Flexible diodes for radio frequency (RF) electronics: a materials perspective (English)
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Topical Review
- New search for: James Semple
- New search for: Dimitra G Georgiadou
- New search for: Gwenhivir Wyatt-Moon
- New search for: Gerwin Gelinck
- New search for: Thomas D Anthopoulos
- New search for: James Semple
- New search for: Dimitra G Georgiadou
- New search for: Gwenhivir Wyatt-Moon
- New search for: Gerwin Gelinck
- New search for: Thomas D Anthopoulos
In:
Semiconductor Science and Technology
;
32
, 12
;
123002
;
2017
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Flexible diodes for radio frequency (RF) electronics: a materials perspective
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Subtitle:Topical Review
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Additional title:Flexible diodes for radio frequency (RF) electronics: a materials perspective
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Contributors:James Semple ( author ) / Dimitra G Georgiadou ( author ) / Gwenhivir Wyatt-Moon ( author ) / Gerwin Gelinck ( author ) / Thomas D Anthopoulos ( author )
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Published in:Semiconductor Science and Technology ; 32, 12 ; 123002
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Publisher:
- New search for: Institute of Physics
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Publication date:2017-12-01
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Size:1 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 32, Issue 12
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 12LT01
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Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrateH K Cho / O Krüger / A Külberg / J Rass / U Zeimer / T Kolbe / A Knauer / S Einfeldt / M Weyers / M Kneissl et al. | 2017
- 12LT02
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The effects of localized tail states on charge transport mechanisms in amorphous zinc tin oxide Schottky diodesYoungbae Son / Rebecca L Peterson et al. | 2017
- 123001
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Recent trends in hardware security exploiting hybrid CMOS-resistive memory circuitsShubham Sahay / Manan Suri et al. | 2017
- 123002
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Flexible diodes for radio frequency (RF) electronics: a materials perspectiveJames Semple / Dimitra G Georgiadou / Gwenhivir Wyatt-Moon / Gerwin Gelinck / Thomas D Anthopoulos et al. | 2017
- 123003
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Insights into the physics and chemistry of chalcogenides obtained from x-ray absorption spectroscopyAlexander V Kolobov / Paul Fons et al. | 2017
- 123004
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Review on analog/radio frequency performance of advanced silicon MOSFETsVikram Passi / Jean-Pierre Raskin et al. | 2017
- 124001
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In situ phosphorus-doped Ge1−xSnx layers grown using low-temperature metal-organic chemical vapor depositionShinichi Ike / Wakana Takeuchi / Osamu Nakatsuka / Shigeaki Zaima et al. | 2017
- 124002
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Doping of two-dimensional MoS2 by high energy ion implantationKang Xu / Yuda Zhao / Ziyuan Lin / Yan Long / Yi Wang / Mansun Chan / Yang Chai et al. | 2017
- 124003
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Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cellFirman Mangasa Simanjuntak / Pragya Singh / Sridhar Chandrasekaran / Franky Juanda Lumbantoruan / Chih-Chieh Yang / Chu-Jie Huang / Chun-Chieh Lin / Tseung-Yuen Tseng et al. | 2017
- 124004
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Optical critical points of SixGe1−x−ySny alloys with high Si contentInga A Fischer / Audrey Berrier / Florian Hornung / Michael Oehme / Peter Zaumseil / Giovanni Capellini / Nils von den Driesch / Dan Buca / Jörg Schulze et al. | 2017
- 124005
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MBE grown germanium tunnel-junctions—burstein-moss effect and band-edge luminescence in the Ge Zener-EmitterR Koerner / I A Fischer / D Schwarz / C Clausen / M Oehme / J Schulze et al. | 2017
- 124006
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Strain engineering in epitaxial Ge1− xSnx: a path towards low-defect and high Sn-content layersJoe Margetis / Shui-Qing Yu / Nupur Bhargava / Baohua Li / Wei Du / John Tolle et al. | 2017
- 125001
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Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layersS Golovynskyi / O Datsenko / L Seravalli / O Kozak / G Trevisi / P Frigeri / I S Babichuk / I Golovynska / Junle Qu et al. | 2017
- 125002
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Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructuresCaroline B Lim / Akhil Ajay / Jonas Lähnemann / Catherine Bougerol / Eva Monroy et al. | 2017
- 125003
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Growth of defect-free GaAsSbN axial nanowires via self-catalyzed molecular beam epitaxyManish Sharma / Prithviraj Deshmukh / Pavan Kasanaboina / C Lewis Reynolds Jr / Yang Liu / Shanthi Iyer et al. | 2017
- 125004
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Oxide-confined VCSELs fabricated with a simple self-aligned process flowL Marigo-Lombart / S Calvez / A Arnoult / H Thienpont / K Panajotov / G Almuneau et al. | 2017
- 125005
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Demonstration of magnetic-field-induced rectification using circular ballistic channels with a rough boundaryV Hortelano / H Weidlich / W T Masselink / G Mahler / Y Takagaki et al. | 2017
- 125006
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Monte Carlo study of electron relaxation in graphene with spin polarized, degenerate electron gas in presence of electron-electron scatteringPiotr Borowik / Jean-Luc Thobel / Leszek Adamowicz et al. | 2017
- 125007
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First-principles calculation of the structure and electronic properties of Fe-substituted Bi2Ti2O7Jin-Dou Huang / Zhenyi Zhang / Feng Lin / Bin Dong et al. | 2017
- 125008
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Strong doping of the n-optical confinement layer for increasing output power of high- power pulsed laser diodes in the eye safe wavelength rangeBoris S Ryvkin / Eugene A Avrutin / Juha T Kostamovaara et al. | 2017
- 125009
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Terahertz conductivity of the highly mismatched amorphous alloy, GaNBiC P Vaisakh / C T Foxon / S V Novikov / R N Kini et al. | 2017
- 125010
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Electrical properties of lightly Ga-doped ZnO nanowiresS Alagha / S Heedt / D Vakulov / F Mohammadbeigi / E Senthil Kumar / Th Schäpers / D Isheim / S P Watkins / K L Kavanagh et al. | 2017
- 125011
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Extraction of mobility and Degradation coefficients in double gate junctionless transistorsY V Bhuvaneshwari / Abhinav Kranti et al. | 2017
- 125012
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Analytical high frequency GaN HEMT model for noise simulationsWondwosen Eshetu Muhea / Fetene Mulugeta Yigletu / Antonio Lazaro / Benjamin Iñiguez et al. | 2017
- 125013
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Control wafer bow of InGaP on 200 mm Si by strain engineeringBing Wang / Shuyu Bao / Riko I Made / Kwang Hong Lee / Cong Wang / Kenneth Eng Kian Lee / Eugene A Fitzgerald / Jurgen Michel et al. | 2017
- 125014
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Study of recombination characteristics in MOCVD grown GaN epi-layers on SiE Gaubas / T Ceponis / D Dobrovolskas / T Malinauskas / D Meskauskaite / S Miasojedovas / J Mickevicius / J Pavlov / V Rumbauskas / E Simoen et al. | 2017
- 125015
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Geometrical effects in JTE rings termination for 4H-SiC medium-voltage devicesLei Yuan / Qingwen Song / Xiaoyan Tang / Yimeng Zhang / Lixin Guo / Yimen Zhang / Yuming Zhang et al. | 2017
- 125016
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Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealingToshiharu Kubo / Takashi Egawa et al. | 2017
- 125017
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A back side configured pointed dipole plasmonic optical antenna array enhanced quantum dot infrared photodetectorXuejun Lu / Neda Mojaverian / Lin Li / Guiru Gu / Yingjie Zhang / Thitikorn Kemsri et al. | 2017
- 125018
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Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory deviceLisha Zhu / Wei Hu / Chao Gao / Yongcai Guo et al. | 2017
- 125019
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DFT investigations on mechanical stability, electronic structure and magnetism in Co2TaZ (Z = Al, Ga, In) heusler alloysShakeel Ahmad Khandy / Dinesh C Gupta et al. | 2017