A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursors (English)
National licence
- New search for: P A Fernandes
- New search for: P M P Salomé
- New search for: A F da Cunha
- New search for: P A Fernandes
- New search for: P M P Salomé
- New search for: A F da Cunha
In:
Journal of Physics D: Applied Physics
;
43
, 21
;
215403
;
2010
-
ISSN:
- Article (Journal) / Electronic Resource
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Title:A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursors
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Additional title:A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursors
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Contributors:
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Published in:Journal of Physics D: Applied Physics ; 43, 21 ; 215403
-
Publisher:
- New search for: Institute of Physics
-
Publication date:2010-06-02
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Size:11 pages
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ISSN:
-
DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 43, Issue 21
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 213001
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TOPICAL REVIEW: Physics of magnetic resonance imaging: from spin to pixelGossuin, Yves et al. | 2010
- 213001
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Physics of magnetic resonance imaging: from spin to pixelYves Gossuin / Aline Hocq / Pierre Gillis / Quoc Lam Vuong et al. | 2010
- 215001
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SPICE modelling of magnetic tunnel junctions written by spin-transfer torqueW Guo / G Prenat / V Javerliac / M El Baraji / N de Mestier / C Baraduc / B Diény et al. | 2010
- 215002
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Temperature effect on high-frequency magnetic properties of Fe–Co films prepared by electrodepositionXu Yang / Luqian Gong / Jianqiang Wei / Liang Qiao / Tao Wang / Fashen Li et al. | 2010
- 215003
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Incidence of in situ annealing on the nanoscale topographical/electrical properties of the tunnel barrier in sputtered epitaxial Fe/MgO/Fe multilayersD J Kim / J Arabski / V Da Costa / G Schmerber / M Bowen / S Boukari / E Beaurepaire et al. | 2010
- 215004
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Influence of Co layer thickness on the structural and magnetic properties of (Pt/Co~t~C~o)~3/Pt~t~P~t/IrMn multilayersZarefy, A. / Lechevallier, L. / Larde, R. / Chiron, H. / Le Breton, J.-M. / Baltz, V. / Rodmacq, B. / Dieny, B. et al. | 2010
- 215004
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Influence of Co layer thickness on the structural and magnetic properties of multilayersA Zarefy / L Lechevallier / R Lardé / H Chiron / J-M Le Breton / V Baltz / B Rodmacq / B Dieny et al. | 2010
- 215101
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Influence of edge roughness on graphene nanoribbon resonant tunnelling diodesGengchiau Liang / Sharjeel Bin Khalid / Kai-Tak Lam et al. | 2010
- 215102
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Influence of temperature and illumination on the electrical properties of p-ZnTe/n-CdTe heterojunction grown by molecular beam epitaxyA A M Farag / I S Yahia / T Wojtowicz / G Karczewski et al. | 2010
- 215201
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Heat transfer to a spherical particle in a flowing plasmaValerian Nemchinsky et al. | 2010
- 215202
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On basic processes sustaining constricted glow discharge in longitudinal N2 flow at atmospheric pressureYu Akishev / M Grushin / V Karalnik / A Petryakov / N Trushkin et al. | 2010
- 215401
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The effect of dc poling duration on space charge relaxation in virgin XLPE cable peelingsAntonios Tzimas / Simon M Rowland / Leonard A Dissado / Mingli Fu / Ulf H Nilsson et al. | 2010
- 215402
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Trap-free space-charge-limited electron transport in amorphous tin(IV) phthalocyanine dichloride thin filmXianfeng Qiao / Jiangshan Chen / Dongge Ma et al. | 2010
- 215403
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A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursorsP A Fernandes / P M P Salomé / A F da Cunha et al. | 2010