Current conduction in bound-to-miniband transition III-V multiquantum well/superlattice infrared photodetectors (English)
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In:
Semiconductor Science and Technology
;
8
, 1S
;
S406-S411
;
1993
- Article (Journal) / Electronic Resource
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Title:Current conduction in bound-to-miniband transition III-V multiquantum well/superlattice infrared photodetectors
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Contributors:
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Published in:Semiconductor Science and Technology ; 8, 1S ; S406-S411
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Publication date:1993-01-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 8, Issue 1S
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- S1
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Prospects for the future of narrow bandgap materialsT C McGill / D A Collins et al. | 1993
- S6
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Properties of Sn/Ge superlatticesG Abstreiter / J Olajos / R Schorer / P Vogl / W Wegscheider et al. | 1993
- S9
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Structural studies of natural superlattices in group III-V alloy epitaxial layersA G Norman / T -Y Seong / I T Ferguson / G R Booker / B A Joyce et al. | 1993
- S16
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High-magnetic-field studies of HgSe(Fe)M von Ortenberg et al. | 1993
- S22
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The band structure of mixed-crystal Hg1-xFexSeC Skierbiszewski / Z Wilamowski / J Kossut et al. | 1993
- S26
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Longitudinal relaxation time due to RKKY coupling in mixed-valence HgFeSeZ Wilamowski / W Jantsch / G Hendorfer et al. | 1993
- S30
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Hybridization-mediated spin-dependent p-d interaction in semimagnetic semiconductors: experimental proofW Szuszkiewicz / C Julien / M Balkanski / B Witkowska et al. | 1993
- S33
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Iron doping: a tool to improve the electrical properties of Hg1-xZnxSeW Dobrowolski / E Grodzicka / J Kossut / B Witkowska et al. | 1993
- S37
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High-temperature magnetic freezing in (Cs1-xMnx)3As2E Lahderanta / R Laiho / A V Lashkul / A Makinen / V S Zakhvalinski et al. | 1993
- S40
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Why various types of donor can either enhance or reduce electron mobility in narrow-gap semiconductorsC Skierbiszewski / Z Wilamowski / T Suski / J Kossut / B Witkowska et al. | 1993
- S44
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Anisotropy of the magnetic interactions in HgFeSeZ Wilamowski / H Przybylinska / W Joss / M Guillot et al. | 1993
- S48
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Novel magnetotransport and magneto-optical processes in semimetallic HgTe-CdTe superlatticesC A Hoffman / J R Meyer / F J Bartoli et al. | 1993
- S58
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Pressure dependence of infrared photoluminescence spectra from HgTe/CdTe superlatticesH M Cheong / J H Burnett / W Paul / P M Young / Y Lansari / J F Schetzina et al. | 1993
- S62
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Infrared photoluminescence on molecular beam epitaxially grown Hg1-xCdxTe layersM M Kraus / C R Becker / S Scholl / Y S Wu / S Yuan / G Landwehr et al. | 1993
- S66
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Observation of magnetophonon resonance oscillations in open-gap Hg1-x-yCdxMnyTe grown by LPEK Takita / S Kuroda / Hyuk-Jin Kwon et al. | 1993
- S71
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Electrical properties of the anodic oxide-HgZnTe interfaceI Esquivias / J Baars / D Brink / D Eger et al. | 1993
- S75
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Fourier transform photoluminescence excitation spectroscopy of medium-bandgap Hg1-xCdxTe and InSbF Fuchs / K Kheng / K Schwarz / P Koidl et al. | 1993
- S81
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Transient and steady-state lifetime measurements on epitaxially grown CdxHg1-xTeS Barton / P Capper / A McAllister / C L Jones / N Metcalfe et al. | 1993
- S86
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The study of far-infrared phonon spectra on Hg1-xCdxTeJ H Chu / S C Shen et al. | 1993
- S90
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Adaptation of deep level transient spectroscopy for narrow bandgap semiconductor materialsS J Zachman / E Finkman / G Bahir et al. | 1993
- S95
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Precision of the Hall quantization in a naturally occurring two-dimensional system-HgCdMnTe bicrystalsG Grabecki / A Wittlin / T Dietl / P A A Teunissen / S A J Wiegers / J A A J Perenboom et al. | 1993
- S99
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The optical absorption coefficient of HgTe-CdTe superlattices-theory and experimentE Bangert / P Boege / V Latussek / G Landwehr et al. | 1993
- S102
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Electronic band structure of far-infrared Ga1-xInxSb/InAs superlatticesR H Miles / J N Schulman / D H Chow / T C McGill et al. | 1993
- S106
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The effect of interface bond type on the structural and optical properties of GaSb/InAs superlatticesJ R Waterman / B V Shanabrook / R J Wagner / M J Yang / J L Davis / J P Omaggio et al. | 1993
- S112
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Magneto-optic and magnetotransport study of InAs/Ga1-xInxSb superlatticesJ P Omaggio / R J Wagner / J R Meyer / C A Hoffman / M J Yang / D H Chow / R H Miles et al. | 1993
- S117
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Investigation of Sb/GaSb multilayer structures for potential application as an indirect narrow-bandgap materialT D Golding / J A Dura / H Wang / J T Zborowski / A Vigliante / H C Chen / J H Miller Jr / J R Meyer et al. | 1993
- S121
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Optical analysis of InAs heterostructures grown by migration-enhanced epitaxyM Inoue / M Yano / H Furuse / N Nasu / Y Iwai et al. | 1993
- S125
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Field-effect controlled resonant interband tunnelling in electron surface layers on InAs and In0.53Ga0.47AsB Foste / U Kunze / G Zwinge / A Schlachetzki et al. | 1993
- S129
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Far-infrared spectroscopy in strained AlSb/InAs/AlSb quantum wellsM J Yang / P J Lin-Chung / R J Wagner / J R Waterman / W J Moore / B V Shanabrook et al. | 1993
- S133
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The effect of Landau quantization on cyclotron resonance in a non-parabolic quantum wellsJ Scriba / A Wixforth / J P Kotthaus / C R Bolognesi / C Nguyen / G Tuttle / J H English / H Kroemer et al. | 1993
- S137
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Photoconductivity in AlSb/InAs quantum wellsCh Gauer / J Scriba / A Wixforth / J P Kotthaus / C Nguyen / G Tuttle / J H English / H Kroemer et al. | 1993
- S141
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Mesoscopic phenomena in diluted magnetic semiconductorsT Dietl / G Grabecki / J Jaroszynski et al. | 1993
- S147
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Exchange interaction in semimagnetic IV-VI multi-quantum-well structuresF Geist / H Pascher / N Frank / G Bauer / M Kriechbaum et al. | 1993
- S152
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Carrier-induced magnetic properties in small-gal semiconductorsP J T Eggenkamp / T Story / H J M Swagten / C W H M Vennix / C H W Swuste / W J M de Jonge et al. | 1993
- S156
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Free-carrier magneto-absorption in HgZnTe-CdTe and HgTe-CdTe superlatticesJ Manasses / Y Guldner / J P Vieren / J P Faurie et al. | 1993
- S161
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Insulator-metal transition in HgTe in crossed magnetic and electric fieldsP Pfeffer / W Zawadzki et al. | 1993
- S165
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Influence of heavy-hole scattering on the magnetotransport behaviour of p-type zero-gap Hg1-xMnxTeGuozhen Zheng / Jinxi Shen / Shaoling Guo / Dingyuan Tang et al. | 1993
- S168
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Magnetotransport investigations at InSb and Hg1-xCdxTe bicrystals in tilted magnetic fieldsG Nachtwei / N J Bassom / W Kraak / R J Nicholas / M Watts et al. | 1993
- S172
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Phonon-assisted interband magneto-optical transitions in HgCdMnTeW Zawadzki / E Dudziak / L Z Jedral / E Placzek-Popko / J Bozym et al. | 1993
- S176
-
Band offsets in Eu-containing lead chalcogenides and lead chalcogenide superlattices from spectroscopic dataK H Herrman / J Auth / K -P Mollmann / J W Tomm / H Bottner / A Lambrecht / M Tacke / I V Kolesnikov / A E Yunovich / A I Fedorenko et al. | 1993
- S180
-
Shubnikov-de Haas oscillations in Cd3(AsxP1-x)2A N Nateprov / I Laue / M von Ortenberg / E K Arushanov et al. | 1993
- S183
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Doping studies in MOVPE-grown CdxHg1-xTeC D Maxey / I G Gale / J B Clegg / P A C Whiffin et al. | 1993
- S197
-
Narrow CdTe/CdHgTe interdiffused structuresA Lusson / R Druilhe / Y Marfaing / E Rzepka et al. | 1993
- S200
-
The MOVPE growth and characterization of Hg1-xMnxTeM Funaki / J E Lewis / T D Hallam / Chaorong Li / S K Halder / A W Brinkman / B K Tanner et al. | 1993
- S205
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Properties of HgCdTe layers grown by isothermal vapour phase epitaxy at high pressureP Mitra / T R Schimert / F C Case / S L Barnes / L T Claiborne / H L Wilson et al. | 1993
- S211
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Techniques for improving the control of properties of liquid phase epitaxial (CdHg)TeM G Astles / N Shaw / G Blackmore et al. | 1993
- S216
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Molecular beam epitaxial growth of (100) Hg0.8Cd0.2Te on Cd0.96Zn0.04TeL He / C R Becker / R N Bicknell-Tassius / S Scholl / G Landwehr et al. | 1993
- S221
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Electron mobility in p-type epitaxially grown Hg1-xCdxTeN T Gordon / S Barton / P Capper / C L Jones / N Metcalfe et al. | 1993
- S225
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Study of extended defects in low n-type HgCdTe using Hall measurementsN N Berchenko / J S Budzhak / K R Kurbanov / G Sasvari et al. | 1993
- S229
-
InAs monolayers and quantum dots in a crystalline GaAs matrixK H Ploog / O Brandt et al. | 1993
- S236
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Optical properties of InAs quantum wells emitting between 0.9 mu m and 2.5 mu mE Tournie / O Brandt / K H Ploog et al. | 1993
- S240
-
Magneto-optical properties of quantum dots in InSbW Zawadzki / M Kubisa et al. | 1993
- S243
-
Subbands in inversion layers on NGS for Egap to 0B Freytag / U Rossler / O Pankratov et al. | 1993
- S246
-
Kinetic confinement of charge carriers in heterostructures and accumulation layersM Kubisa / W Zawadzki et al. | 1993
- S252
-
Energy spectrum in quantum dots of IV-VI narrow-gap semiconductorsV K Dugaev / V I Litvinov / P P Petrov / O A Mironov / M Oszwaldowski et al. | 1993
- S255
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HgCdTe infrared diode lasers grown by MBEJ M Arias / M Zandian / R Zucca / J Singh et al. | 1993
- S261
-
Optical spectroscopy of CdHgTe/CdTe quantum wells and superlatticesE Monterrat / L Ulmer / N Magnea / H Mariette / J L Pautrat / K Kheng / F Fuchs et al. | 1993
- S266
-
Type conversion of CdxHg1-xTe grown by liquid phase epitaxyD T Dutton / E O'Keefe / P Capper / C L Jones / S Mugford / C Ard et al. | 1993
- S270
-
As diffusion in Hg1-xCdxTe for junction formationL O Bubulac / S J C Irvine / E R Gertner / J Bajaj / W P Lin / R Zucca et al. | 1993
- S276
-
Interdiffusion studies in CdTe/HgTe superlatticesA Tardot / A Hamoudi / N Magnea / P Gentile / J L Pautrat et al. | 1993
- S281
-
Assessment of doped CdxHg1-xTe structures using bevelled sectionsI G Gale / J B Clegg / S Mugford / C D Maxey / S Barton / P Capper / M Hastings / C L Jones et al. | 1993
- S286
-
Cavity structure effects on CdHgTe photopumped heterostructure lasersJ Bleuse / N Magnea / J -L Pautrat / H Mariette et al. | 1993
- S289
-
Performance of p+-n HgCdTe photodiodesA Rogalski / A Jozwikowska / K Jozwikowski / J Rutkowski et al. | 1993
- S293
-
Removal of oxygen and reduction of carbon contamination on (100) Cd0.96Zn0.04Te substratesY S Wu / C R Becker / A Waag / R N Bicknell-Tassius / G Landwehr et al. | 1993
- S296
-
Infrared absorption in HgCdTe/CdTe single quantum well structuresR Sizmann / P Helgesen / H Steen / T Skauli / T Colin / K Gjonnes / S Lovold et al. | 1993
- S300
-
Mid-infrared picosecond spectroscopy of MBE indium arsenide epilayers at 300 KK L Vodopyanov / H Graener / C C Phillips et al. | 1993
- S305
-
Ultrafast recombination processes in lead chalcogenide semiconductors studied via picosecond optical nonlinearitiesR Klann / T Hofer / R Buhleier / T Elsaesser / A Lambrecht et al. | 1993
- S309
-
Nuclear spin polarization in InSb detected by spin-flip Raman gain spectroscopyW Hofmann / H Pascher / G Denninger et al. | 1993
- S313
-
Crossed-field hot-hole cyclotron resonance in p-Ge: nonparabolic and quantum effectsC Kremser / K Unterrainer / E Gornik / P Pfeffer / W Zawadzki / B Murdin / C R Pidgeon et al. | 1993
- S317
-
RII spectroscopy of trap levels in bulk and LPE Hg1-xCdxTeC L Littler / X N Song / Z Yu / J L Elkind / J R Lowney et al. | 1993
- S322
-
Characterization of free carriers in IV-VI laser materials from infrared reflectivityD B Kushev / N N Zheleva et al. | 1993
- S326
-
Photo-hall measurements in inhomogeneous samples of arbitrary shapeJ I L Hughes / H A MacKenzie et al. | 1993
- S330
-
Interband and intraband contributions to refractive index in the new PbSe-based narrow-gap semiconductorsK H Herrmann / U Muller / V Melzer et al. | 1993
- S334
-
Molecular beam epitaxy of laterally structured lead chalcogenides for the fabrication of buried heterostructure lasersA Lambrecht / H Bottner / M Agne / R Kurbel / A Fach / B Halford / U Schiessl / M Tacke et al. | 1993
- S337
-
Thermal-mismatch strain relaxation mechanisms in heteroepitaxial lead chalcogenide layers on Si substratesH Zogg / C Maissen / S Blunier / S Teodoropol / R M Overney / T Richmond / J W Tomm et al. | 1993
- S342
-
Imaging ion-bombarded III-V semiconductor surfaces: a scanning tunnelling microscopy study of InSb(100)M O Schweitzer / F M Leibsle / T S Jones / C F McConville / N V Richardson et al. | 1993
- S345
-
Photoconductivity spectrum and kinetics of Pb1-xSnxTe/PbTe/BaF2 multiquantum well structuresI I Zasavitsky / B N Matsonashvili / V T Trofimov et al. | 1993
- S349
-
Lead telluride-based photodetectors: a new approachB A Akimov / D R Khokhlov et al. | 1993
- S352
-
Magnetic-field-induced localization in Pb1-xSnxTe(In)D B Khokhlov / I I Ivanchik / A de Visser / A V Nikorich et al. | 1993
- S356
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Structural dependence of the optical absorption in TlBiSe2 thin films near the fundamental absorption edgeC L Mitsas / E K Polychroniadis / D I Siapkas et al. | 1993
- S360
-
The electrical characteristics of Pb1-xEuxSe homojunctionsJ Xu / B Halford / M Tacke et al. | 1993
- S364
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Interface energy spectrum of real PbTe/SnTe heterojunctionsV I Litvinov et al. | 1993
- S367
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Piezoelectric effects in superlatticesM Lakrimi / R W Martin / C Lopez / D M Symons / E T R Chidley / R J Nicholas / N J Mason / P J Walker et al. | 1993
- S373
-
Interband and intersubband transitions in indium arsenide doping superlattices studied by absorption, nonlinear absorption and photoconductivity spectroscopiesC C Phillips / E A Johnson / R H Thomas / H L Vaghjiani / I T Ferguson / A G Norman et al. | 1993
- S380
-
Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPEA Aardvark / G G Allogho / G Bougnot / J P R David / A Giani / S K Haywood / G Hill / P C Klipstein / F Mansoor / N J Mason et al. | 1993
- S386
-
A heterojunction minority carrier barrier for InSb devicesT Ashley / A B Dean / C T Elliott / A D Johnson / G J Pryce / A M White / C R Whitehouse et al. | 1993
- S390
-
Exclusion effects revisited: nontraditional use of narrow-gap semiconductorsV K Malyutenko et al. | 1993
- S396
-
Damage-induced changes in the electronic properties of InSb(100): implications for surface preparationW T Yuen / M O Schweitzer / T S Jones / C F McConville / E A Johnson / A Mackinnon / N V Richardson / R A Stradling et al. | 1993
- S400
-
Device physics of quantum well infrared photodetectorsB F Levine et al. | 1993
- S406
-
Current conduction in bound-to-miniband transition III-V multiquantum well/superlattice infrared photodetectorsS S Li / M Y Chuang / L S Yu et al. | 1993
- S412
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Responsivity and thermionic current in asymmetric quantum well infrared detectorsA Brandel / A Fraenkel / E Finkman / G Bahir / G Livescu / M T Asom et al. | 1993
- S417
-
Stimulated emission due to the magnetoelectric photoeffect in narrow-gap semiconductors at the quantum limitT Morimoto / M Chiba / G Kido / A Tanaka et al. | 1993
- S424
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Narrow-gap semiconductor magnetic-field sensors and applicationsJ Heremans / D L Partin / C M Thrush / L Green et al. | 1993
- S431
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Superconducting structures on narrow-gap semiconductorsH Takayanagi / T Akazaki / J Nitta et al. | 1993
- S435
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Review of nipi structures of photon detectionJ Oswald / M Pippan et al. | 1993
- S443
-
MCT versus quantum well structures for IR detectorsS C Shen et al. | 1993
- S447
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Low-temperature switching in PbTe(Ga) at high electric fieldsB A Akimov / A V Albul / E V Bogdanov et al. | 1993