Dislocation filters in GaAs on Si (English)
Free access
Paper
- New search for: I George
- New search for: F Becagli
- New search for: H Y Liu
- New search for: J Wu
- New search for: M Tang
- New search for: R Beanland
- New search for: I George
- New search for: F Becagli
- New search for: H Y Liu
- New search for: J Wu
- New search for: M Tang
- New search for: R Beanland
In:
Semiconductor Science and Technology
;
30
, 11
;
114004
;
2015
-
ISSN:
- Article (Journal) / Electronic Resource
-
Title:Dislocation filters in GaAs on Si
-
Subtitle:Paper
-
Additional title:Dislocation filters in GaAs on Si
-
Contributors:
-
Published in:Semiconductor Science and Technology ; 30, 11 ; 114004
-
Publisher:
- New search for: Institute of Physics
-
Publication date:2015-11-01
-
Size:5 pages
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Electronic Resource
-
Language:English
-
Source:
Table of contents – Volume 30, Issue 11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 110301
-
Microscopy of Semiconducting Materials 2015T Walther / Ana M Sanchez et al. | 2015
- 114001
-
GaN heterostructures with diamond and grapheneB Pécz / L Tóth / G Tsiakatouras / A Adikimenakis / A Kovács / M Duchamp / R E Dunin-Borkowski / R Yakimova / P L Neumann / H Behmenburg et al. | 2015
- 114002
-
TEM investigation of semipolar GaN layers grown on Si(001) offcut substratesL M Sorokin / A V Myasoedov / A E Kalmykov / D A Kirilenko / V N Bessolov / S A Kukushkin et al. | 2015
- 114003
-
Analysis of surface defects in Si1−yCy epilayers formed by the oversaturation of carbonGerard Colston / Maksym Myronov / Stephen Rhead / David Leadley et al. | 2015
- 114004
-
Dislocation filters in GaAs on SiI George / F Becagli / H Y Liu / J Wu / M Tang / R Beanland et al. | 2015
- 114005
-
Structure of Fe3Si/Al/Fe3Si thin film stacks on GaAs(001)B Jenichen / U Jahn / A Nikulin / J Herfort / H Kirmse et al. | 2015
- 114006
-
Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dotsD F Reyes / J M Ulloa / A Guzman / A Hierro / D L Sales / R Beanland / A M Sanchez / D González et al. | 2015
- 114007
-
Electron microscopy of gallium nitride growth on polycrystalline diamondR F Webster / D Cherns / M Kuball / Q Jiang / D Allsopp et al. | 2015
- 114008
-
Spatial inhomogeneities in AlxGa1−xN quantum wells induced by the surface morphology of AlN/sapphire templatesUte Zeimer / Joerg Jeschke / Anna Mogilatenko / Arne Knauer / Viola Kueller / Veit Hoffmann / Christian Kuhn / Tino Simoneit / Martin Martens / Tim Wernicke et al. | 2015
- 114009
-
Growth of complex SiGe/Ge superlattices by reduced pressure chemical vapour deposition at low temperatureJohn E Halpin / Stephen D Rhead / Ana M Sanchez / Maksym Myronov / David R Leadley et al. | 2015
- 114010
-
V-pit to truncated pyramid transition in AlGaN-based heterostructuresA Mogilatenko / J Enslin / A Knauer / F Mehnke / K Bellmann / T Wernicke / M Weyers / M Kneissl et al. | 2015
- 114011
-
Combination of electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy to determine indium concentration in InGaN thin film structuresX Wang / M P Chauvat / P Ruterana / T Walther et al. | 2015
- 114012
-
Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowiresTh Kehagias / N Florini / J Kioseoglou / Th Pavloudis / Ph Komninou / T Walther / K Moratis / Z Hatzopoulos / N T Pelekanos et al. | 2015
- 114013
-
In situ UHVEM study of {113}-defect formation in Si nanowiresJan Vanhellemont / Satoshi Anada / Hidehiro Yasuda / Patricia Van Marcke / Hugo Bender / Rita Rooyackers / Anne Vandooren et al. | 2015
- 114014
-
Microstructure of InxGa1−xN nanorods grown by molecular beam epitaxyR F Webster / Q Y Soundararajah / I J Griffiths / D Cherns / S V Novikov / C T Foxon et al. | 2015
- 114015
-
Surface contamination and electrical damage by focused ion beam: conditions applicable to the extraction of TEM lamellae from nanoelectronic devicesH Bender / A Franquet / C Drijbooms / B Parmentier / T Clarysse / W Vandervorst / L Kwakman et al. | 2015
- 114016
-
Post-ion beam induced degradation of copper layers in transmission electron microscopy specimensF Seidel / O Richard / H Bender / W Vandervorst et al. | 2015
- 115001
-
Possibility for rapid generation of high-pressure phases in single-crystal silicon by fast nanoindentationHu Huang / Jiwang Yan et al. | 2015
- 115002
-
Impact of heavy ion irradiation on CMOS current mirrors based on SOI and bulk Si substrates: mismatch and output impedanceWeikang Wu / Xia An / Fei Tan / Yehua Chen / Jingjing Liu / Yao Zhang / Xing Zhang / Dongjun Shen / Gang Guo / Ru Huang et al. | 2015
- 115003
-
Spatial nonlocality in the infrared absorption spectra of polar semiconductor nanospheresAfshin Moradi et al. | 2015
- 115004
-
Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlatticesJarosław Wróbel / Łukasz Ciura / Marcin Motyka / Frank Szmulowicz / Andrzej Kolek / Andrzej Kowalewski / Paweł Moszczyński / Mateusz Dyksik / Paweł Madejczyk / Sanjay Krishna et al. | 2015
- 115005
-
Investigation of the shape of submonolayer quantum dots using a polarization-dependent photocurrentJun Oh Kim / Zahyun Ku / Augustine Urbas / Sang Jun Lee et al. | 2015
- 115006
-
Very low temperature (450 °C) selective epitaxial growth of heavily in situ boron-doped SiGe layersJ Aubin / J M Hartmann / M Veillerot / Z Essa / B Sermage et al. | 2015
- 115007
-
Fundamental transverse mode selection and self-stabilization in large optical cavity diode lasers under high injection current densitiesEugene A Avrutin / Boris S Ryvkin / Alexey S Payusov / Artem A Serin / Nikita Yu Gordeev et al. | 2015
- 115008
-
Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphereJae-Gil Lee / Hyun-Seop Kim / Jung-Yeon Lee / Kwang-Seok Seo / Ho-Young Cha et al. | 2015
- 115009
-
Modeling of bipolar resistive switching of a nonlinear MISM memristorFiras Odai Hatem / Patrick W C Ho / T Nandha Kumar / Haider A F Almurib et al. | 2015
- 115010
-
Dual-gate AlGaN/GaN MIS-HEMTs using Si3N4 as the gate dielectricTao Gao / Ruimin Xu / Kai Zhang / Yuechan Kong / Jianjun Zhou / Cen Kong / Xun Dong / Tangsheng Chen / Yue Hao et al. | 2015
- 115011
-
The role of the Ti and Mo barrier layer in Ti/Al metallization to AlGaN/GaN heterostructures at identical process conditions: a structural and chemical characterizationNarendraraj Chandran / Lilyana Kolakieva / Roumen Kakanakov / E K Polychroniadis et al. | 2015
- 115012
-
Controlling the diameter distribution and density of InAs nanowires grown by Au-assisted methodsU P Gomes / D Ercolani / V Zannier / F Beltram / L Sorba et al. | 2015
- 115013
-
Evidence of negative electrorefraction in type-II GaAs/GaAlAs short-period superlatticeV A Shchukin / N N Ledentsov / L Ya Karachinsky / S A Blokhin / I I Novikov / A Yu Egorov / M V Maximov / N Yu Gordeev / M M Kulagina / V M Ustinov et al. | 2015
- 115014
-
Integration of niobium oxide-based resistive switching cells with different select properties into nanostructured cross-bar arraysHelge Wylezich / Elena Reinhardt / Stefan Slesazeck / Thomas Mikolajick et al. | 2015
- 115015
-
Structural damage in thin SLIM-Cut c-Si foils fabricated for solar cell purposes: atomic assessment by electron spin resonanceJ Kepa / R Martini / A Stesmans et al. | 2015
- 115016
-
Analysis and modelling of GaN Schottky-based circuits at millimeter wavelengthsD Pardo / J Grajal et al. | 2015
- 115017
-
Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructureSaulius Marcinkevičius / Alexander Sztein / Shuji Nakamura / James S Speck et al. | 2015
- 115018
-
Estimation of background carrier concentration in fully depleted GaN filmsHareesh Chandrasekar / Manikant Singh / Srinivasan Raghavan / Navakanta Bhat et al. | 2015
- 115019
-
Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heightsV N Brudnyi / S Yu Sarkisov / A V Kosobutsky et al. | 2015
- 115020
-
Temperature-dependent charge injection and transport in pentacene thin-film transistorsDong Wook Kim / Hyunji Shin / Ji-Ho Park / Jaehoon Park / Jong Sun Choi et al. | 2015