Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications (English)
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2023 IEEE International Reliability Physics Symposium (IRPS)
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2023
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- Conference paper / Electronic Resource
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Title:Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications
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Contributors:Hsiang, K.-Y. ( author ) / Lee, J.-Y. ( author ) / Lou, Z.-F. ( author ) / Chang, F.-S. ( author ) / Li, Z.-X. ( author ) / Liu, C. W. ( author ) / Hou, T.-H. ( author ) / Su, P. ( author ) / Lee, M. H. ( author )
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Publication date:2023-03-01
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Depassivation of Traps in the Polysilicon Channel of 3D NAND Flash Arrays: Impact on Cell High-Temperature Data RetentionGiulianini, Mattia / Malavena, Gerardo / Chiavarone, Luca / Spinelli, Alessandro S. / Compagnoni, Christian Monzio et al. | 2023
- 1
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Front Matter| 2023
- 1
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Interval time dependent wake-up effect of HfZrO ferroelectric capacitorDing, Yaru / Yu, Xinwei / Yan, Chu / Weng, Zeping / Qu, Yiming / Zhao, Yi et al. | 2023
- 1
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Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applicationsGarba-Seybou, Tidjani / Federspiel, Xavier / Monsieur, Frederic / Sicre, Mathieu / Cacho, Florian / Hai, Joycelyn / Bravaix, Alain et al. | 2023
- 1
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Low-Frequency Noise Characteristics of Ferroelectric Field-Effect TransistorsPhadke, Omkar / Aabrar, Khandker Akif / Luo, Yuan-chun / Kirtania, Sharadindu Gopal / Khan, Asif Islam / Datta, Suman / Yu, Shimeng et al. | 2023
- 1
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Customized wafer level verification methodology: quality risk pre-diagnosis with enhanced screen-ability of stand-by stress-related deteriorationsYoon, Jiyoung / Lee, Bumgi / Song, Jaehee / Kang, Bokyoung / Lee, Sangho / Kwak, Doh-Soon / Lim, Heonsang / Park, Ilsang / Kim, Jonghoon / Pae, Sangwoo et al. | 2023
- 1
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Impact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type DevicesZhou, Huimei / Wang, Miaomiao / Loubet, Nicolas / Gaul, Andrew / Sulehria, Yasir et al. | 2023
- 1
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Radiation Hardened Flip-Flops with low Area, Delay and Power Overheads in a 65 nm bulk processSugitani, Shotaro / Nakajima, Ryuichi / Yoshida, Keita / Furuta, Jun / Kobayashi, Kazutoshi et al. | 2023
- 1
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Impact of via geometry and line extension on via-electromigration in nano-interconnectsSaleh, A. S. / Zahedmanesh, H. / Ceric, H. / De Wolf, I. / Croes, K. et al. | 2023
- 1
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GHz Cycle-to-Cycle Variation in Ultra-scaled FinFETs: From the Time-Zero to the Aging StatesQu, Yiming / Yan, Chu / Yu, Xinwei / Ding, Yaru / Zhao, Yi et al. | 2023
- 1
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Extremely Large Breakdown to Snapback Voltage Offset $(\mathrm{V}_{\mathrm{t}1} > > \mathrm{V}_{\text{BD}})$: Another Way to Improve ESD Resilience of LDMOS DevicesMishra, Aakanksha / Kumar, B. Sampath / Monishmurali, M. / Suzaad, Shaik Ahamed / Kumar, Shubham / Sanjay, Kiran Pote / Singh, Amit Kumar / Gupta, Ankur / Shrivastava, Mayank et al. | 2023
- 1
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TID Response of an Analog In-Memory Neural Network AcceleratorTolleson, B. / Bennett, C. / Xiao, T. Patrick / Wilson, D. / Short, J. / Kim, J. / Hughart, D. R. / Gilbert, N. / Agarwal, S. / Barnaby, H.J. et al. | 2023
- 1
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Unveiling Retention Physical Mechanism of Ge-rich GST ePCM TechnologyLaurin, L. / Baldo, M. / Petroni, E. / Samanni, G. / Turconi, L. / Motta, A. / Borghi, M. / Serafini, A. / Codegoni, D. / Scuderi, M. et al. | 2023
- 1
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Comprehensive study on prediction of endurance properties from breakdown voltage in high-reliable STT-MRAMSato, H. / Shin, H. M. / Jung, H. / Lee, S. W. / Bae, H. / Kwon, H. / Ryu, K. H. / Lim, W. C. / Han, Y. S. / Jeong, J. H. et al. | 2023
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Characterization of Backside ESD Impacts on Integrated CircuitsWadatsumi, Takuya / Kawai, Kohei / Hasegawa, Rikuu / Monta, Kazuki / Miki, Takuji / Nagata, Makoto et al. | 2023
- 1
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Demonstration on Warpage Estimation Approach Utilized in Fan-Out Panel-Level Packaging Enabled by Multi-Scale Process-Oriented SimulationWang, Chi-Wei / Chang, Che-Pei / Lee, Chang-Chun et al. | 2023
- 1
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Reliability challenges in Forksheet Devices: (Invited Paper)Bury, E. / Vandemaele, M. / Franco, J. / Chasin, A. / Tyaginov, S. / Vandooren, A. / Ritzenthaler, R. / Mertens, H. / Fortuny, J. Diaz / Horiguchi, N. et al. | 2023
- 1
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A New Ramp Stress Reliability Assessment on Pulse Energy Based OTS Switching OperationChang, P. C. / Liao, P. J. / Wu, C. H. / Chang, Y. C. / Hou, D. H. / Ambrosi, E. / Lee, H. Y. / Lee, J. H. / Bao Taiwan, X. Y. et al. | 2023
- 1
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Voltage Acceleration of Power NLDMOS Hot Carrier DegradationVashchenko, V.A. / Sarbishaei, H. et al. | 2023
- 1
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Full reliability characterization of three-terminal SOT-MTJ devices and corresponding arraysXu, Xinyi / Zhang, Hongchao / Jiang, Chuanpeng / Li, Jinhao / Lu, Shiyang / Li, Yunpeng / Du, Honglei / Zhang, Xueying / Wang, Zhaohao / Cao, Kaihua et al. | 2023
- 1
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Advanced Methods of Detecting Physical Damages in Packaging and BEOL InterconnectsMendoza, Jorge / Le, Jimmy-Bao / Kim, Choong-Un / Lin, Hung-Yun et al. | 2023
- 1
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A Novel Methodology to Predict Process-Induced Warpage in Advanced BEOL InterconnectsLin, Y.H. / Lee, C.C. / Liao, C.Y. / Lin, M.H. / Tu, W. C. / Chen, Robin / Chen, H.P. / Shue, Winston S. / Cao, Min et al. | 2023
- 1
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Investigation of Hot Carrier Enhanced Body Bias Effect in Advanced FinFET TechnologySun, Zixuan / Lu, Haoran / Xue, Yongkang / Luo, Wenpu / Wang, Zirui / Zhang, Jiayang / Ji, Zhigang / Wang, Runsheng / Huang, Ru et al. | 2023
- 1
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Ultra Long-term Measurement Results of BTI-induced Aging Degradation on 7-nm Ring OscillatorsKobayashi, Kazutoshi / Kishita, Tomoharu / Nakano, Hiroki / Furuta, Jun / Igarashi, Mitsuhiko / Kumashiro, Shigetaka / Yabuuchi, Michitarou / Sakamoto, Hironori et al. | 2023
- 1
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Reliability Assessment of 3nm GAA Logic Technology Featuring Multi-Bridge-Channel FETsKim, Seongkyung / Park, Hyerim / Choi, Eunyu / Kim, Young Han / Kim, Dahyub / Shim, Hyewon / Chung, Shinyoung / Jung, Paul et al. | 2023
- 1
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Investigation of Channel Dimension Dependence of BTI Degradation and Variation in Planar HKMG MOSFETZhang, S. Q. / Sun, Y. S. / Gao, D. / Jiang, H. / Yu, Z.Q. / Zheng, H. / Huang, J. L. et al. | 2023
- 1
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Enhanced DRAM Single Bit Characteristics from Process Control of ChlorineRim, Taiuk / Che, Kyosuk / Kwon, Sehyun / Lee, Jin-Seong / Oh, Jeonghoon / Ban, Hyodong / Lee, Jooyoung et al. | 2023
- 1
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Thermal Induced Retention Degradation of RRAM-based Neuromorphic Computing ChipsMa, Awang / Gao, Bin / Mou, Xing / Yao, Peng / Du, Yiwei / Tang, Jianshi / Qian, He / Wu, Huaqiang et al. | 2023
- 1
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3D Approaches to Engineer Holding Voltage of SCRGautam, Satendra Kumar / Variar, Harsha B / Luo, Juan / Shi, Ning / Marreiro, David / Mallikarjunaswamy, Shekar / Shrivastava, Mayank et al. | 2023
- 1
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Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variabilityMartin-Martinez, Javier / Diaz-Fortuny, Javier / Saraza-Canflanca, Pablo / Rodriguez, Rosana / Castro-Lopez, Rafael / Roca, Elisenda / Fernandez, Francisco V. / Nafria, Montserrat et al. | 2023
- 1
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Towards accurate temperature prediction in BEOL for reliability assessment (Invited)Lofrano, Melina / Oprins, Herman / Chang, Xinyue / Vermeersch, Bjorn / Pedreira, Olalla Varela / Lesniewska, Alicja / Cherman, Vladimir / Ciofi, Ivan / Croes, Kristof / Park, Seongho et al. | 2023
- 1
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Polarity Dependency of MOL-TDDB in FinFETSharma, Manisha / Park, Hokyung / Zhao, Yinghong / Lee, Ki-Don / Chen, Liangshan / Yoon, Joonah / Ranjan, Rakesh / Kwon, Caleb Dongkyan / Shim, Hyewon / Yeo, Myung Soo et al. | 2023
- 1
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Differentiated Silicon Technologies for mmwave 5G and 6G applications (Invited)Bandyopadhyay, Anirban et al. | 2023
- 1
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A Unified Aging Model Framework Capturing Device to Circuit Degradation for Advance Technology NodesMukhopadhyay, S. / Chen, C. / Jamil, M. / Standfest, J. / Meric, I. / Gill, B. / Ramey, S. et al. | 2023
- 1
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Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrationsVici, A. / Degraeve, R. / Roussel, P. J. / Franco, J. / Kaczer, B. / De Wolf, I. et al. | 2023
- 1
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Impact of Process Variation on MIM Capacitor LifetimeMelai, J. / Subramanian, V. / Pouwel, I. et al. | 2023
- 1
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A Physical Unclonable Function Leveraging Hot Carrier Injection AgingParker, Rachael J. / Velamala, Jyothi Bhaskarr A. / Shen, Kuan-Yueh James / Johnston, David / Chang, Yao-Feng / Ramey, Stephen M. / Wu, Siang-Jhih Sean / Penmatsa, Padma et al. | 2023
- 1
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Reliability of Memristive Devices for High-Performance Neuromorphic Computing: (Invited Paper)Xi, Yue / Li, Xinyi / Chen, Junhao / Hu, Ruofei / Zhang, Qingtian / Jiang, Zhixing / Xu, Feng / Tang, Jianshi et al. | 2023
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Performing Machine Learning Based Outlier Detection for Automotive Grade ProductsYang, Y.L. / Tsao, P.C. / Lin, C.W. / Lee, Ross / Ni, Olivia / Chen, T.T. / Ting, Y.J. / Lai, C.T. / Yeh, Jason / Yang, Arnold et al. | 2023
- 1
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Copyright and Reprint Permissions| 2023
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Multi Level Cell Reliability in Ge-rich GeSbTe-based Phase Change Memory ArraysMeli, V. / Navarro, G. / Rottner, J. / Castellani, N. / Martin, S. / Tran, N. P. / Bourgeois, G. / Sabbione, C. / Cyrille, M. C. et al. | 2023
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Impact of Non-Conducting HCI Degradation on Small-Signal Parameters in RF SOI MOSFETChaparro-Ortiz, Dora A. / Otero-Carrascal, Alan Y. / Gutierrez-D., Edmundo A. / Torres-Torres, Reydezel / Huerta-Gonzalez, Oscar / Srinivasan, P. / Guarin, Fernando et al. | 2023
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Polarity Dependency and 1/E Model of Gate Oxide TDDB Degradation in 3D NANDQu, Lina / Yang, Shengwei / He, Ming / Fang, Rui / Zhu, Xiaojuan / Han, Kun / He, Yi et al. | 2023
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Multi-finger turn-on: A potential cause of premature failure in Drain Extended HV Nanosheet DevicesJatin / Monishmurali, M. / Shrivastava, Mayank et al. | 2023
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A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMsVecchi, Sara / Pavan, Paolo / Puglisi, Francesco Maria et al. | 2023
- 1
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Classification of Commercial SiC-MOSFETs Based on Time-Dependent Gate-current CharacteristicsMurakami, E. / Takeshita, T. / Oda, K. / Kobayashi, M. / Asayama, K. / Okamoto, M. et al. | 2023
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Towards a Universal Model of Dielectric BreakdownPadovani, Andrea / Torraca, Paolo La / Strand, Jack / Shluger, Alexander / Milo, Valerio / Larcher, Luca et al. | 2023
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Semantic Autoencoder for Modeling BEOL and MOL Dielectric Lifetime DistributionsYan, Weiman / Wu, Ernest / Schwing, Alexander G. / Rosenbaum, Elyse et al. | 2023
- 1
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Protection Schemes for Plasma Induced Damage from Well-Side AntennasKuo, Hsi-Yu / Chu, Yu-Lin / Dai, Hung-Da / Wang, Chun-Chi / Lin, Pei-Jung / Guo, Ethan / Su, Yu-Ti / Hsu, Chia-Lin / Chen, Kuan-Hung / Chen, Tsung-Yuan et al. | 2023
- 1
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Microscopic Characterization of Failure Mechanisms in Long-Term Implanted Microwire Neural ElectrodesZhang, Z.J. / Li, Q. / Dong, Z.Y. / Wang, W.T. / Lai, S.T. / Yang, X. / Liang, F. / Wang, C.L. / Luo, C. / Lyu, L.J. et al. | 2023
- 1
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RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applicationsSrinivasan, P. / Lestage, J. / Syed, S. / Hui, X. / Moss, S. / Restrepo, O. D. / Gonzalez, O. H. / Chen, Y. / McKay, T. / Bandyopadhyay, A. et al. | 2023
- 1
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Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETsKim, Dongyoung / DeBoer, Skylar / Mancini, Stephen A / Isukapati, Sundar Babu / Lynch, Justin / Yun, Nick / Morgan, Adam J / Jang, Seung Yup / Sung, Woongje et al. | 2023
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Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization DynamicsHamai, Takamasa / Suzuki, Kunifumi / Ichihara, Reika / Higashi, Yusuke / Yoshimura, Yoko / Sakuma, Kiwamu / Ota, Kensuke / Takahashi, Kota / Matsuo, Kazuhiro / Fujii, Shosuke et al. | 2023
- 1
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V-Ramp test and gate oxide screening under the “lucky” defect modelCheung, Kin P et al. | 2023
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Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN BufferJoshi, Vipin / Gupta, Sayak Dutta / Chaudhuri, Rajarshi Roy / Shrivastava, Mayank et al. | 2023
- 1
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SiC MOSFET threshold voltage stability during power cycling testing and the impact on the result interpretationSchwabe, Christian / Liu, Xing / Wassermann, Tobias N. / Salmen, Paul / Basler, Thomas et al. | 2023
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Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETsShi, Limeng / Zhu, Shengnan / Qian, Jiashu / Jin, Michael / Bhattacharya, Monikuntala / White, Marvin H. / Agarwal, Anant K. / Shimbori, Atsushi / Liu, Tianshi et al. | 2023
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Enhancing reliability of a strong physical unclonable function (PUF) solution based on virgin-state phase change memory (PCM)Cattaneo, L. / Baldo, M. / Lepri, N. / Sancandi, F. / Borghi, M. / Petroni, E. / Serafini, A. / Annunziata, R. / Redaelli, A. / Ielmini, D. et al. | 2023
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A Novel Data Recovery Technique for 3D TLC NAND Flash Memory Using Intercell ProgramChou, Y. L. / Tsai, W. J. / Wu, G. W. / Chang, W. / Lu, T. C. / Chen, K. C. / Lu, C. Y. et al. | 2023
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Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliabilityReganaz, L. / Deleruyelle, D. / Rafhay, Q. / Minguet Lopez, J. / Castellani, N. / Nodin, J. F. / Bricalli, A. / Piccolboni, G. / Molas, G. / Andrieu, F. et al. | 2023
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Localized thermal effects in Gate-all-around devicesLandon, Colin / Jiang, Lei / Pantuso, Daniel / Meric, Inanc / Komeyli, Kam / Hicks, Jeffrey / Schroeder, Daniel et al. | 2023
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A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit testsWieland, D. / Ofner, S. / Stabentheiner, M. / Butej, B. / Koller, C. / Sun, J. / Minetto, A. / Reiser, K. / Haberlen, O. / Nelhiebel, M. et al. | 2023
- 1
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Scaling Trends and the Effect of Process Variations on the Soft Error Rate of advanced FinFET SRAMsNarasimham, B. / Luk, H. / Paone, C. / Montoya, A-R. / Riehle, T. / Smith, M. / Tsau, L. et al. | 2023
- 1
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The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology: (Student paper)Sangani, D. / Diaz-Fortuny, J. / Bury, E. / Kaczer, B. / Gielen, G. et al. | 2023
- 1
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Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)Narita, Tetsuo / Kikuta, Daigo / Ito, Kenji / Shoji, Tomoyuki / Mori, Tomohiko / Yamaguchi, Satoshi / Kimoto, Yasuji / Tomita, Kazuyoshi / Kanechika, Masakazu / Kondo, Takeshi et al. | 2023
- 1
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Effects of Collected Charge and Drain Area on SE Response of SRAMs at the 5-nm FinFET NodePieper, N.J. / Xiong, Y. / Ball, D.R. / Pasternak, J. / Bhuva, B.L. et al. | 2023
- 1
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Reliability Improvement with Optimized BEOL Process in Advanced DRAMLee, J.H. / Woo, B.W. / Lee, Y.M. / Lee, N.H. / Lee, SH. / Lee, YS. / Kim, HS. / Pae, S. et al. | 2023
- 1
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Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited PaperVandemaele, Michiel / Kaczer, Ben / Bury, Erik / Franco, Jacopo / Chasin, Adrian / Makarov, Alexander / Mertens, Hans / Hellings, Geert / Groeseneken, Guido et al. | 2023
- 1
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Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection ConceptVariar, Harsha B / Gautam, Satendra Kumar / Kumar, Ashita / Amogh, K M / Luo, Juan / Shi, Ning / Marreiro, David / Mallikarjunaswamy, Shekar / Shrivastava, Mayank et al. | 2023
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The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors AgingBenatti, Lorenzo / Vecchi, Sara / Pesic, Milan / Puglisi, Francesco Maria et al. | 2023
- 1
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Investigation of Sub-20nm 4th generation DRAM cell transistor's parasitic resistance and scalable methodology for Sub-20nm eraJeong, Shinwoo / Lee, Jin-Seong / Jang, Jiuk / Kim, Jooncheol / Shin, Hyunsu / Kim, Ji Hun / Song, Jeongwoo / Woo, Dongsoo / Oh, Jeonghoon / Lee, Jooyoung et al. | 2023
- 1
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TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD ProtectionZunarelli, Laura / Balestra, Luigi / Reggiani, Susanna / Sankaralingam, Raj / Dissegna, Mariano / Boselli, Gianluca et al. | 2023
- 1
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Reliability of 3D NAND Flash for Future Storage Systems (Invited)Goda, Akira / Muchherla, Kishore Kumar / Feeley, Peter et al. | 2023
- 1
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Reliability Modeling of Middle-Of-Line Interconnect Dielectrics in Advanced process nodesKasim, R. / Lin, C. / Perini, C. / Palmer, J. / Gilda, N. / Imam, S. / Weber, J. R. / Wallace, C. / Hicks, J. et al. | 2023
- 1
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Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTsMir, Mehak Ashraf / Joshi, Vipin / Chaudhuri, Rajarshi Roy / Munshi, Mohammad Ateeb / Malik, Rasik Rashid / Shrivastava, Mayank et al. | 2023
- 1
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GaN HEMTs Design and Modeling for 5GLiu, Yueying / Wood, John / Hu, Zongyang / Ganguly, Satyaki / Fisher, Jeremy / Watts, Mike / Sheppard, Scott / Gajewski, Don / Noori, Basim et al. | 2023
- 1
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High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor TrapsFavero, D. / Cavaliere, A. / De Santi, C. / Borga, M. / Filho, W. Goncalez / Geens, K. / Bakeroot, B. / Decoutere, S. / Meneghesso, G. / Zanoni, E. et al. | 2023
- 1
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Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and MitigationZhou, Longda / Li, Jie / Qiao, Zheng / Ren, Pengpeng / Sun, Zixuan / Wang, Jianping / Wu, Blacksmith / Ji, Zhigang / Wang, Runsheng / Cao, Kanyu et al. | 2023
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Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw DislocationsVan Brunt, E. / Lichtenwalner, D. J. / Park, J. H. / Ganguly, S. / McPherson, J. W. et al. | 2023
- 1
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A New Methodology to Precisely Induce Wake-Up for Reliability Assessment of Ferroelectric DevicesTan, Tiang Teck / Wang, Yu-Yun / Tan, Joel / Wu, Tian-Li / Raghavan, Nagarajan / Pey, Kin Leong et al. | 2023
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Estimation of SOH Degradation of Coin Cells Subjected to Accelerated Life Cycling with Randomized Cycling Depths and C-RatesLall, Pradeep / Soni, Ved / Sethi, Guneet / Yiang, Kok et al. | 2023
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A World First QLC RRAM: Highly Reliable Resistive-Gate Flash with Record 108 Endurance and Excellent RetentionLi, M. Y. / Lee, J. P. / Liu, C. H. / Guo, J. C. / Chung, Steve S. et al. | 2023
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Effect of Frequency on Reliability Of High-K MIM CapacitorsFederspiel, X. / Griffon, A. / Barlas, M. / Lamontagne, P. et al. | 2023
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Material instabilities in the TaOx-based resistive switching devices (Invited)Skowronski, M. et al. | 2023
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Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETsPanarella, L. / Kaczer, B. / Smets, Q. / Verreck, D. / Schram, T. / Cott, D. / Lin, D. / Tyaginov, S. / Asselberghs, I. / de la Rosa, C. Lockhart et al. | 2023
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Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applicationsSaid, N. / Harrouche, K. / Medjdoub, F. / Labat, N. / Tartarin, J.G. / Malbert, N. et al. | 2023
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Stress Migration of Aluminum Backside Interconnect in Xtacking®Yang, Kang / Yang, Suhui / Ouyang, Yan / Yang, Shengwei / Han, Kun / He, Yi et al. | 2023
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Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of VariabilityBogner, Christian / Schlunder, Christian / Waltl, Michael / Reisinger, Hans / Grasser, Tibor et al. | 2023
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Self-Heating Aware Threshold Voltage Modulation Conforming to Process and Ambient Temperature Variation for Reliable Nanosheet FETRathore, Sunil / Jaisawal, Rajeewa Kumar / Kondekar, P. N. / Gandhi, Navneet / Banchhor, Shashank / Song, Young Suh / Bagga, Navjeet et al. | 2023
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A detailed comparison of various off-state breakdown methodologies for scaled Tri-gate technologiesJoshi, K. / Nminibapiel, D. / Ghoneim, M. / Ali, D. / Ramamurthy, R. / Pantisano, L. / Meric, I. / Ramey, S. et al. | 2023
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Short-Flow Compatible Wafer-Level Reliability Assessment and Monitoring for PCM Embedded Non-Volatile MemoryLunenborg, Meindert / Brozek, Tomasz / Lorenzi, Laura / Dolainsky, Christoph / Liu, Violet / Feng, Xiaoyi et al. | 2023
- 1
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Near Zero Field Magnetoresistance Spectroscopy: A New Tool in Semiconductor Reliability PhysicsLenahan, P. M. / Frantz, E. B. / King, S. W. / Anders, M. A. / Moxim, S. J. / Ashton, J. P. / Myers, K. J. / Flatte, M. E. / Harmon, N. J. et al. | 2023
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Current Injection Effect on ESD Behaviors of the Parasitic Bipolar Transistors inside P+/N-well diodeWang, Hui / Lai, Pengyu / Chen, Zhong et al. | 2023
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Towards the understanding of ferroelectric-intrinsic variability and reliability issues on MCAMWu, Yishan / Cai, Puyang / Liu, Zhiwei / Ren, Pengpeng / Ji, Zhigang et al. | 2023
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Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited)Vandendaele, W. / Leurquin, C. / Lavieville, R. / Jaud, M.A / Viey, A.G. / Gwoziecki, R. / Mohamad, B. / Nowak, E. / Constant, A. / Iucolano, F. et al. | 2023
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Reliability Characterization of HBM featuring $\text{HK}+\text{MG}$ Logic Chip with Multi-stacked DRAMsHa, Sungmock / Lee, S. / Bae, GH. / Lee, DS. / Kim, S.H. / Woo, BW. / Lee, N-H / Lee, YS. / Pae, S. et al. | 2023
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Impact of Trapped Charge Vertical Loss and Lateral Migration on Lifetime Estimation of 3-D NAND Flash MemoriesLiu, Y. H. / Zhan, T. C. / Yang, Y. S. / Hsu, C. C. / Liu, A. C. / Lin, W. et al. | 2023
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Backhopping-based STT-MRAM Poisson Spiking Neuron for Neuromorphic ComputationTan, J. / Lim, J.H. / Kwon, J.H. / Naik, V.B. / Raghavan, N. / Pey, K.L. et al. | 2023
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Wafer Level Chip Scale Package Failure Mode Prediction using Finite Element ModelingDudash, Viktor / Machani, Kashi Vishwanath / Boehme, Bjoern / Capecchi, Simone / Ok, Jungtae / Meier, Karsten / Kuechenmeister, Frank / Wieland, Marcel / Bock, Karlheinz et al. | 2023
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Extended Analysis of Power Cycling Behavior of TO-Packaged SiC Power MOSFETsKovacevic-Badstuebner, Ivana / Race, Salvatore / Grossner, Ulrike / Mengotti, Elena / Kenel, Christoph / Bianda, Enea / Jormanainen, Joni et al. | 2023
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Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2 FETsPatbhaje, Utpreksh / Verma, Rupali / Kumar, Jeevesh / Ansh / Shrivastava, Mayank et al. | 2023
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Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTsMalik, Rasik Rashid / Joshi, Vipin / Chaudhuri, Rajarshi Roy / Mir, Mehak Ashraf / Khan, Zubear / Shaji, Avinas N / Bhattacharya, Madhura / Vitthal, Anup T. / Shrivastava, Mayank et al. | 2023
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Studying the Impact of Temperature Gradient on Electromigration Lifetime Using a Power Grid Test Structure with On-Chip HeatersYi, Yong Hyeon / Kim, Chris / Zhou, Chen / Kteyan, Armen / Sukharev, Valeriy et al. | 2023
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Impact of Design and Process on Alpha-Induced SER in 4 nm Bulk-FinFET SRAMUemura, Taiki / Chung, Byungjin / Chung, Shinyoung / Lee, Seungbae / Hwang, Yuchul / Pae, Sangwoo et al. | 2023
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Characterization and modeling of DCR and DCR drift variability in SPADsSicre, M. / Federspiel, X. / Mamdy, B. / Roy, D. / Calmon, F. et al. | 2023
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Current Scalability Issues in Multi-Bank 5V PMOS ESD structures: Root cause and Design GuidelineKranthi, Nagothu Karmel / Xiu, Yang / Xiao, Yang / Sankaralingam, Rajkumar et al. | 2023
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Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-VSeki, Harumi / Ichihara, Reika / Higashi, Yusuke / Nakasaki, Yasushi / Saitoh, Masumi / Suzuki, Masamichi et al. | 2023
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Characterizing SEU Cross Sections of 12- and 28-nm SRAMs for 6.0, 8.0, and 14.8 MeV NeutronsTakami, Kazusa / Gomi, Yuibi / Abe, Shin-Ichiro / Liao, Wang / Manabe, Seiya / Matsumoto, Tetsuro / Hashimoto, Masanori et al. | 2023
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Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10KDi Santa Maria, F. Serra / Balestra, F. / Theodorou, C. / Ghibaudo, G. / Zota, C. B. / Cha, E. et al. | 2023
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Soft- and Hard-Error Radiation Reliability of 228 KB $3\mathrm{T}+1\mathrm{C}$ Oxide Semiconductor MemoryTakahashi, H. / Okamoto, Y. / Hamada, T. / Komura, Y. / Watanabe, S. / Tsuda, K. / Sawai, H. / Matsuzaki, T. / Ando, Y. / Onuki, T. et al. | 2023
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Impact of Barrier Metal Thickness on SRAM ReliabilityRanjan, Rakesh / Perepa, Pavitra Ramadevi / Lee, Ki-Don / Park, Hokyung / Kim, Peter / Yerubandi, Ganesh Chakravarthy / Haefner, Jon / Kwon, Caleb Dongkyun / Jin, Min-Jung / Zhou, Wenhao et al. | 2023
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GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency ModelYu, Xinwei / Yan, Chu / Ding, Yaru / Qu, Yiming / Zhao, Yi et al. | 2023
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A Concise Electrothermal Model to Characterize the Thermal Safe-Operating Area of Power TransistorLee, Jian-Hsing / Lin, Gong-Kai / Chen, Chun-Chih / Chen, Li-Fan / Wang, Chien-Wei / Huang, Shao-Chang / Li, Ching-Ho / Liao, Chih-Cherng / Chuang, Jung-Tsun / Chen, Ke-Horng et al. | 2023
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Reliability Challenges from 2.5D to 3DIC in Advanced Package DevelopmentLu, Ryan / Chuang, Yao-Chun / Wu, Jyun-Lin / He, Jun et al. | 2023
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Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFETZhang, Xinyi / Wang, Kewei / Wang, Fang / Li, Jiangjiang / Wu, Zhicheng / Li, Duoli / Li, Bo / Bu, Jianhui / Han, Zhengsheng et al. | 2023
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Write Recovery Time Degradation by Thermal Neutrons in DDR4 DRAM ComponentsOh, Hyeongseok / Chun, Myungsun / Lee, Jiwon / Wen, Shi-Jie / Yu, Nick / Park, Byung-Gun / Baeg, Sanghyeon et al. | 2023
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Machine Learning Based V-ramp VBD Predictive Model Using OCD-measured Fab Parameters for Early Detection of MOL Reliability RiskRhee, Sungman / Kim, Hyunjin / Park, Sangku / Uemura, Taiki / Hwang, Yuchul / Choo, Seungjin / Kim, Jinju / Rhee, Hwasung / Chung, Shinyoung et al. | 2023
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Backside Failure Analysis of IGBT power devices assembled in STPAKVitanza, E. / Realmuto, C. / La Marca, M. / Torrisi, L. et al. | 2023
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Towards Chip-Package-System Co-optimization of Thermally-limited System-On-Chips (SOCs)Mishra, S. / Sankatali, V. / Vermeersch, B. / Brunion, M. / Lofrano, M. / Abdi, D. / Oprins, H. / Biswas, D. / Zografos, O. / Hiblot, G. et al. | 2023
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Industrial approach to the chip and package reliability of SiC MOSFETs (Invited)Mengotti, Elena / Bianda, Enea / Baumann, David / Schlottig, Gerd / Canales, Francisco et al. | 2023
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Reliability of InGaZnO Transparent ReRAM with Optically Active Pt-NanodisksVishwakarma, Kavita / Kishore, Rishabh / Gora, Suman / Jangra, Mandeep / Datta, Arnab et al. | 2023
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Electrostatic Shielding of NAND Flash Memory from Ionizing RadiationBuddhanoy, Matchima / Ray, Biswajit et al. | 2023
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Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress OperationDiaz-Fortuny, Javier / Sangani, Dishant / Saraza-Canflanca, Pablo / Bury, Erik / Degraeve, Robin / Kaczer, Ben et al. | 2023
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Circuit Reliability of $\text{MoS}_{2}$ Channel Based 2D TransistorsRai, Anand Kumar / Variar, Harsha B. / Shrivastava, Mayank et al. | 2023
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ESD Avalanche Diodes Degradation in EOS RegimeSarbishaei, Hossein / Vashchenko, Vladislav et al. | 2023
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Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETsKumar, Akhil S. / Uren, Michael J. / Smith, Matthew D. / Kuball, Martin / Parke, Justin / Henry, H. George / Howell, Robert S. et al. | 2023
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Investigation on NBTI Control Techniques of HKMG Transistors for Low-power DRAM applicationsSung, Won Ju / Kim, Hyun Seung / Han, Jung Hoon / Park, Se Guen / Oh, Jeong-Hoon / Ban, Hyodong / Lee, Jooyoung et al. | 2023
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Knowledge Based Qualification for Thermal Interface Material ReliabilityArmagan, E. / Saha, A. / Liu, K.C. / Gebrehiwot, B. / Cartas, M. / Das, A. / Rawlings, T. / Raghavan, P. et al. | 2023
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The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case StudyMoens, P. / Geenen, F. / De Schepper, L. / Cano, JF / Lettens, J. / Maslougkas, S. / Franchi, J. / Domeij, M. et al. | 2023
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Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTsLeurquin, C. / Vandendaele, W. / Gwoziecki, R. / Mohamad, B. / Despesse, G. / Iucolano, F. / Modica, R. / Constant, A. et al. | 2023
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Soft Error Rate Predictions for Terrestrial Neutrons at the 3-nm Bulk FinFET TechnologyXiong, Yoni / Chiang, Yueh / Pieper, Nicholas J. / Ball, Dennis R. / Bhuva, Bharat L. et al. | 2023
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MTJ degradation in multi-pillar SOT-MRAM with selective writingVan Beek, Simon / Cai, Kaiming / Fan, Kaiquan / Talmelli, Giacomo / Trovato, Anna / Jossart, Nico / Rao, Siddharth / Chasin, Adrian / Couet, Sebastien et al. | 2023
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A Physics-based Model for Long Term Data Retention Characteristics in 3D NAND Flash MemorySaikia, Rashmi / Ansari, Aseer / Mahapatra, Souvik et al. | 2023
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In-Product BTI Aging Sensor for Reliability Screening and Early Detection of Material at RiskBrozek, Tomasz / Piadena, Alberto / Weiland, Larg / Quarantelli, Michele / Coccoli, Alberto / Saxena, Sharad / Hess, Christopher / Strojwas, Andrzej et al. | 2023
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Cross-coupled Self-Heating and Consequent Reliability Issues in GaN-Si Hetero-integration: Thermal Keep-Out-Zone QuantifiedSruthi, M P / Zaman Mamun, M. Asaduz / Nair, Deleep R / Chakravorty, Anjan / DasGupta, Nandita / DasGupta, Amitava / Alam, Muhammad Ashraful et al. | 2023
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Nickel Silicide Electromigration on Micro Ring Modulators for Silicon Photonics TechnologyMcGowan, Brian T. / Rakowski, Michal / Choi, Seungman et al. | 2023
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Reliability of SPST Series-stacked SOI CMOS RF Switches for mmWave ApplicationsRathi, Aarti / Dixit, Abhisek / Satish, Naga / Srinivasan, P. / Guarin, Fernando et al. | 2023
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Silicon based degradation model for various types of highly integrated MOL resistor devicesThiessen, A. / Haack, M. / Herklotz, M. et al. | 2023
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Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability ConsequencesChaudhuri, Rajarshi Roy / Joshi, Vipin / Gupta, Amratansh / Joshi, Tanmay / Malik, Rasik Rashid / Mir, Mehak Ashraf / Gupta, Sayak Dutta / Shrivastava, Mayank et al. | 2023
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Monolithic 3D Integrated BEOL Dual-Port Ferroelectric FET to Break the Tradeoff Between the Memory Window and the Ferroelectric ThicknessPrakash, Om / Ni, Kai / Amrouch, Hussam et al. | 2023
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Voltage Ramp Stress Test Optimization for Wafer Level Hot Carrier Monitoring in FinFETZhao, Ri-an / Koskinen, Matthew / Liu, Yang / Wan, Xinggong et al. | 2023
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Dynamic On-State Resistance in SiC MOSFETsGreen, R. / Lelis, A. / Urciuoli, D. / Schroen, E. / Habersat, D. et al. | 2023
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Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTsCioni, M. / Giorgino, G. / Chini, A. / Miccoli, C. / Castagna, M. E. / Moschetti, M. / Tringali, C. / Iucolano, F. et al. | 2023
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Transient Leakage Current as a Non-destructive Probe of Wire-bond Electrochemical FailuresMamun, M. Asaduz Zaman / Mavinkurve, Amar / van Soestbergen, Michiel / Alam, Muhammad A. et al. | 2023
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Innovative reliability solution for WLCSP packagesBidaj, Klodjan / Gateka, Lauriane / Ardaillon, Benjamin et al. | 2023
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Excellent Reliability performances of a truly 5V nBOXFET for Automotive and IOT applicationsLipp, D. / Zhao, Z. / Krause, G. / Arfaoui, W. / Ebrard, E. / Bossu, G. / Evseev, S. / Herklotz, M. / Siddabathula, M. et al. | 2023
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Insight Into HCI Reliability on I/O Nitrided DevicesDoyen, C. / Yon, V. / Garros, X. / Basset, L. / Frutuoso, T. Mota / Dagon, C. / Diouf, C. / Federspiel, X. / Millon, V. / Monsieur, F. et al. | 2023
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Risk Management Informed by an Uncertain Bathtub Curve (Invited)Jopling, Jason et al. | 2023
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A pragmatic network-aware paradigm for system-level electromigration predictions at scaleZahedmanesh, Houman / Roussel, Philippe / Ciofi, Ivan / Croes, Kristof et al. | 2023
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Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniquesFregolent, Manuel / Marcuzzi, Alberto / De Santi, Carlo / Treidel, Eldad Bahat / Meneghesso, Gaudenzio / Zanoni, Enrico / Meneghini, Matteo et al. | 2023
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Characterizing BTI and HCD in 1.2V 65nm CMOS Oscillators made from Combinational Standard Cells and Processor Logic Pathsvan Santen, Victor M. / Gata-Romero, Jose M. / Nunez, Juan / Castro-Lopez, Rafael / Roca, Elisenda / Amrouch, Hussam et al. | 2023
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Carrot-like crystalline defects on the 4H-SiC powerMOSFET yield and reliabilityCarbone, B. / Alessandrino, M. S. / Russo, A. / Vitanza, E. / Giannazzo, F. / Fiorenza, P. / Roccaforte, F. et al. | 2023
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Thermomigration-induced void formation in Cu-interconnects - Assessment of main physical parametersDing, Y. / Pedreira, O. Varela / Lofrano, M. / Zahedmanesh, H. / Chavez, T. / Farr, H. / De Wolf, I. / Croes, K. et al. | 2023
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Decomposition of Vertical and Lateral Charge Loss in Long-term Retention of 3-D NAND Flash MemoryPark, Jounghun / Yoon, Gilsang / Go, Donghyun / Kim, Donghwi / An, Ukju / Kim, Jongwoo / Kim, Jungsik / Lee, Jeong-Soo et al. | 2023
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The Correct Hot Carrier Degradation ModelBernstein, J. B. / Bender, E. / Bensoussan, A. et al. | 2023
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Insights into device and material origins and physical mechanisms behind cross temperature in 3D NANDPesic, Milan / Beltrando, Bastien / Rollo, Tommaso / Zambelli, Cristian / Padovani, Andrea / Micheloni, Rino / Maji, Rita / Enman, Lisa / Saly, Mark / Bae, Yang Ho et al. | 2023
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Collector Engineering of ESD PNP in BCD TechnologiesZhou, Yujie / LaFonteese, David / Rosenbaum, Elyse et al. | 2023
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OFF State Reliability Challenges of Monolayer WS2 FET Photodetector: Impact on the Dark and Photo-Illuminated StateVerma, Rupali / Patbhaje, Utpreksh / Kumar, Jeevesh / Rai, Anand Kumar / Shrivastava, Mayank et al. | 2023
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Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3 Based Vertical Schottky Barrier DiodesRaj, Harsh / Joshi, Vipin / Chaudhuri, Rajarshi Roy / Malik, Rasik Rashid / Shrivastava, Mayank et al. | 2023
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Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETsFiorenza, P. / Cordiano, F. / Alessandrino, S. M. / Russo, A. / Zanetti, E. / Saggio, M. / Bongiorno, C. / Giannazzo, F. / Roccaforte, F. et al. | 2023
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Recent Advances on Electromigration in Cu/SiO2 to Cu/SiO2 Hybrid Bonds for 3D Integrated CircuitsMoreau, S. / Bouchu, D. / Jourdon, J. / Ayoub, B. / Lhostis, S. / Fremont, H. / Lamontagne, P. et al. | 2023
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Optimization of SCR for High-Speed Digital and RF Applications in 45-nm SOI CMOS TechnologyHuang, Shudong / Parthasarathy, Srivatsan / Zhou, Yuanzhong Paul / Hajjar, Jean-Jacques / Rosenbaum, Elyse et al. | 2023
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Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing ApplicationsHsiang, K.-Y. / Lee, J.-Y. / Lou, Z.-F. / Chang, F.-S. / Li, Z.-X. / Liu, C. W. / Hou, T.-H. / Su, P. / Lee, M. H. et al. | 2023
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Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETsFeil, Maximilian W. / Waschneck, Katja / Reisinger, Hans / Berens, Judith / Aichinger, Thomas / Salmen, Paul / Rescher, Gerald / Gustin, Wolfgang / Grasser, Tibor et al. | 2023
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Reliable FeFET-based Neuromorphic Computing through Joint Modeling of Cycle-to-Cycle Variability, Device-to-Device Variability, and Domain StochasticityThomann, Simon / Mema, Albi / Ni, Kai / Amrouch, Hussam et al. | 2023
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Reliability Studies on Advanced FinFET Transistors of the Intel 4 CMOS TechnologyJamil, M. / Mukhopadhay, S. / Ghoneim, M. / Shailos, A. / Prasad, C. / Meric, I. / Ramey, S. et al. | 2023
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The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI TechnologyWang, Yuchong / Chen, Siyuan / Liu, Fanyu / Li, Bo / Li, Jiangjiang / Huang, Yang / Zhang, Tiexin / Zhang, Xu / Han, Zhengsheng / Ye, Tianchun et al. | 2023
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Atomic-level Insight and Quantum Chemistry of Ambient Reliability Issues of the TMDs DevicesKumar, Jeevesh / Kuruva, Hemanjaneyulu / Variar, Harsha B. / Patbhaje, Utpreksh / Shrivastava, Mayank et al. | 2023
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ReRAM CiM Fluctuation Pattern Classification by CNN Trained on Artificially Created DatasetYamada, Ayumu / Misawa, Naoko / Matsui, Chihiro / Takeuchi, Ken et al. | 2023
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Impact of Thin-oxide Gate on the On-Resistance of HV-PNP Under ESD StressM, Monishmurali / Kranthi, Nagothu Karmel / Boselli, Gianluca / Shrivastava, Mayank et al. | 2023
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Write-error-rate of Spin-Transfer-Torque MRAM (Invited)Worledge, Daniel C. et al. | 2023
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Analysis of Intermittent Single-bit Failure on 10-nm node generation DRAM DevicesSeo, Hyewon / Rim, Taiuk / Lee, Eunsun / Jang, Sekyoung / Chae, Kyosuk / Oh, Jeonghoon / Ban, Hyodong / Lee, Jooyoung et al. | 2023
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Neuromorphic Computation-in-Memory System (Invited)Takeuchi, Ken et al. | 2023
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Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technologySaraza-Canflanca, P. / Diaz-Fortuny, J. / Vici, A. / Bury, E. / Degraeve, R. / Kaczer, B. et al. | 2023
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Impact of Phase-Change Memory Drift on Energy Efficiency and Accuracy of Analog Compute-in-Memory Deep Learning Inference (Invited)Frank, Martin M. / Li, Ning / Rasch, Malte J. / Jain, Shubham / Chen, Ching-Tzu / Muralidhar, Ramachandran / Han, Jin-Ping / Narayanan, Vijay / Philip, Timothy M. / Brew, Kevin et al. | 2023
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Development and Product Reliability Characterization of Advanced High Speed 14nm DDR5 DRAM with On-die ECCLee, S. / Lee, N-H / Lee, KW. / Kim, JH. / Jin, JH. / Lee, YS. / Hwang, YC / Kim, HS. / Pae, S. et al. | 2023
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Integrated Test Circuit for Off-State Dynamic Drain Stress EvaluationHai, J. / Cacho, F. / Federspiel, X. / Garba-Seybou, T. / Divay, A. / Lauga-Larroze, E. / Arnould, J.-D. et al. | 2023
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The Effects of Process Variations and BTI in Packaged FinFET DevicesBender, E. / Bernstein, J. B. / Boning, D. S. et al. | 2023
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Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETsZhu, Shengnan / Shi, Limeng / Jin, Michael / Qian, Jiashu / Bhattacharya, Monikuntala / Rao Maddi, Hema Lata / White, Marvin H. / Agarwal, Anant K. / Liu, Tianshi / Shimbori, Atsushi et al. | 2023
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Effect of Precursor Defects in Oxide Layer on Ionizing Radiation Damage of Bipolar Junction TransistorsLiu, Fengkai / Wu, Lei / Wang, Kai / Guan, Enhao / Li, Xingji et al. | 2023
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High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC DiodesJi, In-Hwan / Mathew, Anoop / Park, Jae-Hyung / Oldham, Neal / McCain, Matthew / Sabri, Shadi / Van Brunt, Edward / Hull, Brett / Lichtenwalner, Daniel J. / Gajewski, Donald A. et al. | 2023
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Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited)Grenouillet, L. / Barbot, J. / Laguerre, J. / Martin, S. / Carabasse, C. / Louro, M. / Bedjaoui, M. / Minoret, S. / Kerdiles, S. / Boixaderas, C. et al. | 2023
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A 13-bit Radiation-Hardened SAR-ADC with Error Correction by Adaptive Topology TransformationAoki, Yuya / Iwata, Tatsuya / Miki, Takuji / Kobayashi, Kazutoshi / Yoshikawa, Takefumi et al. | 2023
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Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life testsGao, Zhan / Chiocchetta, Francesca / Rampazzo, Fabiana / De Santi, Carlo / Fornasier, Mirko / Meneghesso, Gaudenzio / Meneghini, Matteo / Zanoni, Enrico et al. | 2023
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Analysis of SSD Acoustic Noise Generation Mechanism depending on NAND operationCinar, Yusuf / Kim, Junghoon / Oh, Eunho / Lee, Sungki / Kwon, Changsik / Park, Jonggyu et al. | 2023
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Investigation of Safe Operating Area on 4H-SiC 600V VDMOSFET with TLP and UIS Test MethodsKe, Chao-Yang / Tsui, Yu-Chia / Tsui, Bing-Yue / Ker, Ming-Dou et al. | 2023
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Signal duration sensitive degradation in scaled devicesBersuker, G. / Tang, E. / Veksler, D. et al. | 2023