Measurement and Modeling of Distributed-Feedback Lasers with Spatial Hole Burning (English)
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In:
IEEE journal of selected topics in quantum electronics
;
3
, 2
; 547-554
;
1997
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ISSN:
- Article (Journal) / Print
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Title:Measurement and Modeling of Distributed-Feedback Lasers with Spatial Hole Burning
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Contributors:
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Published in:IEEE journal of selected topics in quantum electronics ; 3, 2 ; 547-554
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:1997
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 33.38 / 33.23 / 53.54 / 53.75
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Table of contents – Volume 3, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 127
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Introduction to the Issue on Semiconductor LasersLau, K.Y. et al. | 1997
- 129
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Influences of Unconfined States on the Optical Properties of Quantum-Well StructuresNing, C.-Z. et al. | 1997
- 136
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Carrier Correlation Effects in a Quantum-Well Semiconductor Laser MediumChow, W.W. et al. | 1997
- 142
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Modification of Modal Gain in InGaAs-GaAs Quantum-Well Lasers Due to Barrier-State CarriersFinzi, D. et al. | 1997
- 148
-
Charge Neutrality Violation in Quantum-Dot LasersAsryan, L.V. et al. | 1997
- 158
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Coulomb Enhancement in InGaAs-GaAs Quantum-Well Lasers (Invited Paper)Hsu, C.-F. et al. | 1997
- 166
-
1.3-mm InGaAsP-InP n-Type Modulation-Doped Strained Multiquantum-Well LasersNakahara, K. et al. | 1997
- 173
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Analysis of 6-nm AlGaAs SQW Low-Confinement Laser Structures for Very High-Power OperationBuda, M. et al. | 1997
- 180
-
Strain-Overcompensated GaInP-AlGaInP Quantum-Well Laser Structures for Improved Reliability at High-Output PowersValster, A. et al. | 1997
- 188
-
Lasing Characteristics of Self-Formed Quantum-Dot Lasers with Multistacked Dot LayerShoji, H. et al. | 1997
- 196
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InGaAs-GaAs Quantum-Dot LasersBimberg, D. et al. | 1997
- 206
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Room Temperature Lasing Operation of GaInNAs-GaAs Single-Quantum-Well Laser DiodesKitatani, T. et al. | 1997
- 210
-
Picosecond Pulse Amplification in Tapered-Waveguide Laser-Diode AmplifiersGhafouri-Shiraz, H. et al. | 1997
- 218
-
Time-Development of Transient-Carrier Temperature, Density, and Gain Spectrum in Ultrashort Optical Pulse Excited InGaAs Multiquantum-Well Laser StructureWang, J. et al. | 1997
- 223
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Carrier Capture Times in Quantum-Well, -Wire, and -Box Distributed-Feedback Lasers Characterized by Dynamic Lasing Emission MeasurementsWang, J. et al. | 1997
- 230
-
Monolithic Multisegment Mode-Locked DBR Laser for Wavelength Tunable Picosecond Pulse GenerationZielinski, E. et al. | 1997
- 233
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Picosecond Pulse Amplification in AlGaAs Flared AmplifiersDagens, B. et al. | 1997
- 245
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Generation of High-Energy (0.3 mJ) Short Pulses (<400 ps) from a Gain-Switched Laser Diode Stack with Subnanosecond Electrical Pump PulsesStelmakh, N. et al. | 1997
- 250
-
Frequency Range Extension of Actively Mode-Locked Lasers Integrated with Electroabsorption Modulators Using Chirped GratingsSato, K. et al. | 1997
- 256
-
Superhigh-power Picosecond Optical Pulses from Q-Switched Diode LaserPortnoi, E.L. et al. | 1997
- 261
-
Subharmonic Synchronous Mode-Locking of a Monolithic Semiconductor Laser Operating at Millimeter-Wave FrequenciesNirmalathas, A. et al. | 1997
- 270
-
Dispersive Self-Q-Switching in DFB Lasers--Theory Versus ExperimentBandelow, U. et al. | 1997
- 279
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Large- and Small-Signal Dynamic Behavior of High-Speed Dual-Polarization Quantum-Well Semiconductor LasersNguyen, L.V.T. et al. | 1997
- 290
-
Modeling Noise and Modulation Performance of Fiber Grating External Cavity LasersPremaratne, M. et al. | 1997
- 304
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Noise Equivalent Circuit of a Two-Mode Semiconductor Laser with the Contribution of Both the Linear and the Nonlinear GainBich-Ha, T.T. et al. | 1997
- 309
-
0.98-mm Multiple-Quantum-well Tunneling Injection Laser with 98-GHz Intrinsic Modulation BandwidthZhang, X. et al. | 1997
- 315
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Vertical Carrier Transport in InGaAsP Multiple-Quantum-Well Laser Structures: Effect of p-DopingTessler, N. et al. | 1997
- 320
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The Effect of Carrier-Transport on the Dynamic Performance of Gain-Saturation Wavelength Conversion in MQW Semiconductor Optical AmplifiersAnnetts, P.J. et al. | 1997
- 330
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Barrier Strain Influence on the High-Speed Properties of Compressively Strained InGaAsP Multiquantum-Well Laser. StructuresBouchoule, S. et al. | 1997
- 336
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Very High-Speed Light-Source Module up to 40 Gb-s Containing an MQW Electroabsorption Modulator Integrated with a DFB LaserTakeuchi, H. et al. | 1997
- 344
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Modeling of Oxide-Confined Vertical-Cavity Surface-Emitting LasersBissessur, H.K. et al. | 1997
- 353
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Effects of Optical Feedback on Static and Dynamic Characteristics of Vertical-Cavity Surface-Emitting LasersLaw, J.Y. et al. | 1997
- 359
-
64 oC Continuous-Wave Operation of 1.5-mm Vertical-Cavity LaserMargalit, N.M. et al. | 1997
- 366
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Vertical-Cavity Surface-Emitting Lasers with Low-Ripple Optical Pumping WindowsKnopp, K.J. et al. | 1997
- 372
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Lasing Characteristics of GaAs(311)A Substrate Based InGaAs-GaAs Vertical-Cavity Surface-Emitting LasersTakahashi, M. et al. | 1997
- 379
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Scattering Losses from Dielectric Apertures in Vertical-Cavity LasersHegblom, E.R. et al. | 1997
- 390
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Polarization Related Properties of Vertical-Cavity Surface-Emitting LasersKuksenkov, D.V. et al. | 1997
- 396
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High-Bit-Rate Data Transmission with Short-Wavelength Oxidized VCSEL's: Toward Bias-Free OperationMichalzik, R. et al. | 1997
- 405
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Linewidth Narrowed Vertical-Cavity Surface-Emitting Lasers for Millimeter-Wave Generation by Optical HeterodyningDowd, P. et al. | 1997
- 409
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High-Performance Oxide-Confined GaAs VCSEL'sWeigl, B. et al. | 1997
- 416
-
Vertical-Cavity Lasers with an Intracavity Resonant DetectorLim, S.F. et al. | 1997
- 422
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Multiple-Wavelength Vertical-Cavity Surface-Emitting Laser ArraysYuen, W. et al. | 1997
- 429
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High-Yield Processing and Single-Mode Operation of Passive Antiguide Region Vertical-Cavity LasersWu, Y.A. et al. | 1997
- 435
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GaN-Based Blue-Green Semiconductor LaserNakamura, S. et al. | 1997
- 443
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Reliability Study on 50-100-mW CW Operation of 680-nm Visible Laser Diodes with a Window-Mirror StructureShima, A. et al. | 1997
- 450
-
Optical Gain for Wurtzite GaN with Anisotropic Strain in c PlaneDomen, K. et al. | 1997
- 456
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Realization and Characterization of Optically Pumped GaInN--GaN DFB LasersHofmann, R. et al. | 1997
- 461
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Characterization of Semiconductor Lasers by Spontaneous Emission Measurements (Invited Paper)Girardin, F. et al. | 1997
- 471
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Optical Characterization of InAs Monolayer Quantum Structures Grown on (311)A, (311)B, and (100) GaAs SubstratesXu, S.J. et al. | 1997
- 475
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Effects of Bandgap, Lifetime, and Other Nonuniformities on Diode Laser Thresholds and Slope EfficienciesVurgaftman, I. et al. | 1997
- 485
-
Investigation of Threshold Transition in Semiconductor LasersToffano, Z. et al. | 1997
- 491
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The Differential Efflciency of Quantum-Well LasersSmowton, P.M. et al. | 1997
- 499
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Current Self-Distribution Effect in Diode Lasers: Analytic Criterion and Numerical StudyEliseev, P.G. et al. | 1997
- 507
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Physical Model of OEIC-Compatible Lateral Current Injection LasersSargent, E.H. et al. | 1997
- 513
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Experimental Analysis of Characteristic Temperature in Quantum-Well Semiconductor LasersHigashi, T. et al. | 1997
- 522
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Four-Wave Mixing in Semiconductor Optical Amplifiers: A Practical Tool for Wavelength ConversionD'Ottavi, A. et al. | 1997
- 529
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Polarization-Dependent Optical Nonlinearities of Multiquantum-Well Laser Amplifiers Studied by Four-Wave MixingPaielkl, R. et al. | 1997
- 541
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Analysis, Fabrication, and Charactenzation of Tunable DFB Lasers with Chirped GratingsChen, N. et al. | 1997
- 547
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Measurement and Modeling of Distributed-Feedback Lasers with Spatial Hole BurningFang, W. et al. | 1997
- 555
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Impact of Random Facet Phases on Modal Properties of Partly Gain-Coupled Distributed-Feedback LasersHong, J. et al. | 1997
- 569
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Wavelength Conversion in Distributed-Feedback LasersMinch, J.R. et al. | 1997
- 577
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Wavelength Trimming by External Light Irradiation--Post-Fabrication Lasing Wavelength Adjustment for Multiple-Wavelength Distributed-Feedback Laser ArraysSudoh, T.K. et al. | 1997
- 584
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Multiwavelength DFB Laser Arrays with Integrated Combiner and Optical Amplifier for WDM Optical NetworksZah, C. et al. | 1997
- 598
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A New Tunable Laser Using a Single Electroabsorption Tuning Super Structure Grating for Subnanosecond Switching ApplicationsAlibert, G. et al. | 1997
- 607
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High Reliability of High-Power and Widely Tunable 1.55-mm Distributed Bragg Reflector Lasers for WDM ApplicationsDelorme, F. et al. | 1997
- 615
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Integration of Semiconductor Laser Amplifiers with Sampled Grating Tunable Lasers for WDM ApplicationsLee, S.-L. et al. | 1997
- 628
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Constant Output Power and Low Linewidth in a Simple Wide-Tuning DFB Laser with Multiwavelength GratingTalneau, A. et al. | 1997
- 632
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Effect of Recombination in Separate-Confinement Heterostructure (SCH) Layers on Temperature Characteristics of Semiconductor LasersKurakake, H. et al. | 1997
- 640
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Electro-Opto-Thermal Modeling of Threshold Current Dependence on TemperatureEllis, D.S. et al. | 1997
- 649
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Passive Temperature Compensation of Uncooled GaInAsP-InP Diode Lasers Using Thermal StressCohen, D.A. et al. | 1997
- 659
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1.3-mm Uncooled DFB Lasers with Low Distortion for CATV ApplicationWatanabe, H. et al. | 1997
- 666
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Highly Reliable and Stable-Lateral-Mode Operation of High-Power 0.98-mm InGaAs InGaAsP Lasers with an Exponenoal-Shaped Flared StripeSagawa, M. et al. | 1997
- 672
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InP-Based Reversed-Mesa Ridge-Waveguide Structure for High-Performance Long- Wavelength Laser DiodesAoki, M. et al. | 1997
- 684
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Angle-Etched Facet Laser Arrays (Fan laser Arrays)Francis, D.A. et al. | 1997
- 691
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High Performance and Novel Effects of Micromechanical Tunable Vertical-Cavity LasersVail, E.C. et al. | 1997
- 698
-
Ultrafast WDM LogicVahala, K.J. et al. | 1997
- 702
-
Call for Papers for JSTQE--Ultrafast Optics| 1997
- 703
-
Call for Papers for JSTQE--GaN-Based Lasers: Materials, Processing, and Device Issues.| 1997
- 704
-
Call for Papers for JSTQE--Interdiffused Quantum-Well Materials and Devices| 1997
- 705
-
Electronic Publication-Disk Submission| 1997
- 707
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LEOS CD-ROM Now Available| 1997