Photoluminescence enhancement through vertical stacking of defect-engineered Ge on Si quantum dots (English)
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Letter
- New search for: Heiko Groiss
- New search for: Lukas Spindlberger
- New search for: Peter Oberhumer
- New search for: Friedrich Schäffler
- New search for: Thomas Fromherz
- New search for: Martyna Grydlik
- New search for: Moritz Brehm
- New search for: Heiko Groiss
- New search for: Lukas Spindlberger
- New search for: Peter Oberhumer
- New search for: Friedrich Schäffler
- New search for: Thomas Fromherz
- New search for: Martyna Grydlik
- New search for: Moritz Brehm
In:
Semiconductor Science and Technology
;
32
, 2
;
02LT01
;
2017
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Photoluminescence enhancement through vertical stacking of defect-engineered Ge on Si quantum dots
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Subtitle:Letter
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Additional title:Photoluminescence enhancement through vertical stacking of defect-engineered Ge on Si quantum dots
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Contributors:Heiko Groiss ( author ) / Lukas Spindlberger ( author ) / Peter Oberhumer ( author ) / Friedrich Schäffler ( author ) / Thomas Fromherz ( author ) / Martyna Grydlik ( author ) / Moritz Brehm ( author )
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Published in:Semiconductor Science and Technology ; 32, 2 ; 02LT01
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Publisher:
- New search for: Institute of Physics
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Publication date:2017-02-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 32, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 02LT01
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Photoluminescence enhancement through vertical stacking of defect-engineered Ge on Si quantum dotsHeiko Groiss / Lukas Spindlberger / Peter Oberhumer / Friedrich Schäffler / Thomas Fromherz / Martyna Grydlik / Moritz Brehm et al. | 2017
- 023001
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A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communicationsSujan Rajbhandari / Jonathan J D McKendry / Johannes Herrnsdorf / Hyunchae Chun / Grahame Faulkner / Harald Haas / Ian M Watson / Dominic O’Brien / Martin D Dawson et al. | 2017
- 023002
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Physics and performance of nanoscale semiconductor devices at cryogenic temperaturesF Balestra / G Ghibaudo et al. | 2017
- 024001
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Imaging electron motion in grapheneSagar Bhandari / Robert M Westervelt et al. | 2017
- 024002
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Fabrication and characterization of nanometer-sized gaps in suspended few-layer graphene devicesS Lumetti / L Martini / A Candini et al. | 2017
- 025001
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Enhanced performance of a GaN piezoelectric nanogenerator with an embedded nanoporous layer via the suppressed carrier screening effectJin-Ho Kang / Dae Kyung Jeong / Jun-Seok Ha / June Key Lee / Sang-Wan Ryu et al. | 2017
- 025002
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Structural and optical properties of tin (II) sulfide thin films deposited using organophosphorus precursor (Ph3PS)Kawther Assili / Khaled Alouani / Xavier Vilanova et al. | 2017
- 025003
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Molecular epitaxy of pseudomorphic Ge1−ySny (y = 0.06–0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4P M Wallace / C L Senaratne / Chi Xu / P E Sims / J Kouvetakis / J Menéndez et al. | 2017
- 025004
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High-performance sidewall damascened tri-gate poly-si TFTs with the strain proximity free technique and stress memorization techniqueDong-Ru Hsieh / Po-Yi Kuo / Jer-Yi Lin / Yi-Hsuan Chen / Tien-Shun Chang / Tien-Sheng Chao et al. | 2017
- 025005
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Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high efficiency n-type c-Si solar cellsHuong Thi Thanh Nguyen / Nagarajan Balaji / Cheolmin Park / Nguyen Minh Triet / Anh Huy Tuan Le / Seunghwan Lee / Minhan Jeon / Donhyun Oh / Vinh Ai Dao / Junsin Yi et al. | 2017
- 025006
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New insight on the interaction of self-activated and Mn-related emission centers in ZnSYu Yu Bacherikov / I Vorona / A Zhuk / A V Gilchuk / N Korsunska / I Markevich et al. | 2017
- 025007
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Uniform dehydrogenation of amorphous silicon thin films using a wide thermal annealing systemYong Chan Jung / Sejong Seong / Taehoon Lee / Jinho Ahn / Tae Hyun Kim / Won-Jae Yeo / In-Sung Park et al. | 2017
- 025008
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Impact of thermal crosstalk between emitters on power roll-over in nitride-based blue-violet laser barsP Śpiewak / M Wasiak / M Kuc / Sz Stańczyk / P Perlin / W Nakwaski / R P Sarzała et al. | 2017
- 025009
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Fabrication of resistive switching memory based on solution processed PMMA-HfOx blended thin filmsJae-Won Lee / Won-Ju Cho et al. | 2017
- 025010
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Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor depositionDavid A Browne / Micha N Fireman / Baishakhi Mazumder / Leah Y Kuritzky / Yuh-Renn Wu / James S Speck et al. | 2017
- 025011
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Au/n-InP Schottky diodes using an Al2O3 interfacial layer grown by atomic layer depositionHogyoung Kim / Min Soo Kim / Seung Yu Yoon / Byung Joon Choi et al. | 2017
- 025012
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Influence of defects and indium distribution on emission properties of thick In-rich InGaN layers grown by the DERI techniqueDarius Dobrovolskas / Jūras Mickevičius / Saulius Nargelas / Augustas Vaitkevičius / Yasushi Nanishi / Tsutomu Araki / Gintautas Tamulaitis et al. | 2017
- 025013
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Large area growth of monolayer MoS2 film on quartz and its use as a saturable absorber in laser mode-lockingWei-fang Zhao / Hua Yu / Meng-zhou Liao / Ling Zhang / Shu-zhen Zou / Hai-juan Yu / Chao-jian He / Jing-yuan Zhang / Guang-yu Zhang / Xue-chun Lin et al. | 2017
- 025014
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A theoretical study of the optical Stark effect in InGaAs/InAlAs quantum dotsDinh Nhu Thao / Le Thi Ngoc Bao / Duong Dinh Phuoc / Nguyen Hong Quang et al. | 2017
- 025015
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Laser diode structures with a saturable absorber for high-energy picosecond optical pulse generation by combined gain-and Q-switchingB S Ryvkin / E A Avrutin / J E K Kostamovaara / J T Kostamovaara et al. | 2017
- 025016
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(In,Ga,Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral rangeN N Ledentsov / V A Shchukin / Yu M Shernyakov / M M Kulagina / A S Payusov / N Yu Gordeev / M V Maximov / N A Cherkashin et al. | 2017
- 025017
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Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistorsM Florovič / R Stoklas / J Kováč / P Kordoš et al. | 2017
- 025018
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Carrier statistics in graphene at high electric fieldD K Ferry et al. | 2017