lavigne, A. et al. | 2000
- 173
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Physical compact modeling of layout dependent metal resistance in integrated LDMOS power devicesKniffin, M.L. / Thoma, R. / Victory, J. et al. | 2000
- 177
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Single poly EEPROM for smart power IC'sCarman, E. / Parris, P. / Chaffai, H. / Cotdeloup, F. / Debortoii, S. / Hemon, E. / Lin-Kwang, J. / Perat, O. / Sicard, T. et al. | 2000
- 181
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Tungsten and tungsten silicide (WSi/sub x/) as gate materials for trench MOSFETsAmbadi, S. / Hanneun, D. / Kitt, K. / Garcia, C. / Pearse, J. et al. | 2000
- 185
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Resurfed lateral bipolar transistors for high-voltage, high-frequency applicationsCao, G.J. / De Souza, M.M. / Narayanan, E.M.S. et al. | 2000
- 189
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A unified high accuracy SPICE library for the power semiconductor devices built with the analog behavioral macromodeling techniqueMaxim, A. / Andreu, D. / Boucher, J. et al. | 2000
- 193
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A 0.8 /spl mu/m-standard CMOS merges one-wire protocol interpreter and 2.5 A-18 V power switch to accomplish low-cost automotive networkDos Reis Filho, C.A. / Seminario, J.A.P. / Jara, M. / Finco, S. / Luque, W. et al. | 2000
- 197
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A novel vertical deep trench RESURF DMOS (VTR-DMOS)Glenn, J. / Siekkinen, J. et al. | 2000
- 201
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Minority carrier injection across the 3D RESURF junctionUdrea, F. / Popescu, A. / Ng, R. / Amaratunga, G.A.J. et al. | 2000
- 205
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Dielectric charge traps. A new structure element for power devicesKapels, H. / Plikat, R. / Silber, D. et al. | 2000
- 209
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IGBT module setup with integrated micro-heat sinksSteiner, T. / Sittig, R. et al. | 2000
- 213
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SiC power devices with low on-resistance for fast switching applicationsFriedrichs, P. / Mitlehner, H. / Dohnke, K.O. / Peters, D. / Schorner, R. / Weinert, U. / Baudelot, E. / Stephani, D. et al. | 2000
- 217
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High performance 300 V IGBTsShenoy, P.M. / Yedinak, J. / Gladish, J. et al. | 2000
- 221
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4500 V trench IEGTs having superior turn-on switching characteristicsNinomiya, H. / Takahashi, J. / Sugiyama, K. / Inoue, T. / Hasegawa, S. / Ogura, T. / Ohashi, H. et al. | 2000
- 225
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Evaluation of 600 V/100 A NPT-IGBT with a non-self-align shallow p-well formation techniquesOtsuki, M. / Momota, S. / Kirisawa, M. / Wakimoto, H. / Seki, Y. et al. | 2000
- 229
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Double-side packaged, high power IGBTs for improved thermal and switching characteristicsShanqi Zhao, / Sin, J.K.O. et al. | 2000
- 233
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Static and dynamic characteristics of 600-V, 10-A trench bipolar junction diodesYou, B. / Huang, A.Q. / Sin, J.K.O. / Xu, A. et al. | 2000
- 237
-
The monolithic bidirectional switch (MBS)Heinke, F. / Sittig, R. et al. | 2000
- 241
-
Characterization of fast 4.5 kV SiC p-n diodesPeters, D. / Friedrichs, P. / Mitlehner, H. / Schoerner, R. / Weinert, U. / Weis, B. / Stephani, D. et al. | 2000
- 245
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Over 2000 V FLR termination technologies for SiC high voltage devicesOnose, H. / Oikawa, S. / Yatsuo, T. / Kobayashi, Y. et al. | 2000
- 249
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A newly structured high voltage diode highlighting oscillation free function in recovery processSatoh, K. / Morishita, K. / Yamaguchi, Y. / Hirano, N. / Iwamoto, H. / Kawakami, A. et al. | 2000
- 253
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Physical phenomena in Si power diodes operating at high carrier injection levels and high temperatureHillkirk, L.M. / Breitholtz, B. / Lutz, J. et al. | 2000
- 257
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Junction termination technique for super junction devicesBai, Y. / Huang, A.Q. / Li, X. et al. | 2000
- 263
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The effect of static and dynamic parasitic charge in the termination area of high voltage devices and possible solutionsTrajkovic, T. / Udrea, F. / Waind, P.R. / Amaratunga, G.A.J. et al. | 2000
- 267
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Light-triggered thyristors with integrated protection functionsNiedernostheide, F.-J. / Schulze, H.-J. / Dorn, J. / Kellner-Werdehausen, U. / Westerholt, D. et al. | 2000
- 271
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Thermal analysis of high power IGBT modulesKhatir, Z. / Lefebvre, S. et al. | 2000
- 275
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Comparison of stripe and cellular geometry for short circuit rated trench IGBTChong Man Yun, / Hyun Chul Kim, / Kyu Hyun Lee, / Joo Il Kim, / Tae Hoon Kim, et al. | 2000
- 279
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600 V trench-gate NPT-IGBT with excellent low on-state voltageTanaka, M. / Teramae, S. / Takahashi, Y. / Takeda, T. / Yamaguchi, M. / Ogura, T. / Tsunoda, T. / Nakao, S. et al. | 2000
- 283
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Experimental measurements of recombination lifetime in proton irradiated power devicesDaliento, S. / Sanseverino, A. / Spirito, P. / Busatto, G. / Wiss, J. et al. | 2000
- 287
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Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applicationsNallet, F. / Senes, A. / Planson, D. / Locatelli, M.L. / Chante, J.P. / Renault, D. et al. | 2000
- 291
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Comparison between finite-element and analytical calculations for the lifetime estimation of bond wires in IGBT modulesHager, C. / Stuck, A. / Tronel, Y. / Zehringer, R. / Fichtner, W. et al. | 2000
- 295
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A novel free wheeling diode for 1700 V IGBT moduleIwamuro, N. / Nagaune, F. / Iwaana, T. / Seki, Y. et al. | 2000
- 299
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Carrier lifetime characterization using an optimized free carrier absorption techniqueHille, F. / Hoffmann, L. / Schulze, H.-J. / Wachutka, G. et al. | 2000
- 303
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Modelling and simulation of the transient electromagnetic behavior of high power bus bars under switching conditionsBohm, P. / Wachutka, G. et al. | 2000
- 309
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2.3 kVac 100 MHz multi-channel monolithic isolator ICKojima, Y. / Nemoto, M. / Yukutake, S. / Iwasaki, T. / Amishiro, M. / Kanekawa, N. / Watanabe, A. / Takeuchi, Y. / Akiyama, N. et al. | 2000
- 313
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A novel 'cool' insulated base transistorDe Souza, M.M. / Spulber, O. / Sankara Narayanan, E.M. et al. | 2000
- 317
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A 0.35 /spl mu/m CMOS based smart power technology for 7 V-50 V applicationsParthasarathy, V. / Zhu, R. / Ger, M.L. / Khemka, V. / Bose, A. / Baird, R. / Roggenbauer, T. / Collins, D. / Chang, S. / Hui, P. et al. | 2000
- 323
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LDMOS implementation in a 0.35 /spl mu/m BCD technology (BCD6)Moscatelli, A. / Merlini, A. / Croce, G. / Galbiati, P. / Contiero, C. et al. | 2000
- 327
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A-BCD: An economic 100 V RESURF silicon-on-insulator BCD technology for consumer and automotive applicationsvan der Pol, J.A. / Ludikhuize, A.W. / Huizing, H.G.A. / van Velzen, B. / Hueting, R.J.E. / Mom, J.F. / van Lijnschoten, G. / Hessels, G.J.J. / Hooghoudt, E.F. / van Huizen, R. et al. | 2000
- 331
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Multi-voltage device integration technique for 0.5 /spl mu/m BiCMOS and DMOS processTerashima, T. / Yamamoto, F. / Hatasako, K. et al. | 2000
- 335
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A 65 V, 0.56 m/spl Omega/.cm/sup 2/ Resurf LDMOS in a 0.35 /spl mu/m CMOS processZhu, R. / Parthasarathy, V. / Bose, A. / Baird, R. / Khemka, V. / Roggenbauer, T. / Collins, D. / Chang, S. / Hui, P. / Ger, M.L. et al. | 2000
- 341
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SCR-LDMOS. A novel LDMOS device with ESD robustnessPendharkar, S. / Teggatz, R. / Devore, J. / Carpenter, J. / Efland, T. / Tsai, C.-Y. et al. | 2000
- 345
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Using "Adaptive resurf" to improve the SOA of LDMOS transistorsHower, P. / Lin, J. / Merchant, S. / Paiva, S. et al. | 2000
- 349
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A new power MOSFET having excellent avalanche capabilityUesugi, T. / Suzuki, T. / Murata, T. / Kawaji, S. / Tadano, H. et al. | 2000
- 355
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The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potentialLaska, T. / Munzer, M. / Pfirsch, F. / Schaeffer, C. / Schmidt, T. et al. | 2000
- 359
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Analysis on the low current turn-on behavior of IGBT moduleMomota, S. / Otsuki, M. / Ishii, K. / Takubo, H. / Seki, Y. et al. | 2000
- 363
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Optimizing 600 V punchthrough IGBT's for unclamped inductive switching (UIS)Yedinak, J. / Wood, B. / Shenoy, P. / Dolny, G. / Lange, D. / Morthorst, T. et al. | 2000
- 367
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A new void free soldering process in large-area, high power IGBT modulesOnuki, J. / Chonan, Y. / Komiyama, T. / Nihei, M. / Saitou, R. / Suwa, M. / Kitano, M. et al. | 2000
- 373
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High density, sub 10 m Ohm R/sub dson/ 100 volt N-channel FETs for automotive applicationsSobhani, S. / Kinzer, D. / Ma, L. / Asselanis, D. et al. | 2000
- 377
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A 0.35 /spl mu/m trench gate MOSFET with an ultra low on state resistance and a high destruction immunity during the inductive switchingNarazaki, A. / Maruyama, J. / Kayumi, T. / Hamachi, H. / Moritani, J. / Hine, S. et al. | 2000
- 381
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High-density low on-resistance trench MOSFETs employing oxide spacers and self-align technique for DC/DC converterJongdae Kim, / Tae Moon Rob, / Sang-Gi Kim, / Song, Q.S. / Jin Gun Koo, / Kee Soo Nam, / Kyoung-Ik Cho, / Dong Sung Ma, et al. | 2000
- 385
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Dummy gated radio frequency VDMOSFET with high breakdown voltage and low feedback capacitanceShuming Xu, / Changhong Ren, / Pang-Dow Foo, / Yong Liu, / Yi Su, et al. | 2000
- 389
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Author's index| 2000