Antimony selenide thin-film solar cells (English)
Topical Review
- New search for: Kai Zeng
- New search for: Ding-Jiang Xue
- New search for: Jiang Tang
- New search for: Kai Zeng
- New search for: Ding-Jiang Xue
- New search for: Jiang Tang
In:
Semiconductor Science and Technology
;
31
, 6
;
063001
;
2016
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Antimony selenide thin-film solar cells
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Subtitle:Topical Review
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Additional title:Antimony selenide thin film solar cells
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Contributors:
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Published in:Semiconductor Science and Technology ; 31, 6 ; 063001
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Publisher:
- New search for: Institute of Physics
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Publication date:2016-06-01
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Size:13 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 31, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 06LT01
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Modelling of interband transitions in GaAs tunnel diodeK Louarn / C Fontaine / A Arnoult / F Olivié / G Lacoste / F Piquemal / A Bounouh / G Almuneau et al. | 2016
- 063001
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Antimony selenide thin-film solar cellsKai Zeng / Ding-Jiang Xue / Jiang Tang et al. | 2016
- 063002
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Resistive switching memories based on metal oxides: mechanisms, reliability and scalingDaniele Ielmini et al. | 2016
- 064001
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Assessing the thermoelectric properties of single InSb nanowires: the role of thermal contact resistanceS Yazji / M Y Swinkels / M De Luca / E A Hoffmann / D Ercolani / S Roddaro / G Abstreiter / L Sorba / E P A M Bakkers / I Zardo et al. | 2016
- 064002
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Composition measurement of epitaxial ScxGa1−xN filmsH C L Tsui / L E Goff / N P Barradas / E Alves / S Pereira / R G Palgrave / R J Davies / H E Beere / I Farrer / D A Ritchie et al. | 2016
- 065001
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Preparation of p-type Na-doped Cu2O by electrodeposition for a p-n homojunction thin film solar cellNezar G Elfadill / M R Hashim / Khaled M Chahrour / S A Mohammed et al. | 2016
- 065002
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Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistorsCh Zervos / A Adikimenakis / A Bairamis / A Kostopoulos / M Kayambaki / K Tsagaraki / G Konstantinidis / A Georgakilas et al. | 2016
- 065003
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Estimation of frequency conversion efficiency of THz devices using a ballistic electron wave swing circuit modelChristian Schildbach / Duu Sheng Ong / Hans Hartnagel / Lorenz-Peter Schmidt et al. | 2016
- 065004
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Investigation of the induced gate noise of nanoscale MOSFETs in the very high frequency regionJongwook Jeon / Yoon Kim / Myounggon Kang et al. | 2016
- 065005
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Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulationsS García / I Íñiguez-de-la-Torre / J Mateos / T González / S Pérez et al. | 2016
- 065006
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Chlorine-based dry etching of β-Ga2O3Jack E Hogan / Stephen W Kaun / Elaheh Ahmadi / Yuichi Oshima / James S Speck et al. | 2016
- 065007
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Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperaturesP M Mooney / M C Tarun / V Bahrami-Yekta / T Tiedje / R B Lewis / M Masnadi-Shirazi et al. | 2016
- 065008
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High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfacesSilvia H Chan / Stacia Keller / Maher Tahhan / Haoran Li / Brian Romanczyk / Steven P DenBaars / Umesh K Mishra et al. | 2016
- 065009
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Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl6SeI4 single crystalsS S Kostina / J A Peters / W Lin / P Chen / Z Liu / P L Wang / M G Kanatzidis / B W Wessels et al. | 2016
- 065010
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Growth and characterization of α-phase Ga2−xSnxO3 thin films for solar-blind ultraviolet applicationsXiaolong Zhao / Zhenping Wu / Daoyou Guo / Wei Cui / Peigang Li / Yuehua An / Linghong Li / Weihua Tang et al. | 2016
- 065011
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Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronicsM Blaho / D Gregušová / Š Haščík / A Seifertová / M Ťapajna / J Šoltýs / A Šatka / L Nagy / A Chvála / J Marek et al. | 2016
- 065012
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Analytical band Monte Carlo analysis of electron transport in siliceneK H Yeoh / D S Ong / C H Raymond Ooi / T K Yong / S K Lim et al. | 2016
- 065013
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N-type ohmic contacts to undoped GaAs/AlGaAs quantum wells using only front-sided processing: application to ambipolar FETsD Taneja / F Sfigakis / A F Croxall / K Das Gupta / V Narayan / J Waldie / I Farrer / D A Ritchie et al. | 2016
- 065014
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Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structureQilong Bao / Sen Huang / Xinhua Wang / Ke Wei / Yingkui Zheng / Yankui Li / Chengyue Yang / Haojie Jiang / Junfeng Li / Anqi Hu et al. | 2016
- 065015
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Design considerations of biaxially tensile-strained germanium-on-silicon lasersXiyue Li / Zhiqiang Li / Simon Li / Lukas Chrostowski / Guangrui (Maggie) Xia et al. | 2016
- 065016
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A theoretical study of charge-transport parameters for a hydrogen-bonded organic semiconductor: the indigo and s-indaceno [1,2-b:5,6-b′] dithiophene-4,9-dione derivativesHui-Ling Wei (魏慧玲) / Ya-Rui Shi (时雅瑞) / Yu-Fang Liu (刘玉芳) et al. | 2016
- 065017
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Sidewall spacer optimization for steep switching junctionless transistorsManish Gupta / Abhinav Kranti et al. | 2016
- 065018
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The hydride vapor phase epitaxy of GaN on silicon covered by nanostructuresU Jahn / M Musolino / J Lähnemann / P Dogan / S Fernández Garrido / J F Wang / K Xu / D Cai / L F Bian / X J Gong et al. | 2016
- 065019
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Coplanar metal–semiconductor–metal light-emitting devices with an n++ InGaN layer and their application to displayH Long / Y P Zeng / Y Mei / L Y Ying / B P Zhang et al. | 2016
- 065020
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Characterization of p-GaN1−xAsx/n-GaN PN junction diodesH Qian / K B Lee / S Hosseini Vajargah / S V Novikov / I Guiney / S Zhang / Z H Zaidi / S Jiang / D J Wallis / C T Foxon et al. | 2016
- 065021
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The contact and photoconductivity characteristics between Co doped amorphous carbon and GaAs: n-type low-resistivity and semi-insulated high-resistivity GaAsZhangyin Zhai / Hualing Yu / Fen Zuo / Chunlian Guo / Guibin Chen / Fengming Zhang / Xiaoshan Wu / Ju Gao et al. | 2016
- 065022
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Compact-device model development for the energy-delay analysis of magneto-electric magnetic tunnel junction structuresN Sharma / J P Bird / P A Dowben / A Marshall et al. | 2016
- 065023
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Anomalous capacitance in temperature and frequency characteristics of a TiW/p-InP Schottky barrier diodeQingsong Wang / Jun Chen / Hengjing Tang / Xue Li et al. | 2016
- 065024
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A new modeling and simulation method for important statistical performance prediction of single photon avalanche diode detectorsYue Xu / Ping Xiang / Xiaopeng Xie / Yang Huang et al. | 2016
- 065025
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Understanding the effects of TCO work function on the performance of organic solar cells by numerical simulationAqing Chen / Kaigui Zhu / Qingyi Shao / Zhenguo Ji et al. | 2016
- 069601
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Erratum: Electron channeling in TiO2 coated Cu layers (2016 Semiconductor Science and Technology 31 055005)Pengyuan Zheng / Tianji Zhou / Daniel Gall et al. | 2016