β-Ga2O3 for wide-bandgap electronics and optoelectronics (English)
Topical Review
- New search for: Zbigniew Galazka
- New search for: Zbigniew Galazka
In:
Semiconductor Science and Technology
;
33
, 11
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113001
;
2018
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ISSN:
- Article (Journal) / Electronic Resource
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Title:β-Ga2O3 for wide-bandgap electronics and optoelectronics
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Subtitle:Topical Review
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Additional title:β-Ga2O3 for wide-bandgap electronics and optoelectronics
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Contributors:Zbigniew Galazka ( author )
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Published in:Semiconductor Science and Technology ; 33, 11 ; 113001
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Publisher:
- New search for: Institute of Physics
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Publication date:2018-11-01
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Size:61 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 33, Issue 11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 113001
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β-Ga2O3 for wide-bandgap electronics and optoelectronicsZbigniew Galazka et al. | 2018
- 113002
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The influence of inhomogeneities and defects on novel quantum well and quantum dot based infrared-emitting semiconductor lasersIgor P Marko / Stephen J Sweeney et al. | 2018
- 114001
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Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/SixGe1–x–ySny heterostructure model for low power FET applicationsYasmine Elogail / Inga A Fischer / Torsten Wendav / Jörg Schulze et al. | 2018
- 114002
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Carbon-mediated epitaxy of SiGe virtual substrates on Si(001)Jan Schmidt / Dominic Tetzlaff / Tobias F Wietler / H Jörg Osten et al. | 2018
- 114003
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High-performance SiGe HBTs for next generation BiCMOS technologyHolger Rücker / Bernd Heinemann et al. | 2018
- 114004
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Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodesZhiqiang Liu / Xiaoyan Yi / Liancheng Wang / Tongbo Wei / Guodong Yuan / Jianchang Yan / Junxi Wang / Jinmin Li / Yi Shi / Yong Zhang et al. | 2018
- 114005
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Resonant-tunneling-diode terahertz oscillator integrated with a radial line slot antenna for circularly polarized wave radiationDaisuke Horikawa / Yunchao Chen / Takuya Koike / Safumi Suzuki / Masahiro Asada et al. | 2018
- 114006
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A study on the voltage-dependent response of a GaInNAs-based pin photodetector with a quasi-cavityF Sarcan / F Nutku / M S Nordin / A J Vickers / A Erol et al. | 2018
- 114007
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Electrical properties of n-type 3C-SiC epilayers in situ doped with extremely high levels of phosphorusGerard Colston / Maksym Myronov et al. | 2018
- 114008
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Carrier density and light helicity dependence of photocurrent in mono- and bilayer grapheneX Qian / B Cao / Z Wang / X Shen / C Soci / M Eginligil / T Yu et al. | 2018
- 114009
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Observation of local magnetoresistance signals in a SiGe-based lateral spin-valve deviceMichihiro Yamada / Takahiro Naito / Makoto Tsukahara / Shinya Yamada / Kentarou Sawano / Kohei Hamaya et al. | 2018
- 114010
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Epitaxial GeSn: impact of process conditions on material qualityRoger Loo / Yosuke Shimura / Shinichi Ike / Anurag Vohra / Toma Stoica / Daniela Stange / Dan Buca / David Kohen / Joe Margetis / John Tolle et al. | 2018
- 114011
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Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter depositionK Yamamoto / R Noguchi / M Mitsuhara / M Nishida / T Hara / D Wang / H Nakashima et al. | 2018
- 114012
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Analysis of the relationship between the contact barrier and rectification ratio in a two-dimensional P–N heterojunctionXiaozhang Chen / Huawei Chen / Zhen Wang / Yuwei Shan / David Wei Zhang / Shiwei Wu / Weida Hu / Peng Zhou et al. | 2018
- 114013
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Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structuresS Azaizia / A Balocchi / S Mazzucato / F Cadiz / F Beato de le Salle / H Lehec / D Lagarde / A Arnoult / T Amand / C Fontaine et al. | 2018
- 114014
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Alignment control of self-ordered three dimensional SiGe nanodotsYuji Yamamoto / Yuhki Itoh / Peter Zaumseil / Markus Andreas Schubert / Giovanni Capellini / Francesco Montalenti / Katsuyoshi Washio / Bernd Tillack et al. | 2018
- 114015
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Terahertz generation with ballistic photodiodes under pulsed operationC Müller-Landau / S Malzer / H B Weber / G H Döhler / S Winnerl / P Burke / A C Gossard / S Preu et al. | 2018
- 114016
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A unipolar nano-diode detector with improved performance using the high-k material SiNxLinqing Zhang / Haiping Zhou / Jiawei Zhang / Qingpu Wang / Yifei Zhang / Aimin Song et al. | 2018
- 115001
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Characterisation and comparison between different S-bend shaped GaAs Y-branch distributed Bragg reflector lasers emitting at 976 nmMahmoud Tawfieq / Jörg Fricke / André Müller / Pietro Della Casa / Peter Ressel / Arnim Ginolas / Hans Wenzel / Bernd Sumpf / Günther Tränkle et al. | 2018
- 115002
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Titanium nitride thin film for temperature sensing and its conductive mechanism in the cryogenic regionZude Lin / Guanghui Zhan / Xiaolin Wang / Minmin You / Bin Yang / Xiang Chen / Weiping Zhang / Jingquan Liu et al. | 2018
- 115003
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Numerical study on the interface properties of a ZnO/c-Si heterojunction solar cellSyed Sadique Anwer Askari / Manoj Kumar / Mukul Kumar Das et al. | 2018
- 115004
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A low-power D flip flop integrated by metal oxide thin film transistors employing internal feedback controlFan Zhan / Jian-Dong Wu / Lei Zhou / Jian-Hua Zou / Hong Tao / Miao Xu / Lei Wang / Mo Huang / Yu-Rong Liu / Wei-Jing Wu et al. | 2018
- 115005
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Identification of interfacial defects in a Ge gate stack based on ozone passivationLixing Zhou / Xiaolei Wang / Xueli Ma / Kai Han / Yanrong Wang / Jinjuan Xiang / Hong Yang / Jing Zhang / Chao Zhao / Tianchun Ye et al. | 2018
- 115006
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Error analysis and frequency selection guidelines for three-frequency correction in MOS capacitorsXizhen Zhang / Sujuan Zhang / Xiuyu Pan / Huichao Zhu / Chuanhui Cheng / Yi Cheng / Tao Yu / Guichao Xing / Daming Zhang / Mindi Bai et al. | 2018
- 115007
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Multistate data storage in solution-processed NiO-based resistive switching memoryJinxing Chu / Ya Li / Xihua Fan / Huihong Shao / Weijie Duan / Yanli Pei et al. | 2018
- 115008
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Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitrideDmitry A Zakheim / Wsevolod V Lundin / Alexey V Sakharov / Eugene E Zavarin / Pavel N Brunkov / Elena Y Lundina / Andrey F Tsatsulnikov / Sergey Yu Karpov et al. | 2018
- 115009
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Oxygen vacancies induced structural distortions, valence fluctuations and enhanced optical properties in BiFe0.83Ni0.17O3P Iyyappa Rajan / S Mahalakshmi / Sharat Chandra et al. | 2018
- 115010
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Total dose effect of Al2O3-based metal–oxide–semiconductor structures and its mechanism under gamma-ray irradiationH P Zhu / Z S Zheng / B Li / B H Li / G P Zhang / D L Li / J T Gao / L Yang / Y Cui / C P Liang et al. | 2018
- 115011
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MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOSWan Khai Loke / Kwang Hong Lee / Yue Wang / Chuan Seng Tan / Eugene A Fitzgerald / Soon Fatt Yoon et al. | 2018
- 115012
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Joint effect of temperature and voltage rise rate on the switching process of Si thyristors triggered in impact ionization wave modeAnton Gusev / Sergei Lyubutin / Sergei Rukin / Boris Slovikovsky / Sergei Tsyranov / Olga Perminova et al. | 2018
- 115013
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Iron-related deep electron traps in epitaxial silicon resolved by Laplace-transform deep level transient spectroscopyPaweł Kamiński / Roman Kozłowski / Jarosław Żelazko / Maciej Wodzyński et al. | 2018
- 115014
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Thermal modeling of 7 nm node bulk fin-shaped field-effect transistors for device structure-aware designChuntaek Park / Ilgu Yun et al. | 2018
- 115015
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Microstructure and optical properties of ultra-thin NiO films grown by atomic layer depositionD J Hagen / T S Tripathi / I Terasaki / M Karppinen et al. | 2018
- 115016
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Atomic-layer-deposited ultra-thin VOx film as a hole transport layer for perovskite solar cellsSisi Chu / Ran Zhao / Rong Liu / Yuanhong Gao / Xinwei Wang / Chuan Liu / Jun Chen / Hang Zhou et al. | 2018
- 115017
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Evidence of dynamic-R on degradation on low-dose 60Co gamma radiation AlGaN/GaN HEMTsP J Martínez / E Maset / D Gilabert / E Sanchis-Kilders / J Bta Ejea et al. | 2018
- 115018
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Investigation into the carrier distribution and energy-band profile in AlGaN/GaN heterostructures with a graded AlGaN bufferTiecheng Han / Hongdong Zhao / Liying Han / Xiaocan Peng / Yuhai Li et al. | 2018
- 115019
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Electronic and optical properties of charge carriers in a GaSb quantum ring in a GaAs/Al0.6Ga0.4As quantum wellMohamed Souhail Kehili / Afef Ben Mansour / Rihab Sellami / Adnen Melliti et al. | 2018
- 115020
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Assessment of mobility and its degradation parameters in a shell doped junctionless transistorY V Bhuvaneshwari / Abhinav Kranti et al. | 2018
- 115021
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Laser induced nano-patterning with atomic-scale thickness on an InAs/GaAs surfaceWei Zhang / Zhenwu Shi / Xinning Yang / Chen Chen / Linyun Yang / Zhongming Zeng / Baoshun Zhang / Qian Liu et al. | 2018
- 115022
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Interfacial electromagnetic–thermal characterization of a shielded pair through-silicon via a silicon interposerThis work was supported by the National Natural Science Foundation of China (61625403, 61574104, 61474088).Chenguang Liao / Zhangming Zhu / Yintang Yang et al. | 2018