Reliability studies of AlGaN/GaN high electron mobility transistors (English)
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In:
Semiconductor Science and Technology
;
28
, 7
;
2013
- Article (Journal) / Electronic Resource
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Title:Reliability studies of AlGaN/GaN high electron mobility transistors
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Contributors:Cheney, D J ( author ) / Douglas, E A ( author ) / Liu, L ( author ) / Lo, C F ( author ) / Xi, Y Y ( author ) / Gila, B P ( author ) / Ren, F ( author ) / Horton, David ( author ) / Law, M E ( author ) / Smith, David J ( author )
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Published in:
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Publisher:
- New search for: IOP Publishing
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Publication date:2013-07-01
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Size:12 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 28, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 070301
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Gallium nitride electronics| 2013
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Molecular beam epitaxy for high-performance Ga-face GaN electron devicesKaun, Stephen W / Wong, Man Hoi / Mishra, Umesh K / Speck, James S et al. | 2013
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Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxyShahedipour-Sandvik, F / Leathersich, J / Tompkins, R P / Suvarna, P / Tungare, M / Walsh, T A / Kirchner, K W / Zhou, S / Jones, K A et al. | 2013
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Investigations of AlGaN/GaN HFETs utilizing post-metallization etching by nitric acid treatmentChou, Bo-Yi / Hsu, Wei-Chou / Lee, Ching-Sung / Liu, Han-Yin / Tsai, Chih-Ming / Ho, Chiu-Sheng et al. | 2013
- 074003
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Investigations of AlGaN/GaN HEFTs utilizing post-metallization etching by nitric acid treatmentChou, B.-Y. / Hsu, W.-C. / Lee, C.-S. / Liu, H.-Y. / Tsai, C.-M. / Ho, C.-S. et al. | 2013
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Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivationRamanan, Narayanan / Lee, Bongmook / Kirkpatrick, Casey / Suri, Rahul / Misra, Veena et al. | 2013
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Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth methodChou, Bo-Yi / Hsu, Wei-Chou / Lee, Ching-Sung / Liu, Han-Yin / Ho, Chiu-Sheng et al. | 2013
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High-performance N-polar GaN enhancement-mode device technologySingisetti, Uttam / Wong, Man Hoi / Mishra, Umesh K et al. | 2013
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Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistorsMatulionis, Arvydas et al. | 2013
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III-nitride microwave control devices and ICsSimin, G / Jahan, F / Yang, J / Gaevski, M / Hu, X / Deng, J / Gaska, R / Shur, M et al. | 2013
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N-polar GaN epitaxy and high electron mobility transistorsWong, Man Hoi / Keller, Stacia / Dasgupta, Nidhi, Sansaptak / Denninghoff, Daniel J / Kolluri, Seshadri / Brown, David F / Lu, Jing / Fichtenbaum, Nicholas A / Ahmadi, Elaheh / Singisetti, Uttam et al. | 2013
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GaN HEMTs and MMICs for space applicationsWaltereit, P / Bronner, W / Quay, R / Dammann, M / Cäsar, M / Müller, S / Reiner, R / Brückner, P / Kiefer, R / van Raay, F et al. | 2013
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Gallium nitride devices for power electronic applicationsBaliga, B Jayant et al. | 2013
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Prospects for the application of GaN power devices in hybrid electric vehicle drive systemsSu, Ming / Chen, Chingchi / Rajan, Siddharth et al. | 2013
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Merits of gallium nitride based power conversionScott, Mark J / Fu, Lixing / Zhang, Xuan / Li, Jinzhu / Yao, Chengcheng / Sievers, Markus / Wang, Jin et al. | 2013
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Current status and scope of gallium nitride-based vertical transistors for high-power electronics application*Chowdhury, Srabanti / Swenson, Brian L / Wong, Man Hoi / Mishra, Umesh K et al. | 2013
This work was done at Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA.
- 074014
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Current status and scope of gallium nitride-based vertical transistors for high-power electronics applicationChowdhury, S. / Swenson, B.L. / Wong, M.H. / Mishra, U.K. et al. | 2013
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AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiersChen, Kevin J / Huang, Sen et al. | 2013
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Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectricLee, B / Choi, Y H / Kirkpatrick, C / Huang, A Q / Misra, V et al. | 2013
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AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposalHahn, Herwig / Reuters, Ben / Kalisch, Holger / Vescan, Andrei et al. | 2013
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Contact engineering of GaN-on-silicon power devices for breakdown voltage enhancementLin, Yu-Syuan / Lian, Yi-Wei / Yang, Jui-Ming / Lu, Hou-Cheng / Huang, Yen-Chieh / Cheng, Chih-Hsuan / Hsu, Shawn S H et al. | 2013
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Reliability studies of AlGaN/GaN high electron mobility transistorsCheney, D J / Douglas, E A / Liu, L / Lo, C F / Xi, Y Y / Gila, B P / Ren, F / Horton, David / Law, M E / Smith, David J et al. | 2013
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Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistorsArmstrong, Andrew M / Allerman, Andrew A / Baca, Albert G / Sanchez, Carlos A et al. | 2013
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Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurementsMeneghesso, Gaudenzio / Meneghini, Matteo / Bisi, Davide / Rossetto, Isabella / Cester, Andrea / Mishra, Umesh K / Zanoni, Enrico et al. | 2013
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III-nitride semiconductors for intersubband optoelectronics: a reviewBeeler, M / Trichas, E / Monroy, E et al. | 2013
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III-nitrides for energy production: photovoltaic and thermoelectric applicationsLu, Na / Ferguson, Ian et al. | 2013
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Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structuresLi, D / Shao, J / Tang, L / Edmunds, C / Gardner, G / Manfra, M J / Malis, O et al. | 2013
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Working toward high-power GaN/InGaN heterojunction bipolar transistorsShen, Shyh-Chiang / Dupuis, Russell D / Lochner, Zachery / Lee, Yi-Che / Kao, Tsung-Ting / Zhang, Yun / Kim, Hee-Jin / Ryou, Jae-Hyun et al. | 2013
- 074026
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GaN-on-insulator technology for high-temperature electronics beyond 400^oCHerfurth, P. / Maier, D. / Men, Y. / Rosch, R. / Lugani, L. / Carlin, J.-F. / Grandjean, N. / Kohn, E. et al. | 2013
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GaN-on-insulator technology for high-temperature electronics beyond 400 °CHerfurth, Patrick / Maier, David / Men, Yakiv / Rösch, Rudolf / Lugani, Lorenzo / Carlin, Jean-Francois / Grandjean, Nicolas / Kohn, Erhard et al. | 2013