Advanced eclipse pulsed laser deposition method for growth of perovskite crystals and relatives (English)
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In:
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
;
121
, 1-4
; 412-414
;
1997
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ISSN:
- Article (Journal) / Print
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Title:Advanced eclipse pulsed laser deposition method for growth of perovskite crystals and relatives
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:1997
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 535/3450
- New search for: 33.00
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Table of contents – Volume 121, Issue 1-4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Review of Ion Engineering Center and related projects in Ion Engineering Research InstituteInoue, M. et al. | 1997
- 7
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Introduction to the Applied Laser Engineering Center (ALEC)Fukatsu, K. et al. | 1997
- 10
-
Research and development of industrial science and technology promoted by NEDOMukai, T. et al. | 1997
- 18
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Oxygen-impurity interactions in crystalline silicon: The cases of aluminum and erbiumRimini, E. et al. | 1997
- 24
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Oxidation of silicon by low energy oxygen ionsWilliams, J.S. et al. | 1997
- 30
-
Temperature-dependent study of ion-channeling in Fe-Cr superlatticesRüders, F. et al. | 1997
- 36
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The 3-D profiling of B ions implanted into SiNakagawa, S.T. et al. | 1997
- 40
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Molecular dynamics simulations of low energy atomic collisions between an atom and a substrate: Effect of incident angle and energyOhashi, T. et al. | 1997
- 44
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Computer simulation of crystal surface modification by accelerated cluster ion impactsInsepov, Z. et al. | 1997
- 49
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Molecular dynamics simulation of damage formation by cluster ion impactAoki, T. et al. | 1997
- 53
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Molecular dynamics simulation for ionized cluster beam depositionKang, H.J. et al. | 1997
- 58
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Si(001) epitaxy from hyperthermal beams: Crystal growth, doping, and electronic propertiesGreene, J.E. et al. | 1997
- 65
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Synthesis of sputtered thin films in low energy ion beamsHowson, R.P. et al. | 1997
- 73
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Carbon nitride thin films formed by low energy ion beam deposition wim positive and negative ionsEnders, B. et al. | 1997
- 73
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Carbon nitride thin films formed by low energy ion beam deposition with positive and negative ionsEnders, B. / Horino, Y. / Tsubouchi, N. / Chayahara, A. / Kinomura, A. / Fujii, K. et al. | 1997
- 79
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Tribological hard layer synthesis by duplex ion beam treatmentHan, J.G. et al. | 1997
- 84
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On the possibility of channeled ion assisted epitaxial growthSaitoh, K. et al. | 1997
- 90
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Reactive magnetron sputtering of silicon to produce silicon oxideHowson, R.P. et al. | 1997
- 96
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Sputtering of indium-tin oxideHowson, R.P. et al. | 1997
- 102
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Improved ion beam deposition system with RF sputter-type ion sourceMiyake, K. et al. | 1997
- 107
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Pt thin films prepared by low energy plasma sputteringSuzuki, Y. et al. | 1997
- 110
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AFM observations of DLC films prepared by the ECR sputtering methodKamijo, E. et al. | 1997
- 116
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Properties of a new organo silver compound for MOCVDItsuki, A. et al. | 1997
- 121
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Preparation of boron nitride films by multi-source plasma CVD methodNonogaki, R. et al. | 1997
- 125
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Surface morphology and resistivity of aluminum oxide films prepared by plasma CVD combined with ion beam irradiationNakai, H. et al. | 1997
- 129
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Preparation of amorphous carbon thin films by ion beam assisted ECR-plasma CVDBaba, K. et al. | 1997
- 133
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Deposition of Ni-TiN nano-composite films by cathodic arc ion-platingIrie, M. et al. | 1997
- 137
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Inhomogeneous optical SiOxNy thin films prepared by ion assisted depositionCho, H.J. et al. | 1997
- 141
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Observation of long range disorder caused by low energy (20-200 eV) O+ and Ar+ beams, in NdBaCuO filmsPindoria, G. et al. | 1997
- 146
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Photoluminescence studies of epitaxial Si1 - xGex and Si1 - x - yGexCy layers on Si formed by ion beam synthesisKatsumata, H. et al. | 1997
- 151
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Patterning silicon carbide on silicon by ion modification of C 60) filmsMoro, L. et al. | 1997
- 154
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The charge effects in the low-energy ion depositing processesKiuchi, M. et al. | 1997
- 157
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Effect of oxygen adsorption on ion beam induced recrystallization of copper filmsHishita, S. et al. | 1997
- 162
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Effects of accelerated ion beam deposition to form thin metal films on siliconIida, S. et al. | 1997
- 166
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Irradiation effects of O2 cluster ions for lead oxide film formationAkizuki, M. et al. | 1997
- 170
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Heteroepitaxial growth of Y2O3 films on Si(100) by reactive ionized cluster beam depositionChoi, S.C. et al. | 1997
- 175
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Photoresponse of zinc phosphide thin films grown by ionized cluster beam depositionKakishita, K. et al. | 1997
- 179
-
Gold-carbon composite thin films for electrochemical gas sensor prepared by reactive plasma sputteringOkamoto, A. et al. | 1997
- 184
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Ion beam induced epitaxial crystallization of SrTiO3Oyoshi, K. et al. | 1997
- 187
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Vacuum characteristics of TiN film coated on the interior surface of a vacuum ductMinato, M. et al. | 1997
- 191
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Ion beam smoothing of CVD diamond thin films by etchback methodKiyohara, S. et al. | 1997
- 195
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High resolution transmission electron microscope study of solid phase epitaxial growth of very high dose, low energy P+ implanted (001)SiYang, J.J. et al. | 1997
- 199
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Crystallization of SiSn and SiSnC layers in Si by solid phase epitaxy and ion-beam-induced epitaxyKobayashi, N. et al. | 1997
- 203
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Room temperature GaAs-Si and InP-Si wafer direct bonding by the surface activated bonding methodChung, T.R. et al. | 1997
- 207
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Interface structure between polyimide film substrate and copper film prepared by ion beam and vapor deposition (IVD) methodEbe, A. et al. | 1997
- 212
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Study on the effect of the interlayer on the adhesion of 400 mm thick filmMurakami, Y. et al. | 1997
- 212
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Study on the effect of the interlayer on the adhesion of 400 m thick filmMurakami, Y. / Kuratani, N. / Nishiyama, S. / Imai, O. / Ogata, K. et al. | 1997
- 216
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Plasma doping optimization for ultra-shallow junctionsJones, E.C. et al. | 1997
- 221
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Ion beam modification of transparent conducting indium-tin-oxide thin filmsHaynes, T.E. et al. | 1997
- 226
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Plasma immersion ion implantation for materials modification and semiconductor processing: Carbon nitride films and poly-Si TFTs hydrogenationHusein, I.F. et al. | 1997
- 231
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Metal contacts on shallow junctionsChen, L.J. et al. | 1997
- 237
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Formation of metallic nanophases in insulators by high-energy ion-beam mixingThomé, L. et al. | 1997
- 244
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Cohesive energy effects on the atomic transport induced by ion beam mixingChang, G.S. et al. | 1997
- 251
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Atomistic modeling of crystal-defect mobility and interactionsBulatov, V. et al. | 1997
- 257
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Application of nitrogen implantation to ULSIMurakami, T. et al. | 1997
- 262
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Shallow junction formation in Si-devices: Damage accumulation and the role of photo-acoustic probes and multi-species implantationCurrent, M.I. et al. | 1997
- 267
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Variable-energy positron beam system and its application to depth-selective defect analysisHirata, K. et al. | 1997
- 271
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ERDA analysis of the depth distribution of deuterium in ion-irradiated nickelMitamura, T. et al. | 1997
- 275
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Effects of ion-implantation with nitrogen ion on microstructures in deformed ironYamamoto, A. et al. | 1997
- 279
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Tribological properties of titanium nitride films prepared by dynamic ion beam mixing methodNagasaka, H. et al. | 1997
- 283
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Characterization of ion implanted TiN filmsOda, K. et al. | 1997
- 288
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An evaluation method for a high concentration profile produced in very low energy doping processesTakase, M. et al. | 1997
- 291
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Characterization and removal of residual defects in high dose, very low energy BF^+~2-implanted (001)SiYang, J. J. / Chen, L. J. et al. | 1997
- 291
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Characterization and removal of residual defects in high dose, very low energy B2+-implanted (001)SiYang, J.J. et al. | 1997
- 295
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Reliability of shallow n+-type layers formed in dual As and B implanted silicon by rapid thermal annealingYokota, K. et al. | 1997
- 299
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Behavior of radiation-induced defects and amorphization in silicon crystalBaba, A. et al. | 1997
- 302
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Photoluminescence characterization of dually Cd+ and N+ ion-implanted GaAsKotani, M. et al. | 1997
- 306
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In-situ ion-beam annealing of damage in GaAs during O implantation and O-site determination by 18O(p,a)15N nuclear reactionNakata, J. et al. | 1997
- 306
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In-situ ion-beam annealing of damage in GaAs during O implantation and O-site determination by ^1^8O(p,)^1^5N nuclear reactionNakata, J. / Yamazaki, H. / Yamamoto, Y. / Kido, Y. et al. | 1997
- 311
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Evaluation of the gate oxide transformed by ion implantationMameno, K. et al. | 1997
- 315
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Si-O bond formation by oxygen implantation into siliconKajiyama, K. et al. | 1997
- 319
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Nitrogen distribution and microstructure of hot implanted Fe-Ti alloy filmsOhtani, S. et al. | 1997
- 323
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Preparation of glass for radiotherapy of cancer by P+ ion implantation at 100 keVKawashita, M. et al. | 1997
- 328
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The effect of B and P ion implantation on superconducting magnetic shielding in NbTi sheetsOgawa, S. et al. | 1997
- 331
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Irradiation effects on the magnetic properties of La~1~.~8~5Sr~0~.~1~5CuO~4 by high-energy heavy ionsFan, X. / Terasawa, M. / Mitamura, T. / Kohara, T. / Ueda, K. / Tsubakino, H. / Yamamoto, A. / Murakami, T. / Matsumoto, S. et al. | 1997
- 331
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Irradiation effects on the magnetic properties of La1.85Sr(sub 0.15)CuO4 by high-energy heavy ionsFan, X. et al. | 1997
- 335
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Ultramicrohardness measurement of ion implanted aluminaIkeyama, M. et al. | 1997
- 340
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High fluence implantation of nitrogen into titanium: Fluence dependence of sputtering yield, retained fluence and nitrogen depth profileMiyagawa, Y. et al. | 1997
- 345
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Shallow junction formation by polyatomic cluster ion implantationTakeuchi, D. et al. | 1997
- 349
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New large area ultraviolet lamp sources and their applicationsBoyd, I.W. et al. | 1997
- 357
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Future trends for large-area pulsed laser depositionGreer, J.A. et al. | 1997
- 363
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Laser induced formation of micro-rough structuresSingh, R.K. et al. | 1997
- 367
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Pulsed laser deposition of silicon films for solar cell applicationsHanabusa, M. et al. | 1997
- 371
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Pulsed laser deposition of electronic ceramicsHorwitz, J.S. et al. | 1997
- 378
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Synthesis and characterization of SiC-Si3N4 composites by dual irradiation of CO2 and excimer lasersYamada, T. et al. | 1997
- 383
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Laser annealing of an amorphous Nd-Fe-B alloyHarada, T. et al. | 1997
- 387
-
Time-of-flight mass spectrometric studies on the plume dynamics of laser ablation of graphiteKokai, F. et al. | 1997
- 392
-
Selection of kinetic energy of laser-ablated particles and its application for deposition of Au, Pt and Ag thin filmsSugihara, T. et al. | 1997
- 396
-
Pulsed laser deposition of tungsten carbide dlin films on silicon (100) substrateSuda, Y. et al. | 1997
- 396
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Pulsed laser deposition of tungsten carbide thin films on silicon (100) substrateSuda, Y. / Nakazono, T. / Ebihara, K. / Baba, K. et al. | 1997
- 400
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Characterization of carbon films produced by laser ablation of graphite in helium and nitrogen gas atmosphereSaito, K. et al. | 1997
- 404
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Pulsed laser deposition of CdWO4Tanaka, K. et al. | 1997
- 408
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Fabrication of PbTiO3 thin films by laser metalorganic chemical vapor depositionTokita, K. et al. | 1997
- 412
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Advanced eclipse pulsed laser deposition method for growth of perovskite crystals and relativesMorita, E. et al. | 1997
- 415
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Controlling the molecular orientation of liquid crystalline polymer Films deposited by polarized-laser chemical vapor depositionItadani, T. et al. | 1997
- 419
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Formation of an ohmic electrode in SiC using a pulsed laser irradiation methodEryu, O. et al. | 1997
- 422
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Bis(ethynylstyryl)benzene films grown by molecular beam deposition in a photon fieldFuchigami, H. et al. | 1997
- 427
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The synthesis of diamond particles by a filament assisted CO2 laser induced CVDGaze, J. et al. | 1997
- 432
-
Residual stress improvement in metal surface by underwater laser irradiationSano, Y. et al. | 1997
- 437
-
Laser purification of metals (I); high Rydberg states of Ni, Ag, and PdIshikawa, T. et al. | 1997
- 442
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Laser purification of metals (II); Purification of Ni and AgMori, H. et al. | 1997
- 446
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Exposure of spacecraft polymers to energetic ions, electrons and ultraviolet lightTahara, H. et al. | 1997
- 450
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Optical and structural characterization of implanted nanocrystalline semiconductorsShimizu-Iwayama, T. et al. | 1997
- 455
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Germanium nanostructures deposited by the cluster-beam evaporation techniqueNozaki, S. et al. | 1997
- 459
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Sputtering of elemental metals by Ar cluster ionsMatsuo, J. et al. | 1997
- 464
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Recent advances of focused ion beam technologyGamo, K. et al. | 1997
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Trapping of hydrogen in silicon-implanted aluminumOgura, M. et al. | 1997
- 474
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Investigation of ion bombarded polymer surfaces using SIMS, XPS and AFMLee, J.W. et al. | 1997
- 480
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Fullerene ion irradiation to siliconTanomura, M. et al. | 1997
- 484
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Reactive sputtering by SF6 cluster ion beamsToyoda, N. et al. | 1997
- 489
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Incident angle dependence of the sputtering effect of Ar-cluster-ion bombardmentKitani, H. et al. | 1997
- 493
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Study of Ar cluster ion bombardment of a sapphire surfaceTakeuchi, D. et al. | 1997
- 498
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STM observation of HOPG surfaces irradiated with Ar cluster ionsSeki, T. et al. | 1997
- 503
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Preparation and catalytic activity of nano-scale Au islands supported on TiO2Takaoka, G.H. et al. | 1997
- 507
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Utilizing of hydrocarbon contamination for prevention of the surface charge-up at electron-beam assisted chemical etching of a diamond chipTaniguchi, J. et al. | 1997
- 510
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Ion beam assisted chemical etching of single crystal diamond chipsKiyohara, S. et al. | 1997
- 514
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The behavior of fcc Cu nanocrystallites in Si(100)Kim, S.-H. et al. | 1997
- 519
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TEM investigation of the stainless steel-aluminum interface created by the surface activated bonding methodYang, L. et al. | 1997
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Preface| 1997
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Sponsors and Session Chairmen| 1997
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Organizers and Committees| 1997