The structural and optical properties of Cu2O films electrodeposited on different substrates (English)
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In:
Semiconductor Science and Technology
;
20
, 1
;
44-49
;
2005
- Article (Journal) / Electronic Resource
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Title:The structural and optical properties of Cu2O films electrodeposited on different substrates
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Contributors:
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Published in:Semiconductor Science and Technology ; 20, 1 ; 44-49
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Publication date:2005-01-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 20, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Band gap shift, structural characterization and phase transformation of CdSe thin films from nanocrystalline cubic to nanorod hexagonal on air annealingKale, R B / Lokhande, C D et al. | 2005
- 10
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Quantum modelling of I–V characteristics for 4H–SiC Schottky barrier diodesBlasciuc-Dimitriu, C / Horsfall, A B / Wright, N G / Johnson, C M / Vassilevski, K V / O'Neill, A G et al. | 2005
- 10
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Quantum modelling of I#8211V characteristics for 4H#8211SiC Schottky barrier diodesBlasciuc-Dimitriu, C. et al. | 2005
- 16
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Simple analytical valence band structure including warping and non-parabolicity to investigate hole transport in Si and GeRodríguez-Bolívar, S / Gómez-Campos, F M / Carceller, J E et al. | 2005
- 23
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DC- and IF-noise performance optimization of GaAs Schottky diodes for THz applicationsCojocari, O / Biber, S / Mottet, B / Rodriguez-Girones, M / Hartnagel, H L / Schmidt, L-P et al. | 2005
- 33
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Ultrahigh gain and non-radiative recombination channels in 1.5 µm range metamorphic InAs–InGaAs quantum dot lasers on GaAs substratesNovikov, I I / Gordeev, N Yu / Maximov, M V / Shernyakov, Yu M / Zhukov, A E / Vasil'ev, A P / Semenova, E S / Ustinov, V M / Ledentsov, N N / Bimberg, D et al. | 2005
- 33
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Ultrahigh gain and non-radiative recombination channels in 1.5 micron range metamorphic InAs-InGaAs quantum dot lasers on GaAs substratesNovikov, I.I. / Gordeev, N.Y. / Maximov, M.V. / Shernyakov, Y.M. / Zhukov, A.E. / Vasilev, A.P. / Semenova, E.S. / Ustinov, V.M. / Ledentsov, N.N. / Bimberg, D. et al. | 2005
- 33
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Ultrahigh gain and non-radiative recombination channels in 1.5 mum range metamorphic InAs-InGaAs quantum dot lasers on GaAs substratesNovikov, I. I. / Gordeev, N. Y. / Maximov, M. V. / Shernyakov, Y. M. / Zhukov, A. E. / Vasil ev, A. P. / Semenova, E. S. / Ustinov, V. M. / Ledentsov, N. N. / Bimberg, D. et al. | 2005
- 38
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Optimized dual temperature pulsed laser deposition of TiO2 to realize MTOS (metal-TiO2–SiO2–Si) capacitors with ultrathin gate dielectricSingh, Ravneet / Paily, Roy / DasGupta, Amitava / DasGupta, Nandita / Misra, Pankaj / Kukreja, Lalit M et al. | 2005
- 44
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The structural and optical properties of Cu2O films electrodeposited on different substratesLiu, Y L / Liu, Y C / Mu, R / Yang, H / Shao, C L / Zhang, J Y / Lu, Y M / Shen, D Z / Fan, X W et al. | 2005
- 50
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Porous GaN/SiC templates for homoepitaxial growth: effect of the built-in stress on the formation of porous structuresMynbaeva, M G / Mynbaev, K D / Sarua, A / Kuball, M et al. | 2005
- 56
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Determination of defect level parameters in semi-insulating GaAs:Cr from transient photocurrent experimentBelgacem, H / Merazga, A / Longeaud, C et al. | 2005
- 62
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Analysis of the turn-on process in 6 kV 4H-SiC junction diodesMnatsakanov, T T / Levinshtein, M E / Ivanov, P A / Palmour, J W / Das, M / Agarwal, A K et al. | 2005
- 68
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Reliability of HfSiON gate dielectricsO'Connor, Robert / Hughes, Greg / Degraeve, Robin / Kaczer, Ben / Kauerauf, Thomas et al. | 2005
- 72
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Lamp design for fast cooling of rapid thermal processes with a two-zone lamp using a step cooling processHung, S Y / Chao, C K / Hsu, C K et al. | 2005
- 80
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Absorption and reflection analysis of transparent conductive Ga-doped ZnO filmsAghamalyan, N R / Kafadaryan, E A / Hovsepyan, R K / Petrosyan, S I et al. | 2005
- 86
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Correlation between the low-temperature PL spectra and Cd0.9Zn0.1Te qualityLi, Guoqiang / Zhang, Xiaolu / Jie, Wanqi et al. | 2005
- 90
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Charge carrier mobility in field effect transistors: analysis of capacitance–conductance measurementsKatz, O / Roichman, Y / Bahir, G / Tessler, N / Salzman, J et al. | 2005
- 95
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Electrical and materials characterization of GSMBE grown Si1−x−yGexCy layers for heterojunction bipolar transistor applicationsMitrovic, I Z / Buiu, O / Hall, S / Zhang, J / Wang, Y / Hemment, P L F / El Mubarek, H A W / Ashburn, P et al. | 2005
- 103
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Effect of In additive on the electrical properties of Se–Te alloySharma, Vineet / Thakur, Anup / Goyal, N / Saini, G S S / Tripathi, S K et al. | 2005
- R1
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Electron spin resonance and related phenomena of low-dimensional electronic systems in III–V compoundsMeisels, Ronald et al. | 2005