Analog memory characteristics of 1T1R MoOx resistive random access memory (English)
- New search for: Jo, Mingyu
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- New search for: Tsurumaki-Fukuchi, Atsushi
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- New search for: Ando, Hideyuki
- New search for: Morie, Takashi
- New search for: Jo, Mingyu
- New search for: Katsumura, Reon
- New search for: Tsurumaki-Fukuchi, Atsushi
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In:
2016 IEEE Silicon Nanoelectronics Workshop (SNW)
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78-79
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2016
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ISBN:
- Conference paper / Electronic Resource
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Title:Analog memory characteristics of 1T1R MoOx resistive random access memory
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Contributors:Jo, Mingyu ( author ) / Katsumura, Reon ( author ) / Tsurumaki-Fukuchi, Atsushi ( author ) / Arita, Masashi ( author ) / Takahashi, Yasuo ( author ) / Ando, Hideyuki ( author ) / Morie, Takashi ( author )
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Published in:
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Publisher:
- New search for: IEEE
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Publication date:2016-06-01
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Size:1164700 byte
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ISBN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Comparison of ZnO and Ti doped ZnO sensing membrane in bio-sensor applicationsKao, Chyuan Haur / Chang, Che Wei / Lin, Chan-Yu / Su, Yen Lin / Lin, Chun Fu / Chang, Chia Lun / Liu, Chia Shao et al. | 2016
- 1
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Investigation of novel vertical super-thin body silicon MOSFET performance advantagesPirogova, Rimma / Wolf, Jeffrey / Koldiaev, Viktor et al. | 2016
- 1
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Welcome messageYee-Chia Yeo, / Ionescu, Adrian M. / Chung, Steve S. et al. | 2016
- 1
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Cover page| 2016
- 1
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Copyright page| 2016
- 1
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Technical program| 2016
- 1
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Committee list| 2016
- 1
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Activation of high concentrations of phosphorus in germanium by two-steps microwave annealingLee, Wen-Hsi / Shih, Tzu-Lang / Lin, Chia-Wei / Chung, Yi-Chen et al. | 2016
- 16
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Devices and circuits at the end of scalingFrank, David J. et al. | 2016
- 18
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Transport in non-conventional FETsAppenzeller, Joerg et al. | 2016
- 20
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Enhancement of inter-band tunneling due to low-dimensionality of lateral 2D Silicon Esaki diodesMoraru, D. / Tan, H. N. / Anh, L. T. / Manoharan, M. / Mizuno, T. / Nuryadi, R. / Mizuta, H. / Tabe, M. et al. | 2016
- 22
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Thermal limitations of two-dimensional semi-metallic WTe2 devicesXu, Runjie / Mleczko, Michal J. / Bohaichuk, Stephanie / Nishi, Yoshio / Pop, Eric et al. | 2016
- 24
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Black phosphorus transistors with enhanced hole transport and subthreshold swing using ultra-thin HfO2 high-k gate dielectricLing, Zhi-Peng / Feng, Xuewei / Jiang, He / He, Zhubing / Liu, Xinke / Ang, Kah-Wee et al. | 2016
- 26
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Dynamics of electrically driven sub-nanosecond switching in vanadium dioxideJerry, Matthew / Shukla, Nikhil / Paik, Hanjong / Schlom, Darrell G. / Datta, Suman et al. | 2016
- 28
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Coherent control of trapped-charge induced resonances in a field-effect transistorTenorio-Pearl, Jaime Oscar / Herbschleb, Ernst David / Creatore, Celestino / Chin, Alex / Oda, Shunri et al. | 2016
- 30
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Single-electron tunneling operation via a-few-donor quantum dots in SOI-FETs up to room temperatureSamanta, A. / Takasu, Y. / Mizuno, T. / Moraru, D. / Tabe, M. et al. | 2016
- 32
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Two competing limiters in MOSFETs scaling: Neutral defects and S/D plasmonsHsieh, Shang-Hsun / Hung, Jo-Chun / Weng, Heng-Jui / Tsai, Ming-Fu / Chiang, Chih-Chi / Chen, Ming-Jer et al. | 2016
- 34
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Energy band gap and phonon frequency in semiconductors are material constants?Kabuyanagi, Shoichi / Toriumi, Akira et al. | 2016
- 36
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Understanding the switching mechanism in RRAM using in-situ TEMPey, K.L. / Thamankar, R. / Sen, M. / Bosman, M. / Raghavan, N. / Shubhakar, K. et al. | 2016
- 38
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Self-selection RRAM cell with Sub-μA switching current and robust reliability fabricated by high-K/metal gate CMOS compatible technologyHuang, Peng / Chen, Sijie / Zhao, Yudi / Chen, Bing / Gao, Bin / Liu, Lifeng / Liu, Xiaoyan / Kang, Jinfeng et al. | 2016
- 40
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Multilevel conductance switching of a HfO2 RRAM array induced by controlled filament for neuromorphic applicationsWoo, Jiyong / Song, Jeonghwan / Moon, Kibong / Lee, Sangheon / Park, Jaesung / Hwang, Hyunsang et al. | 2016
- 42
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Vertical versus lateral tunneling FET non-volatile memory cellBiswas, Arnab / Tomar, Saurabh / Ionescu, Adrian M. et al. | 2016
- 44
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A novel one transistor non-volatile memory feasible for NOR and NAND applications in IoT eraChung, Steve S. / Hsieh, E. R. / Yang, S. P. / Chuang, C. H. et al. | 2016
- 46
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Energy efficient computing by redox-based memristive oxide elementsWaser, Rainer / Dittmann, Regina / Linn, Eike / Menzel, Stephan et al. | 2016
- 48
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Computing with coupled dynamical systemsDatta, Suman / Shukla, N. / Parihar, A. / Raychowdhury, A. et al. | 2016
- 50
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A hardware neural network for handwritten digits recognition using binary RRAM as synaptic weight elementWang, Wei / Li, Yang / Wang, Ming / Wang, Lingfei / Liu, Qi / Banerjee, Writam / Li, Ling / Liu, Ming et al. | 2016
- 52
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Contact resistance reduction on layered MoS2 by Ar plasma pre-treatmentHo, Yen-Teng / Chu, Yung-Ching / Jong, Chao An / Chen, Hung-Yi / Lin, Meng-Wei / Zhang, Ming / Chien, Po-Yen / Tu, Yung-Yi / Woo, Jason / Chang, Edward Yi et al. | 2016
- 54
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Synthesis of wafer-scale WSe2 by WOx selenization on SiO2 / Si substratesChu, Yung-Ching / Jong, Chao-An / Ho, Yen-Teng / Zhang, Ming / Chien, Po-Yen / Hsu, Hung-Ru / Chen, Hung-Yi / Tu, Yung-Yi / Pande, Krishna P. / Woo, Jason C.S. et al. | 2016
- 56
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High-mobility 2D layered semiconducting transistors based on large-area and highly crystalline CVD-grown MoSe2 for flexible electronicsHong, Seongin / Kim, Seung Min / Song, Won Geun / Hong, Youngki / Kim, Sunkook et al. | 2016
- 58
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Reliable doping technique for WSe2 by W:Ta co-sputtering processChien, Po-Yen / Zhang, Ming / Huang, Shao-Chia / Lee, Min-Hung / Hsu, Hung-Ru / Ho, Yen-Teng / Chu, Yung-Ching / Jong, Chao-An / Woo, Jason et al. | 2016
- 60
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Atomically flat metal-insulator-metal capacitors with enhanced linearityHuang, Chih-Hsiung / Fan, Sheng-Ting / Chen, Pin-Shiang / Sankar, Raman / Chou, F. C. / Liu, C. W. et al. | 2016
- 62
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Quantifying the impact of thickness and drain bias on black phosphorus field effect transistor performanceHaratipour, Nazila / Koester, Steven J. et al. | 2016
- 64
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Fabrication and RTN characteristics of gate-all-around poly-Si junctionless nanowire transistorsYang, Chen-Chen / Chen, Yung-Chen / Lin, Horng-Chih / Chang, Ruey-Dar / Li, Pei-Wen / Huang, Tiao-Yuan et al. | 2016
- 66
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Short-channel ZnON thin-film transistors with film profile engineeringKuan, Chin-I / Lin, Horng-Chih / Li, Pei-Wen / Huang, Tiao-Yuan et al. | 2016
- 70
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Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applicationsCasu, Emanuele Andrea / Lopez, Mariazel Maqueda / Vitale, Wolfgang A. / Fernandez-Bolanos, Montserrat / Ionescu, Adrian Mihai et al. | 2016
- 72
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Solid-gap resonators based on PVDF-TrFELopez, Mariazel Maqueda / Casu, Emanuele Andrea / Vitale, Wolfgang Amadeus / Ionescu, Adrian Mihai et al. | 2016
- 74
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Stable unipolar and bipolar resistive transitions of sputter-deposited SiO2 filmsYanaguchi, Rintaro / Akano, Takuya / Sato, Shingo / Omura, Yasuhisa et al. | 2016
- 76
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Effects of boron doping on resistance switching of graphene-oxide (GO) resistive RAM (RRAM)Lin, Cheng-Li / Hung, Ke-Yu / Wang, Tse-Wen / Lee, Jian-Dong / Lu, Yu -Jiun et al. | 2016
- 78
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Analog memory characteristics of 1T1R MoOx resistive random access memoryJo, Mingyu / Katsumura, Reon / Tsurumaki-Fukuchi, Atsushi / Arita, Masashi / Takahashi, Yasuo / Ando, Hideyuki / Morie, Takashi et al. | 2016
- 80
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Analysis of AC- gm dispersions due to traps in nitride charge trap layer and generated interface traps in 3-D NAND flash memory cellsKang, Ho-Jung / Jeong, Min-Kyu / Choi, Nagyong / Park, Byung-Gook / Lee, Jong-Ho et al. | 2016
- 82
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Ultrafast switching in Ta2O5-based resistive memoriesHavel, V. / Fleck, K. / Rosgen, B. / Rana, V. / Menzel, S. / Bottger, U. / Waser, R. et al. | 2016
- 84
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Improved endurance of RRAM by optimizing reset bias scheme in 1T1R configuration to suppress reset breakdownSung, Changhyuck / Song, Jeonghwan / Lee, Sangheon / Hwang, Hyunsang et al. | 2016
- 86
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Reliability study of Carbon Nanotube memory after various cycling conditionsInose, Takashi / Iwasaki, Tomoko Ogura / Ning, Sheyang / Viviani, Darlene / Manning, Monte / Huang, X. M. Henry / Rueckes, Thomas / Takeuchi, Ken et al. | 2016
- 88
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Optimal combinations of SCM characteristics and non-volatile cache algorithms for high-performance SCM/NAND flash hybrid SSDYamada, Tomoaki / Matsui, Chihiro / Takeuchi, Ken et al. | 2016
- 90
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Interface and oxide trap analysis at tunnel oxide of NAND flash memory with excluding the effect of floating gatePark, Sang-ku / Kim, Seung-Hyun / Lee, Sang-Ho / Kim, Do-Bin / Baek, Myung-Hyun / Park, Byung-Gook et al. | 2016
- 92
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Storage class memory based SSD performance in consideration of error correction capabilities and write/read latenciesTakishita, Hirofumi / Onagi, Takahiro / Takeuchi, Ken et al. | 2016
- 94
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Self-compliance Cu-doped HfO2-based selector with low leakage and high reliabilityLuo, Qing / Xu, Xiaoxin / Gong, Tiancheng / Lv, Hangbing / Long, Shibing / Liu, Qi / Liu, Ming et al. | 2016
- 96
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Current compliance impact on the variability of HfO2-based RRAM devicesZhang, Meiyun / Long, Shibing / Li, Yang / Liu, Qi / Lv, Hangbing / Liu, Ming et al. | 2016
- 106
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Improved electrical and reliability characteristics in Ge p-MOSFETs with in-situ plasma treatments and capping Hf/Zr on interfacial layersLi, Yan-Lin / Chang-Liao, Kuei-Shu / Yi, Shih-Han et al. | 2016
- 108
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Re-examination the effects of selenium segregation on the Schottky barrier height reduction of the NiGe/Ge contactChen, Yi-Ju / Chou, Hung-Ju / Li, Ching-I / Tsui, Bing-Yue et al. | 2016
- 110
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Fabrication and characterization of Pi-gate poly-Si junctionless and inversion mode Fin-FETs for 3-D IC applicationsHsieh, Don-Ru / Lin, Jer-Yi / Kuo, Po-Yi / Chao, Tien-Sheng et al. | 2016
- 112
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A Through Silicon Via for suppressing self-heating effect in tunnel field effect transistorKim, Jang Hyun / Jhon, Hee Sauk / Kwon, Dae Woong / Kim, Sihyun / Park, Byung-Gook et al. | 2016
- 114
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MOSFET-TFET hybrid NAND/NOR configuration for improved AC switching performanceKim, Sihyun / Kwon, Dae Woong / Kim, Jang Hyun / Park, Euyhwan / Lee, Junil / Park, Taehyung / Lee, Ryoongbin / Park, Byung-Gook et al. | 2016
- 116
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Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistorsSimanullang, Marolop / Wisna, Gde B. M. / Cao, Wei / Usami, Koichi / Banerjee, Kaustav / Oda, Shunri et al. | 2016
- 118
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An area efficient gate-all-around ring MOSFETHuang, Ya-Chi / Chiang, Meng-Hsueh / Wang, Shui-Jinn et al. | 2016
- 122
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State of the art power switching devices in SiC and their applicationsOstling, Mikael / Salemi, Arash / Elahipanah, Hossein / Zetterling, Carl-Mikael et al. | 2016
- 124
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On the track towards an electrically pumped group IV laserGrutzmacher, Detlev / Stange, Daniela / von den Driesch, Nils / Wirths, Stephan / Mantl, Siegfried / Buca, Dan M. / Hartmann, Jean Michel / Geiger, Richard / Sigg, Hans et al. | 2016
- 126
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In0.30Ga0.70As QW MOSFETs with peak mobility exceeding 3000 cm2/V·s fabricated on Si substratesYadav, Sachin / Annie, / Kohen, David / Nguyen, Xuan Sang / Lee, Kwang Hong / Gong, Xiao / Antoniadis, Dimitri / Fitzgerald, Eugene A. / Yeo, Yee Chia et al. | 2016
- 128
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High-mobility GeSn p-MOSFETs on transparent substrate utilizing nucleation-controlled liquid-phase crystallizationOka, Hiroshi / Amamoto, Takashi / Hosoi, Takuji / Shimura, Takayoshi / Watanabe, Heiji et al. | 2016
- 130
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Suspended Ge gate-all-around nanowire nFETs with junction isolation on bulk SiWan, Chia-Chen / Luo, Guang-Li / Hsu, Shu-Han / Hung, Kuo-Dong / Chu, Chun-Lin / Hou, Tuo-Hung / Su, Chun-Jun / Chen, Szu-Hung / Wu, Wen-Fa / Yeh, Wen-Kuan et al. | 2016
- 132
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Strained Ge0.91Sn0.09 Quantum Well p-MOSFETsHuang, Yu-Shiang / Huang, Chih-Hao / Huang, Chih-Hsiung / Lu, Fang-Liang / Chang, Da-Zhi / Lin, Chung-Yi / Wong, I-Hsieh / Jan, Sun-Rong / Lan, Huang-Siang / Liu, C. W. et al. | 2016
- 134
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Neutral beam technology -defect-free nanofabrication for novel nano-materials and nano-devicesSamukawa, Seiji et al. | 2016
- 136
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Stacked Nanowires FETs: Mechanical robustness evaluation for sub-7nm nodesGaben, Loic / Arnaud, Arthur / Barlas, Marios / Samson, M. P. / Arvet, C. / Vizioz, C. / Hartmann, J.-M. / Barraud, S. / Monfray, S. / Boeuf, F. et al. | 2016
- 138
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Increased drain-induced variability and within-device variability in extremely narrow silicon nanowire MOSFETs with width down to 2nmMizutani, Tomoko / Takeuchi, Kiyoshi / Suzuki, Ryota / Saraya, Takuya / Kobayashi, Masaharu / Hiramoto, Toshiro et al. | 2016
- 140
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Considerations on fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contactsBorrel, J. / Hutin, L. / Grampeix, H. / Nolot, E. / Ghegin, E. / Rodriguez, P. / Tabone, C. / Allain, F. / Barnes, J.-P. / Morand, Y. et al. | 2016
- 142
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Charge pumping EDMR towards charge/spin manipulation in silicon at room temperatureHori, Masahiro / Narimatsu, Ryoichi / Ono, Yukinori et al. | 2016
- 144
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Atomic-precision architectures for the high-fidelity spin read-out of phosphorus donors in siliconWeber, Bent / Watson, Thomas F. / Simmons, Michelle Y. et al. | 2016
- 146
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Ultra-low power and ultra-low voltage devices and circuits for IoT applicationsHiramoto, T. / Takeuchi, K. / Mizutani, T. / Ueda, A. / Saraya, T. / Kobayashi, M. / Yamamoto, Y. / Makiyama, H. / Yamashita, T. / Oda, H. et al. | 2016
- 148
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Confirmation of SS=35µV/dec over 3 decades of drain current and hole accumulation effect on PN-body tied SOI super steep SS FET'sHorii, Takashi / Ida, Jiro / Yoshida, Takahiro / Okihara, Masao / Arai, Yasuo et al. | 2016
- 150
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Negative capacitance as a performance booster for tunnel FETKobayashi, Masaharu / Jang, Kyungmin / Ueyama, Nozomu / Hiramoto, Toshiro et al. | 2016
- 152
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Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETsCutaia, Davide / Schmid, Heinz / Borg, Mattias / Moselund, Kirsten / Bologna, Nicolas / Olziersky, Antonis / Ionescu, Adrian / Riel, Heike et al. | 2016
- 154
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InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applicationsMemisevic, E. / Svensson, J. / Lind, E. / Wernersson, L.-E. et al. | 2016
- 156
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Device optimization on gate oxide and spacer dielectric permittivity for “well-tempered” nanoscale MOSFETJang, Esan / Shin, Sunhae / Jung, Jae Won / Jung, Yu Jung / Kim, Kyung Rok et al. | 2016
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Hetero-integration of GaSb channel on silicon with ultra-thin buffer utilizing interfacial misfit dislocationsJia, Bo Wen / Tan, Kian Hua / Loke, Wan Khai / Wicaksono, Satrio / Yoon, Soon Fatt et al. | 2016
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High quality Ge-OI, III–V-OI on 200 mm Si substrateLee, Kwang Hong / Lin, Yiding / Bao, Shuyu / Zhang, Li / Lee, Kenneth / Michel, Jurgen / Fitzgerald, Eugene / Tan, Chuan Seng et al. | 2016
- 164
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Development and electrical performance of low temperature Cu-Sn/In bonding for 3D flexible substate integrationHu, Yu-Chen / Chen, Kuan-Neng et al. | 2016
- 166
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Nonvolatile power-gating architecture for SRAM using SOTB technologyShuto, Y. / Yamamoto, S. / Sugahara, S. et al. | 2016
- 168
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PTM-based VT-variability analysis and compensation of a nanoscaled comparator circuit based on finfets and resistive switchesHeittmann, Arne / Noll, Tobias et al. | 2016
- 170
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Demonstration of standrad ternary inverter based on CMOS technologyShin, Sunhae / Jang, Esan / Jeong, Jae Won / Kim, Kyung Rok et al. | 2016
- 172
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Back biasing effects in a feedback steep switching device with charge spacerKim, Hyungjin / Hwang, Sungmin / Kwon, Dae Woong / Lee, Jong-Ho / Park, Byung-Gook et al. | 2016
- 174
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Capacitance matching effects in negative capacitnace field effect transistorJo, Jaesung / Khan, Asif Islam / Cho, Karam / Oh, Sangheon / Salahuddin, Sayeef / Shin, Changhwan et al. | 2016
- 176
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On gate stack scalability of Double-Gate Negative-Capacitance FET with ferroelectric HfO2 for energy-efficient sub-0.2V operationJang, Kyungmin / Saraya, Takuya / Kobayashi, Masaharu / Hiramoto, Toshiro et al. | 2016
- 178
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Evaluation of the origin of excited states appeared in small Si single-electron transistorsUchida, Takafumi / Arita, Masashi / Fujiwara, Akira / Takahashi, Yasuo / Jo, Mingyu / Satoh, Hikaru / Tsurumaki-Fukuchi, Atsushi et al. | 2016
- 180
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Investigation of the metal-insulator transition in VO2 for electronic switches with sub-1mV/decade steep subthreshold slopeVitale, Wolfgang A. / Moldovan, Clara F. / Paone, Antonio / Schuler, Andreas / Ionescu, Adrian M. et al. | 2016
- 182
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Cryogenic operation of SOI electron pumps and ring oscillatorsClapera, P. / Jehl, X. / Hutin, L. / Barraud, S. / Valentian, A. / De Franceschi, S. / Sanquer, M. / Vinet, M. et al. | 2016
- 186
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Highly sensitive pressure sensor with silicon-on-nothing (SON) MOSFET for sensor integrated heterogeneous systemKino, Hisashi / Fukushima, Takafumi / Tanaka, Tetsu et al. | 2016
- 188
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A possible threshold voltage definition of lateral tunnel FETMori, Yoshiaki / Sato, Shingo / Omura, Yasuhisa / Mallik, Abhijit et al. | 2016
- 190
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3D-TCAD simulation study of the contact all around T-FinFET structure for 10nm metal-oxide-semiconductor field-effect transistorChou, Chen-Han / Hsu, Chung-Chun / Yeh, Wen-Kuan / Chung, Steve S. / Chien, Chao-Hsin et al. | 2016
- 192
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Theoretical analysis of high-field hole transport in germanium and silicon nanowiresTanaka, Hajime / Suda, Jun / Kimoto, Tsunenobu et al. | 2016
- 194
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Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorusLiu, Fei / Wang, Jian / Guo, Hong et al. | 2016
- 196
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Evaulation the degradation in nMOSFETs with HfO2 gate dielectric and interfacial layer by 3D Kinetic Monte-Carlo methodLi, Yun / Lun, Zhiyuan / Wang, Yijiao / Huang, Peng / Jiang, Hai / Zhang, Xing / Du, Gang / Liu, Xiaoyan et al. | 2016
- 198
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Advanced simulation of resistance switching in Si-rich silica RRAM devicesSadi, Toufik / Wang, Liping / Asenov, Asen et al. | 2016
- 200
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Robust design of electric-field-assisted nonlocal Si-MOS spin-devicesKitagata, D. / Akushichi, T. / Takamura, Y. / Shuto, Y. / Sugahara, S. et al. | 2016
- 202
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New non-quasi-static (NQS) compact model for non-resonant plasmonic terahertz wave detector based on field-effect transistorRyu, Min Woo / Ahn, Sang Hyo / Kim, Kwan Sung / Kim, Kyung Rok et al. | 2016
- 204
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Performance evaluation of nanoscale FETs based on full-band complex bandstructure and real space poisson solverZhang, Xiaoyi / Yeo, Yee-Chia / Liang, Gengchiau et al. | 2016
- 206
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An analysis of stress evolution in stacked GAA transistorsReboh, Shay / Coquand, Remi / Augendre, Emmanuel / Barraud, Sylvain / Maitrejean, Sylvain / Vinet, Maud / Faynot, Olivier / Loubet, Nicolas / Guillorn, Michael / Fetterolf, Shawn et al. | 2016
- 208
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Physical transport simulation for path-finding and device optimizationKarner, M. / Stanojevic, Z. / Baumgartner, O. / Karner, HW. / Kernstock, C. / Demel, H. / Mitterbauer, F. et al. | 2016
- 212
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Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonicsKuo, Ming-Hao / Lee, M. C. / Tien, J. W. / Lai, Wei-Ting / Li, Pei-Wen et al. | 2016
- 214
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Metallurgical studies of integrable Ni-based contacts for their use in III–V/Si heterogeneous photonics devicesGhegin, E. / Nemouchi, F. / Perrin, C. / Hoummada, K. / Labar, J. / Zhiou, S. / Rodriguez, Ph. / Sagnes, I. / Jany, C. et al. | 2016
- 216
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High-performance silicon photonics process platform for low-power photonic integrated circuitsMogami, Tohru / Akiyama, Suguru / Baba, Takeshi / Okumura, Shigekazu / Fujikata, Junichi / Horikawa, Tsuyoshi / Kinoshita, Keizo et al. | 2016