Structural characterization of strained silicon grown on a SiGe buffer layer (English)
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In:
Semiconductor Science and Technology
;
23
, 3
;
035012
;
2008
- Article (Journal) / Electronic Resource
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Title:Structural characterization of strained silicon grown on a SiGe buffer layer
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Contributors:Jang, J H ( author ) / Phen, M S ( author ) / Gerger, A ( author ) / Jones, K S ( author ) / Hansen, J L ( author ) / Larsen, A N ( author ) / Craciun, V ( author )
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Published in:Semiconductor Science and Technology ; 23, 3 ; 035012
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Publication date:2008-03-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 23, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 035001
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Effect of thermal annealing on the electrical properties of indium tin oxide (ITO) contact on Be-doped GaAs for optoelectronic applicationsHavard, E / Camps, T / Bardinal, V / Salvagnac, L / Armand, C / Fontaine, C / Pinaud, S et al. | 2008
- 035002
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Effect of post annealing on the band gap of MgxZn1−xO thin filmsJiang, D Y / Shen, D Z / Liu, K W / Shan, C X / Zhao, Y M / Yang, T / Yao, B / Lu, Y M / Zhang, J Y et al. | 2008
- 035003
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The distribution of the barrier height in Al–TiW–Pd2Si/n-Si Schottky diodes from I–V–T measurementsDökme, Ilbilge / Altındal, Şemsettin / Afandiyeva, Izzet M et al. | 2008
- 035004
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Microwave irradiation impact on Ta2O5 stack capacitors with different gatesAtanassova, E / Mitin, V F / Konakova, R V / Spassov, D / Schinkarenko, V V et al. | 2008
- 035005
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Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxyChauveau, J-M / Laügt, M / Venneguès, P / Teisseire, M / Lo, B / Deparis, C / Morhain, C / Vinter, B et al. | 2008
- 35005
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Non-polar a-plane ZnMgO1-ZnO quantum wells grown by molecular beam epitaxyChauveau, J.-M. et al. | 2008
- 035006
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Temperature-dependent behavior of Ti/p-InP/ZnAu Schottky barrier diodesAsubay, Sezai / Güllü, Ömer / Abay, Bahattin / Türüt, Abdulmecit / Yilmaz, Ali et al. | 2008
- 035007
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Annealing and deposition temperature dependence of the bandgap of amorphous FeSi2 fabricated by co-sputter depositionWong, L / Milosavljević, M / Lourenço, M A / Shao, G / Valizadeh, R / Colligon, J S / Homewood, K P et al. | 2008
- 035008
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Conduction mechanisms in poly(3-hexylthiophene) thin-film sandwiched structuresRashmi / Kapoor, Ashok K / Annapoorni, S / Kumar, Vikram et al. | 2008
- 035009
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Device linearity improvement of In0.49Ga0.51P/In0.15Ga0.85As doped-channel FETs with a metal plug alloy processChien, Feng-Tso / Liao, Chien-Nan / Yin, Jin-Mu / Chiu, Hsien-Chin / Tsai, Yao-Tsung et al. | 2008
- 035010
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Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealingCzernohorsky, M / Tetzlaff, D / Bugiel, E / Dargis, R / Osten, H J / Gottlob, H D B / Schmidt, M / Lemme, M C / Kurz, H et al. | 2008
- 035011
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Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetectorLin, Gui Jiang / Lai, Hong Kai / Li, Cheng / Chen, Song Yan / Yu, Jin Zhong et al. | 2008
- 035012
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Structural characterization of strained silicon grown on a SiGe buffer layerJang, J H / Phen, M S / Gerger, A / Jones, K S / Hansen, J L / Larsen, A N / Craciun, V et al. | 2008
- 035013
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Enhanced mechanical and electrical properties of antimony-doped tin oxide coatingsCastro, M R S / Oliveira, P W / Schmidt, H K et al. | 2008
- 035014
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Kinetic investigation of electron–electron scattering in nanometer-scale metal- oxide-semiconductor field-effect transistorsFixel, D A / Hitchon, W N G et al. | 2008
- 035015
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High-density SiC nanocrystals with strong photoluminescence via a nitrogen-loss routeCui, L / Li, J J / Sun, J / Du, X W et al. | 2008
- 035016
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Taylor expansions of band-bending in MOS capacitance: application to scanning capacitance microscopyMurray, Hugues / Martin, Patrick / Bardy, Serge / Murray, Franck et al. | 2008
- 035017
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Threshold voltage model for bulk strained-silicon NMOSFETsTinoco, J C / Garcia, R / Iñiguez, B / Cerdeira, A / Estrada, M et al. | 2008
- 035018
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Optimization of surface passivation for InGaAs/InP pin photodetectors using ammonium sulfideSheela, D / DasGupta, Nandita et al. | 2008
- 035019
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Photoluminescence spectroscopy and effective concentration determination of CdxZn1−xSeSweiti, A / Medina, F / Martinez, L / Lopez-Rivera, A et al. | 2008
- 035020
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Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dotsHugues, M / Damilano, B / Khalfioui, M Al / Duboz, J-Y / Massies, J / Richter, M / Wieck, A D et al. | 2008
- 035021
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Investigation of surface crystallites on C54 titanium silicide thin films using transmission electron microscopyBhaskaran, M / Sriram, S / Mitchell, D R G / Holland, A S et al. | 2008
- 035022
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A GMR device based on hybrid ferromagnetic-Schottky-metal and semiconductor nanostructureLu, Mao-Wang / Zhang, Gui-Lian / Chen, Sai-Yan et al. | 2008
- 035023
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Effects of defects in semiconductors on reproducibility and performance of thin-film photovoltaic solar cellsDharmadasa, I M / Tolan, G J / Cazaux, M et al. | 2008
- 035024
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Red organic light-emitting diodes based on wide band gap emitting material as the host utilizing two-step energy transferHaq, Khizar-ul / Shan-peng, Liu / Khan, M A / Jiang, X Y / Zhang, Z L / Zhu, W Q et al. | 2008
- 035025
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A compact analytical current conduction model for a depletion-mode n-type nanowire field-effect transistor with a bottom-gate structureYu, Yun Seop / Lee, Se Han / Oh, Jung Hyun / Kim, Han Jung / Hwang, Sung Woo / Ahn, Doyel et al. | 2008
- 035026
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New developments on diamond photodetector for VUV solar observationsBenMoussa, A / Soltani, A / Haenen, K / Kroth, U / Mortet, V / Barkad, H A / Bolsee, D / Hermans, C / Richter, M / De Jaeger, J C et al. | 2008
- 035026/1
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New development on diamond photodetector for VUV solar observationsBenMoussa, A. / Soltani, A. / Haenen, K. / Kroth, U. / Mortet, V. / Barkad, H.A. / Bolsee, D. / Hermans, C. / Richter, M. / Jaeger, J.C. de et al. | 2008
- 035027
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Investigation of InGaAsN MSM photodetectors with transparent ITO Schottky contactsChen, W C / Su, Y K / Chuang, R W / Yu, H C / Chen, B Y / Hsu, S H et al. | 2008
- 035028
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A new SOI high-voltage device with a step-thickness drift region and its analytical model for the electric field and breakdown voltageLuo, Xiaorong / Zhang, Wei / Zhang, Bo / Li, Zhaoji / Yang, Shouguo / Zhan, Zhan / Fu, Daping et al. | 2008
- 035029
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GaAs pseudomorphic HEMT with insulating gate films formed by P2S5/(NH4)2SX sulfurization of recessed GaAs surfaceChiu, Hsien-Chin / Huang, Yuan-Chang / Chang, Liann-Be / Chien, Feng-Tso et al. | 2008
- 035030
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Comprehensive study of gate-terminated and source-terminated field-plate 0.13 µm NMOS transistorsChiu, Hsien-Chin / Lin, Shao-Wei / Cheng, Chia-Shih / Wei, Chien-Cheng et al. | 2008
- 035030/1
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Comprehensive study of gate-terminated and source-terminated field-plate 0.13 micron NMOS transistorsChiu, Hsien-Chin / Lin, Shao-Wei / Cheng, Chia-Shih / Wei, Chien-Cheng et al. | 2008
- 035031
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Effect of sulfur passivation on the InP surface prior to plasma-enhanced chemical vapor deposition of SiNxTang, Hengjing / Wu, Xiaoli / Xu, Qinfei / Liu, Hongyang / Zhang, Kefeng / Wang, Yang / He, Xiangrong / Li, Xue / Gong, Hai Mei et al. | 2008
- 039801
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Electronic characteristics of n-type nanocrystalline/p-type crystalline silicon heterostructureWensheng Wei / Tianmin Wang / Yuliang He et al. | 2008