Effect of noise components on L-shaped and T-shaped heterojunction tunnel field effect transistors (English)
- New search for: Chander, Sweta
- New search for: Sinha, Sanjeet Kumar
- Further information on Sinha, Sanjeet Kumar:
- https://orcid.org/0000-0002-7581-4645
- New search for: Chaudhary, Rekha
- New search for: Goswami, Rupam
- Further information on Goswami, Rupam:
- https://orcid.org/0000-0001-8491-2282
- New search for: Chander, Sweta
- New search for: Sinha, Sanjeet Kumar
- Further information on Sinha, Sanjeet Kumar:
- https://orcid.org/0000-0002-7581-4645
- New search for: Chaudhary, Rekha
- New search for: Goswami, Rupam
- Further information on Goswami, Rupam:
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In:
Semiconductor Science and Technology
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37
, 7
;
2022
- Article (Journal) / Electronic Resource
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Title:Effect of noise components on L-shaped and T-shaped heterojunction tunnel field effect transistors
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Contributors:Chander, Sweta ( author ) / Sinha, Sanjeet Kumar ( author ) / Chaudhary, Rekha ( author ) / Goswami, Rupam ( author )
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Published in:
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Publisher:
- New search for: IOP Publishing
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Publication date:2022-07-01
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Size:11 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 37, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Improvement of thermal resistance in InGaAs/GaAs/AlGaAs microdisk lasers bonded onto siliconZubov, F I / Moiseev, E I / Nadtochiy, A M / Fominykh, N A / Ivanov, K A / Makhov, I S / Dragunova, A S / Maximov, M V / Vorobyev, A A / Mozharov, A M et al. | 2022
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Exploring the exemplary structural, electronic, optical, and elastic nature of inorganic ternary cubic XBaF3 (X = Al and Tl) employing the accurate TB-mBJ approachHusain, Mudasser / Rahman, Nasir / Khan, Rajwali / Sohail, Mohammad / Khan, Abid Ali / Elansary, Hosam O / El-Abedin, Tarek K Zin / Mahmoud, Eman A / Abdelmohsen, Shaimaa A M / Khan, Aurangzeb et al. | 2022
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The influence of lightly doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMTLiu, Kai / Wang, Runhao / Wang, Chong / Zheng, Xuefeng / Ma, Xiaohua / Bai, Junchun / Cheng, Bin / Liu, Ruiyu / Li, Ang / Zhao, Yaopeng et al. | 2022
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Differential spin Hall MRAM based low power logic circuits and multipliersNehra, Vikas / Prajapati, Sanjay / Kumar, T Nandha / Kaushik, Brajesh Kumar et al. | 2022
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Improvements of electrical and thermal characteristics for AlGaN/GaN HEMT grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrateHieu, Le Trung / Chiang, Chung-Han / Anandan, Deepak / Dee, Chang-Fu / Hamzah, Azrul Azlan / Lee, Ching-Ting / Lin, Chung-Hsiung / Chang, Edward Yi et al. | 2022
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Towards high performance near infrared sensitive multilayer organic phototransistors: effects of the acceptor and its positionTang, Chenyu / Lu, Chengyu / Dai, Qingyong / Zhang, Ningbo / Sun, Lei / Xu, Sunan / Peng, Yingquan / Lv, Wenli et al. | 2022
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A novel 3.3 kV 4H-SiC trench PiN with enhanced conductance modulation effectZhang, Yourun / Ou, Yanggang / Luo, Jiamin / Wang, Shuai / Zhang, Bo / Niu, Yingxi et al. | 2022
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A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the sameNoshin, Maliha / Soman, Rohith / Xu, Xiaoqing / Chowdhury, Srabanti et al. | 2022
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A SiC sidewall enhanced trench JBS diode with improved forward performanceKong, Moufu / Chen, Zongqi / Gao, Jiacheng / Duan, Yuanmiao / Hu, Zewei / Yi, Bo / Yang, Hongqiang et al. | 2022
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Chemical imaging of oxide confinement layers in GaAs/AlxGa1−xAs VCSELsMokhtari, Merwan / Pagnod-Rossiaux, Philippe / Levallois, Christophe / Pofelski, Alexandre / Laruelle, François / Botton, Gianluigi A / Landesman, Jean-Pierre et al. | 2022
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Performance and analysis of an ultraviolet C-band light emitting diode with an emission wavelength of 268 nmZhang, Jianping / Zhou, Ling / Gao, Ying / Lunev, Alexander / Zhang, Bin / Götz, Werner et al. | 2022
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Analog synaptic devices applied to spiking neural networks for reinforcement learning applicationsKim, Jangsaeng / Lee, Soochang / Kim, Chul-Heung / Park, Byung-Gook / Lee, Jong-Ho et al. | 2022
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Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layersRouth, E L / Abdelhamid, M / Colter, P C / Bonner, A J / El-Masry, N A / Bedair, S M et al. | 2022
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A comparative analysis and an optimized structure of vertical GaN floating gate trench MOSFET for high-frequency FOMJaiswal, Nilesh Kumar / Ramakrishnan, V N et al. | 2022
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Monte Carlo simulations of spin transport in nanoscale In0.7Ga0.3As transistors: temperature and size effectsThorpe, B / Schirmer, S / Kalna, K et al. | 2022
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Effect of noise components on L-shaped and T-shaped heterojunction tunnel field effect transistorsChander, Sweta / Sinha, Sanjeet Kumar / Chaudhary, Rekha / Goswami, Rupam et al. | 2022
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Threshold-voltage bias-instability in SiC MOSFETs: effects of stress temperature and level on oxide charge buildup and recoveryGhosh, Amartya K / Hao, Jifa / Cook, Michael / Suliman, Samia A / Wang, Xinyu / Awadelkarim, Osama O et al. | 2022
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Defect engineering using microwave processing in SiC and GaAsOlikh, Oleg / Lytvyn, Petro et al. | 2022
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Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facetsCuesta, Sergi / Denaix, Lou / Castioni, Florian / Dang, Le Si / Monroy, Eva et al. | 2022