Contents of Applied Physics B Volume 65, Number 3, September 1997 (English)
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Applied physics / A
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65
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1997
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- Article (Journal) / Print
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Title:Contents of Applied Physics B Volume 65, Number 3, September 1997
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Published in:Applied physics / A ; 65, 3 ; A5
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Publisher:
- New search for: Springer
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Place of publication:Berlin
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Publication date:1997
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 51.00 / 33.60 / 53.09
- Further information on Basic classification
- New search for: 020/3475/3485
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Keywords:
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Classification:
BKL: 51.00 Werkstoffkunde: Allgemeines / 33.60 Kondensierte Materie: Allgemeines / 53.09 Werkstoffe der Elektrotechnik Local classification TIB: 020/3475/3485 -
Source:
Table of contents – Volume 65, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 221
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Coherent lattice dynamics of highly photo-excited telluriumHunsche, S. / Kurz, H. et al. | 1997
- 231
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Determination of molecular orientation in ultrathin liquid crystal. films on solid substrates using X-ray absorption spectroscopyWegner, H. / Weiss, K. / Grunze, M. / Wöll, C. et al. | 1997
- 235
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Structural and superconducting properties of oxygen-deficient GdBaSrCu3Ox (6.5Hellebrand, B. / Gunasekaran, R.A. / Steger, P.L. / Bäuerle, D. et al. | 1997
- 235
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Structural and superconducting properties of oxygen-deficient GdBaSrCu3Ox (6.5 < x < 7.0)Hellebrand, B. et al. | 1997
- 241
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Nucleation and initial growth of diamond by biased hot filament chemical vapour depositionWang, W.L. / Sánchez, G. / Polo, M.C. / Zhang, R.Q. / Esteve, J. et al. | 1997
- 251
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Characterization of silicon carbide surfaces of 6H-, 15R- and 3C-polytypes by optical second-harmonic generation in comparison with X-ray diffraction techniquesJordan, C. / Schillinger, H. / Dressler, L. / Karmann, S. / Richter, W. / Goetz, K. / Marowsky, G. / Sauerbrey, R. et al. | 1997
- 259
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Excimer-laser ablation and micro-patterning of ceramic Si3N4Heitz, J. / Pedarnig, J.D. / Bäuerle, D. / Petzow, G. et al. | 1997
- 263
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Isothermal depolarisation currents in triglycine sulphate: Polarisation along non-ferroelectric crystallographic axesOsak, W. et al. | 1997
- 265
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Absorption and saturation mechanisms in aluminium laser ablated plasmasAmoruso, S. / Armenante, M. / Berardi, V. / Bruzzese, R. / Spinelli, N. et al. | 1997
- 273
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Dielectric and ferroelectric properties of pulsed-laser deposited BaTiO3 filmsKullmer, R. et al. | 1997
- 281
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Tribological properties of chromium implanted silicon nitride ceramics correlated with microstructureBrenscheidt, F. / Wieser, E. / Matz, W. / Mücklich, A. / Möller, W. et al. | 1997
- 287
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Interfacial microstructure and reaction at the spin-coated fluorinated polyimide/Al interface: surface-enhanced X-ray diffraction and TEM studiesTong, H.Y. / Shi, F.G. / Zhao, B. / Wang, S.-Q. / Brongo, M. / Vasudev, P.K. et al. | 1997
- 291
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Electron mobility of Sr1-xLaxTiO3 ceramics between 600 °C and 1300 °CMoos, R. / Schöllhammer, S. / Härdtl, K.H. et al. | 1997
- 291
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Electron mobility of Sr1 - xLaxTiO3 ceramics between 600 (degree)C and 1300 (degree)CMoos, R. et al. | 1997
- 295
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EXAFS study on ultrafine Ni-Co-B amorphous catalystsShen, B. / Wei, S. / Fang, K. / Deng, J.-F. et al. | 1997
- 301
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Growth and dielectric properties of congruently melting Ba1-xCaxTiO3 crystalsKuper, C. / Pankrath, R. / Hesse, H. et al. | 1997
- 307
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Studies of interface structures of W films grown on patterned and bare Si(100) by TEMAtici, Yusuf et al. | 1997
- 315
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Positron annihilation studies of defects in 3CSiC hot-implanted with nitrogen and aluminum ionsItoh, Hisayoshi / Uedono, Akira / Ohshima, Takeshi / Aoki, Yasushi / Yoshikawa, Masahito / Nashiyama, Isamu / Tanigawa, Shoichiro / Okumura, Hajime / Yoshida, Sadafumi et al. | 1997
- 325
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Carrier freezeout in n-on-p Hg0.7Cd0.3Te photodiode and acceptor level determinationRen, J. / Nimtz, G. / Jakumeit, J. / Wollrab, R. et al. | 1997
- 329
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Band gap states of V and Cr in 6H-silicon carbideAchtziger, N. / Grillenberger, J. / Witthuhn, W. et al. | 1997
- 333
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Temperature dependence of the InP(001) bulk and surface dielectric functionZorn, M. / Trepk, T. / Zettler, J.-T. / Junno, B. / Meyne, C. / Knorr, K. / Wethkamp, T. / Klein, M. / Miller, M. / Richter, W. et al. | 1997
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Contents of Applied Physics B Volume 65, Number 3, September 1997| 1997
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Forthcoming papers| 1997