Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications (English)
- New search for: Abbasian, Erfan
- Further information on Abbasian, Erfan:
- https://orcid.org/0000-0003-0073-8737
- New search for: Gholipour, Morteza
- Further information on Gholipour, Morteza:
- https://orcid.org/0000-0001-6290-9461
- New search for: Abbasian, Erfan
- Further information on Abbasian, Erfan:
- https://orcid.org/0000-0003-0073-8737
- New search for: Gholipour, Morteza
- Further information on Gholipour, Morteza:
- https://orcid.org/0000-0001-6290-9461
In:
Semiconductor Science and Technology
;
37
, 8
;
2022
- Article (Journal) / Electronic Resource
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Title:Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications
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Contributors:Abbasian, Erfan ( author ) / Gholipour, Morteza ( author )
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Published in:
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Publisher:
- New search for: IOP Publishing
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Publication date:2022-08-01
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Size:17 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 37, Issue 8
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Heteroepitaxial β-Ga2O3 thick films on sapphire substrate by carbothermal reduction rapid growth methodZhang, Wenhui / Zhang, Hezhi / Zhang, Zhenzhong / Zhang, Qi / Hu, Xibing / Liang, Hongwei et al. | 2022
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Single β-Ga2O3 nanowire back-gate field-effect transistorQu, Guangming / Xu, Siyuan / Liu, Lining / Tang, Minglei / Wu, Songhao / Jia, Chunyang / Zhang, Xingfei / Song, Wurui / Lee, Young Jin / Xu, Jianlong et al. | 2022
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Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistorWoo, Sola / Kim, Sangsig et al. | 2022
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Dielectric engineering for improvement of mobility and photoelectric performance in 2D BiI3Yu, He / Gao, Wei / Huang, Ying / Wen, Peiting / Wang, Dan / Shao, Libo / Liu, Zihao / Wu, Jing / Wang, Hanyu / Yang, Yujue et al. | 2022
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Advanced supercritical fluid technique to reduce amorphous silicon defects in heterojunction solar cellsChou, Sheng-Yao / Lin, Shih-Kai / Chang, Ting-Chang / Tsai, Tsung-Ming / Huang, Jen-Wei / Chen, Shih-Wei / Shen, Chang-Hong / Shieh, Jia-Min / Lin, Chao-Cheng / Yang, Chih-Cheng et al. | 2022
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Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applicationsAbbasian, Erfan / Gholipour, Morteza et al. | 2022
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All-HKMG-bounded SCR for advanced ESD protection in 14 nm FinFET technologyDu, Feibo / Xie, Tiantian / Wang, Jun / Chang, Kuan-Chang / Lin, Xinnan / Hou, Fei / Chen, Ruibo / Han, Aoran / Liu, Zhiwei et al. | 2022
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Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETsValletta, Antonio / Roccaforte, Fabrizio / La Magna, Antonino / Fortunato, Guglielmo / Fiorenza, Patrick et al. | 2022
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An enhanced high frequency performance SiC MOSFET with self-adjusting P-shield region potentialXing, Yunpeng / Deng, Xiaochuan / Wu, Hao / Xu, Xiaojie / Li, Xu / Li, Xuan / Wen, Yi et al. | 2022
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Theoretical study of potential n-type and p-type dopants in GaN from data mining and first-principles calculationZhao, Zhi-hao / Xue, Feng-ning / Zhao, Peng-bo / Lu, Yong / Zhang, Ji-cai et al. | 2022
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Performance improvement in NiO x -based GaN MOS-HEMTsMeer, M / Pohekar, P / Parvez, B / Ganguly, S / Saha, D et al. | 2022
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Fabrication of sheet-like ZnO/ZnS heterostructures with enhanced H2S sensing performance at low operation temperaturesWu, Xinwen / Zhao, Zhen / Zhang, Lei / Jiao, Wanli et al. | 2022
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High-power cold diodes for the protection of a 1.5 T superconducting MRI magnet systemSoni, Vijay / Gupta, Arvind / Kar, Soumen et al. | 2022
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High power density soft x-ray GaAs photodiodes with tailored spectral responseDonetski, Dmitri / Kucharczyk, Kevin / Liu, Jinghe / Lutchman, Ricardo / Hulbert, Steven / Mazzoli, Claudio / Nelson, Christie / Podobedov, Boris et al. | 2022
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Characterization of charge sharing induced by high LET heavy ions using inverter chains in a commercial bulk FinFET processHuang, Pengcheng / Yue, Daheng / Chi, Yaqing / Sun, Qian / Liang, Bin et al. | 2022
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Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approachChauhan, Vibhuti / Samajdar, Dip Prakash / Bagga, Navjeet et al. | 2022
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A 16 nm FinFET circuit with triple function as digital multiplexer, active-high and active-low output decoder for high-performance SRAM architectureB, Jeevan / K, Sivani et al. | 2022
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Through-silicon-via induced stress-aware FinFET buffer sizing in 3D ICsYadav, Sarita / Chauhan, Nitanshu / Chawla, Raghav / Sharma, Arvind / Banchhor, Shashank / Pratap, Rajendra / Anand, Bulusu et al. | 2022
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DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectricYılmaz, Doğan / Odabaşı, Oğuz / Salkım, Gurur / Urfali, Emirhan / Akoğlu, Büşra Çankaya / Özbay, Ekmel / Altındal, Şemsettin et al. | 2022
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Transport and performance study of double-walled black phosphorus nanotube transistorsAlam, Khairul et al. | 2022
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Ohmic contact morphology improvement with reduced resistance using Si/Au/Ti/Al/Ni/Au (AlGaN) and Si/Au/Ti/Al/Ni/Au (InAlN) stack layers in III-Nitride HEMTsVisvkarma, Ajay Kumar / Laishram, Robert / Kapoor, Sonalee / Rawal, D S / Vinayak, Seema / Saxena, Manoj et al. | 2022
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Analysis of the buffer trap-induced kink effect in AlGaN/GaN HEMT on SiC substrateCiou, Fong-Min / Chen, Po-Hsun / Chang, Ting-Chang / Lin, Yu-Shan / Jin, Fu-Yuan / Hsu, Jui-Tse / Lin, Jia-Hong / Chang, Kai-Chun / Kuo, Ting-Tzu / Chen, Kuan-Hsu et al. | 2022
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Electrochemical deposition of n-type semiconducting nickel hydroxide thin filmsAbe, Koji / Shimura, Masahide et al. | 2022
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Corrigendum: The influence of lightly-doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT (2022 Semicond. Sci. Technol. 37 075005)Liu, Kai / Wang, Runhao / Wang, Chong / Zheng, Xuefeng / Ma, Xiaohua / Bai, Junchun / Cheng, Bin / Liu, Ruiyu / Li, Ang / Zhao, Yaopeng et al. | 2022